• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.11a
• /
• pp.418-418
• /
• 2008

The electrochemical etching of silicon in HF-based solutions is known to form various types of porous structures. Porous structures are generally classified into three categories according to pore sizes: micropore (below 2 nm in size), mesopore (2 ~ 50 nm), and macropore (above 50 nm). Recently, the formation of macropores has attracted increasing interest because of their promising characteristics for an wide scope of applications such as microelectromechanical systems (MEMS), chemical sensors, biotechnology, photonic crystals, and photovoltaic application. One of the promising applications of macropores is in the field of MEMS. Anisotropic etching is essential step for fabrication of MEMS. Conventional wet etching has advantages such as low processing cost and high throughput, but it is unsuitable to fabricate high-aspect-ratio structures with vertical sidewalls due to its inherent etching characteristics along certain crystal orientations. Reactive ion dry etching is another technique of anisotropic etching. This has excellent ability to fabricate high-aspect-ratio structures with vertical sidewalls and high accuracy. However, its high processing cost is one of the bottlenecks for widely successful commercialization of MEMS. In contrast, by using electrochemical etching method together with pre-patterning by lithographic step, regular macropore arrays with very high-aspect-ratio up to 250 can be obtained. The formed macropores have very smooth surface and side, unlike deep reactive ion etching where surfaces are damaged and wavy. Especially, to make vertical microwire or nanowire arrays (aspect ratio = over 1:100) on silicon wafer with top-down photolithography, it is very difficult to fabricate them with conventional dry etching. The electrochemical etching is the most proper candidate to do it. The pillar structures are demonstrated for n-type silicon and the formation mechanism is well explained, while such a experimental results are few for p-type silicon. In this report, In order to understand the roles played by the kinds of etching solution and mask patterns in the formation of microwire arrays, we have undertaken a systematic study of the solvent effects in mixtures of HF, dimethyl sulfoxide (DMSO), iso-propanol, and mixtures of HF with water on the structure formation on monocrystalline p-type silicon with a resistivity with 10 ~ 20 $\Omega{\cdot}cm$. The different morphological results are presented according to mask patterns and etching solutions.

• The Journal of the Korean dental association
• /
• v.58 no.7
• /
• pp.435-442
• /
• 2020

Porcelain is the first ceramic material to be introduced into dentistry. Porcelain jacket crown was introduced by Dr. Charles H Land in 1886, which was an excellent aesthetic dental restoration but has not been widely used due to high firing shrinkage and low tensile strength. Then metal-ceramic system, which combines the esthetic properties of ceramics and the mechanical properties of metals, was introduced and nowadays it is still used in dental clinical field. However, the metal-ceramic system has shown some problems, such as increased lightness by reflection of light at opaque layer, shadow beneath the gingival line due to the block-out of light by metal coping, exposure of metal in margin part, bond failure between metal and porcelain, oxidation of metal coping during firing the porcelain, etc. Recently, along with the advance of fabrication methods of dental ceramics, the all-ceramic restorations with high esthetic and mechanical properties has increased and gradually replaced metal-ceramic restorations. Especially, CAD/CAM technology has opened a new era in fabricating the dental ceramic restorations. This overview will take a look at the past, present and future possibility of the dental ceramic materials.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.363-363
• /
• 2014

Ruthenium (Ru) has attractive material properties due to its promising characteristics such as a low resistivity ($7.1{\mu}{\Omega}{\cdot}cm$ in the bulk), a high work function of 4.7 eV, and feasibility for the dry etch process. These properties make Ru films appropriate for various applications in the state-of-art semiconductor device technologies. Thus, it has been widely investigated as an electrode for capacitor in the dynamic random access memory (DRAM), a metal gate for metal-oxide semiconductor field effect transistor (MOSFET), and a seed layer for Cu metallization. Due to the continuous shrinkage of microelectronic devices, better deposition processes for Ru thin films are critically required with excellent step coverages in high aspect ratio (AR) structures. In these respects, atomic layer deposition (ALD) is a viable solution for preparing Ru thin films because it enables atomic-scale control of the film thickness with excellent conformality. A recent investigation reported that the nucleation of ALD-Ru film was enhanced considerably by using a zero-valent metallorganic precursor, compared to the utilization of precursors with higher metal valences. In this study, we will present our research results on the synthesis and characterization of novel ruthenium complexes. The ruthenium compounds were easy synthesized by the reaction of ruthenium halide with appropriate organic ligands in protic solvent, and characterized by NMR, elemental analysis and thermogravimetric analysis. The molecular structures of the complexes were studied by single crystal diffraction. ALD of Ru film was demonstrated using the new Ru metallorganic precursor and O2 as the Ru source and reactant, respectively, at the deposition temperatures of $300-350^{\circ}C$. Self-limited reaction behavior was observed as increasing Ru precursor and O2 pulse time, suggesting that newly developed Ru precursor is applicable for ALD process. Detailed discussions on the chemical and structural properties of Ru thin films as well as its growth behavior using new Ru precursor will be also presented.

