• 한국신재생에너지학회:학술대회논문집
• /
• 2006.06a
• /
• pp.51-54
• /
• 2006

Cathode material, $(Ba_{0.5}Sr_{0.5})_{0.99}Co_{0.8}Fe_{0.2}O_{3-{\delta}}$, for low temperature SOFC was prepared by the glycine-nitrate synthesis process (GNP). The characteristics of the synthesized powders were studied with controlling pH of a precursor. The synthesis BSCF powders with pH were agglomeration state and calcinations temperature has not influence on particles. Highly acidicprecursor solution increased a single phase forming the temperature. Also, synthesis BSCF powder was show result for thermal analysis and alteration of difference crystal with pH. It is considered that Ba and Sr cannot complex by carboxylic acid group of glycine, because under highly acidic condition the caboxylic group mainly combined with $H^+$ insead of alkali and alkaline earth cations. In case of using precursor solution with pH $2{\sim}3$, a single perovskite phase was obtained at $1000^{\circ}C$. Polarization resistance of $(Ba_{0.5}Sr_{0.5})_{0.99}Co_{0.8}Fe_{0.2}O_{3-{\delta}}$ was measured by AC impedance spectroscopy from the two electrode symmetric cell. Area specific resistance of the $(Ba_{0.5}Sr_{0.5})_{0.99}Co_{0.8}Fe_{0.2}O_{3-{\delta}}$ air electrode at $500^{\circ}C\;and\;600^{\circ}C$ were $0.96{\Omega}?cm^2$ and $0.16{\Omega}?cm^2$, respectively.

• 한국신재생에너지학회:학술대회논문집
• /
• 2009.06a
• /
• pp.861-862
• /
• 2009

Precipitated iron-based catalysts are highly promising for the Fischer-Tropsch synthesis (FTS), in particular for the low temperature FTS below $280^{\circ}C$, because of their high activity and low cost. $SiO_2$ is an essential promoter for the precipitated iron-based catalysts to improve the attrition strength and physical stability. In this study, we carried out FTS over precipitated iron-based catalysts with and without $SiO_2$ in a fixed-bed reactor. The catalysts were prepared by a conventional co-precipitation method. In case of the catalysts with $SiO_2$, we used two comparative preparation methods, i.e., incorporation of $SiO_2$ before precipitation (denoted as precipitated $SiO_2$) and after precipitation (denoted as binder $SiO_2$), respectively. The addition of $SiO_2$ crucially affects both physico-chemical properties and catalytic peformance of precipitated iron-based catalysts.

• Journal of the Korean Ceramic Society
• /
• v.44 no.11
• /
• pp.597-606
• /
• 2007

With the advent of ubiquitous age, the high quality dielectric materials have been required for the wireless communications available to the millimeterwave as well as microwave frequencies. The utilizable region for the frequency has been expanding to the millimeter-wave region because of the shortage of radio frequency (RF) resources. These high frequencies would be expected for ultra high speed LAN, ETS and car anti-collision system on the intelligent transport system (ITS) and so on. Silicates are good candidates for microwave/millimeterwave dielectrics, because of their low dielectric constant ${\epsilon}_r$ and high quality factor (High Q). Forsterite ($Mg_2SiO_4$) is one of the silicates with low ${\epsilon}_r$ of 6.8 and Q f of 240000 GHz. In this paper, we reviewed following three categories for synthesis of forsterite: (1) Synthesis of high Q forsterite (2) Adjust the temperature coefficient of resonant frequency $TC_f$ (3) Diffusion of $SiO_{4^-}$ and Mg-ions on the formation of forsterite.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.135.1-135.1
• /
• 2014

Silicon nanoparticles can be synthesized in a standard radio-frequency glow discharge system at low temperature (${\sim}200^{\circ}C$). Plasma synthesis of silicon nanoparticles, initially a side effect of powder formation, has become over the years an exciting field of research which has opened the way to new opportunities in the field of materials deposition and their application to optoelectronic devices. Hydrogenated polymorphous silicon (pm-Si:H) has a peculiar microstructure, namely a small volume fraction of plasma synthesized silicon nanoparticles embedded in an amorphous matrix, which originates from the unique deposition mechanism. Detailed discussion on plasma synthesis of silicon nanoparticles, growth mechanism and photovoltaic application of pm-Si:H will be presented.

• Journal of Powder Materials
• /
• v.6 no.1
• /
• pp.75-80
• /
• 1999

The formation of $n-TiO_2$ powder by oxidation of Ti-ethoxied vapor in a flat flame burner reactor maintained under 20 torr has been studied. The produced powder were characterized in terms of crystal structure, chemical composition by XRD and TEM. The results showed that the powder consisted of loose agglomerated anatase and rutile particles and their size were about 10 nm and 20 nm, respectively. In the course of synthesis, changes of the flame color were happened to each condition during heating up the bubbler. The flame color transition phenomena reveled that a critical precursor delivery rate was needed for the powder formation (obtainable powder yield). The critical precursor delivery rate was estimated by a simple function of the bubbler temperature and the carrier gas flow rate. The critical precursor delivery rate was reviewed as an important variable of the nanopowder synthesis.

