• Journal of the Korean Society for Heat Treatment
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• v.10 no.4
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• pp.266-277
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• 1997

Near-threshold fatigue crack growth characteristics was investigated on the Ni-Cr-Mo-V low alloy steel, which has the different microstructure obtained by tempering at various temperature. The specimens were austenized at $950^{\circ}C$ and then followed by tempering at $200^{\circ}C$, $530^{\circ}C$ and $600^{\circ}C$. Strain rate was obtained from strain gauge attached on the crack tip and crack opening point was observed through load-strain curve. Threshold stress intensity range(${\Delta}K_{th}$) was increased with increasing tempering tempuerature, but the effective threshold stress intensity rage (${\Delta}K_{eff,\;th}$) was not affected with the increasing temperature. Grain size increased with increasing tempering temperature.

• 전기의세계
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• v.23 no.6
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• pp.49-55
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• 1974

Amorphous semiconductor from As 30 Te 48 Ge 10 Si 12 was prepared, and studied electron microscopy, X-ray analysis and resistivity measurement. It's resistivity is 1.56*10$^{6}$ .ohm.-cm when small ampule is used for preparing sample it is found that no phase separation has occurced by electron microscopy, and that phase transition temperature is 232.deg. C by differential Thermal Analysis. The specimen showed threshold switching that the low resistance state occur at critical electric field and the resistance recover at low applied field. Critical electric field of the switching is 10$^{5}$ V/cm at room temperature. Threshold voltage secreace exponentially with increasing ambient temperature and at that each voltage resistance of the switching device increase exponentially. According to the series resistance and applied vottage current slope on the V-I curve is varied. When applied voltage is decreased after switching, the resistance of the switching device is increased. By this result the origin of the switching is the Joule's heating.

• Journal of Ocean Engineering and Technology
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• v.16 no.5
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• pp.80-87
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• 2002

In this study, CT specimens were prepared from spring steel(SUP9) which was used in suspension of automobile for room temperature and low temperature service. We got the following characteristics from fatigue crack growth test carried out in the environment of room temperature and low temperature at $25^{\circ}C$, ­3$0^{\circ}C$, ­5$0^{\circ}C$, ­7$0^{\circ}C$ and ­10$0^{\circ}C$ in the range of stress ratio of 0.05 by means of opening mode displacement. The threshold stress intensity factor range ΔKth in the early stage of fatigue crack growth (Region I) and stress intensity factor range ΔK in the stable of fatigue crack growth (Region II) was decreased in proportion to descend temperature. It is assumed that the fatigue resistance characteristics and fracture strength at low temperature and high temperature is considerable higher than that of room temperature in the early stage and stable of fatigue crack growth region.

• Journal of Power System Engineering
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• v.4 no.1
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• pp.81-87
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• 2000

In this study, CT specimens were prepared from ASTM SA516 Gr. 70 which was used for pressure vessel plates for room and low temperature service. And we got the following characteristics from fatigue crack growth test carried out in the environment of room and low temperature at $25^{\circ}C,\;-60^{\circ}C,\;-80^{\circ}C\;and\;-100^{\circ}C$ and in the range of stress ratio of 0.05 by means of opening mode displacement. At the constant stress ratio, the threshold stress intensity factor range ${\Delta}K_{th}$ in the early stage of fatigue crack growth (Region I) and stress intensity factor range ${\Delta}K$ in the stable of fatigue crack growth (Region II) was increased in proportion to descend temperature. It assumed that the fatigue resistance characteristics and fracture strength at low temperature is considerable higher than that of room temperature in the early stage and stable of fatigue crack growth region. The straight line slope relation of logarithm $d{\alpha}/dN\;-{\Delta}K$ in Region II, that is, the fatigue crack growth exponent m increased with descending temperature at the constant stress ratio. It assumed that the fatigue crack growth rate $d{\alpha}/dN$ is rapid in proportion to descend temperature in Region II and the cryogenic-brittleness greatly affect a material with decreasing temperature.

• Proceedings of the KWS Conference
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• 2001.05a
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• pp.224-227
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• 2001

In this study, CT specimens were prepared hem ASTM SA516 which was used for pressure vessel plates for room and low temperature service. And we got the following characteristics from fatigue crack growth test carried out in the environment of room and low temperature at $25^{\circ}C$, -3$0^{\circ}C$, -6$0^{\circ}C$, -8$0^{\circ}C$, -l$0^{\circ}C$ and -l2$0^{\circ}C$ and in the range of stress ratio of 0.1, 0.3 by means of opening mode displacement. At the constant stress ratio, the threshold stress intensity factor range $\Delta K_{th}$ in the early stage of fatigue crack growth ( Region I ) and stress intensity factor range $\Delta$K in the stable of fatigue crack growth ( Region II) was increased in proportion to descend temperature. It assumed that the fatigue resistance characteristics and fracture strength at low temperature is considerable higher than that of room temperature in the early stage and stable of fatigue crack growth region. The straight line slope relation of logarithm da/dN - $\Delta$K in Region II, that is, the fatigue crack growth exponent m increased with descending temperature at the constant stress ratio. It assumed that the fatigue crack growth rate da/dN is rapid in proportion to descend temperature in Region H and the cryogenic-brittleness greatly affect a material with decreasing temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.6
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• pp.433-439
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• 2011

