• Proceedings of the KIEE Conference
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• 1988.11a
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• pp.186-188
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• 1988

Relaxation spectra of the linear dielectric constants $\varepsilon=\varepsilon'-j{\varepsilon}"$ have been measured as functions of temperature and frequency for alternating copolymers of vinylidene cyanide (VDCN/VAc, VDCN/VPr, VDCN/VBz and VDCN/St) It is found that the linear dielectric constants e show characteristics of the temperature dependence that the real part have a large peak related to the glass transition point(Tg), and of the frequency dependence that the real port increases with decreasing frequency and the imaginary part increases largely in low frequency range. These phenomena mean Debye-type relaxation due to the micro-Brownian moi ions of non-crystalline seqments.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.605-608
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• 2006

The recent application of wide band gap oxide semiconductors to transparent thin film transistors (TTFTs) is making a fast and growing (r)evolution on the contemporary solid-state electronics. In this paper we present some of the recent results we have obtained using wide band gap oxide semiconductors, like indium zinc oxide, produced by rf sputtering at room temperature. The devices work in the enhancement mode and exhibit excellent saturation drain currents. On-off ratios above $10^6$ are achieved. The optical transmittance data in the visible range reveals average transmittance higher than 80 %, including the glass substrate. Channel mobilities are also quite respectable, with some devices presenting values around $25\;cm^2/Vs$, even without any annealing or other post deposition improvement processes. The high performances presented by these TTFTs associated to a high electron mobility, at least two orders of magnitude higher than that of conventional amorphous silicon TFTs and a low threshold voltage, opens new doors for applications in flexible, wearable, disposable portable electronics as well as battery-powered applications.

• Electrical & Electronic Materials
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• v.8 no.1
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• pp.21-26
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• 1995

Highly sensitive and mechanically stable gas sensors have been fabricated using the microfabrication and micromaching techniques. The sensing material used to detect the offensive trimethylarnine ((CH$_{3}$)$_{3}$N) gas is 6 wt% $Al_{2}$O$_{3}$-doped, 1000.angs.-thick ZnO deposited by r. f. magnetron sputtering. The optimum operating temperature of the sensor is 350.deg.C and the corresponding heater power is about 85mW. Excellent thermal insulation is achieved by the use of a double-layer structure of 0.2.mu.m -thick silicon nitride and 1.4.mu.m-thick phosphosilicate glass(PSG) prepared by low pressure chemical vapor deposition(LPCVD) and atmospheric pressure chemical vapor deposition(APCVD), respectively. The sensors are mechanically stable enough to endure at least 43, 200 heat cycles between room temperature and 350.deg. C.

• Proceedings of the Korean Society For Composite Materials Conference
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• 2004.10a
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• pp.175-179
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• 2004

Since the electromagnetic properties of fiber reinforced polymeric composites can be tailored effectively by adding small amount of electromagnetic powders to the matrix of composites, they are plausible materials for fabricating the radar absorbing structures (RAS) of desired performance. In order to design the effective electromagnetic wave (EM) absorber with the fiber reinforced polymeric composites, the electromagnetic characteristics with respect to the constituents of the composite should be available in the target frequency band. In order to describe the dielectric behavior of low loss unidirectional fiber reinforced composite, theoretical models and mixture equations for estimating its dielectric constant were proposed with respect to the fiber, matrix volume fractions and fiber orientations, and verified by the experiments. From the investigation, it was found that the suggested binary mixture rules agreed well with the experimental results.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2005.10a
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• pp.273-276
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• 2005

Packing characteristics of amorphous alloy particles were investigated by scanning electron microscopy, compositional analysis, micro-hardness test and finite element method (FEM). Electroless Ni-plating was made on the surface of the Cu-based amorphous particles before consolidation in ambient atmosphere at an intermediate region of glass transition and crystallization temperatures $(T_g\;and\;T_x)$. Some parts of the Ni-layer in the interfaces of the consolidated particles disappeared, while some of them still remained without appreciable change in compositions. No cracks or fractures were found in the particles, which may occur at low temperatures below or near $T_g$ as anticipated by the FEM analysis. Crystallization and change in hardness were not observed after consolidation.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.57-57
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• 2018

