• Title/Summary/Keyword: Low-spin

검색결과 462건 처리시간 0.027초

희토류금속(III) 착물들의 합성과 전자적 구조와 전기화학적 거동에 관한 연구 (II) (A Study on the Synthesis, Electronic Structure, and Electrochemical Behavior of Rare Earth Metal(III) Complexes (II))

  • 최칠남;김세봉;박면용
    • 대한화학회지
    • /
    • 제37권10호
    • /
    • pp.895-902
    • /
    • 1993
  • 란탄나이드 3가($Pr^{3+}$$Dy^{3+}$)와 유기 리간드를 (phen', terpy') 착물들의 거동을 UV/vis 분광분석, 자기화 그리고 전기화학적 방법에 의해 조사하였다. 착물들의 결정장 갈라짐 에너지 크기와 짝지움에너지 그리고 스핀상태는 착물들의 스펙트라로부터 얻었다. 이들 착물들에 대한 전지화학적 거동은 비수용매속에서 순환 전압전류법에 의해 관찰하였다. 이들 환원피크는 전자 전이에 의한 비가역적인 2단계의 환원 과정이었다.

  • PDF

Structural and Magnetic Properties of LaFeO3-BaTiO3 Solid Solutions

  • Ramana, E.Venkata;Kwon, O-Ung;Kim, Jin-I;Jung, C.U.
    • Journal of Magnetics
    • /
    • 제14권3호
    • /
    • pp.117-119
    • /
    • 2009
  • Polycrystalline samples of LaFe$O_3$-BaTi$O_3$ were synthesized to examine the structural and magnetic behavior. X-ray diffraction confirmed that the ceramics had tetragonal symmetry with less tetragonal strain (c/a) than BaTi$O_3$. The magnetic hysteresis measured at room temperature suggested that the magnetic nature deviates from that of the parent LaFe$O_3$, which has antiferromagentic with a G-type spin structure. Improved magnetic behavior of the solid solution compound might be due to the increase in the canting angle of the spin. The presence of oxygen vacancies and fluctuating Fe valence, arising from the substitution of $Ba^{2+}$ and $Ti^{4+}$ at the A- and B-sites of the lattice, might contribute to bulk magnetization. The temperature dependent magnetization indicated that magnetization was higher at low temperatures and showed a decreasing trend with increasing temperature to room temperature. The magnetic transition temperature of these samples was 665 K and 743 K for the mixed system and LaFe$O_3$, respectively.

Effect of NiO spin switching on the Fe film magnetic anisotropy in epitaxially grown Fe/NiO/Ag(001) and Fe/NiO/MgO(001) systems

  • 김원동;박주상;황찬용
    • 한국진공학회:학술대회논문집
    • /
    • 한국진공학회 2009년도 제38회 동계학술대회 초록집
    • /
    • pp.366-366
    • /
    • 2010
  • Single crystalline Fe/NiO bilayers were epitaxially grown on Ag(001) and on MgO(001), and investigated by Low Energy Electron Diffraction (LEED), Magneto-Optic Kerr Effect (MOKE), and X-ray Magnetic Linear Dichorism (XMLD). We find that while the Fe film has an in-plane magnetization in both Fe/NiO/Ag(001) and Fe/NiO/MgO(001) systems, the NiO spins switch from out-of-plane direction in Fe/NiO/MgO(001) to in-plane direction in Fe/NiO/Ag(001). These two different NiO spin orientations generate remarkable different effects that the NiO induced magnetic anisotropy in the Fe film is much greater in Fe/NiO/Ag(001) than in Fe/NiO/MgO(001). XMLD measurement shows that the much greater magnetic anisotropy in Fe/NiO/Ag(001) is due to a 90o-coupling between the in-plane NiO spins and the in-plane Fe spins which causes a switching of the NiO spins during the Fe magnetization reversal.

  • PDF

Low Temperature Annealing Effect of PFO-Poss Emission Layer on the Properties of Polymer Light Emitting Diodes

  • Gong, Su-Cheol;Chang, Ho-Jung
    • 한국재료학회지
    • /
    • 제19권6호
    • /
    • pp.313-318
    • /
    • 2009
  • Polymer Light Emitting Diodes (PLEDs) with an ITO/PEDOT:PSS/PVK/PFO-poss/LiF/Al structure were prepared on plasma-treated ITO/glass substrates using spin-coating and thermal evaporation methods. The annealing effects of the PFO-poss film when it acts as the emission layer were investigated by using electrical and optical property measurements. The annealing conditions of the PFO-poss emission film were 100 and $200^{\circ}C$ for 1, 2 and 3 hours, respectively. The luminance increased and the turn-on voltage decreased when the annealing temperature and treatment time increased. After examining the Luminance-Voltage (L-V) properties of the PLED, the maximum luminance was found to be 1497 cd/$m^2$ at 11 V for the device when it was annealed at $200^{\circ}C$ for 3 hours. The peak intensity of the PLED emission spectra at approximately 525 nm in wavelength increased when the annealing temperature and time of the PFO-poss film increased. These results suggest that the light emission color shifted from blue to green.

