• KIEE International Transactions on Electrophysics and Applications
• /
• v.11C no.4
• /
• pp.138-141
• /
• 2001

The fluorescence emission spectrum of Cr$^{3+}$ doped BeAl$_{6}$ O$_{10}$ crystals at 300 K contains a broad band, three R-like lines and another emission lines. It has been identified by a lifetime resolution spectroscopic technique that there are three kinds of single-Cr$^{3+}$ centers, Cr(I), Cr(II), Cr(III), in this crystal. Cr(I) and Cr(II) are high-crystal field centers responsible for the three main "R-lines", and Cr(III) is a low-crystal field center responsible for the main broad band emission. The structures of these luminescent centers are reported.ted.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.6 no.1
• /
• pp.1-10
• /
• 1996

A numerical study was conducted on the effects of the cusp magnetic field in 8" silicon single crystal grwoth by Czochralski method. For a damping effects simulation by magnetic field, low reynolds number ${\kappa} - {\varepsilon}$ model was adopted. Symmetrci cusp magnetic field has a effect of damping streamline crystal, is lowerd with the increasing cusp magnetic field intensity. The uniformity of the oxygen concentration was improved. The asymmetirc cusp magnetic field increased the oxygen concentration however, oxygen concentration distribution in the radial direction was remained uniform. Suitable combination of symmetric and asymmetric cusp magnetic fields could give uniform and low oxygen concentration in the axial direction.tion.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.16 no.4
• /
• pp.292-297
• /
• 2003

We fabricated a single crystal silicon thin film transistor for active matrix organic light emitting displays(AMOLEDs) using silicon on insulator wafer (SOI wafer). Poly crystal silicon thin film transistor(poly-Si TFT) Is actively researched and developed nowsdays for a pixel switching devices of AMOLEDs. However, poly-Si TFT has some disadvantages such as high off-state leakage currents and low field-effect mobility due to a trap of grain boundary in active channel. While single crystal silicon TFT has many advantages such as high field effect mobility, low off-state leakage currents, low power consumption because of the low threshold voltage and simultaneous integration of driving ICs on a substrate. In our experiment, we compared the property of poly-Si TFT with that of SOI TFT. Poly-Si TFT exhibited a field effect mobility of 34 $\textrm{cm}^2$/Vs, an off-state leakage current of about l${\times}$10$\^$-9/ A at the gate voltage of 10 V, a subthreshold slope of 0.5 V/dec and on/off ratio of 10$\^$-4/, a threshold voltage of 7.8 V. Otherwise, single crystal silicon TFT on SOI wafer exhibited a field effect mobility of 750 $\textrm{cm}^2$/Vs, an off-state leakage current of about 1${\times}$10$\^$-10/ A at the gate voltage of 10 V, a subthreshold slope of 0.59 V/dec and on/off ratio of 10$\^$7/, a threshold voltage of 6.75 V. So, we observed that the properties of single crystal silicon TFT using SOI wafer are better than those of Poly Si TFT. For the pixel driver in AMOLEDs, the best suitable pixel driver is single crystal silicon TFT using SOI wafer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.06a
• /
• pp.440-441
• /
• 2006

We have studied the narrow viewing angle liquie crystal displays (LCDs) using a hybrid aligned nematic liquid crystal (LC) cell driven by a fringe field. The device using a LC with positive dielectric anisotropy has a relatively low transmittance. This paper describes how to improve light efficiency by optimizing electrode structure. The results show that the device exhibits a high transmittance of 90%, low driving voltage and narrow viewing angle less than $20^{\circ}$ along horizontal direction which is highly effective for private display application.

• Proceedings of the Korea Association of Crystal Growth Conference
• /
• 1997.06a
• /
• pp.243-246
• /
• 1997

A new technique for low temperature crystallization of amorphous silicon, called field aided lateral crystallization(FALC) was attempted. To demonstrate the concept of FALC, thin layer of nickel(30${\AA}$) was deposited on top of amorphous silicon film and the electric field was applied during the crystallization. The effects of electric field on the crystallization behavior of amorphous silicon film were investigated.

