• Journal of the Korean Ceramic Society
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• v.41 no.6
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• pp.464-470
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• 2004

The electrical stability of ZPCCY-based varistors composing of ZnO-Pr$_{6}$O$_{11}$-CoO-C $r_2$ $O_3$- $Y_2$ $O_3$ ceramics were investigated in various DC accelerated aging stress with sintering times. Sintering time greatly affected electrical properties and stability. Sintering time decreased nonlinear exponent in the range of 51.2∼23.8 and increased leakage current in the range of 1.3∼5.6 ${\mu}$A. The varistor sintered for 1 h exhibited high nonlinearity, whereas relatively low stability. On the contrary, the varistor sintered for 3 h exhibited low nonlinearity, whereas relatively high stability. But the varistor sintered for 2 h exhibited not only good nonlinearity, with nonlinear exponent of 38.6 and leakage current of 3.6 ${\mu}$A but also high stability, in which the variation rates of varistor voltage, nonlinear exponent, leakage current, and dissipation factor are -0.80%, -1.81 %, +74.4%, and +0.88%, respectively.

• Electrical & Electronic Materials
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• v.9 no.8
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• pp.789-798
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• 1996

The double nitride layer Metal Nitride Oxide Semiconductor(MNOS) structures were fabricated by variating both gas ratio and nitride thickness, and by duplicating nitride deposited and one nitride layer MNOS structure to improve nonvolatile memory characteristics of MNOS structures by Low Pressure Chemical Vapor Deposition(LPCVD) method. The nonvolatile memory characteristics of write-in, erase, memory retention and degradation of Bias Temperature Stress(BTS) were investigated by the homemade automatic .DELTA. $V_{FB}$ measuring system. In the trap density double nitride layer structures were higher by 0.85*10$^{16}$ $m^{-2}$ than one nitride layer structure, and the AVFB with oxide field was linearly increased. However, one nitride layer structure was linearly increased and saturated above 9.07*10$^{8}$ V/m in oxide field. In the erase behavior, the hole injection from silicon instead of the trapped electron emission was observed, and also it was highly dependent upon the pulse amplitude and the pulse width. In the memory retentivity, double nitrite layer structures were superior to one nitride layer structure, and the decay rate of the trapped electron with increasing temperature was low. At increasing the number on BTS, the variance of AVFB of the double nitride layer structures was smaller than that of one nitride layer structure, and the trapped electron retention rate was high. In this paper, the double nitride layer structures were turned out to be useful in improving the nonvolatile memory characteristics.

• Transactions on Electrical and Electronic Materials
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• v.6 no.2
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• pp.73-77
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• 2005

In this study, we investigated response characteristics of liquid crystal display (LCD) with different operating mode of nematic liquid crystals (NLCs) such as 45 $^{circ} twisted nematic (TN), 67.3 $^{circ} TN and electrical controlled birefringence (ECB) on the rubbed polyimide (PI) surface with side chains. The pretilt angles generated on polyimide surfaces of the three kinds of LCD operating modes were about 12 $^{circ} that was higher than those of conventional TN-LCOs. Also, the Electro-optical (EO) performance of these LCOs showed stable condition. Low transmittance of the 45 $^{circ} TN and 67.3 $^{circ} TN cell on the rubbed PI surface were measured by using low cell gap d. The fast response time in ECB cell among the three kinds of LCD operating modes was achieved. Also, thermal ability of fast 90 $^{circ} TN-LCD was investigated. The threshold voltage and the response time of thermal stressed TN-LCOs showed the same performances on no thermal stressed TN-LCOs. There was little change of value in these TN cells. However, the transmittances of TN-LCOs on the rubbed PI surface decreased while increasing thermal stress time. Therefore, the thermal stability of TN-LCD was decreased by the high thermal stress for the long duration.

