• Journal of the Korea Institute of Military Science and Technology
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• v.2 no.2
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• pp.157-165
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• 1999

Production and measurement of a super-polished few-ppm-scattering mirror substrate are investigated. In order to improve the surface roughness directly determining scattering, the super-polishing process using Bowl-Feed technique is tried. The surface quality of the super-polished substrate is estimated by the phase-measuring interferometer. For the reliable roughness measurement using the interferometer, data averaging method is applied so that the optimal data averaging condition, 30 phase-data averaging and 20 intensity-data averaging, minimizing the measurement error is experimently searched. Based on the optimal data averaging condition, surface roughness of home-made mirror substrate is measured to be less than $0.5{\AA}$ rms corresponding to 2-ppm total-integrated-scattering.

• Journal of the Optical Society of Korea
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• v.16 no.1
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• pp.80-84
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• 2012

A high reflectance mirror, which has very low absorption and scattering loss, was coated onto a crystalline substrate by ion beam sputtering and then annealed at $450^{\circ}C$. We carefully selected the mirror coating material, and designed the high reflectance mirror, in order to avoid UV degradation which comes from the He-Ne plasma. We measured the surface roughness of the Zerodur substrate using phase shift interferometry and atomic force microscopy, and compared it with the TIS scattering of the mirror. The cavity ring-down method was used to measure the absorption of the mirror, and the thin film structure was correlated to its results. We also compared the optical properties of coated mirrors before and after annealing.

• Korean Journal of Optics and Photonics
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• v.13 no.3
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• pp.209-214
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• 2002

The effect of surface roughness on mirror scattering has been studied. Five kinds of substrates with different surface roughness were fabricated. On those substrates, a dielectric multi-layer coating with high reflectivity was deposited by ion beam sputtering and electron beam evaporation. A total integrated scattering measurement set-up was built for the evaluation of deposited samples. Most of the ion beam sputtered mirrors showed lower scattering than the electron beam evaporated one, which deposited on substrates similar in surface roughness. Over ~2 $\AA$ in surface roughness, scattering strongly depend on the micro-structure of the super-polished surface. The lowest scattering we have achieved is 2.06 ppm by ion beam sputtering from the substrate with surface roughness of 0.23 $\AA$.

• Korean Journal of Optics and Photonics
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• v.18 no.6
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• pp.452-460
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• 2007

Ultra-low loss ZERODUR and fused silica mirrors were manufactured and their light scattering characteristics were investigated. For this purpose, ZERODUR and fused silica substrates were super-polished by the bowl feed method. The surface roughness were 0.292 ${\AA}$ and 0.326 ${\AA}$ in rms for ZERODUR and fused silica, respectively. To obtain the high reflectivity, 22 thin film layers of $SiO_2$ and $Ta_2O_5$ were deposited by Ion Beam Sputtering. The measured light scattering of ZERODUR and fused silica mirror were 30.9 ppm and 4.6 ppm, respectively. This shows that the substrate surface roughness is not the only parameter which determines the light scattering of the mirror. In order to investigate the mechanism for additional light scattering of the ZERODUR mirror, the surface roughness of the mirror was measured by AFM and was found to be 2.3 times higher than that of the fused silica mirror. It is believed that there is some mismatch at the interface between the substrate and the first thin film layer which leads to the increased mirror surface roughness. To clarify this, the contact angle measurements were performed by SEO 300A, based on the Giriflaco-Good-Fowkes-Young method. The fused silica substrates with 0.46 ${\AA}$ in its physical surface roughness shows lower contact angle than that of the ZERODUR substrate with 0.31 ${\AA}$. This indicates that the thin film surface roughness is determined by not only its surface roughness but also the surface energy of the substrate, which depends on the chemical composition or crystalline orientation of the materials. The surface energy of each substrate was calculated from a contact angle measurement, and it shows that the higher the surface energy of the substrate, the better the surface roughness of the thin film.

• Bulletin of the Korean Chemical Society
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• v.28 no.4
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• pp.533-537
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• 2007

This paper describes the heteroepitaxial growth of single-crystalline 3C-SiC (cubic silicon carbide) thin films on Si (100) wafers by atmospheric pressure chemical vapor deposition (APCVD) at 1350 oC for micro/nanoelectromechanical system (M/NEMS) applications, in which hexamethyldisilane (HMDS, Si2(CH3)6) was used as a safe organosilane single-source precursor. The HMDS flow rate was 0.5 sccm and the H2 carrier gas flow rate was 2.5 slm. The HMDS flow rate was important in obtaing a mirror-like crystalline surface. The growth rate of the 3C-SiC film in this work was 4.3 μm/h. A 3C-SiC epitaxial film grown on the Si (100) substrate was characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), reflection high energy electron diffraction (RHEED), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS) and Raman scattering, respectively. These results show that the main chemical components of the grown film were single-crystalline 3C-SiC layers. The 3C-SiC film had a very good crystal quality without twins, defects or dislocations, and a very low residual stress.