• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계합동학술대회 논문집
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• pp.153-157
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• 2002

This paper deals with the relationships between MgO manufacturing condition and misfiring at low temperature. The characteristics of MgO are affected by substrate temperature and MgO deposition current. In this study. the. substrate temperature was varied from $100^{\circ}C$ to $200^{\circ}C$. And the MgO deposition current was varied from 5mA to 20mA. As a result. the misfiring at low temperature was decreased in the panels with substrate temperature $200^{\circ}C$ and MgO deposition current 5mA. These results may be explained that the higher substrate temperature and lower MgO deposition current makes the denser film formation.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.244-244
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• 2010

Doping process of crystalline silicon solar cell process is very important which is as influential on efficiency of solar. Doping process consists of pre -deposition and diffusion. Each of these processes is important in the process temperature and process time. Through these process conditions variable, p-n junction depth can be controled to low and high. In this paper, we studied a optimized doping pre-deposition temperature for high solar cell efficiency. Using a $200{\mu}m$ thickness multi-crystalline silicon wafer, fixed conditions are texture condition, sheet resistance($50\;{\Omega}/sq$), ARC thickness(80nm), metal formation condition and edge isolation condition. The three variable conditions of pre-deposition temperature are $790^{\circ}C$, $805^{\circ}C$ and $820^{\circ}C$. In the $790^{\circ}C$ pre-deposition temperature, we achieved a best solar cell efficiency of 16.2%. Through this experiment result, we find a high efficiency condition in a low pre-deposition temperature than the high pre-deposition temperature. We optimized a pre-deposition temperature for high solar cell efficiency.

• 한국세라믹학회지
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• 제34권8호
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• pp.825-833
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• 1997

Silicon carbide films were deposited by low pressure chemical vapor deposition(LPCVD) using MTS(CH3SICl3) in hydrogen atmosphere on (100) Si substrate. To prevent the unstable interface from being formed on the substrate, the experiments were performed through three deposition processes which were the deposition on 1) as received Si, 2) low temperature grown SiC, and 3) carbonized Si by C2H2. The microstructure of the interface between Si substrates and SiC films was observed by SEM and the adhesion between Si substrates and SiC films was measured through scratch test. The SiC films deposited on the low temperature grown SiC thin films, showed the stable interfacial structures. The interface of the SiC films deposited on carbonized Si, however, was more stable and showed better adhesion than the others. In the case of the low temperature growth process, the optimum condition was 120$0^{\circ}C$ on carbonized Si by 3% C2H2, at 105$0^{\circ}C$, 5 torr, 10 min, showed the most stable interface. As a result of XRD analysis, it was observed that the preferred orientation of (200) plane was increased with Si carbonization. On the basis of the experimental results, the models of defect formation in the process of each deposition were compared.

• 대한기계학회논문집B
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• 제21권3호
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• pp.436-444
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• 1997

Three-dimensional conjugate heat transfer and particle deposition on a circular cylinder in the OVD process are numerically investigated. Flow and temperature fields are obtained by an iterative method, and thermophoretic particle deposition is simulated. Effects of the heat conduction in the cylinder, the rotation speed of the cylinder, and the traversing speed of torch on the deposition are studied. Effects of variable properties are also included. As the conductivity of the cylinder decreases, particle deposition rate and deposition efficiency greatly decrease due to the reduced temperature gradient. The rotation of the cylinder has no significant effect on the deposition due to the small diameter of the cylinder and low speed of rotation. Since the increase of the torch speed keeps the surface low temperature, the particle deposition increases with the traversing speed.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.201-202
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• 2003

We developed a novel growth method of aligned carbon nanotubes. Aligned carbon nanotubes are grown on a metal catalyst on a glass substrate using biased Helicon plasma chemical vapor deposition (HPECVD) of $CH_4/H_2$ gases from 400 C to 500 C. The Helicon plasma source is one of the high-density plasma sources and is promising for low temperature carbon deposition. A Ni film was used as a catalyst to reduce the activation energy of the nanotubes' growth. The carbon nanotubes were deposited on the nickel catalysis layer selectively.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.475-475
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• 2014

Dye sensitized solar cells (DSSCs) are regarded as potential inexpensive alternatives to conventional solid-state devices. The flexible version, employing conductive-plastic-film substrates, is appealing for commercialization of DSSCs because it not only reduces the weight and cost of the device but also extends their applications. However, the need for high temperature does not permit the use of plastic-film substrate. So, development of low-temperature methods is therefore realization of flexible DSSCs. In this work, the electrophoretic deposition combined with hydrothermal treatment was employed to prepare nanocrystalline $TiO_2$ thin film at low temperature. We confirmed the prepared $TiO_2$ thin films with different voltages and deposition times in the electrophoretic deposition process. Properties of the $TiO_2$ films were investigated by various analysis method such as X-ray diffraction, field emission scanning electron microscopy (FESEM) and UV-visible spectrophotometer.