• Journal of the Korean Society for Heat Treatment
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• v.36 no.5
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• pp.311-317
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• 2023

An autofilter is a device that removes impurities contained in heavy fuel oil used in diesel engines of ships or power plants, and also automatically removes impurities accumulated in the filter through a reverse washing function. The reducer-integrated motor serves to rotate the filter at low speed to enable reverse automatic cleaning in the autofilter device. To achieve a low speed of 0.65 to 0.75 rpm in a reducer-integrated motor, a small motor that can operate at 97rpm at a rated voltage of 110 V and 112.5 rpm at 220 V is required. Additionally, a large gear ratio of 1/150 is required. To ensure the durability and reliability of these reducers, the strength of the gear must be evaluated at the design stage. In general, there is a limit to evaluating the stress and strain state according to the vibration characteristics acting on each gear in the driving state of the reducer through quasi-static analysis. Therefore, in this study, the operation characteristics of the auto filter's reducer-integrated motor were first analyzed using the rigid body dynamics analysis method. Then, this rigid body dynamics analysis model was extended to a flexible multibody dynamics analysis model to analyze the stress and strain states acting on each gear and evaluate the design feasibility of the gear.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.5
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• pp.362-369
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• 2001

The electrical properties of varistors consisting of Zn-Pr-Co-Cr-Er oxides were investigated in the Er$_2$O$_3$content range of 0.0 to 2.0 mol%. the varistors without Er$_2$O$_3$ exhibited a relatively low nonlinearity, which was 14.24 in the nonlinear exponent and 21.47 $\mu$A in the leakage current. However, the varistors with Er$_2$O$_3$ sintered at 1335$^{\circ}C$ for 1h exhibited very high nonlinear exponent of 70, in particular, reaching a maximum value of 78.05 in 2.0 mol% Er$_2$O$_3$, and those sintered at 1335$^{\circ}C$ for 2h exhibited the nonlinear exponent close to 50, in particular, reaching a maximum value of52.76 in 0.5 mol% Er$_2$O$_3$. The others except for 0.5 mol% Er$_2$O$_3$-added varistors exhibited very high instability resulting in a thermal runaway within a short time, even a weak DC stress. Increasing soaking time decreased the nonlinearity, but increased the stability. The varistors containing 0.5mol% Er$_2$O$_3$ sintered for 2h exhibited excellent stability, in which the variation rate of the varistor voltage and nonlinear exponent was -1.70% and -7.15%, respectively, under more severe DC stress such as (0.80 V$_{1mA}$/9$0^{\circ}C$/12h)+(0.85 V$_{1mA}$/115$^{\circ}C$/12h)+(0.90 V$_{1mA}$/12$0^{\circ}C$/12h)+(0.95 V$_{1mA}$/1$25^{\circ}C$/12h)+(0.95 V$_{1mA}$/15$0^{\circ}C$/12h).TEX>/12h).

• Korean Journal of Materials Research
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• v.32 no.11
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• pp.508-514
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• 2022

Piezoelectric composite films which are enabled by inorganic piezoelectric nanomaterials-embedded polymer, have attracted enormous attention as a sustainable power source for low powered electronics, because of their ease of fabrication and flexible nature. However, the absorption of applied stress by the soft polymeric matrices is a major issue that must be solved to expand the fields of piezoelectric composite applications. Herein, a flexible and porous piezoelectric composite (piezoelectric sponge) comprised of BaTiO₃ nanoparticles and polydimethylsiloxane was developed using template method to enhance the energy conversion efficiency by minimizing the stress that vanishes into the polymer matrix. In the porous structure, effective stress transfer can occur between the piezoelectric active materials in compression mode due to direct contact between the ceramic particles embedded in the pore-polymer interface. The piezoelectric sponge with 30 wt% of BaTiO₃ particles generated an open-circuit voltage of ~12 V and a short-circuit current of ~150 nA. A finite element method-based simulation was conducted to theoretically back up that the piezoelectric output performance was effectively improved by introducing the sponge structure. Furthermore, to demonstrate the feasibility of pressure detecting applications using the BaTiO₃ particles-embedded piezoelectric sponge, the composite was arranged in a 3 × 3 array and integrated into a single pressure sensor. The fabricated sensor array successfully detected the shape of the applied pressure. This work can provide a cost-effective, biocompatible, and structural strategy for realizing piezoelectric composite-based energy harvesters and self-powered sensors with improved energy conversion efficiency.

