• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.174-174
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• 2010

Gallium Nitride(GaN) attracts great attention due to their wide band gap energy (3.4eV), high thermal stability to the solid state lighting devices like LED, Laser diode, UV photo detector, spintronic devices, solar cells, sensors etc. Recently, researchers are interested in synthesis of polycrystalline and amorphous GaN which has also attracted towards optoelectronic device applications significantly. One of the alternatives to deposit GaN at low temperature is to use Single Source Molecular Percursor (SSP) which provides preformed Ga-N bonding. Moreover, our group succeeds in hybridization of SSP synthesized GaN with Single wall carbon nanotube which could be applicable in field emitting devices, hybrid LEDs and sensors. In this work, the GaN thin films were deposited on c-axis oriented sapphire substrate by MBE (Molecular Beam Epitaxy) using novel single source precursor of dimethyl gallium azido-tert-butylamine($Me_2Ga(N_3)NH_2C(CH_3)_3$) with additional source of ammonia. The surface morphology, structural and optical properties of GaN thin films were analyzed for the deposition in the temperature range of $600^{\circ}C$ to $750^{\circ}C$. Electrical properties of deposited thin films were carried out by four point probe technique and home made Hall effect measurement. The effect of ammonia on the crystallinity, microstructure and optical properties of as-deposited thin films are discussed briefly. The crystalline quality of GaN thin film was improved with substrate temperature as indicated by XRD rocking curve measurement. Photoluminescence measurement shows broad emission around 350nm-650nm which could be related to impurities or defects.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.255-255
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• 2010

Recently, nonvolatile memories (NVM) of various types have been researched to improve the electrical performance such as program/erase voltages, speed and retention times. Also, the charge trap memory is a strong candidate to realize the ultra dense 20-nm scale NVM. Furthermore, the high charge efficiency and the thermal stability of SiC nanocrystals NVM with single $SiO_2$ tunnel barrier have been reported. [1-2] In this study, the SiC charge trap NVM was fabricated and electrical properties were characterized. The 100-nm thick Poly-Si layer was deposited to confined source/drain region by using low-pressure chemical vapor deposition (LP-CVD). After etching and lithography process for fabricate the gate region, the $Si_3N_4/SiO_2/Si_3N_4$ (NON) and $SiO_2/Si_3N_4/SiO_2$ (ONO) barrier engineered tunnel layer were deposited by using LP-CVD. The equivalent oxide thickness of NON and ONO tunnel layer are 5.2 nm and 5.6 nm, respectively. By using ultra-high vacuum magnetron sputtering with base pressure 3x10-10 Torr, the 2-nm SiC and 20-nm $SiO_2$ were successively deposited on ONO and NON tunnel layers. Finally, after deposited 200-nm thick Al layer, the source, drain and gate areas were defined by using reactive-ion etching and photolithography. The lengths of squire gate are $2\;{\mu}m$, $5\;{\mu}m$ and $10\;{\mu}m$. The electrical properties of devices were measured by using a HP 4156A precision semiconductor parameter analyzer, E4980A LCR capacitor meter and an Agilent 81104A pulse pattern generator system. The electrical characteristics such as the memory effect, program/erase speeds, operation voltages, and retention time of SiC charge trap memory device with barrier engineered tunnel layer will be discussed.

• Korean Journal of Agricultural Science
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• v.46 no.2
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• pp.239-256
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• 2019

The quality of tomatoes drastically changes according to storage conditions, such as temperature, humidity, and air composition. High storage temperatures result in the degradation of the firmness and color of tomatoes and in decay by bacteria, whereas chilling injury and softening can be caused by storage at low temperatures. The gas composition in the storage and packaging are other parameters that influence the quality and shelf life of tomatoes by preventing excessive transpiration and respiration. In addition, tomato quality is dependent on the degree of maturity and harvest season. Because there are many quality parameters, it is necessary to systemically establish an optimal standard, and this approach requires collecting and reviewing various data on storage conditions. The aim of this review was to provide basic information by comparing and analyzing studies on the changes in tomato quality (firmness, color, lycopene content, and acidity of tomatoes) during storage and to describe a few models that can assess the quality parameters. Many studies have provided results from experiments on the effects of postharvest control (e.g., storage temperature, packaging film, and gas treatment, as reviewed above) on tomato quality including firmness, soluble solids content, and lycopene content. However, it is still necessary to conduct an overall analysis of the published conditions and to determine the best method for preserving the quality of tomatoes as well as other fruits.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.34 no.2
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• pp.110-114
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• 2021

In this study, we fabricated light-weight solar module for various applications such as building integrated photovoltaics (BIPV), vehicles, trains, etc. Ethylene tetra fluoro ethylene (ETFE) film was applied as a material to replace the cover glass, which occupies more than 65% of the weight of the PV module. Glass fiber reinforced plastic (GRP) was applied to the ones with a low durability by replacing the cover glass to ETFE. Moreover, to achieve a high solar power conversion in this study, we applied a shingled design to weight reduced solar modules. The shingled module with GRP shows 183.7 W of solar-to-power conversion, and the output reduction rate after weight load test was 1.14%.