산화그래핀(GO)의 플라스틱(PS) 표면 코팅방법에 대한 연구 (Investigation on the polystyrene surface coating method of graphene oxide)

  • 박재범;이지훈;허증수;박단비;임정옥
    • 한국표면공학회지
    • /
    • 제54권2호
    • /
    • pp.77-83
    • /
    • 2021
  • In this study, we investigated various coating methods of graphene oxide on the surface of a petri dish made of polystyrene and analyzed the physical and chemical properties of the coated surface. For coating, spinning, spraying and pressing methods were attempted. The coated surface was characterized by SEM, Raman Spectroscopy, AFM, FT-IR, UV-Vis Spectroscopy and Contact Angle measurement. By spin coating and spray coating, well distributed graphene oxide in the form of multiple islands on the plastic surface with an average size of 5 to 20㎛ are observed by SEM, and high binding energy between graphene oxide and plastic surface is measured by AFM. In case of hand press coating, graphene oxide of 10㎛ or more was observed, and low surface energy was measured. By FT-IR and Raman Spectroscopy analysis, surface coating of graphene oxide was confirmed.

유기-무기 하이브리드 압전 나노복합체 기반의 플렉서블 에너지 하베스터 제작 및 발전성능 평가 (Flexible Energy Harvester Made of Organic-Inorganic Hybrid Piezoelectric Nanocomposite)

  • 권유정;현동열;박귀일
    • 한국재료학회지
    • /
    • 제29권6호
    • /
    • pp.371-377
    • /
    • 2019
  • A flexible piezoelectric energy harvester(f-PEH) that converts tiny mechanical and vibrational energy resources into electric signals without any restraints is drawing attention as a self-powered source to operate flexible electronic systems. In particular, the nanocomposites-based f-PEHs fabricated by a simple and low-cost spin-coating method show a mechanically stable and high output performance compared to only piezoelectric polymers or perovskite thin films. Here, the non-piezoelectric polymer matrix of the nanocomposite-based f-PEH is replaced by a P(VDF-TrFE) piezoelectric polymer to improve the output performance generated from the f-PEH. The piezoelectric hybrid nanocomposite is produced by distributing the perovskite PZT nanoparticles inside the piezoelectric elastomer; subsequently, the piezoelectric hybrid material is spin-coated onto a thin metal substrate to achieve a nanocomposite-based f-PEH. A fabricated energy device after a two-step poling process shows a maximum output voltage of 9.4 V and a current of 160 nA under repeated mechanical bending. Finite element analysis(FEA) simulation results support the experimental results.

Low field NMR을 이용한 참깨의 원산지 판별 (Discriminating the Geographical Origin of Sesame Seeds by Low Field NMR)

  • 노정혜;이선민
    • 한국식품과학회지
    • /
    • 제34권6호
    • /
    • pp.1062-1066
    • /
    • 2002
  • 참깨의 원산지를 판별하기 위하여 일반성분 및 low field NMR을 이용하여 relaxation time을 측정하였다. 일반성분으로는 한국산, 중국산 및 수단산간의 유의적인 차이는 없었으나 NMR 데이터 중 CPMG를 제외한 나머지 측정항목인 $T_1-IR,\;T_1-SR,\;T_2-SE,\;SFC$는 원산지별 유의적인 차이를 보였다. 가장 유의적인 차이가 높았던 SFC, IR, SR을 이용하여 정준 판별분석을 시행한 결과 수단산은 100% 판별이 가능하였고, 한국산 및 중국산은 각각 80%, 90%의 정확성을 나타내었으며, 5가지 NMR 측정항목을 모두 사용하여 판별한 결과 한국산, 중국산, 수단산이 각각 95%, 90%, 100%의 원산지 판별이 가능하였다.

