• 대한기계학회논문집B
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• 제26권1호
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• pp.82-93
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• 2002

The effects of the interaction between the flow and temperature field and a boundary layer due to a variety of the height of a vortex generator are experimentally investigated. The test facility consists of a boundary-layer wind tunnel with the vortex generator protruding from the bottom surface. In order to control the strength of the longitudinal vortices, the angle of attack and the spacing distance of the vortex generator are 20 degree and 40 mm, respectively. The height of the vortex generator (H) is 15 mm, 20 mm and 30 mm and the cord length of it is 50 mm. Three-component mean velocity measurements are made using a 5-hole probe system and the surface temperature distribution is measured by the hue capturing method using thermochromatic liquid crystals. By using the method mentioned above, the following conclusions are obtained from the present experiment. The boundary layer is thinned in the downwash region where the strong downflow and the lateral outflow of the boundary layer fluid occur and thickened in the upwash re,3ion where the longitudinal vortex sweeps low momentum fluid away from the bottom surface. In case that the height of the vortex generator increases, the averaged circulation and the maximum vorticity of the vortex pair decrease. The contours of the non-dimensional temperature show the similar trends fur all the cases (H=15 mm, 20 mm and 30 mm). The peak augmentation of the distribution of the local non-dimensional temperature occurs in the downwash region near the point of minimum boundary-layer thickness.

• 한국재료학회지
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• 제25권6호
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• pp.288-292
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• 2015

New lead-free piezoelectric ceramics $0.96[\{Bi_{0.5}(Na_{0.84}K_{0.16})_{0.5}\}_{1-x}La_x(Ti_{1-y}Nb_y)O_3]-0.04SrTiO_3$ (BNKT-ST-LN, where $x=y=0.00{\leq}(x=y){\leq}0.015)$ were synthesized using the conventional solid-state reaction method. Their crystal structure, microstructure, and electrical properties were investigated as a function of the La and Nb (LN) content. The X-ray diffraction patterns revealed the formation of a single-phase perovskite structure for all the LN-modified BNKT-ST ceramics in this study. The temperature dependence of the dielectric curves showed that the maximum dielectric constant temperature ($T_m$) shifted towards lower temperatures and the curves became more diffuse with an increasing LN content. At the optimum composition (LN 0.005), a maximum value of remnant polarization ($33C/cm^2$) with a relatively low coercive field (22 kV/cm) and high piezoelectric constant (215 pC/N) was observed. These results indicate that the LN co-modified BNKT-ST ceramic system is a promising candidate for lead-free piezoelectric materials.

• 한국재료학회지
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• 제17권2호
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• pp.73-80
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• 2007

For the sub-65 nm CMOS process, it is necessary to develop a new silicide material and an accompanying process that allows the silicide to maintain a low sheet resistance and to have an enhanced thermal stability, thus providing for a wider process window. In this study, we have evaluated the property and unit process compatibility of newly proposed composite silicides. We fabricated composite silicide layers on single crystal silicon from $10nm-Ni_{1-x}Co_x/single-crystalline-Si(100),\;10nm-Ni_{1-x}Co_x/poly-crystalline-\;Si(100)$ wafers (x=0.2, 0.5, and 0.8) with the purpose of mimicking the silicides on source and drain actives and gates. Both the film structures were prepared by thermal evaporation and silicidized by rapid thermal annealing (RTA) from $700^{\circ}C\;to\;1100^{\circ}C$ for 40 seconds. The sheet resistance, cross-sectional microstructure, surface composition, were investigated using a four-point probe, a field emission scanning probe microscope, a field ion beam, an X-ray diffractometer, and an Auger electron depth profi1ing spectroscopy, respectively. Finally, our newly proposed composite silicides had a stable resistance up to $1100^{\circ}C$ and maintained it below $20{\Omega}/Sg$., while the conventional NiSi was limited to $700^{\circ}C$. All our results imply that the composite silicide made from NiCo alloy films may be a possible candidate for 65 nm-CMOS devices.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제53권5호
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• pp.237-241
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• 2004

Amorphous silicon (a-Si) films are used in a broad range of solar cell, flat panel display, and sensor. Because of the greater ease of deposition and lower processing temperature, thin films are widely used for thin film transistors (TFTs). However, they have lower stability under the exposure of visible light and because of their low field effect mobility ($\mu$$_{FE}$ ) , less than 1 c $m^2$/Vs, they require a driving IC in the external circuits. On the other hand, polycrystalline silicon (poly-Si) thin films have superiority in $\mu$$_{FE}$ and optical stability in comparison to a-Si film. Many researches have been done to obtain high performance poly-Si because conventional methods such as excimer laser annealing, solid phase crystallization and metal induced crystallization have several difficulties to crystallize. In this paper, a new crystallization process using a molybdenum substrate has been proposed. As we use a flexible substrate, high temperature treatment and roll-to-roll process are possible. We have used a high temperature process above 75$0^{\circ}C$ to obtain poly-Si films on molybdenum substrates by a rapid thermal annealing (RTA) of the amorphous silicon (a-Si) layers. The properties of high temperature crystallized poly-Si studied, and poly-Si has been used for the fabrication of TFT. By this method, we are able to achieve high crystal volume fraction as well as high field effect mobility.

