• Atmosphere
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• v.27 no.2
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• pp.119-131
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• 2017

We present and discuss the Tropopause Folding Turbulence Detection (TFTD) algorithm for the Korean Communication, Ocean, Meteorological Satellite (COMS) which is originally developed for the Tropopause Folding Turbulence Product (TFTP) from the Geostationary Operational Environmental Satellite (GOES)-R. The TFTD algorithm assumes that the tropopause folding is linked to the Clear Air Turbulence (CAT), and thereby the tropopause folding areas are detected from the rapid spatial gradients of the upper tropospheric specific humidity. The Layer Averaged Specific Humidity (LASH) is used to represent the upper tropospheric specific humidity calculated using COMS $6.7{\mu}m$ water vapor channel and ERA-interim reanalysis temperature at 300, 400, and 500 hPa. The comparison of LASH with the numerical model specific humidity shows a strong negative correlation of 80% or more. We apply the single threshold, which is determined from sensitivity analysis, for cloud-clearing to overcome strong gradient of LASH at the edge of clouds. The tropopause break lines are detected from the location of strong LASH-gradient using the Canny edge detection based on the image processing technique. The tropopause folding area is defined by expanding the break lines by 2-degree positive gradient direction. The validations of COMS TFTD is performed with Pilot Reports (PIREPs) filtered out Convective Induced Turbulence (CIT) from Dec 2013 to Nov 2014 over the South Korea. The score test shows 0.49 PODy (Probability of Detection 'Yes') and 0.64 PODn (Probability of Detection 'No'). Low POD results from various kinds of CAT reported from PIREPs and the characteristics of high sensitivity in edge detection algorithm.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.8
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• pp.17-23
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• 2002

The SrS:CuCl TFEL devices were fabricated by electron-beam deposition and the luminescent characteristics of the fabricated SrS:CuCl TFEL devices were studied. The SrS powder was used as the host materials and 0.05 ~ 0.6 at% of CuCl powder was added as the luminescent center. The deposition conditions of substrate temperature, electron beam current, and deposition rate were 500 $^{\circ}C$ , 20 ~ 40 mA, and 5 ~ 10 /sec, respectively The total thickness of the phosphor layer deposited was 6000 . The blue emission at low CuCl concentrations was observed from the luminescent centers of monomer, dimer, trimer, and tetramer, The bright greenish blue emission at high CuCl concentrations was observed from the dimer and trimer luminescent centers. The maxium luminance was observed from the SrS:CuCl TFEL devices doped with 0.2 at% of CuCl concentration and the threshold voltage, luminance(L$_{40}$ ), efficiency(η$_{20}$) and CIE coordinate obtained were 55 V, 728 cd/$m^2$, 0.49 lm/w, and (0.21, 0.33), respectively..

• Korean Journal of Materials Research
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• v.19 no.1
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• pp.33-36
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• 2009

Inorganic-organic composite thin-film-transistors (TFTs) of ZnO nanowire/Poly(3-hexylthiophene) (P3HT) were investigated by changing the nanowire densities inside the composites. Crystalline ZnO nanowires were synthesized via an aqueous solution method at a low temperature, and the nanowire densities inside the composites were controlled by changing the ultrasonifiaction time. The channel layers were prepared with composites by spin-coating at 2000 rpm, which was followed by annealing in a vacuum at $100^{\circ}C$ for 10 hours. Au/inorganic-organic composite layer/$SiO_2$ structures were fabricated and the mobility, $I_{on}/I_{off}$ ratio, and threshold voltage were then measured to analyze the electrical characteristics of the channel layer. Compared with a P3HT TFT, the electrical properties of TFT were found to be improved after increasing the nanowire density inside the composites. The mobility of the P3HT TFT was approximately $10^{-4}cm^2/V{\cdot}s$. However, the mobility of the ZnO nanowire/P3HT composite TFT was increased by two orders compared to that of the P3HT TFT. In terms of the $I_{on}/I_{off}$ ratio, the composite device showed a two-fold increase compared to that of the P3HT TFT.

• Journal of the Semiconductor & Display Technology
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• v.16 no.2
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• pp.94-97
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• 2017

Amorphous Si has been used for data processing circuits in flat panel displays. However, low mobility of the amorphous Si is a limiting factor for the data transmission speed. Metal oxides such as ZnO have been studied to replace the amorphous Si. ZnO is a wide bandgap (3.3 eV) semiconductor with high mobility and good optical transparency. When ZnO is grown by sputtering with $O_2$ as an oxidizer, there can be many ion species arising from $O_2$ decomposition. $O^+$, $O_2{^+}$, and $O^-$ ions are expected to be the most abundant species, and it is not clear which one contributes to the ZnO growth. We applied alternating substrate voltage (0 V and -70 V) during sputtering growth. We studied changes in transistor characteristics induced by the voltage switching. We also compared ZnO grown by dc and rf sputtering. ZnO film was grown at $450^{\circ}C$ substrate temperature. ZnO thin-film transistor grown with these methods showed $7.5cm^2/Vsec$ mobility, $10^6$ on-off ratio, and -2 V threshold voltage.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.6
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• pp.588-593
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• 2023

