• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.10a
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• pp.326-329
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• 2005

As a flexible method to fabricate sub-micrometer patterns, Focused Ion Beam (FIB) instrument and Self-Assembled Monolayer (SAM) resist are introduced in this work. FIB instrument is known to be a very precise processing machine that is able to fabricate micro-scale structures or patterns, and SAM is known as a good etch resistance resist material. If SAM is applied as a resist in FIB processing fur fabricating nano-scale patterns, there will be much benefit. For instance, low energy ion beam is only needed for machining SAM material selectively, since ultra thin SAM is very sensitive to $Ga^+$ ion beam irradiation. Also, minimized beam spot radius (sub-tens nanometer) can be applied to FIB processing. With the ultimate goal of optimizing nano-scale pattern fabrication process, interaction between SAM coated specimen and $Ga^+$ ion dose during FIB processing was observed. From the experimental results, adequate ion dose for machining SAM material was identified.

• Journal of information and communication convergence engineering
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• v.1 no.4
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• pp.228-232
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• 2003

The previous design work for very large final amplifier pumped by electron beam module was described from the point of view of energy characteristics. In this work, the design problems for phase front distortion, ASE, and gain control in large aperture amplifier are presented in detail.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.42 no.6
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• pp.49-56
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• 2005

An electron microbeam system has been developed to investigate the biological effect of cells by irradiating cell-nuclei with low-energy and low-flux electrons. It is essential to discern the cell nucleus from its cytoplasm and the culture medium and to locateit exactly onto the beam exit. The irradiation speed at more than 10,000 cells per hour is another requisite for the observations on cellular response to have good statistics. Long-time labor with patience and high concentration is needed since the frames of $320{\times}240{\mu}m^2$ should be moved more than 500 times for irradiating more than 10,000 cells per an hour. This paper describes the electron microbeam system with a focus on the user interfaces concerning the process of automatically recognizing the cell nuclei and injecting electron beam into the target cell nuclei at the irradiation speed of more than 10,000 cell nuclei per hour.

• Progress in Medical Physics
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• v.32 no.4
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• pp.165-171
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• 2021

Purpose: This study aimed to evaluate the effect of collimator width on effective atomic number (EAN), relative electron density (RED), and stopping power ratio (SPR) measured by dual-layer dual-energy computed tomography (DL-DECT). Methods: CIRS electron density calibration phantoms with two different arrangements of material plugs were scanned by DL-DECT with two different collimator widths. The first phantom included two dense bone plugs, while the second excluded dense bone plugs. The collimator widths selected were 64 mm×0.625 mm for wider collimators and 16 mm×0.625 mm for narrow collimators. The scanning parameters were 120 kVp, 0.33 second gantry rotation, 3 mm slice thickness, B reconstruction filter, and spectral level 4. An image analysis portal system provided by a computed tomography (CT) manufacturer was used to derive the EAN and RED of the phantoms from the combination of low energy and high energy CT images. The EAN and RED were compared between the images scanned using the two different collimation widths. Results: The CT images with the wider collimation width generated more severe artifacts, particularly with high-density material (i.e., dense bone). RED and EAN for tissues (excluding lung and bones) with the wider collimation width showed significant relative differences compared to the theoretical value (4.5% for RED and 20.6% for EAN), while those with the narrow collimation width were closer to the theoretical value of each material (2.2% for EAN and 2.3% for RED). Scanning with narrow collimation width increased the accuracy of SPR estimation even with high-density bone plugs in the phantom. Conclusions: The effect of CT collimation width on EAN, RED, and SPR measured by DL-DECT was evaluated. In order to improve the accuracy of the measured EAN, RED, and SPR by DL-DECT, CT scanning should be performed using narrow collimation widths.

• Journal of IKEEE
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• v.23 no.3
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• pp.904-909
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• 2019

Using the ion-beam irradiated indium zinc oxide (IZO) films which was cured at $100^{\circ}C$, uniform LC and homogeneous alignment of liquid crystal (LC) molecules was achieved. The IZO film was deposited on the glass substrate at the curing temperature of $100^{\circ}C$ and irradiated by the ion-beam which is an LC alignment method. To verify the LC alignment characteristics, polarizing optical microscope and the crystal rotation method were used. Additionally, it was confirmed that the LC cell with the IZO films had an enough thermal budget for high-quality LC applications. Field emission scanning electron microscope was conducted as a surface analysis to evaluate the effect of the ion-beam irradiation on the IZO films. Through this, it was revealed that the ion-beam irradiation induced rough surface with anisotropic characteristics. Finally, electro-optical (EO) performances of the twisted-nematic cells with the IZO films were collected and it was confirmed that this cell had better EO performances than the conventional rubbed polyimide. Furthermore, the polar anchoring energy was measured and a suitable value for stable LC device operation was achieved.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1992-1993
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• 2007