• 대한전자공학회논문지
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• 제27권2호
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• pp.81-92
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• 1990

MOCVD에 의하여 초격자 및 HEMT 구조를 성장하고 그 특성을 보고한다. GaAs/AlGaAs의 경우, 주기성(periodicity),계면 급준성, Al 조성 균일성을 경사연마 및 double crystal x-ray 측정에 의하여 확인하였고, 고립 양자우물의 양자효과(quantum size effect)에 의한 PL(photoluminescence) 스펙트럼을 관측하였다. 이 PL FWHM (full width at half maximum)과 우물 두께의 관계로 부터 계면 급준성이 1 monolayer fluctuation 정도인 초격자 구조가 성장되었음을 확인하였다. 한편, HEMT 구조의 경우에 헤테로 계면에 형성된 2차원 전자층의 존재를 C-V profile, SdH(shu-bnikov-de Haas)진동, 저온 Hall 측정을 통하여 확인하였다. 저온 Hall 측정에서 15K에서 sheet carrier density $5.5{\times}10^{11}cm^-2$,mobility $69,000cm^2/v.sec$, 77K에서 sheet carrier density $6.6{\times}10^{11}cm^-2$, mobility $41,200cm^2/v.sec$ 이었다. 또한 quantum Hall effect 측정으로 부터 잘 형성된 SdH 진동 및 quantized Hall plateau를 관측하였다.

• 마이크로전자및패키징학회지
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• 제13권4호
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• pp.27-36
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• 2006

약 10%이하의 Pt 또는 Ir 첨가시켜 니켈모노실리싸이드를 고온에서 안정화 시키는 것이 가능한지 확인하기 위해서 활성화영역을 가정한 단결정 실리콘 웨이퍼와 게이트를 상정한 폴리 실리콘 웨이퍼 전면에 Ni, Pt, Ir을 열증착기로 성막하여 10 nm-Ni/l nm-Pt/(poly)Si, 10 nm-Ni/l nm-Ir/(poly)Si 구조를 만들었다. 준비된 시편을 쾌속 열처리기를 이용하여 40초간 실리사이드화 열처리 온도를 $300^{\circ}C{\sim}1200^{\circ}C$ 범위에서 변화시켜 두께 50nm의 실리사이드를 완성하였다. 완성된 Pt와 Ir이 첨가된 니켈실리사이드의 온도별 전기저항변화, 두께변화, 표면조도변화, 상변화, 성분변화를 각각 사점전기저항측정기와 광발산주사전자현미경, 주사탐침현미경, XRD와 Auger depth profiling으로 각각 확인하였다. Pt를 첨가한 결과 기판 종류에 관계없이 기존의 니켈실리사이드 공정에 의한 NiSi와 비교하여 $700^{\circ}C$ 이상의 NiSi 안정화 구역을 넓히는 효과는 없었고 면저항이 커지는 문제가 있었다. Ir을 삽입한 경우는 단결정 실리콘 기판에서는 $500^{\circ}C$ 이상에서의 NiSi와 동일하게 $1200^{\circ}C$까지 안정한 저저항을 보여서 Ir이 효과적으로 Ni(Ir)Si 형태로 $NiSi_{2}$로의 상변태를 적극적으로 억제하는 특성을 보이고 있었고, 다결정 기판에서는 $850^{\circ}C$까지 효과적으로 NiSi의 고온 안정성을 향상시킬 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.243.1-243.1
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• 2015

To replace the based on silicon solar cells, the third generation solar cells, Dye-sensitized solar cells (DSSCs), is low fabrication than silicon solar cells, environmentally friendly and can be applied to various field. For this reason, the DSSCs have been continuously researched. But DSSCs have one drawback that is the low power conversion efficiency (PCE) than silicon solar cells. To solve the problem, we used the backr-eflector the Al foil that can be easily obtained from the surrounding in order to improve the efficiency of the DSSCs. Easily detachable Al foil back-reflector increases the photocurrent by enhancing the harvesting light because the discarded light is reused. It also leads to enhance the power conversion efficiency (PCE). In addition, we compared with the efficiency of the DSSCs that is applied and does not be applied with back-reflector according to the thickness of the TiO2 photoelectrode. When the back-reflector is applied to DSSCs, the photocurrent is increased. It leads to affect the efficiency. We used to solar simulator and Electrochemical Impedance Spectroscopy (EIS) to confirm the PCE and resistance. The DSSCs were also measured by External Quantum effect (EQE). At the same time, FE-SEM and XRD were used to confirm the thickness of layer and crystal structural of photoelectrode.