• Korean Journal of Materials Research
• /
• v.13 no.8
• /
• pp.497-502
• /
• 2003

Crystallographic characteristics and interfacial structures of $Al_2$$O_3$and $ZrO_2$dielectric films prepared by atomic layer chemical vapor deposition (ALCVD) were investigated at atomic scale by high-resolution transmission electron microscopy (HRTEM) and energy dispersive X-ray spectroscopy (EDS)/electron energy-loss spectroscopy (EELS) coupled with a field-emission transmission electron microscope. The results obtained from cross-sectional and plan-view specimens showed that the $Al_2$$O_3$film was crystallized by annealing at a high temperature and its crystal system might be evaluated as either cubic or tetragonal phase. Whereas the $ZrO_2$film crystallized during deposition at a low temperature of ∼$300^{\circ}C$ was composed of both tetragonal and monoclinic phase. The interfacial thickness in both films was increased with the increased annealing temperature. Further, the interfacial structures of X$ZrO_2$$O_3$and $ZrO_2$films were discussed through analyses of EDS elemental maps and EELS spectra obtained from the annealed films, respectively.

• The Korean Journal of Nuclear Medicine
• /
• v.32 no.4
• /
• pp.365-373
• /
• 1998

Purpose: The conventional gamma camera is not ideal for scintimammography because of its large detector size (${\sim}500mm$ in width) causing high cost and low image quality. We are developing a small gamma camera dedicated for breast imaging. Materials and Methods: The small gamma camera system consists of a NaI (T1) crystal ($60 mm{\times}60 mm{\times}6 mm$) coupled with a Hamamatsu R3941 Position Sensitive Photomultiplier Tube (PSPMT), a resister chain circuit, preamplifiers, nuclear instrument modules, an analog to digital converter and a personal computer for control and display. The PSPMT was read out using a standard resistive charge division which multiplexes the 34 cross wire anode channels into 4 signals ($X^+,\;X^-,\;Y^+,\;Y^-$). Those signals were individually amplified by four preamplifiers and then, shaped and amplified by amplifiers. The signals were discriminated ana digitized via triggering signal and used to localize the position of an event by applying the Anger logic. Results: The intrinsic sensitivity of the system was approximately 8,000 counts/sec/${\mu}Ci$. High quality flood and hole mask images were obtained. Breast phantom containing $2{\sim}7 mm$ diameter spheres was successfully imaged with a parallel hole collimator The image displayed accurate size and activity distribution over the imaging field of view Conclusion: We have succesfully developed a small gamma camera using NaI(T1)-PSPMT and nuclear Instrument modules. The small gamma camera developed in this study might improve the diagnostic accuracy of scintimammography by optimally imaging the breast.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.292-292
• /
• 2016

