• 제목/요약/키워드: Low temperature oxidation

검색결과 587건 처리시간 0.024초

위단지구 티탄자철석의 수성 저온산화에 따른 자성변화 (Low-temperature Aqueous Oxidation of Titanomagnetites: Changes in Magnetic Properties of Pseudo-single Domain Particles)

  • 석동우
    • 자원환경지질
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    • 제34권1호
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    • pp.147-156
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    • 2001
  • 티탄자철석(titanomagnetite)은 해양지각을 이루는 현무암에 존재하는 중요한 자성광물로서 일반적으로 저온산화에 의해 양이온이 결핍된(cation-deficient) 티탄맥히마이트(titanomaghemite)로 변한다. 실험실에서 철성분 제거방식(removal of iron mechanism)을 통해 자연에서 일어나는 티탄자철석의 수성 저온산화(low-temperature aqueous oxidation)를 재현하였으며, 산화정도에 따라 티탄맥히마이트의 자기적 특성이 민감하게 변화하는 것을 관찰하였다. 본 실험 결과 산화정도에 따라 티탄자철석의 큐리온도(Tc)는 166$^{\circ}C$에서 40$0^{\circ}C$로 증가하였고, 상온에서의 포화자화 강도(Ms)는 126.30 kA/m(25.26 emu/g)에서 16.55 kA/m(3.31 emu/g)로 감소하였으며, 항자기력(Hc)은 6.13 kA/m(77 Oe)에서 38.83 kA/m (488 Oe)로 잔류항자기력(Hcr)은 23.24 kA/m(292 Oe)에서 47.03 kA/m(591 Oe)로 증가함을 관찰하였다. 또한 대자율($\chi$)은 $2023{\times}10^{-6}SI$에서 $84{\times}10^{-6}SI$로 감소함을 나타내었다. 이와 같은 결과를 근거로 현재에서 30 Ma까지의 해양지각의 자화 강도의 변화는 티탄자철석의 저온산화에 의한 결과로 해석하였으며 30~120 Ma에 이르는 해양지각의 자화 강도의 변화는 해양지각에 포함된 티탄자철석의 산화와 산화에 순반되는 광물전에 의한 결과로 추정하였으며 보다 구체적인 원인은 해양지각에서 채취한 시료에 대한 체계적인 연구를 통해서 밝혀질 것으로 기대된다.

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고압 수증기 내에서 산화막 형성에 관한 연구 (Oxide Layer Growth in High-Pressure Steam Oxidation)

  • 박경희;안순의;구경완;왕진석
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 하계학술대회 논문집
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    • pp.735-738
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    • 2000
  • This paper shows experimentally that oxide layer on the p-type Si-substrate can grow at low temperature(500$^{\circ}C$∼600$^{\circ}C$) using high pressure water vapor system. As the result of experiment, oxide layer growth rate is about 0.19${\AA}$/min at 500$^{\circ}C$, 0.43${\AA}$/min at 550$^{\circ}C$, 1.2${\AA}$/min at 600$^{\circ}C$ respectively. So, we know oxide layer growth follows reaction-controlled mechanism in given temperature range. Consequently, granting that oxide layer growth rate increases linearly to temperature over 600$^{\circ}C$, we can expect oxide growth rate is 5.2${\AA}$/min at 1000$^{\circ}C$. High pressure oxidation of silicon is particularly attractive for the thick oxidation of power MOSFET, because thermal oxide layers can grow at relatively low temperature in run times comparable to typical high-temperature, 1 atm conditions. For higher-temperature, high-pressure oxidation, the oxidation time is reduced significantly

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저온 래디컬 산화법에 의한 고품질 초박막 게이트 산화막의 성장과 이를 이용한 고성능 실리콘-게르마늄 이종구조 CMOS의 제작 (High Quality Ultrathin Gate Oxides Grown by Low-Temperature Radical Induced Oxidation for High Performance SiGe Heterostructure CMOS Applications)

  • 송영주;김상훈;이내응;강진영;심규환
    • 한국전기전자재료학회논문지
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    • 제16권9호
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    • pp.765-770
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    • 2003
  • We have developed a low-temperature, and low-pressure radical induced oxidation (RIO) technology, so that high-quality ultrathin silicon dioxide layers have been effectively produced with a high reproducibility, and successfully employed to realize high performace SiGe heterostructure complementary MOSFETs (HCMOS) lot the first time. The obtained oxide layer showed comparable leakage and breakdown properties to conventional furnace gate oxides, and no hysteresis was observed during high-frequency capacitance-voltage characterization. Strained SiGe HCMOS transistors with a 2.5 nm-thick gate oxide layer grown by this method exhibited excellent device properties. These suggest that the present technique is particularly suitable for HCMOS devices requiring a fast and high-precision gate oxidation process with a low thermal budget.