• Journal of Sensor Science and Technology
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• v.5 no.6
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• pp.51-59
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• 1996

A flow sensor has been fabricated by preparing thin film Pt-heater and Bi-Sb thermocouples array on 150 nm-$Si_{3}N_{4}$/300 nm-$SiO_{2}$/150 nm-$Si_{3}N_{4}$ dielectric diaphragm which has low thermal conductivity and balanced stress with silicon substrate for the purpose of improving the thermal isolation between heater and silicon substrate. Pt-heater showed nonlinear I-V characteristics due to the thermal isolation effect of the diaphragm. Its temperature coefficient of resistance was about $0.00378\;/^{\circ}C$ and Seebeck coefficient of Bi-Sb thermocouple was about $97\;{\mu}V/K$. The sensor showed that thermoelectric voltage decreased as thermal conductivity of gas increased, and flow sensitivity increased as heater voltage increased or as the distance between heater and thermocouple decreased. When heater voltage was about 2.5 V, $N_{2}$-flow sensitivity and thermal response time of the sensor were about $1.27\;mV{\cdot}(sccm)^{-1/2}$ and 0.13 sec., respectively.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.10 no.12
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• pp.3626-3631
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• 2009

This study has provided some of the first experimental results of NMOSFET hot-carrier degradation for the analog circuit application. After hot-carrier stress under the whole range of gate voltage, the degradation of NMOSFET characteristics is measured in saturation region. In addition to interface states, the evidences of hole and electron traps are found near drain depending on the biased gate voltage, which is believed to the cause for the variation of the transconductance($g_m$) and the output conductance($g_{ds}$). And it is found that hole trap is a dominant mechanism of device degradation in a low-gate voltage saturation region, The parameter degradation is sensitive to the channel length of devices. As the channel length is shortened, the influence of hole trap on the channel conductance is increased. Because the magnitude of $g_m$ and $g_{ds}$ are increased or decreased depending on analog operation conditions and analog device structures, careful transistor design including the level of the biased gate voltage and the channel length is therefore required for optimal voltage gain ($A_V=g_m/g_{ds}$) in analog circuit.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.05b
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• pp.190-195
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• 2000

The electrical properties and stability of ZPCE varistors consisted of $ZnO-Pr_6O_{11}-CoO-Er_2O_3$ ceramics were investigated. $ZnO-Pr_6O_{11}-CoO-Er_2O_3$ based ceramics were sintered at $1300^{\circ}C$ and $1350^{\circ}C$, respectively, without and with 0.5 mol% $Er_2O_3$. The varistors sintered at $1300^{\circ}C$ exhibited a better nonlinearity than that $1350^{\circ}C$. The varistors with $Er_2O_3$ of 0.5 mol% exhibited a high nonlinear exponent of 52.8. However, they easily degraded due to the low density below 85% of TD. On the other hand, the varistors sintered at $1350^{\circ}C$ without $Er_2O_3$ exhibited an extremely poor nonlinearity, but the varistors with $Er_2O_3$ of 0.5 mol% exhibited a relatively good nonlinearity, which the nonlinear exponent is 34.8 and the leakage current is $7.4\;{\mu}A$ Morever, they exhibited a very high stability, which the variation rate of varistor voltage, nonlinear exponent, and leakage current are -0.9%, -2.9%, and +2.7%, respectively, under the third stress $(0.80 V_{1mA}/90^{\circ}C/12h)$ + $(0.85 V_{1mA}/115^{\circ}C/12h)$ + $(0.90 V_{1mA}/120^{\circ}C/12h)$. Consequently, it was estimated that $ZnO-Pr_6O_{11}-CoO-Er_2O_3$ ceramics will be usefully applied to develop the advanced $Pr_6O_{11}$-based ZnO varistors.

• Transactions of the Korean Society for Noise and Vibration Engineering
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• v.24 no.3
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• pp.247-252
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• 2014

This paper presents a novel impact sensor which can be fabricated with smart paint made of grapheme. This smart nano paint can be easily installed on structures using a spray-on technique and that can make the sensor low cost and practical. The graphene effectively improves the piezoresistivity of the smart paint and that is available to achieve sensitive impact sensor with high gauge factor. The nano smart-paint can detect sufficient impact to cover the damaged energy range of the composite around 1~3J. The voltage outputs from the sprayed paints show fairly linear responses after signal processing. The impact makes deformation of the structure and it brings change of piezoresistivity of the paint and those converts into voltage output consequently by means of a simple signal processing system. The nano smart paint is lightweight and easily applied to the structural surface, and there is no stress concentration. The nano smart paint is expected to be a cost effective and sensitive multi-functional sensor for composites and other damage monitoring applications in the field of structural health monitoring.