• Food Science of Animal Resources
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• v.44 no.2
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• pp.372-389
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• 2024

This study investigated the efficacy of ultraviolet-C (UV-C) irradiation in enhancing the quality of raw bovine milk by targeting microbial populations and lipid peroxidation, both of which are key factors in milk spoilage. We categorized the raw milk samples into three groups based on initial bacterial load: low (<3 Log 10 CFU/mL), medium (3-4 Log 10 CFU/mL), and high (>4 Log 10 CFU/mL). Using a 144 W thin-film UV-C reactor, we treated the milk with a flow rate of 3 L/min. We measured the bacterial count including standard plate count, coliform count, coagulase-negative staphylococci count, and lactic acid bacteria count and lipid peroxidation (via thiobarbituric acid reactive substances assay) pre- and post-treatment. Our results show that UV-C treatment significantly reduced bacterial counts, with the most notable reductions observed in high and medium initial load samples (>4 and 3-4 Log 10 CFU/mL, respectively). The treatment was particularly effective against coliforms, showing higher reduction efficiency compared to coagulase-negative staphylococci and lactic acid bacteria. Notably, lipid peroxidation in UV-C treated milk was significantly lower than in pasteurized or untreated milk, even after 72 hours. These findings demonstrate the potential of UV-C irradiation as a pre-treatment method for raw milk, offering substantial reduction in microbial content and prevention of lipid peroxidation, thereby enhancing milk quality.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.64.1-64.1
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• 2010

The morphology of mesoporous $TiO_2$ films plays an important role in the operation of a DSSC. For example, the energy conversion efficiency of DSSCs with well-organized mesoporous $TiO_2$ films is much higher than those with traditional films possessing a random morphology. In previous research, well-organized mesoporous $TiO_2$ films have mainly been synthesized using an amphiphilic block copolymer, e.g., a poly(ethylene oxide) (PEO)-based template. A graft copolymer is more attractive than a block copolymer due to its low cost and the ease with which it can be synthesized. In this work, we provide the first report on the successful synthesis of well-organized mesoporous $TiO_2$ films templated by an organized graft copolymer as a structure directing agent. Well-organized mesoporous $TiO_2$ films with excellent channel connectivities were developed via the sol gel processusing an organized PVC-g-POEM graft copolymer synthesized by one-pot ATRP. The careful adjustment of copolymer composition and solvent affinity using a THF/$H_2O$/HCl mixture was used to systematically vary the material structure. The influence of the material structure on solar cell performance was then investigated. A solid-state DSSC employing both the graft copolymer templated organized 700 nm-thick $TiO_2$ films and graft copolymer electrolytes exhibited a solar conversion efficiency of 2.2% at 100 $mW/cm^2$. This value was approximately two-fold higher than that attained from a DSSC employing a random mesoporous $TiO_2$ film. The solar cell performance was maximized at 4.6% when the film thickness was increased to $2.5{\mu}m$. We believe that this graft copolymer-directed approach introduces a new and simple route toward the synthesis of well-organized metal oxide films as an alternative to a conventional block copolymer-based template.

• Journal of Mechanical Science and Technology
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• v.18 no.9
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• pp.1680-1688
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• 2004

The information indicating device plays an important part in the information times. Recently, the classical CRT (Cathod Ray Tube) display is getting transferred to the LCD (Liquid Crystal Display) one which is a kind of the FPDs (Flat Panel Displays). The OLED (Organic Light Emitting Diodes) display of the FPDs has many advantages for the low power consumption, the luminescence in itself, the light weight, the thin thickness, the wide view angle, the fast response and so on as compared with the LCD one. The OLED has lately attracted considerable attention as the next generation device for the information indicators. And also it has already been applied for the outside panel of a mobile phone, and its demand will be gradually increased in the various fields. It is manufactured by the vapor deposition method in the vacuum state, and the uniformity of thin film on the substrate depends on the temperature distribution in the point-cell source. This paper describes the basic concepts that are obtained to design the point-cell source using the computational temperature analysis. The grids are generated using the module of AUTOHEXA in the ICEM CFD program and the temperature distributions are numerically obtained using the STAR-CD program. The temperature profiles are calculated for four cases, i.e., the charge rate for the source in the crucible, the ratio of diameter to height of the crucible, the ratio of interval to height of the heating bands, and the geometry modification for the basic crucible. As a result, the blowout phenomenon can be shown when the charge rate for the source increases. The temperature variation in the radial direction is decreased as the ratio of diameter to height is decreased and it is suggested that the thin film thickness can be uniformed. In case of using one heating band, the blowout can be shown as the higher temperature distribution in the center part of the source, and the clogging can appear in the top end of the crucible in the lower temperature. The phenomena of both the blowout and the clogging in the modified crucible with the nozzle-diffuser can be prevented because the temperature in the upper part of the crucible is higher than that of other parts and the temperature variation in the radial direction becomes small.

