• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.69.2-69.2
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• 2012

Graphene films have a strong potential to replace indium tin oxide anodes in organic light-emitting diodes (OLEDs), to date. However, the luminous efficiency of OLEDs with graphene anodes has been limited by a lack of efficient methods to improve the low work function and reduce the sheet resistance of graphene films to the levels required for electrodes. Here, we fabricate flexible OLEDs by modifying the graphene anode to have a high work function and low sheet resistance, and thus achieve extremely high luminous power efficiencies (37.2 lm/W in fluorescent OLEDs, 102.7 lm/W in phosphorescent OLEDs), which are significantly higher than those of optimized devices with an indium tin oxide anode (24.1 lm/W in fluorescent OLEDs, 85.6 lm/W in phosphorescent OLEDs). We also fabricate flexible white OLED lighting devices using the graphene anode. These results demonstrate the great potential of graphene anodes for use in a wide variety of high-performance flexible organic optoelectronics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.159-159
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• 2008

Indium-tin oxides (ITO) films have been widely used as transparent electrodes for optoelectronic devices such as organic light emitting diodes (OLEDs), photovoltaics, touch screen devices, and flat-paneldisplay. In particular, to improve hole injection efficiency in OLEDs, transparent electrodes should have high work-function besides their transparency and low resistivity. Nevertheless, few studies have been made on engineering the work function of ITO for use as an efficient anode. In this study, the effects of a wide range of Nb or Zn doping rate on the changes in work functions of ITO anode were investigated. The Nb or Zn doped ITO films were fabricated on glass substrates using combinatorial sputtering system which yields a linear composition spread of Nb or Zn concentration in ITO films in a controlled manner by co-sputtering two targets of ITO and Nb2O5 or ITO and ZnO. We have also examined the resistivity, transmittance, and other structural properties of the Nb or Zn-doped ITO films. Furthermore, OLEDs employing Nb or Zn-doped ITO anodes were fabricated and the device performances were investigated concerned with the work function changes.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.377-377
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• 2011

Organic solar cells (OSCs) with low cost have been studied to apply on flexible substrate by solution process in low temperature [1]. In previous researches, conventional organic solar cell was composed of metal oxide anode, buffer layer such as PEDOT:PSS, photoactive layer, and metal cathode with low work function. In this structure, indium tin oxide (ITO) and Al was generally used as metal oxide anode and metal cathode, respectively. However, they showed poor reliability, because PEDOT:PSS was sensitive to moisture and air, and the low work function metal cathode was easily oxidized to air, resulting in decreased efficiency in half per day [2]. Inverted organic solar cells (IOSCs) using high work function metal and buffer layer replacing the PEDOT:PSS have focused as a solution in conventional organic solar cell. On the contrary to conventional OSCs, ZnO and TiO2 are required to be used as a buffer layer, since the ITO in IOSC is used as cathode to collect electrons and block holes. The ZnO is expected to be excellent electron transport layer (ETL), because the ZnO has the advantages of high electron mobility, stability in air, easy fabrication at room temperature, and UV absorption. In this study, the IOSCs based on poly [N-900-hepta-decanyl-2,7-carbazole-alt-5,5-(40,70-di-2-thienyl-20,10,30-benzothiadiazole)] (PCDTBT) : [6,6]-phenyl C71 butyric acid methyl ester (PC70BM) were fabricated with the ZnO electron-transport layer and MoO3 hole-transport layer. Thickness of the ZnO for electron-transport layer was controlled by rotation speed in spin-coating. The PCDTBT and PC70BM were mixed with a ratio of 1:2 as an active layer. As a result, the highest efficiency of 2.53% was achieved.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.1011-1013
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• 2007

We report the fabrication of a new inverted OLED devices having potential to be used for both AMOLED and lighting applications.

• Journal of Surface Science and Engineering
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• v.48 no.3
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• pp.121-125
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• 2015

We studied the blue fluorescent OLED with Mg:Ag, Al, Ni as anode materials. Blue fluorescent OLEDs were fabricated using Anode / $MoO_3$ (3 nm) / 2-TNATA (60 nm) / NPB (30 nm) / SH-1 : BD-2 (5 vol.%, 30 nm) / Bphen (40 nm) / Liq (1 nm) / Al (150 nm). Current density of OLED with Mg:Ag was not measured due to too low work function, and that of OLED with Al showed $45.2mA/cm^2$ at 12 V. Luminance and Current efficiency of OLED with Al showed $385.1cd/m^2$ and 0.9 cd/A. Current density of OLED with Ni of 8, 10, 12 nm thickness showed 10, 12.9, $37.2mA/cm^2$, respectively. Luminance and Current efficiency of OLED with Ni of 8, 10, 12 nm thickness showed 670.9, 991.2, $1,320cd/m^2$ and 6.7, 7.7, 3.6 cd/A, respectively. Transmittance of Al was 52.2% at 476 nm wavelength and that of Ni of 8, 10, 12 nm thickness was 79, 77, 74 %, respectively. In spite of best current density, OLED with Al showed the lowest luminance and current efficiency because of low work function and poor transmittance. When thickness of Ni was increased to 12nm, current efficiency was sharply lower owing to bad transmittance and unbalance of holes and electrons. Finally, OLED with Ni of 10 nm thicknes showed the highest current efficiency.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.401-402
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• 2007