Scale 파괴거동 측정 및 해석 (Analysis and Measurement on Failure Behavior off Scales by Acoustic Emission Method)

  • 최진원
    • 한국소성가공학회:학술대회논문집
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    • 한국소성가공학회 2005년도 추계학술대회 논문집
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    • pp.330-331
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    • 2005
  • It was found possible to evaluate the temperature at which major scale failure takes place during cooling by installing a most modem acoustic emission(AE) analytical system. Ultra low carbon steel and low carbon steels containing a few minor alloying elements were oxidized in air at 900, 1050 and $1200^{\circ}C$ for 20 min, and then cooled in vacuum at 30, 70 and $110^{\circ}C/min$. The significance of the present research is the evaluation of the spallation temperature and thus the calculation of apparent thermal stress for scale spallation using the difference between oxidation temperature and spallation temperature. They were assessed as 0.22 to 0.68, 0.45 to 1.80, and 0.65 to 1.95 GPa for oxidation at 900, 1050 and $1200^{\circ}C$, respectively.

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휘발성 유기물질의 고효율 열산화 시스템 개발 연구 (Study on the Development of Recuperative Thermal Oxidation System for the Volatile Organic Compounds)

  • 현주수;이시훈;이종섭;민병무
    • 한국연소학회:학술대회논문집
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    • 한국연소학회 2004년도 제29회 KOSCI SYMPOSIUM 논문집
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    • pp.225-230
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    • 2004
  • Volatile organic compounds (VOCs) are low calorific value gases (LCVG) emitted from chemical processes such as painting booth, dye works and drying processes etc. Characteristics of VOCs are low calorific values less than 150 kcal/$m^3$, high activation energy for ignition and low energy output. These characteristics usually make combustion unstable and its treatment processes needs high-energy consumption, The cyclone combustion system is suitable for LCVG burning because it can recirculate energy through a high swirling flow to supply the activation energy for ignition, increases energy density to make a combustion temperature higher than usual swirl combustor and also increases mixing intensity, This research was conducted to develop optimized cyclone combustion system for thermal oxidation of VOCs. This research was executed to establish the effect of swirl number with respect to the combustion temperature and composition of exhausted gas in the specific combustor design.

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Oxidation Behaviors of SiCf/SiC Composites Tested at High Temperature in Air by an Ablation Method

  • Park, Ji Yeon;Kim, Daejong;Lee, Hyeon-Geun;Kim, Weon-Ju;Pouchon, Manuel
    • 한국세라믹학회지
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    • 제55권5호
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    • pp.498-503
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    • 2018
  • Using the thermal ablation method, the oxidation behavior of $SiC_f/SiC$ composites was investigated in air and in the temperature range of $1,300^{\circ}C$ to $2,000^{\circ}C$. At the relatively low temperature of $1,300^{\circ}C$, passive oxidation, which formed amorphous phase, predominantly occurred in the thermal ablation test. When the oxidation temperature increased, SiO (g) and CO (g) were formed by active oxidation and the dense oxide layer changed to a porous one by vaporization of gas phases. In the higher temperature oxidation test, both active oxidation due to $SiO_2$ decomposition on the surface of the oxide layer and active/passive oxidation transition due to interfacial reaction between oxide and base materials such as SiC fiber and matrix phase simultaneously occurred. This was another cause of high temperature degradation of $SiC_f/SiC$ composites.

프로판 엔진의 배기 포트에서 탄화수소 산화 예측을 위한 모델링 (Prediction Modeling of Unburned Hydrocarbon Oxidation in the Exhaust Port of a Propane-Fueled SI Engine)

  • 이형승;박종범;최회명;민경덕;김응서
    • 한국자동차공학회논문집
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    • 제8권2호
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    • pp.33-40
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    • 2000
  • In order to investigate the exhaust structure and secondary oxidation of unburned hydrocarbon (HC) in the exhaust port, a numerical simulation was performed with 3-dimensional flow model and oxidation mechanism optimized for port oxidation. To predict the exhaust and oxidation process with consideration of flow, mixing, and temperature, 3-dimensional flow model and HC oxidation model were used with a commercial computational program, STAR-CD. The flow model were with moving grid for valve motion, which could predict the change of flow field with respect to valve lift. Optimization was performed to predict the HC oxidation with temperature range of 1200~1500K, low HC and oxygen concentration, existence of intermediate species, as typical in port oxidation. The constructed model could predict the port oxidation process with oxidation degree of 14~48% according to the engine operation conditions.