Transition metal dichalcogenides (TMDs) with a two-dimensional layered structure have been considered highly promising materials for next-generation flexible, wearable, stretchable and transparent devices due to their unique physical, electrical and optical properties. Recent studies on TMD devices have focused on developing a suitable doping technique because precise control of the threshold voltage ($V_{TH}$) and the number of tightly-bound trions are required to achieve high performance electronic and optoelectronic devices, respectively. In particular, it is critical to develop an ultra-low level doping technique for the proper design and optimization of TMD-based devices because high level doping (about $10^{12}cm^{-2}$) causes TMD to act as a near-metallic layer. However, it is difficult to apply an ion implantation technique to TMD materials due to crystal damage that occurs during the implantation process. Although safe doping techniques have recently been developed, most of the previous TMD doping techniques presented very high doping levels of ${\sim}10^{12}cm^{-2}$. Recently, low-level n- and p-doping of TMD materials was achieved using cesium carbonate ($Cs_2CO_3$), octadecyltrichlorosilane (OTS), and M-DNA, but further studies are needed to reduce the doping level down to an intrinsic level. Here, we propose a novel DNA-based doping method on $MoS_2$ and $WSe_2$ films, which enables ultra-low n- and p-doping control and allows for proper adjustments in device performance. This is achieved by selecting and/or combining different types of divalent metal and trivalent lanthanide (Ln) ions on DNA nanostructures. The available n-doping range (${\Delta}n$) on the $MoS_2$ by Ln-DNA (DNA functionalized by trivalent Ln ions) is between $6{\times}10^9cm^{-2}$ and $2.6{\times}10^{10}cm^{-2}$, which is even lower than that provided by pristine DNA (${\sim}6.4{\times}10^{10}cm^{-2}$). The p-doping change (${\Delta}p$) on $WSe_2$ by Ln-DNA is adjusted between $-1.0{\times}10^{10}cm^{-2}$ and $-2.4{\times}10^{10}cm^{-2}$. In the case of Co-DNA (DNA functionalized by both divalent metal and trivalent Ln ions) doping where $Eu^{3+}$ or $Gd^{3+}$ ions were incorporated, a light p-doping phenomenon is observed on $MoS_2$ and $WSe_2$ (respectively, negative ${\Delta}n$ below $-9{\times}10^9cm^{-2}$ and positive ${\Delta}p$ above $1.4{\times}10^{10}cm^{-2}$) because the added $Cu^{2+}$ ions probably reduce the strength of negative charges in Ln-DNA. However, a light n-doping phenomenon (positive ${\Delta}n$ above $10^{10}cm^{-2}$ and negative ${\Delta}p$ below $-1.1{\times}10^{10}cm^{-2}$) occurs in the TMD devices doped by Co-DNA with $Tb^{3+}$ or $Er^{3+}$ ions. A significant (factor of ~5) increase in field-effect mobility is also observed on the $MoS_2$ and $WSe_2$ devices, which are, respectively, doped by $Tb^{3+}$-based Co-DNA (n-doping) and $Gd^{3+}$-based Co-DNA (p-doping), due to the reduction of effective electron and hole barrier heights after the doping. In terms of optoelectronic device performance (photoresponsivity and detectivity), the $Tb^{3+}$ or $Er^{3+}$-Co-DNA (n-doping) and the $Eu^{3+}$ or $Gd^{3+}$-Co-DNA (p-doping) improve the $MoS_2$ and $WSe_2$ photodetectors, respectively.

• Economic and Environmental Geology
• /
• v.48 no.6
• /
• pp.431-449
• /
• 2015

The study area is located in the western part of the Precambrian stock type of Sancheong anorthosite complex, the Jirisan province of the Yeongnam massif, in the southern part of the Korean Peninsula. We perform a detailed field geological investigation on the Sancheong anorthosite complex, and report the characteristics of lithofacies, occurrences, foliations, and research formation process and its mechanism of the Sancheong anorthosite complex. The Sancheong anorthosite complex is classified into massive and foliation types of Sancheong anorthosite (SA), Fe-Ti ore body (FTO), and mafic granulite (MG). Foliations are developed in the Sancheong anorthosite complex except the massif type of SA. The foliation type of SA, FTO, MG foliations are magmatic foliations which were formed in a not fully congealed state of SA from a result of the flow of FTO and MG melts and the kinematic interaction of SA blocks, and were continuously produced in the comagmatic differentiation. The Sancheong anorthosite complex is formed as the following sequence: the massive type of SA (a primary fractional crystallization of parental magmas under high pressure)${\rightarrow}$ the foliation type of SA [a secondary fractional crystallization of the plagioclase-rich crystal mushes (anorthositic magmas) primarily differentiated from parental magmas under low pressure]${\rightarrow}$the FTO (an injection by filter pressing of the residual mafic magmas in the last differentiation stage of anorthositic magmas into the not fully congealed SA)${\rightarrow}$the MG (a solidification of the finally residual mafic magmas). It indicates that the massive and foliation types of SA, the FTO, and the MG were not formed from the intrusion and differentiation of magmas which were different from each other in genesis and age but from the multiple fractionation and polybaric crystallization of the coeval and cogenetic magma.