• The Korean Journal of Rheology
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• v.10 no.4
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• pp.202-216
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• 1998

Improved version of previous 'Orthotropic' closure approximation, termed 'ORW' has been numerically developed using new homogeneous flow data. Previous 'Orthotropic' closure approximation, i.e., ORF or ORL showed non-physical oscillation for interaction coefficient $C_1$<0.001 at simple shear flow. It also shows non-physcial oscillation and under-prediction compared with 'Distribution Function Calculation' at non-homogeneous flow of center-gated disk. These phenomena are mainly due to the flow data of 'Distribution Function Calculation' which were used for least-square optimization. ORW obtained by fitting flow data of low interaction coefficient does not show non-physical oscillation and results in reasonably good behaviors at non-homogeneous flows as well as homogeneous flows. Fitting function forms have not been found to improve overall behaviors. It has been found that considering all the eigenvalues of orientation tensor (including the third eigenvalues) might end up with a better closure approximation than just considering the first and second eigenvalues. It is, however, very important and yet difficult to select appropriate function forms of eigenvalues. Numerical simulation including coupling and in-plane velocity gradient effects were performed for injection mold filing process with a film-gated strip and a center-gated disk using ORW and various other closure approximations for comparisons. Although ORW is in excellent agreement with 'Distribution Function Calculation', the predicted results seem to have consistent error in comparison with experimental data. The diffusivity term with constant interaction coefficient might have to be further investigated in order to accurately describe orientation states.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.181.2-181.2
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• 2014

A single-layer graphene has been uniformly grown on a Cu surface at elevated temperatures by thermally processing a poly (methyl methacrylate) (PMMA) film in a rapid thermal annealing (RTA) system under vacuum. The detailed chemistry of the transition from solid-state carbon to graphene on the catalytic Cu surface was investigated by performing in-situ residual gas analysis while PMMA/Cu-foil samples being heated, in conjunction with interrupted growth studies to reconstruct ex-situ the heating process. We found that the gas species of mass/charge (m/e) ratio of 15 ($CH_3{^+}$) was mainly originated from the thermal decomposition of PMMA, indicating that the formation of graphene occurs with hydrocarbon molecules vaporized from PMMA, such as methane and/or methyl radicals, as precursors rather than by the direct graphitization of solid-state carbon. We also found that the temperature for dominantly vaporizing hydrocarbon molecules from PMMA and the length of time, the gaseous hydrocarbon atmosphere is maintained, are dependent on both the heating temperature profile and the amount of a solid carbon feedstock. From those results, we strongly suggest that the heating rate and the amount of solid carbon are the dominant factors to determine the crystalline quality of the resulting graphene film. Under optimal growth conditions, the PMMA-derived graphene was found to have a carrier (hole) mobility as high as ${\sim}2,700cm^2V^{-1}s^{-1}$ at room temperature, which is superior to common graphene converted from solid carbon.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.236-236
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• 2008

(Bi,La)$Ti_3O_{12}$(BLT) thin film is one of the most attractive materials for ferroelectric random access memory (FRAM) applications due to its some excellent properties such as high fatigue endurance, low processing temperature, and large remanent polarization [1-2]. The authors firstly investigated and reported the damascene process of chemical mechanical polishing (CMP) for BLT thin film capacitor on behalf of plasma etching process for fabrication of FRAM [3]. CMP process could prepare the BLT capacitors with the superior process efficiency to the plasma etching process without the well-known problems such as plasma damages and sloped sidewall, which was enough to apply to the fabrication of FRAM [2]. BLT-CMP characteristics showed the typical oxide-CMP characteristics which were related in both pressure and velocity according to Preston's equation and Hernandez's power law [2-4]. Good surface roughness was also obtained for the densification of multilevel memory structure by CMP process [3]. The well prepared BLT capacitors fabricated by CMP process should have the sufficient ferroelectric properties for FRAM; therefore, in this study the electrical properties of the BLT capacitor fabricated by CMP process were analyzed with the process parameters. Especially, the effects of CMP pressure, which had mainly affected the removal rate of BLT thin films [2], on the electrical properties were investigated. In order to check the influences of the pressure in eMP process on the ferroelectric properties of BLT thin films, the electrical test of the BLT capacitors was performed. The polarization-voltage (P-V) characteristics show a decreased the remanent polarization (Pr) value when CMP process was performed with the high pressure. The shape of the hysteresis loop is close to typical loop of BLT thin films in case of the specimen after CMP process with the pressures of 4.9 kPa; however, the shape of the hysteresis loop is not saturated due to high leakage current caused by structural and/or chemical damages in case of the specimen after CMP process with the pressures of 29.4 kPa. The leakage current density obtained with positive bias is one order lower than that with negative bias in case of 29.4 kPa, which was one or two order higher than in case of 4.9 kPa. The high pressure condition was not suitable for the damascene process of BLT thin films due to the defects in electrical properties although the better efficiency of process. by higher removal rate of BLT thin films was obtained with the high pressure of 29.4 kPa in the previous study [2].