• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.09a
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• pp.52-59
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• 2001

The photoluminescence and the photo-current from p-type GaN films were investigated on both room- and low-temperatures for various Mg doping concentrations. At a low Mg doping level, there exists a photoluminescence center of the donor and the acceptor pair transition of the 3.28-eV band. This center is correlated with the defects for a shallow donor of the VGa and for an acceptor of MgGa. The acceptor level shows the binding energy of 0.2-0.25 eV, which was observed by the photon energy of the photo-current signal of 3.02-3.31 eV. At a high Mg doping level, there is a photoluminescence center of a deep donor and an acceptor pair transition of the 2.76-eV blue band. This center is attributed to the defect structures of MgGa-VN for the deep donor and MgGa for the acceptor. For low. doped samples, thermal annealing provides an additional photo-current signal for an unoccupied deep acceptor levels of 0.87-1.35 eV above valence band, indicating the p-type activation.

• The Journal of the Korea Contents Association
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• v.15 no.6
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• pp.283-289
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• 2015

Recently, high energy photon radiotherapy is a growing trend for increasing therapy results. Commonly, if you use high energy photons above 6~8 MeV nominal accelerator voltage, It lead the photo-nuclear reaction and the generation of photo-neutron are accompanied and these problematic factors are issued in the view of radiation protection. Therefore, in this study analyzed for dose distribution of photo-neutron in radiotherapy room based on MCNPX. As a result, absorbed dose is increased sharply from 10 MV to 12 MV. It was founded that the rapid increasement of photoneutron fluence was related to the absorbed dose at above 10 MV. Also, in case of the recommendation of ICRP 103, the outcome of an exchanged equivalent dose which based on calculated an absorbed dose, showed lower equivalent dose than ICRP 60 by reflecting the contribution of secondary photon for absorbed dose of human body in the low energy band.

• Journal of Radiation Protection and Research
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• v.21 no.2
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• pp.125-129
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• 1996

The energy response of HPGe detector for low energy Photons was determined by using three Monte Carlo codes. MCNP4A. EGS4, and CYLTRAN in ITS3. In this study. bare HPGe detector$(100 mm^2{\times}10mm)$ was used and a pencil beam was incident perpendicularly on the center of the detector surface. The photopeak efficiency, $K_{\alpha}$ and $K_{\beta}$ escape fractions were calculated as a function of incident X-ray energies ranging from 12 to 60 keV in 2-keV increments. Since the Compton. elastic. ana penetration fraction were negligible in this energy range. they were ignored in the calculation. Although MCNP. EGS, and CYLTRAN codes calculated slightly different energy response of HPGe detector for low energy Photons, it appears that the three Monte Carlo codes can Predict the low energy Photon scattering Processes accurately. The MCNP results, which are generally known as to be less accurate at low energy ranges than the EGS and ITS results. are comparable to the results of EGS and ITS and are applicable to the calculation of the low energy response data of a detector.

• Electrical & Electronic Materials
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• v.10 no.1
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• pp.39-44
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• 1997

Bulk type radiation detector of Au/Cd$_{1-x}$ Zn$_{x}$Te(x=20%)/Au structure using Cd$_{1-x}$ Zn$_{x}$Te(x=20%) wafer(3x4xl mm$^{3}$) grown by high pressure Bridgman method has been developed. We etched wafer surfaces with 2% Br-methanol solution and coated gold thin film on the surfaces by electroless deposition method for 5 min. in 49/o HAuCI$_{3}$ 4H20 solution. Initial etch rates of Cd, Zn and Te were 46%, 12% and 42% respectively. After etched, the surface of wafer was slightly revealed to Te rich condition. The leakage current was increased with etch time, but it didn't exceed 3nA at 50volt. The thickness of Au film was about 100nm by Rutherford Backscattering Spectroscopy(RBS). The resolution were 6.7% for 22.1 keV photon from 109 $^{109}$ Cd and 8.2% for 59.5 keV photon from $^{241}$ Am. The radiation detector such as Au/Cd$_{1-x}$ Zn$_{x}$Te(x=20%)/Au structure was more effective to monitor the low energy gamma radiation.iation.

• Nuclear Engineering and Technology
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• v.41 no.5
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• pp.723-728
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• 2009

The response property of the CZT detector ($5{\times}5{\times}5\;mm^3$), widely used in photon spectroscopy, was evaluated by considering the charge collection efficiency, which depends on the interaction position of incident radiation, A quantitative analysis of the energy spectra obtained from the CZT detector was also performed to investigate the tail effect at the low energy side of the full energy peak. The collection efficiency of electrons and holes to the two electrodes (i.e., cathode and anode) was calculated from the Hecht equation, and radiation transport analysis was performed by two Monte Carlo codes, Geant4 and MCNPX. The radiation source was assumed to be 59.5 keV gamma rays emitted from a $^{241}Am$ source into the cathode surface of this detector, and the detector was assumed to be biased to 500 V between the two electrodes. Through the comparison of the results between the Geant4 calculation considering the charge collection efficiency and the ideal case from MCNPX, an pronounced difference of 4 keV was found in the full energy peak position. The tail effect at the low energy side of the full energy peak was confirmed to be caused by the collection efficiency of electrons and holes. In more detail, it was shown that the tail height caused by the charge collection efficiency went up to 1000 times the pulse height in the same energy bin at the calculation without considering the charge collection efficiency. It is, therefore, apparent that research considering the charge collection efficiency is necessary in order to properly analyze the characteristics of CZT detectors.