The advantage of OTFT technology is that large-area circuits can be manufactured on flexible substrates using a low-cost solution process such as inkjet printing. Compared to silicon-based inorganic semiconductor processes, the process temperature is lower and the process time is shorter, so it can be widely applied to fields that do not require high electron mobility. Materials that have utility as electrode materials include carbon that can be solution-processed, transparent carbon thin films, and metallic nanoparticles, etc. are being studied. Recently, a technology has been developed to facilitate charge injection by coating the surface of the Al electrode with solution-processable titanium oxide (TiOx), which can greatly improve the performance of OTFT. In order to commercialize OTFT technology, an appropriate method is to use a complementary circuit with excellent reliability and stability. For this, insulators and channel semiconductors using organic materials must have stability in the air. In this study, carbon-doped Mo (MoC) thin films were fabricated with different graphite target power densities via unbalanced magnetron sputtering (UBM). The influence of graphite target power density on the structural, surface area, physical, and electrical properties of MoC films was investigated. MoC thin films deposited by the unbalanced magnetron sputtering method exhibited a smooth and uniform surface. However, as the graphite target power density increased, the rms surface roughness of the MoC film increased, and the hardness and elastic modulus of the MoC thin film increased. Additionally, as the graphite target power density increased, the resistivity value of the MoC film increased. In the performance of an organic thin film transistor using a MoC gate electrode, the carrier mobility, threshold voltage, and drain current on/off ratio (I_on/I_off) showed 0.15 cm²/V·s, -5.6 V, and 7.5×10⁴, respectively.

• Journal of Powder Materials
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• v.30 no.5
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• pp.431-435
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• 2023

An irradiation hardening of Inconel 718 produced by selective laser melting (SLM) was studied based on the microstructural observation and mechanical behavior. Ion irradiation for emulating neutron irradiation has been proposed owing to advantages such as low radiation emission and short experimental periods. To prevent softening caused by the dissolution of γ' and γ" precipitates due to irradiation, only solution annealing (SA) was performed. SLM SA Inconel 718 specimen was ion irradiated to demonstrate the difference in microstructure and mechanical properties between the irradiated and non-irradiated specimens. After exposing specimens to Fe³⁺ ions irradiation up to 100 dpa (displacement per atom) at an ambient temperature, the hardness of irradiated specimens was measured by nano-indentation as a function of depth. The depth distribution profile of Fe³⁺ and dpa were calculated by the Monte Carlo SRIM (Stopping and Range of Ions in Matter)-2013 code under the assumption of the displacement threshold energy of 40 eV. A transmission electron microscope was utilized to observe the formation of irradiation defects such as dislocation loops. This study reveals that the Frank partial dislocation loops induce irradiation hardening of SLM SA Inconel 718 specimens.

• Journal of Korean Society of Occupational and Environmental Hygiene
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• v.6 no.1
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• pp.97-108
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• 1996

A new type of passive samplers were designed and produced by authors. After evaluating the quality of activated carbon by measuring recovery rate of organic vapors and steadiness of sampling rate, activated carbon with 30 - 35 mesh produced by Company S in Korea was selected. In each passive sampler, an amount of 400 mg of the activated carbon was filled in 25-mm cassette and covered by fixed screen (or wire screen with 100 mesh). In addition to the fixed screen, a wind screen (or wire screen with 300 mesh) was also attached at outer face. The sampling rate of the new Korean passive samplers was estimated Conclusions obtained in the study are as follows. 1. Sampling rates of the newly developed Korean passive samplers were affected by sampling time. For n-hexane, sampling rates of 15- and 60-minute samples were 70.92 and 37.45 ml/min, respectively. Sampling rate of both 200- and 450-minute samples was 25.96 ml/min. It is concluded that, when passive samplers are used for measuring organic vapors, samples be collected longer than 60 minutes. 2. Sampling rate of the passive samplers was also affected by airborne concentration of organic vapors. Lower sampling rates were determined at level of 1/2 threshold limit values (TLVs) recommended by the American Conference of Governmental Industrial Hygienists (ACGIH). It is recommended that sampling rate of the passive samplers be obtained at site by measuring concentrations using both the NIOSH Method and passive samplers simultaneously. 3. When the passive samplers, which collected organic vapors, were exposed to clean air for five hours, there was no significant loss of organic vapors due to reverse diffusion. 4. When samples were stored at room temperature ($21.8{\pm}0.7^{\circ}C$) and refrigerator ($3.8{\pm}0.7^{\circ}C$), there was no significant difference in the accuracy of results. For trichloroethylene and n-hexane, accuracies were within 25 % at both temperatures until seven days. However, poor accuracy exceeding 25 % was indicated in toluene from the first day. It is recommended that samples be stored at freezing temperature below $0^{\circ}C$. 5. Sampling efficiency was significantly affected by direction of the passive samplers. Results of samplers facing wind and down, respectively, were compared. Lower amount of organic vapors were collected when the sampler was oriented down. It is recommended that, when air velocity is low in plants, the passive samplers be oriented to the wind. However, when air velocity is high, the passive samplers be oriented down.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.170-170
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• 2010