Zinc-oxide (ZnO), II-VI semiconductor with a wide and direct band gap (Eg: 3.2~3.4 eV), is one of the most potential candidates to substitute for ITO due to its excellent chemical, thermal stability, specific electrical and optoelectronic property. However, the electrical resistivity of un-doped ZnO is not low enough for the practical applications. Therefore, a number of doped ZnO films have been extensively studied for improving the electrical conductivities. In this study, Ti-doped ZnO films were successfully prepared by atomic layer deposition (ALD) techniques. ALD technique was adopted to careful control of Ti doping concentration in ZnO films and to show its feasible application for 3D nanostructured TCO layers. Here, the structural, optical and electrical properties of the Ti-doped ZnO depending on the Ti doping concentration were systematically presented. Also, we presented 3D nanostructured Ti-doped ZnO layer by combining ALD and nanotemplate processes.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.307-308
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• 2008

Zinc oxide is a direct band gap wurtzite-type semiconductor with band gap energy of 3.37eV at room temperature. the n-type doped ZnO oxides, B doped ZnO (BZO) is widely studied in TCOs materials as it shows good electrical, optical, and luminescent properties. we focused on the fabrication of B doped ZnO films with glass substrate using the LSMCD at low temperature. And Novel boron-doped ZnO thin films were deposited and characterized from the structural, optical, electrical point of view. The structure, morphology, and optical properties of the films were studied as a function of by employing the XRD, SEM, Hall system and micro Raman system.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.190-192
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• 2007

A neutral beam system has been developed to produce hyperthermal neutral beams composed of indium, tin, and oxygen atoms. Using these hyper thermal neutral beams with energies in the range of tens of eV, high quality indium-tin oxide (ITO) thin films have been obtained on glass substrates at room temperature. The optical transmittance of the films is higher than 85% at a wavelength of 550 nm and the electrical resistivity is lower than $1{\times}10^{-3}{\Omega}cm$.

• Journal of Surface Science and Engineering
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• v.52 no.6
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• pp.306-309
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• 2019

Titanium (Ti) doped indium oxide (In₂O₃) films were deposited on glass substrates by RF magnetron sputtering and the films were rapid thermal annealed at 100, 200, and 300℃, respectively to investigate the influence of the rapid annealing on the opto-electrical performance of the films. The grain size of In₂O₃ (222) plane increased with annealing temperatures and their electrical resistivity decreased to as low as 8.86×10^-4 Ωcm at 300℃. The visible transmittance also improved from 77.1 to 79.5% when the annealing temperature increased. The optical band gap of the TIO films shifted from 4.010 to 4.087 eV with increases in annealing temperature from room temperature to 300℃. The figure of merit shows that the TIO films annealed at 300℃ had better optical and electrical performance than the other films prepared using lower-temperature or no annealing.

• Electronics and Telecommunications Trends
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• v.34 no.5
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• pp.36-47
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• 2019

Smart window technology has become a major component of smart buildings, leading to energy savings and enhanced functionality. Smart windows work like curtains or blind screens, blocking external light sources. Smart window components employ electrochromic or photochromic materials that can selectively block sunlight when electricity is applied. The installation of low-E glass and building-integrated photovoltaics (BIPV) is being encouraged in accordance with the policy on saving building energy. To incorporate BIPV into smart windows, the transparency and colors of transparent photovoltaics must be optimized. The power sources required to operate these smart windows take advantage of the transparent color of the solar cells, which also facilitates aesthetics. Self-powered smart windows that combine electrochromic or photochromic screens with transparent solar cells suggest a promising convergent technology.