• Journal of Environmental Science International
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• v.30 no.11
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• pp.907-914
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• 2021

In this study, strawberry cultivation environment in a greenhouse located in Jeonju was monitored and internal environmental parameters were analyzed. Temperature, humidity, RAD, and PPF sensors were installed to monitor environmental conditions in the test greenhouse. Data were collected every 10 minutes during four winter months from sensors placed across the greenhouse to assess its permeability and environmental uniformity. Temperature and humidity inside the greenhouse were relatively uniform with negligible deviations among the center, south, and north; however, it was judged that further analysis of gradients of these parameters from the east to the west of the greenhouse would be needed. Both RAD (Total solar radiation) and PPF (Photosynthetic photon flux) had high values on the south and were low on the north and the reduction rate of these parameters was 54% and 61%, respectively, indicating that a significant amount of light could not be transmitted. This implied a significant decrease in the amount of light entering the greenhouse during winter. Therefore, it is concluded that environmental control devices and auxiliary lighting are needed to achieve uniform greenhouse environment for efficient strawberry cultivation.

• Journal of The Korean Astronomical Society
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• v.27 no.1
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• pp.45-53
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• 1994

We present the calculation of X -ray spectra produced through Compton scattering of soft X-rays by hot electrons in the spherical shell geometry, using fully relativistic Monte Carlo simulation. With this model, we show that the power-law component, which has been observed in the low luminosity state of low-mass X-ray binaries (LMXBs), is explained physically. From a spectral. analysis, we find that spectral hardness is mainly due to the relative contribution of scattered component. In addition, we see that Wi en spectral features appear when the plasma is optically thick, especially in the high energy range, $E{\gtrsim}100keV$. We suggest that after a number of scattering the escape probability approaches an asymptotic form depending on the geometry of the scattering medium rather than on the initial photon spectrum.

• Electrical & Electronic Materials
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• v.8 no.2
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• pp.129-135
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• 1995

SiO thin films are deposited by evaporator the refractive index of wave length, photon energy and the absorptive rate of these films are measured by spectroscopic ellipsometer. It is derived the absorptive rate and permitivity of SiO thin films from the equations that calculating the refractive index. And the result show good agreement with the calculated values and experimental values. As a result, the wave length of light is increased in the condition that the angle of incidence is fixed on SiO thin film, the basic absorption and the absorption impurities are found in the low wave length (below 450 nm in this study) and the reflective absorption and conductive absorption is increased by the form of exponential function over the low wavelength. The absorptive rate is increased by increased the angle of incidence and thickness of SiO film for the insulating layer. As the thickness of SiO film is increased, the value of complex permitivity is decreasing and as wave length of incidence is increased., the value of dielectric is linearly increasing.

• Electrical & Electronic Materials
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• v.10 no.6
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• pp.570-575
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• 1997

In this days, the thinner film of dielectric materials is required while its capacitance is required to be still large at the VLSI process. Most of such VLSI have MOS structures. For the research on this requirement, MOS capacitors were fabricated on the silicon wafer in four different thickness groups by RF sputtering method. SiO of the SiO/TiN film is used as the insulating layer and TiN is chosen as the barrier against the diffusion of Al which is the terminal connected by ohmic contact because TiN has the advantageous properties such as good thermal stability and very low diffusion rate in spite of its relatively low specific resistance. In this study their electrical and optical characteristics are investigated to find refractive index, absorption coefficient and Permittivity.

• Journal of Radiation Protection and Research
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• v.49 no.1
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• pp.29-39
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• 2024

Background: The gamma emission tomography (GET) device has been reported a reliable technique to inspect partial defects within spent nuclear fuel (SNF) of pin-by-pin level. However, the existing GET devices have low accuracy owing to the high attenuation and scatter probability for SNF inspection condition. The purpose of this study is to design and optimize a Yonsei single-photon emission computed tomography version 2 (YSECT.v.2) for fast inspection of SNF in water storage by acquisition of high-quality tomographic images. Materials and Methods: Using Geant4 (Geant4 Collaboration) and DETECT-2000 (Glenn F. Knoll et al.) Monte Carlo simulation, the geometrical structure of the proposed device was determined and its performance was evaluated for the ¹³⁷Cs source in water. In a Geant4-based assessment, proposed device was compared with the International Atomic Energy Agency (IAEA)-authenticated device for the quality of tomographic images obtained for 12 fuel sources in a 14 × 14 Westinghouse-type fuel assembly. Results and Discussion: According to the results, the length, slit width, and septal width of the collimator were determined to be 65, 2.1, and 1.5 mm, respectively, and the material and length of the trapezoidal-shaped scintillator were determined to be gadolinium aluminum gallium garnet and 45 mm, respectively. Based on the results of performance comparison between the YSECT.v.2 and IAEA's device, the proposed device showed 200 times higher performance in gamma-detection sensitivity and similar source discrimination probability. Conclusion: In this study, we optimally designed the GET device for improving the SNF inspection accuracy and evaluated its performance. Our results show that the YSECT.v.2 device could be employed for SNF inspection.