• Korean Journal of Materials Research
• /
• v.18 no.3
• /
• pp.153-158
• /
• 2008

Fe-aluminides have the potential to replace many types of stainless steels that are currently used in structural applications. Once commercialized, it is expected that they will be twice as strong as stainless steels with higher corrosion resistance at high temperatures, while their average production cost will be approximately 10% of that of stainless steels. Self-propagating, high-temperature Synthesis (SHS) has been used to produce intermetallic and ceramic compounds from reactions between elemental constituents. The driving force for the SHS is the high thermodynamic stability during the formation of the intermetallic compound. Therefore, the advantages of the SHS method include a higher purity of the products, low energy requirements and the relative simplicity of the process. In this work, a Fe-aluminide intermetallic compound was formed from high-purity elemental Fe and Al foils via a SHS reaction in a hot press. The formation of iron aluminides at the interface between the Fe and Al foil was observed to be controlled by the temperature, pressure and heating rate. Particularly, the heating rate plays the most important role in the formation of the intermetallic compound during the SHS reaction. According to a DSC analysis, a SHS reaction appeared at two different temperatures below and above the metaling point of Al. It was also observed that the SHS reaction temperatures increased as the heating rate increased. A fully dense, well-bonded intermetallic composite sheet with a thickness of $700\;{\mu}m$ was formed by a heat treatment at $665^{\circ}C$ for 15 hours after a SHS reaction of alternatively layered 10 Fe and 9 Al foils. The phases and microstructures of the intermetallic composite sheets were confirmed by EPMA and XRD analyses.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2015.08a
• /
• pp.136.1-136.1
• /
• 2015

In the present study, UHF (320 MHz) in combination with RF (13.56 MHz) plasmas was used for the synthesis of hydrogenated silicon nitride (SiNx:H) films by PECVD process at low temperature. RF/UHF hybrid plasmas were maintained at a fixed pressure of 410 mTorr in the N2/SiH4 and N2/SiH4/NH3 atmospheres. To investigate the radical generation and plasma formation and their control for the growth of the film, plasma diagnostic tools like vacuum ultraviolet absorption spectroscopy (VUVAS), optical emission spectroscopy (OES), and RF compensated Langmuir probe (LP) were utilized. Utilization of RF/UHF hybrid plasmas enables very high plasma densities ~ 1011 cm-3 with low electron temperature. Measurements using VUVAS reveal the UHF source is quite effective in the dissociation of the N2 gas to generate more active atomic N. It results in the enhancement of the Si-N bond concentration in the film. Consequently, the deposition rate has been significantly improved up to 2nm/s for the high rate synthesis of highly transparent (up to 90 %) SiNx:H film. The films properties such as optical transmittance and chemical composition are investigated using different analysis tools.

• 한국신재생에너지학회:학술대회논문집
• /
• 2010.06a
• /
• pp.51.3-51.3
• /
• 2010

Due to the recent public awareness of global warming and sustainable economic growth, there has been a growing interest in alternative clean energy sources. Hydrogen is considered as a clean fuel for the next generation. One of the technical challenges related to the use of hydrogen is safe monitoring of the hydrogen leak during separation, purification and transportation. For detecting various gases, chemiresistor-type gas sensors have been widely studied and used due to their well-established detection scheme and low cost. However, it is known that many of them have the limited sensitivity and slow response time, when used at low temperature conditions. In our work, a sensor based on Schottky barriers at the electrode/sensing material interface showed promising results that can be utilized for developing fast and highly sensitive gas sensors. Our hydrogen sensor was designed and fabricated based on indium oxide (In2O3)-doped tin oxide (SnO2) semiconductor nanoparticles with platinum (Pt) nanoclusters in combination with interdigitated electrodes. The sensor showed the sensitivity as high as $10^7%$ (Rair/Rgas) and the detection limit as low as 30 ppm. The sensor characteristics could be obtained via optimized materials synthesis route and sensor electrode design. Not only the contribution of electrical resistance from the film itself but also the interfacial effect was identified as an important factor that contribute significantly to the overall sensor characteristics. This promises the applicability of the developed sensor for monitoring hydrogen leak at room temperature.

• Journal of Electrochemical Science and Technology
• /
• v.9 no.2
• /
• pp.118-125
• /
• 2018

Herein we report on the selective synthesis and direct growth of nanostructures using an aqueous chemical growth route. Specifically, Al-doped ZnO (AZO) nanoflakes (NFs) are vertically grown on indium tin oxide (ITO) coated flexible polyethylene terephthalate (PET) sheets at low temperature and ambient environment. The morphological, optical, and electrical properties of the NFs are investigated as a function of the Al content. Furthermore, these AZO-NFs are integrated into perovskite solar devices as the electron transport layer (ETL) and the fabricated devices are tested for photovoltaic performance. It was determined that the doping of AZO-NFs significantly increases the performance metrics of the solar cells, mainly by increasing the short-circuit current of the devices. The observed enhancement is primarily attributed to the improved conductivity of the doped AZO-NF, which facilitates charge separation and reduces recombination. Further, our flexible solar cells fabricated through this low temperature process demonstrate an acceptable reproducibility and stability when exposed to a mechanical bending test.

• Journal of the Korean Ceramic Society
• /
• v.29 no.10
• /
• pp.827-835
• /
• 1992

The effects of CeO2 on the properties of cordierite-based glass-ceramics and its applicability to low firing temperature substrate were examined. Glass-ceramics were prepared by sintering the glass powder compacts at 900~100$0^{\circ}C$ for 3 h. Density, bending strength, dielectric constant and thermal expansion coefficient of the glass-ceramics were measured as functions of CeO2 contents and sintering temperatures. By adding CeO2, dense glass-ceramics were obtained below 100$0^{\circ}C$. dielectric constant and bending strength were more dependent on the porosity of glass-ceramics containing 5 wt% CeO2, sintered at 100$0^{\circ}C$ for 3 h, were as follows; relative density is 95.3%, bending strength is 178$\pm$11 MPa, dielectric constant is 4.98$\pm$0.20 (at 1 MHz) and thermal expansion coefficient is 33.7$\times$10-7/$^{\circ}C$. Therefore, the glass-ceramics containing 5 wt% CeO2 appeared to be suitable for low firing temperature substrate of electronic devices.