Thin-film transistors (TFT) have become the key components of electronic and optoelectronic devices. Most conventional thin-film field-effect transistors in display applications use an amorphous or polycrystal Si:H layer as the channel. This silicon layers are opaque in the visible range and severely restrict the amount of light detected by the observer due to its bandgap energy smaller than the visible light. Therefore, Si:H TFT devices reduce the efficiency of light transmittance and brightness. One method to increase the efficiency is to use the transparent oxides for the channel, electrode, and gate insulator. The development of transparent oxides for the components of thin-film field-effect transistors and the room-temperature fabrication with low voltage operations of the devices can offer the flexibility in designing the devices and contribute to the progress of next generation display technologies based on transparent displays and flexible displays. In this thesis, I report on the dc performance of transparent thin-film transistors using amorphous indium tin zinc oxides for an active layer. $SiO_2$ was employed as the gate dielectric oxide. The amorphous indium tin zinc oxides were deposited by RF magnetron sputtering. The carrier concentration of amorphous indium tin zinc oxides was controlled by oxygen pressure in the sputtering ambient. Devices are realized that display a threshold voltage of 4.17V and an on/off ration of ${\sim}10^9$ operated as an n-type enhancement mode with saturation mobility with $15.8\;cm^2/Vs$. In conclusion, the fabrication and characterization of thin-film transistors using amorphous indium tin zinc oxides for an active layer were reported. The devices were fabricated at room temperature by RF magnetron sputtering. The operation of the devices was an n-type enhancement mode with good saturation characteristics.

• Korean Journal of Agricultural and Forest Meteorology
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• v.10 no.4
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• pp.121-131
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• 2008

This study was conducted to delineate temporal and spatial patterns of potential risk of cold injury by combining the short-term cold hardiness of Campbell Early grapevine and the IPCC projected climate winter season minimum temperature at a landscape scale. Gridded data sets of daily maximum and minimum temperature with a 270m cell spacing ("High Definition Digital Temperature Map", HD-DTM) were prepared for the current climatological normal year (1971-2000) based on observations at the 56 Korea Meteorological Administration (KMA) stations using a geospatial interpolation scheme for correcting land surface effects (e.g., land use, topography, and elevation). The same procedure was applied to the official temperature projection dataset covering South Korea (under the auspices of the IPCC-SRES A2 and A1B scenarios) for 2071-2100. The dormancy depth model was run with the gridded datasets to estimate the geographical pattern of any changes in the short-term cold hardiness of Campbell Early across South Korea for the current and future normal years (1971-2000 and 2071-2100). We combined this result with the projected mean annual minimum temperature for each period to obtain the potential risk of cold injury. Results showed that both the land areas with the normal cold-hardiness (-150 and below for dormancy depth) and those with the sub-threshold temperature for freezing damage ($-15^{\circ}C$ and below) will decrease in 2071-2100, reducing the freezing risk. Although more land area will encounter less risk in the future, the land area with higher risk (>70%) will expand from 14% at the current normal year to 23 (A1B) ${\sim}5%$ (A2) in the future. Our method can be applied to other deciduous fruit trees for delineating geographical shift of cold-hardiness zone under the projected climate change in the future, thereby providing valuable information for adaptation strategy in fruit industry.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.5-5
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• 2009

Thin-film-transistors (TFTs) that can be prepared at low temperatures have attracted much attention because of the great potential for transparent and flexible electronics. One of the mainstreams in this field is the use of organic semiconductors such as pentacene. But device performance of the organic TFTs is still limited due to low field-effect mobility and rapid degradation after exposing to air. Alternative approach is the use of amorphous oxide semiconductors as a channel. Amorphous oxide semiconductors (AOSs) based TFTs showed the fast technological development, because AOS films can be fabricated at room temperature and exhibit the possibility in application like flexible display, electronic paper, and larges solar cells. Among the various AOSs, a-IGZO has lots of advantages because it has high channel mobility, uniform surface roughness and good transparency. [1] The high mobility is attributed to the overlap of spherical s-orbital of the heavy post-transition metal cations. This study demonstrated the effect of the variation in channel thickness from 30nm to 200nm on the TFT device performance. When the thickness was increased, turn-on voltage and subthreshold swing was decreased. The a-IGZO channels and source/drain metals were deposited with shadow mask. The a-IGZO channel layer was deposited on $SiO_2$/p-Si substrates by RF magnetron sputtering, where RF power is 150W. And working pressure is 3m Torr, at $O_2/Ar$ (2/28 sccm) atmosphere. The electrodes were formed with electron-beam evaporated Ti (30 nm) and Au (70 nm) bilayer. Finally, Al (150nm) as a gate metal was thermal-evaporated. TFT devices were heat-treated in a furnace at 250 $^{\circ}C$ and nitrogen atmosphere for 1hour. The electrical properties of the TFTs were measured using a probe-station. The TFT with channel thickness of 150nm exhibits a good subthreshold swing (SS) of 0.72 V/decade and on-off ratio of $1{\times}10^8$. The field effect mobility and threshold voltage were evaluated as 7.2 and 8 V, respectively.