• Current Photovoltaic Research
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• 제4권3호
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• pp.124-129
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• 2016

Recently industry has voiced a need for optimally designing the production process of low-cost, high-quality ingots by improving productivity and reducing production costs with the Czochralski process. Crystalline defect control is important for the production of high-quality ingots. Also oxygen is one of the most important impurities that influence crystalline defects in single crystals. Oxygen is dissolved into the silicon melt from the silica crucible and incorporated into the crystalline a far larger amount than other additives or impurities. Then it is eluted during the cooling process, there by causing various defect. Excessive quantities of oxygen degrade the quality of silicone. However an appropriate amount of oxygen can be beneficial. because it eliminates metallic impurities within the silicone. Therefore, when growing crystals, an attempt should be made not to eliminate oxygen, but to uniformly maintain its concentration. Thus, the control of oxygen concentration is essential for crystalline growth. At present, the control of oxygen concentration is actively being studied based on the interdependence of various factors such as crystal rotation, crucible rotation, argon flow, pressure, magnet position and magnetic strength. However for methods using a magnetic field, the initial investment and operating costs of the equipment affect the wafer pricing. Hence in this study simulations were performed with the purpose of producing low-cost, high-quality ingots through the development of a process to optimize oxygen concentration without the use of magnets and through the following. a process appropriate to the defect-free range was determined by regulating the pulling rate of the crystals.

• 한국진공학회지
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• 제12권2호
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• pp.130-135
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• 2003

최근, poly-Si 박막은 저가의 박막소자응용을 위하여 사용되어 왔다. 그러나, 유리기판 위에서 일반적인 고상결정화(SPC) 방식으로 poly-Si 박막을 얻기는 불가능하다. 이러한 단점 때문에 유리와 같은 저가기판 위에 poly-Si을 결정화하는 연구가 최근 다양하게 진행되고 있다. 본 논문에서는 급속열처리(RTA)를 이용하여 유연한 기판인 몰리브덴 기판 위에서 a-Si:H를 성장시킨 후 고온결정화에 대한 연구를 진행하였다 고온결정화된 poly-Si 박막은 150$\mu\textrm{m}$ 두께의 몰리브덴 기판 위에 성장되었으며 결정화 온도는 고 진공하에서 $750^{\circ}C$~$1050^{\circ}C$ 사이에서 결정화된 시료에 대하여 결정화도, 결정화 면방향, 표면구조 및 전기적 특성이 조사되었다. 결정화온도 $1050^{\circ}C$에서 3분간 결정화된 시료의 결정화도는 92%를 나타내고 있었다. 결정화된 poly-Si 박막으로 제작된 TFT 소자로부터 전계효과 이동도 67 $\textrm{cm}^2$/Vs을 얻을 수 있었다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2009년도 춘계학술발표대회
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• pp.31.1-31.1
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• 2009

Carbon nanotubes (CNTs) are attractive material because of their superior electrical, mechanical, and chemical properties. Furthermore, their geometric features such as a large aspect ratio and a small radius of curvature at tip make them ideal for low-voltage field emission devices including backlight units of liquid crystal display, lighting lamps, X-ray source, microwave amplifiers, electron microscopes, etc. In field emission devices for display applications, the phosphor anode is positioned against the CNT emitters. In most case, light generated from the phosphor by electron bombardment passes through the anode front plate to reach observers. However, light is produced in a narrow depth of the surface of the phosphor layer because phosphor particles are big as much as several micrometers, which means that it is necessary to transmit through the phosphor layer. Hence, a drop of light intensity is unavoidable during this process. In this study, we fabricated a transparent cathode back plate by depositing an ultra-thin film of single walled CNTs (SWCNTs) on an indium tin oxide (ITO)-coated glass substrate. Two types of phosphor anode plates were employed to our transparent cathode back plate: One is an ITO glass substrate with a phosphor layer and the other is a Cr-coated glass substrate with phosphor layer. For the former case, light was radiated from both the front and the back sides, where luminance on the back was ~30% higher than that on the front in our experiments. For the other case, however, light was emitted only from the cathode back side as the Cr layer on the anode glass rolled as a reflecting mirror, improving the light luminance as much as ~60% compared with that on the front of one. This study seems to be discussed about the morphologies and field emission characteristics of CNT emitters according to the experimental parameters in fabricating the lamps emitting light on the both sides or only on the cathode back side. The experimental procedures are as follows. First, a CNT aqueous solution was prepared by ultrasonically dispersing purified SWCNTs in deionized water with sodium dodecyl sulfate (SDS). A milliliter or even several tens of micro-liters of CNT solution was deposited onto a porous alumina membrane through vacuum filtration. Thereafter, the alumina membrane was solvated with the 3 M NaOH solution and the floating CNT film was easily transferred to an ITO glass substrate. It is required for CNT film to make standing CNTs up to serve as electron emitter through an adhesive roller activation.