Decay processes of accumulated charge in e-beam irradiated polymers during elevating temperature are observed using pulsed electro-acoustic measurement system. Since the polymeric materials have many superior properties such as light-weight, good mechanical strength, high flexibility and low cost, they are inevitable materials for spacecrafts. In space environment, however, the polymers sometimes have serious damage by irradiation of high energy charged particles. When the polymers of the spacecraft are irradiated by high energy charged particles, some of injected charges accumulate and remain for long time in the bulk of the polymers. Since the bulk charges sometimes cause the degradation or breakdown of the materials, the investigation of the charging and the decay processes in polymeric materials under change of temperature is important to decide an adequate material for the spacecrafts. By measuring the charge behavior in e-beam irradiated polymer, such as polyimide or polystyrene, it is found that the various accumulation and decay patterns are observed in each material. The results seem to be useful and be helpful to progress in the reliability of the polymers for the spacecraft.

• Journal of the Korean Vacuum Society
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• v.18 no.3
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• pp.186-196
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• 2009

Since it is difficult to extract a high flux ion beam directly at an energy of hyperthermal range ($1{\sim}100\;eV$), especially, lower than 50 eV, the ions should be neutralized into neutral particles and extracted as a neutral beam. A plasma source required to generate and efficiently transport high flux hyperthermal neutral beams should be easily scaled up and produce a high ion density (${\ge}10^{11}\;cm^{-3}$) even at a low working pressure (${\le}$ 0.3 mTorr). It is suggested that the required plasma source can be realized by Electron Cyclotron Resonance (ECR) plasmas with diverse magnetic field configurations of permanent magnets such as a planar ECR plasma source with magnetron field configuration and cylindrical one with axial magnetic fields produced by permanent magnet arrays around chamber wall. In both case of the ECR sources, the electron confinement is based on the simple mirror field structure and efficiently enhanced by electron drifts for producing the high density plasma even at the low pressure.

• Progress in Medical Physics
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• v.26 no.3
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• pp.178-184
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• 2015

The Markus ionization chamber(R) is a small plane parallel ionization chamber widely used in clinical electron beam dosimetry. Plane parallel chambers were recommended for low energy electron dosimetry with the beam quality at $R_{50}<4.0g/cm^2$ (${\bar{E}}{\approx}10MeV$) according to TRS-398 protocol. However, the quality correction factors ($k_{Q,Q_0}$) of the Markus chamber was not presented in TRS-398 protocol for electron beam quality at $R_{50}<2.0g/cm^2$ (${\bar{E}}{\approx}4MeV$). In this study, the $k_{Q,Q_0}$ factors of the Markus chambers (PTW-34045) for beam qualities at $R_{50}=1.0$, 1.4, 2.0, 2.5, 3.0, and $5.0g/cm^2$ were determined by Monte Carlo calculations (DOSRZnrc/EGSnrc) and the dosimetric formalism of quality correction factor. The derived $k_{Q,Q_0}$ values were evaluated using the produced data based on TRS-398 and TG-51 protocols and known values for the Markus chamber.

• Korean Journal of Materials Research
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• v.12 no.3
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• pp.195-199
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• 2002

Planar Hall effect of ferromagnetic GaMnAs thin films was investigated for the first time. The films were grown in an optimized growth condition via molecular beam epitaxy at low temperatures. For the optimization of the growth conditions, we used reflection high-energy electron diffraction, electrical conductivity, double crystal x-ray diffraction, and superconducting quantum interference device measurements techniques. We observed that the difference between the longitudinal resistance and the transverse resistance matches the planar Hall resistance. The ratio of the planar Hall resistance at saturation magnetic field to that at zero reached above 500%.

• Korean Journal of Materials Research
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• v.22 no.10
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• pp.539-544
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• 2012

We have grown AlN nanorods and AlN films using plasma-assisted molecular beam epitaxy by changing the Al source flux. Plasma-assisted molecular beam epitaxy of AlN was performed on c-plane $Al_2O_3$ substrates with different levels of aluminum (Al) flux but with the same nitrogen flux. Growth behavior of AlN was strongly affected by Al flux, as determined by in-situ reflection high energy electron diffraction. Prior to the growth, nitridation of the $Al_2O_3$ substrate was performed and a two-dimensionally grown AlN layer was formed by the nitridation process, in which the epitaxial relationship was determined to be [11-20]AlN//[10-10]$Al_2O_3$, and [10-10]AlN//[11-20]$Al_2O_3$. In the growth of AlN films after nitridation, vertically aligned nanorod-structured AlN was grown with a growth rate of $1.6{\mu}m/h$, in which the growth direction was <0001>, for low Al flux. However, with high Al flux, Al droplets with diameters of about $8{\mu}m$ were found, which implies an Al-rich growth environment. With moderate Al flux conditions, epitaxial AlN films were grown. Growth was maintained in two-dimensional or three-dimensional growth mode depending on the Al flux during the growth; however, final growth occurred in three-dimensional growth mode. A lowest root mean square roughness of 0.6 nm (for $2{\mu}m{\times}2{\mu}m$ area) was obtained, which indicates a very flat surface.