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ECR 산소 플라즈마를 이용한 저온 열산화 (Low Temperature Thermal Oxidation using ECR Oxygen Plasma)

  • 이정열;강석원;이진우;한철희;김충기
    • 전자공학회논문지A
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    • 제32A권3호
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    • pp.68-77
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    • 1995
  • Characteristics of electron cyclotron resonance (ECR) plasma thermal oxide grown at low-temperature have been investigated. The effects of several process parameters such as substrate temperature, microwave power, gas flow rate, and process pressure on the growth rate of the oxide have been also investigated. It was found that the plasma density, reactive ion species, is strongly related to the growth rate of ECR plasma oxied. It was also found that the plasma density increases with microwave power while it decreases with decreasing O2 flow rate. The oxidation time dependence of the oxide thichness showed parabolic characteristics. Considering ECR plasma thermal oxidation at low-temperature, the linear as well as parabolic rate constants calculated from fitting data by using the Deal-Grove model was very large in comparison with conventional thermal oxidation. The ECR plasma oxide grown on (100) crystalline-Si wafer exhibited good electrical characteristics which are comparable to those of thermal oxide: fixed oxide charge(N$_{ff}$)= 7${\times}10^{10}cm^{-2}$, interface state density(N$_{it}$)=4${\times}10^[10}cm^{-2}eV^{-1}$, and breakdown field > 8MV/cm.

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저온산화반응 제어가 DME-가솔린 혼합연료의 HCCI 연소에 미치는 영향 (The Effect of Control of Low Temperature Oxidation using DME-gasoline Fuel Mixture on the HCCI Combustion)

  • 박영진;임옥택
    • 한국자동차공학회논문집
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    • 제22권2호
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    • pp.83-90
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    • 2014
  • The main purpose of the study is to investigate the ideal manner and ratio to inject gasoline and DME simultaneously into intake port, and moreover to confirm the characteristics of combustion and emission of engine. Experimental conditions are 1200 rpm, compression ratio 8.5, intake air temperature (383 K). Internal cylinder pressure was collected to confirm the characteristics of combustion in order to calculate the heat release rate in the cylinder. In addition, HORIBA (MEXA 7100) which was possible analyzing emissions (NOx, CO, HC) was used. Vanguard gasoline engine (23HP386447) was used in this experiment. The result show that fuel design (DME-Gasoline) leads to the decrease of low temperature heat release, which is a benefit for higher-load on the HCCI engine. Also, IMEP and the indicated thermal efficiency increase with combustion-phasing retard, and these observations can be explained by considering the control of low temperature oxidation of DME.

Si 첨가강의 Descaling 특성에 미치는 강조성 및 가열온도의 영향 (Effects of Composition and Temperature on the Descaling Characteristics in Si Containing Steel)

  • 최진원;권순주
    • 한국소성가공학회:학술대회논문집
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    • 한국소성가공학회 2004년도 제5회 압연심포지엄 신 시장 개척을 위한 압연기술
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    • pp.277-284
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    • 2004
  • Low carbon steels containing Si of up to $1.2\;wt\%$ were oxidized in air at 1373 K and 1523 K, i.e. below and above the eutectic temperature of FeO and $Fe_2SiO_4$. The influence of a impurity element, S on behavior of scale formation during oxidation was investigated by using $M\"{o}chssbauer$ spectroscopy and EDS. This allowed establishment of an interface oxidation model of Si-added steel depending on temperature and an impurity element. A compound of FeO and FeS was formed in the scale/matrix interface of low carbon steels containing S of up to $0.03\;wt\%$ oxidized above 1213 K of the eutectic temperature. This was flat formed between $Fe_2SiO_4$ nodules along the scale/matrix interface without selective oxidation. It is due to low viscosity and high wettability of the compound of FeO and FeS in liquid. Conventional metallographic examinations revealed that roughness of the scale/matrix interface in Si-added steels became flat as the content of S increased. It was independent of oxidizing temperature and Si content. Effects of oxidizing temperature and an impurity element content on descaling characteristics in Si-added steels were evaluated by using a hydraulic descaling simulator. Good descaling characteristics was attributable to this flatness of the scale/matrix interface.

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