Flexibility Improvement of InGaZnO Thin Film Transistors Using Organic/inorganic Hybrid Gate Dielectrics

  • Hwang, B.U.;Kim, D.I.;Jeon, H.S.;Lee, H.J.;Lee, N.E.
    • 한국진공학회:학술대회논문집
    • /
    • 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
    • /
    • pp.341-341
    • /
    • 2012
  • Recently, oxide semi-conductor materials have been investigated as promising candidates replacing a-Si:H and poly-Si semiconductor because they have some advantages of a room-temperature process, low-cost, high performance and various applications in flexible and transparent electronics. Particularly, amorphous indium-gallium-zinc-oxide (a-IGZO) is an interesting semiconductor material for use in flexible thin film transistor (TFT) fabrication due to the high carrier mobility and low deposition temperatures. In this work, we demonstrated improvement of flexibility in IGZO TFTs, which were fabricated on polyimide (PI) substrate. At first, a thin poly-4vinyl phenol (PVP) layer was spin coated on PI substrate for making a smooth surface up to 0.3 nm, which was required to form high quality active layer. Then, Ni gate electrode of 100 nm was deposited on the bare PVP layer by e-beam evaporator using a shadow mask. The PVP and $Al_2O_3$ layers with different thicknesses were used for organic/inorganic multi gate dielectric, which were formed by spin coater and atomic layer deposition (ALD), respectively, at $200^{\circ}C$. 70 nm IGZO semiconductor layer and 70 nm Al source/drain electrodes were respectively deposited by RF magnetron sputter and thermal evaporator using shadow masks. Then, IGZO layer was annealed on a hotplate at $200^{\circ}C$ for 1 hour. Standard electrical characteristics of transistors were measured by a semiconductor parameter analyzer at room temperature in the dark and performance of devices then was also evaluated under static and dynamic mechanical deformation. The IGZO TFTs incorporating hybrid gate dielectrics showed a high flexibility compared to the device with single structural gate dielectrics. The effects of mechanical deformation on the TFT characteristics will be discussed in detail.

  • PDF

Shear-coating을 사용한 은 나노와이어 투명 전극 제조 및 특성 분석 (Preparation and characterization of silver nanowire transparent electrodes using shear-coating)

  • 조경수;홍기하;박준식;정중희
    • 한국표면공학회지
    • /
    • 제53권4호
    • /
    • pp.182-189
    • /
    • 2020
  • Indium tin oxide (ITO) used a transparent electrode of a photoelectric device has a low sheet resistance and a high transmittance. However, ITO is disadvantageous in that the process cost is expensive, and the process time is long. Silver nanowires (AgNWs) transparent electrodes are based on a low cost solution process. In addition, it has attracted attention as a next-generation transparent electrode material that replaces ITO because it has similar electrical and optical characteristic to ITO, it is noted as a. AgNW thin films are mainly produced by spin-coating. However, the spin-coating process has a disadvantage of high material loss. In this study, the material loss was reduced by using about 2~10 ㎕ of AgNW solution on a (25 × 25) ㎟ substrate using the shear-coating method. It was also possible to align AgNWs in the drag direction by dragging the meniscus of the solution. The electro-optical properties of the AgNW thin film were adjusted by changing the experimental parameters that the amount of AgNWs suspension, the gap between the substrate and the blade, and the coating speed. As a result, AgNW thin films with a transmittance of 90.7 % at a wavelength of 550 nm and a sheet resistance of 15 Ω/□ was deposited and exhibited similar properties to similar AgNW transparent electrodes studied by other researchers.

Charge Structure of the Combined System (La0.6Sr0.4MnO3)0.7(La0.6Sr0.4FeO3)0.3 as Investigated by Mössbauer Spectroscopy

  • Uhm, Young Rang;Kim, Sam Jin;Kim, Chul Sung
    • Journal of Magnetics
    • /
    • 제7권1호
    • /
    • pp.18-20
    • /
    • 2002
  • The charge structures of (LSMO) and of the combined system $(La_{ 0.6}Sr_{0.4}FeO_3$(LSMO) and of the combined system (La_{0.6}Sr_{0.4}MnO_3)_{0.7}(La_{0.6}Sr_{0.4}/FeO_3)_{0.3}$are investigated by using M$\ddot{o}$ssbauer spectroscopy. The antiferromagnetically ordered $(La_{0.6}Sr_{0.4}FeO_3$(LSFO) has possible charges of Fe^{3+} and Fe^{4+}$, which include a low-spin $Fe^{4+}$ state at and above 230 K. The temperature dependences of the M$\ddot{o}$ssbauer spectra for the $(La_{ 0.6}Sr_{0.4}FeO_3$ system and for the combined $(LSMO)_{ 0.7}(LSFO)_{0.3}$ system are fitted as three sets of Zeeman patterns corresponding to $Fe^{3+}$ and $Fe^{4+} below 230 K. At and above 230 K, the fitted M$\ddot{o}$ssbauer spectra for the combined system are the same in all temperature ranges. Above 230 K, $(La_{0.6}Sr_{0.4}FeO_3$ spectrum consists of two sets of six Lorentzians for $Fe^{3+}$ and one line for low spin $Fe^{4+}$. It is worth noting that large fields are induced in the combined system.