• Korean Journal of Materials Research
• /
• v.21 no.2
• /
• pp.73-77
• /
• 2011

Specific heat of a crystal is the sum of electronic specific heat, which is the specific heat of conduction electrons, and lattice specific heat, which is the specific heat of the lattice. Since properties such as crystal structure and Debye temperature do not change even in the superconducting state, the lattice specific heat may remain unchanged between the normal and the superconducting state. The difference of specific heat between the normal and superconducting state may be caused only by the electronic specific heat difference between the normal and superconducting states. Critical temperature, at which transition occurs, becomes lower than $T_{c0}$ under the influence of a magnetic field. It is well known that specific heat also changes abruptly at this critical temperature, but magnetic field dependence of jump of specific heat has not yet been developed theoretically. In this paper, specific heat jump of superconducting crystals at low temperature is derived as an explicit function of applied magnetic field H by using the thermodynamic relations of A. C. Rose-Innes and E. H. Rhoderick. The derived specific heat jump is compared with experimental data for superconducting crystals of $MgCNi_3$, $LiTi_2O_4$ and $Nd_{0.5}Ca_{0.5}MnO_3$. Our specific heat jump function well explains the jump up or down phenomena of superconducting crystals.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.17 no.6
• /
• pp.633-640
• /
• 2004

We have studied color tracking of a fringe-field driven homogenously aligned nematic liquid crystal (LC) cell with negative dielectric anisotropy and compared it with other devices such as the twisted nematic(TN) and in-plane switching(IPS) modes. According to studies, the TN device shows bluish color at grey scale and even at a low retardation cell it cannot avoid color tracking. The authentic IPS device having cell retardation value of 0.23 ${\mu}{\textrm}{m}$ also shows bluish white color. However, the FFS device shows excellent color tracking characteristics even at high retardation value of the cell while keeping high transmittance and greenish white.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.11a
• /
• pp.563-566
• /
• 2004

We have studied a electrically controlled birefringence (ECB) mode for field sequential liquid crystal display (FSLCD). We measured response time of the ECB mode. The ECB mode exhibiting fast response time, high transmittance, low operating voltage and adequate viewing angle. The positive liquid crystal (LC) is better than negative LC on dielectric anisotropy, birefringence and rotational viscosity. So that, the ECB mode is one of strongest candidate for FSLCD application.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.18 no.8
• /
• pp.724-728
• /
• 2005

Electro-optic characteristics of reflective hybrid aligned liquid crystal (LC) cell driven by fringe field using a nematic LC with positive dielectric anisotropy have been studied. Optimized optical configurations are achieved by using a single polarizer, half-wave film and a cell with quarter-wave retardation. The simulation results shows an optimum cell retardation of $0.30{\mu}m$. This value may allow a practical cell gap larger than $3{\mu}m$, which makes it easy to control in the manufacturing process. Furthermore, this LC cell with optimized cell parameters shows low wavelength dispersion and the contrast ratio greater than 5 over exists about $100{\circ}$ in vertical direction and $160{\circ}$ in horizontal direction. Also, when using the LC with positive dielectric anisotropy rather than negative dielectric anisotropy, the display shows low power consumption and fast response time.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.295-296
• /
• 2009

There are various application of liquid crystal materials to devices, especially, blue phase liquid crystal (BPLC) and nano-structured liquid crystal mixture have been studied recently because BPs existing temperature range has been expanded by polymer-stabilization and liquid crystal has been confined in room which has certain coherence length so that their particular characters, such as fast response time and optically isotropic state at no electric field, could apply to advanced liquid crystal display devices. However, there is an crucial problem which is high operating voltage from low Kerr constant and limited electric field utilization using in-plain electric field. In this paper, we will analyze cell structure in the way of using electric field and show effective electric field utilization to reduce operating voltage.