The preparation and characteristics of ITO anode films grown using a linear facing target sputtering (FTS) technique for use in organic light emitting diodes (OLED) and flexible OLED is described. The electrical, optical, and work function of the ITO anode, which was prepared by linear FTS at room temperature, were comparable to those of commercial ITO anode films. In particular, linear FTS-grown ITO films shows very smooth surface without defects such as pin hole and cracks due to low substrate temperature. Furthermore OLED with the linear FTS-grown ITO anode film shows comparable electrical and optical properties to those of OLED with the commercial crystalline-ITO anode film. This suggested that linear FTS is promising thin film technology for preparing high quality anode film in OLEDs and flexible OLEDs.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.1049-1052
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• 2007

Extremely sharp and uniform Transfer Mold FEAs with thin film low work function TiN emitter material have been fabricated by controlling the thickness of the coated emitter materials to realize high efficient, high reliable and low-cost vacuum nanoelectronic devices..Their tip radii are 8.3-13.8 nm. Turn-on electric fields of the Ni FEAs and TiN-FEAs resulted in the low electric field values of $31.6\;V/{\mu}m$ and $44.2V/{\mu}m$,respectively, at the short emitter/anode distance: less than $30\;{\mu}m$, which are lower than those of conventional FE As such as Spindt type FEAs and carbon nan otube FEAs The Transfer Metal Mold fabrication method is one of the best methods of changing emit ter materials with sharp and uniform emit ter shapes.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.167-167
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• 2010

Indium tin oxide (ITO) has been widely used as transparent conductive oxides (TCOs) for transparent electrodes of various optoelectronic devices, such as liquid crystal displays (LCD) and organic light emitting diodes (OLED). However, indium has become increasingly expensive and rare because of its limited resources. In addition, ITO thin films have some problems for OLED and flexible displays, such as imperfect work function, chemical instability, and high deposition temperature. Therefore, multi-component TCO materials have been reported as anode materials. Among the various materials, IZTO thin films have been gained much attention as anode materials due to their high work function, good conductivity, high transparency and low deposition temperature. IZTO thin films with a thickness of 200nm were deposited on Corning glass substrate at different substrate temperature by pulsed DC magnetron sputtering with a sintered ceramic target of IZTO (In2O3 70 wt%, ZnO 15 wt%, SnO2 15 wt%). We investigated the electrical, optical, structural properties of IZTO thin films. As the substrate temperature is increased, the electrical properties of IZTO are improved. All IZTO thin films have good optical properties, which showed an average of transmittance over 80%. These IZTO thin films were used to fabricate organic light emitting diodes (OLEDs) as anode and the device performances studied. As a result, IZTO has utility value of TCO electrode although it reduced indium and we expect it is possible for the IZTO to apply to flexible display due to the low processing temperature.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1236_1237
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• 2009

Organic light emitting diode (OLED) is currently the focus of intense interest in the field of photonics. It is attractive for the in low-operating voltage, low power consumption, easy fabrication and low cost. A typical OLED consists of one or more organic layers sandwiched between a high work function anode, such as indium tin oxide (ITO), and a low work function cathode such as Ca, Mg:Ag, and Al. Tris-(8-hydroxy)quinolinealuminum ($Alq_3$) has taken a prominent position in the development of OLED due to its relative stability as an electron transporting and emitting material. We investigated an efficiency improvement of the OLED depending on thickness variation of $Alq_3$.

• Journal of the Korean Vacuum Society
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• v.21 no.1
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• pp.12-16
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• 2012

Although silver is used for T-OLED (Top emitting organic Light-Emitting Diode) as reflective anode, it is not an ideal material due to its low work function. Thus, we study the effect of annealing and atmospheric pressure plasma treatment on Ag film that increases its work function by forming the thin silver oxide layer on its surface. In this study, we deposited silver on glass substrate using RF sputtering. Then we treated the Ag samples annealing at $300^{\circ}C$ for 30 minutes in atmosphere or treating the atmospheric plasma treatment for 30, 60, 90, 120s, respectively. We measured the change of the mechanical properties and the potential value of surface with each one at a different treatment type and time. We used nano-indenter system and KPFM (Kelvin Probe Force Microscopy). KPFM method can be measured the change of surface potential. The nanoindenter results showed that the plasma treatment samples for 30s, 120s had very low elastic modulus, hardness and Weibull modulus. However, annealed sample and plasma treated samples for 60s and 90s had better mechanical properties. Therefore, plasma treatment increases the uniformity thin film and the surface potential that is very effective for the performace of T-OLED.