• Bulletin of the Korean Chemical Society
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• 제34권2호
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• pp.505-509
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• 2013

A low temperature ($65^{\circ}C$) thermal deposition process was developed for depositing a silver coating on thermally sensitive polymeric substrates. This low temperature deposition was achieved by chemical reduction of a silver alkylcarbamate complex with latent reducing agent. The effects of acetol as a latent reducing agent for the silver 2-ethylhexylcarbamate (Ag-EHCB) complex and their blend solutions were investigated in terms of reducing mechanism, and the size and shape of silver nanoparticles (Ag-NPs) as a function of reduced temperature and time, and PVP stabilizer concentration were determined. Low temperature deposition was achieved by combining chemical reduction with thermal heating at $65^{\circ}C$. A range of polymer film, sheet and molding product was coated with silver at thicknesses of 100 nm. The effect of process parameters and heat treatment on the properties of silver coatings was investigated.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.433-433
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• 2013

Graphene, $sp^2$-hybridized 2-Dimension carbon material, has drawn enormous attention due to its desirable performance of excellent properties. Graphene can be applied for many electronic devices such as field-effect transistors (FETs), touch screen, solar cells. Furthermore, indium tin oxide (ITO) is commercially used and sets the standard for transparent electrode. However, ITO has certain limitations, such as increasing cost due to indium scarcity, instability in acid and basic environments, high surface roughness and brittle. Due to those reasons, graphene will be a perfect substitute as a transparent electrode. We report the graphene synthesized by inductive coupled plasma enhanced chemical vapor deposition (ICP-PECVD) process on Cu substrate. The growth was carried out using low temperature at $400^{\circ}C$ rather than typical chemical vapor deposition (CVD) process at $1,000^{\circ}C$ The low-temperature process has advantage of low cost and also low melting point materials will be available to synthesize graphene as substrate, but the drawback is low quality. To improve the quality, the factor affect the quality of graphene was be investigated by changing the plasma power, the flow rate of precursors, the scenario of precursors. Then, graphene film's quality was investigated with Raman spectroscopy and sheet resistance and optical emission spectroscopy.

• 한국표면공학회지
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• 제48권3호
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• pp.126-130
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• 2015

A high-pressure depletion method using plasma chemical vapor deposition (CVD) is often used to deposit hydrogenated microcrystalline silicon (${\mu}c-Si:H$) films of a low defect density at a high deposition rate. To understand proper deposition conditions of ${\mu}c-Si:H$ films for a high-pressure depletion method, Si films were deposited in a combinatorial way using a multi-hollow discharge plasma CVD method. In this paper the substrate temperature dependence of ${\mu}c-Si:H$ film properties are demonstrated. The higher substrate temperature brings about the higher deposition rate, and the process window of device quality ${\mu}c-Si:H$ films becomes wider until $200^{\circ}C$. This is attributed to competitive reactions between Si etching by H atoms and Si deposition.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.52-52
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• 2011

A novel deposition process for n-type nanocrystalline silicon (n-type nc-Si) thin films at room temperature has been developed by adopting the neutral beam assisted chemical vapor deposition (NBa-CVD). During formation of n-type nc-Si thin film by the NBa-CVD process with silicon reflector electrode at room temperature, the energetic particles could induce enhance doping efficiency and crystalline phase in polymorphous-Si thin films without additional heating on substrate; The dark conductivity and substrate temperature of P-doped polymorphous~nano crystalline silicon thin films increased with increasing the reflector bias. The NB energy heating substrate(but lower than $80^{\circ}C$ and increase doping efficiency. This low temperature processed doped nano-crystalline can address key problem in applications from flexible display backplane thin film transistor to flexible solar cell.