Poly Si TFTs (poly silicon thin film transistors) with p channel those are annealed HT (high temperature) with gate poly crystalline silicon and LT (low temperature) with metal gate electrode were fabricated on quartz substrate using the analyzed data and compared according to the activated grade silicon thin films and the size of device channel. The electrical characteristics of HT poly-Si TFTs increased those are the on current, electron mobility and decrease threshold voltage by the quality of particles of active thin films annealed at high temperature. But the on/off current ratio reduced by increase of the off current depend on the hot carrier applied to high gate voltage. Even though the size of the particles annealed at low temperature are bigger than HT poly-Si TFTs due to defect in the activated grade poly crystal silicon and the grain boundary, the characteristics of LT poly-Si TFTs were investigated deterioration phenomena those are decrease the electric off current, electron mobility and increase threshold voltage. The results of transconductance show that slope depend on the quality of particles and the amplitude depend on the size of the active silicon particles.

• Journal of IKEEE
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• v.15 no.2
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• pp.143-148
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• 2011

MOS (Metal-Oxide Semconductor) devices among the most sensistive of all semiconductors to radiation, in particular ionizing radiation, showing much change even after a relatively low dose. The necessity of a radiation dosimeter robust enough for the working environment has increased in the fields of aerospace, radio-therapy, atomic power plant facilities, and other places where radiation exists. The power MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) has been tested for use as a gamma radiation dosimeter by measuring the variation of threshold voltage based on the quantity of dose, and a maximum total dose of 30 krad exposed to a $^{60}Co$ ${\gamma}$-radiation source, which is sensitive to environment parameters such as temperature. The gate oxide structures give the main influence on the changes in the electrical characteristics affected by irradiation. The variation of threshold voltage on the operating temperature has caused errors, and needs calibration. These effects can be overcome by adjusting gate oxide thickness and implanting impurity at the surface of well region in MOSFET.

• Journal of the Korean association of regional geographers
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• v.22 no.1
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• pp.195-210
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• 2016

The purpose of this study was to understand characteristics of groups vulnerable to extreme heat and to reduce mortality caused by high temperature. For this purpose, relationship between socioeconomic factors and mortality-threshold temperatures were studied. The study area was limited to Seoul (South Korea) and climate data from 2000 to 2010 was used. Our results indicate that mortality-threshold temperatures for regions with a high proportion of aging population and a low proportion of aging population are $27.6^{\circ}C$ and $27.9^{\circ}C$, respectively. It was also found that a relative size of welfare dependant population did not affect mortality-threshold temperatures. However, regions with a high proportion of aging and welfare dependant population experienced $0.7^{\circ}C$ lower mortality-threshold temperature than other regions. This implies that low income and older people in Seoul are more easily affected by high temperature. Thus, this study suggests that it needs a policy targeted to low income and aging population to decrease mortality rate caused by extreme heat.

• Transactions of the Korean Society of Automotive Engineers
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• v.12 no.1
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• pp.83-90
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• 2004

In this study, CT specimens were prepared from spring steel(SUP9) processed shot peening which was room temperature and low temperature experiment. And we got the following characteristics from fatigue crack growth test carried out in the environment of room temperature and low temperature at $25^{\circ}C$, $-30^{\circ}C$, $-50^{\circ}C$, $-70^{\circ}C$,$-100^{\circ}C$, and $-150^{\circ}C$, in the range of stress ratio of 0.05 by means of opening mode displacement. The threshold stress intensity factor range ΔKth in the early stage of fatigue crack growth (Region I)was increased but stress intensity factor range ΔK in the stable of fatigue crack growth (Region II) was decreased in proportion to decrease temperature. It is assumed that the fatigue resistance characteristics and fracture strength at low temperature and high temperature is considerably higher than that of room temperature in the early stage and stable of fatigue crack growth region.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.6
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• pp.75-81
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• 1995

InGaAsP/InP uncooled LDs emitting at 1.3$\mu$m wavelength are of interest for several application of fiber-to-the-home, optical interconnection, long-haul high-bit-rate optical transmission systems, etc. The strain compensated PBH-MQW-LD employing 1.4% compressive strained well (${\lambda}=1.3{\mu}m$) and 0.7% tensile strained barrier (${\lambda}=1.12{\mu}m$) layers grown by low pressure metallicorganic vapor phase epitaxy was found to be low threshold current and stable temperature characteristics. The average threshold current of 5.6mA and average slope efficiency of 0.27mW/mA at room temperature were obtained for uncoated uncooled-LD.