• Journal of Biosystems Engineering
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• v.2 no.2
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• pp.37-45
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• 1977

Solar energy is a potential source of power that offers much promise being used for low-temperature applications like drying farm crops, space heating, and water heating for domestic uses. Already much of it are being used for those purpose in foreign countries. However, very little research has been done to determine the possibility of using the solar energy in Korea. This study was conducted to develop the general prediction equation of the total radiation on a horizontal surface in Daejeon area based on 5 years 91972, Jun.1-1976. Dec.31) meteorological data (bright sunshine hours, average total horizontal radiation), and to obtain experimentally the thermal efficiency of solar air and water collectors, which will be used as a basic data of designing flat-plate solar collector system.In addition to the thermal efficiency of the collectorsthe relationship among those factors affecting it such as weather condition, orientation factor, and tilted angle of collector was analyzed. The results of this study were as follows. 1. The general predicted equation of the total radiation on a horizontal surface in Daejeon area based on bright sunshine hours was developed as $H_{av} =(1.546\frac{n}{N}-0.582)H_o$. Predicting the total radiation on a horizontal surface by the above equation was thought to be possible because to values of 0.882 was smaller than any t values at above 0.05 level on the basis of two tailed test of the difference between the calculated and the recorded values. 2.It was observed that optimum tilt angle of the collector in the summer and the autumn drying season was 13 degrees and 51 degrees respectively, these values could be obtained by adding or substracting approximately 25 degrees from the latitude of this area $(36.3^{\circ}N)$ .The relationship between orientation factor and declination of sun at suitable tilt angle of 33 degrees $(s=0.9\O)$ was shown at Fig.4. 3.The thermal efficiency of solar wdter collector was shown 13.4-51. 6% on Aug. 15 (the minimum radiation recorded) and 43.8 ~537% Aug.20 (the maximum radiation recorded), and 13.8~ 46.6 and 44.3~ 49.7 were shown on each corresponding day. 4.The thermal efficiency of the collectors according to the weather condition was shown a big difference of about 10% between the day of the maximum radiation recorded and the minimum, but the differen of efficiency between the air and the water collector was at most 2 ~ 3%. 5. Even if the efficiency of the solar water collector was a little higher than the solar air collector, for drying farm products, the solar air collector was thought to be more effective because the air heated by collector could be directly used for drying them.

• Journal of the Korean Ceramic Society
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• v.52 no.6
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• pp.410-416
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• 2015

Recently, a new $Y_2O_3$ coating deposited using the EB-PVD method has been developed for erosion resistant applications in fluorocarbon plasma environments. In this study, surface crack formation in the $Y_2O_3$ coating has been analyzed in terms of residual stress and elastic modulus. The coating, deposited on silicon substrate at temperatures higher than $600^{\circ}C$, showed itself to be sound, without surface cracks. When the residual stress of the coating was measured using the Stoney formula, it was found to be considerably lower than the value calculated using the elastic modulus and thermal expansion coefficient of bulk $Y_2O_3$. In addition, amorphous $SiO_2$ and crystalline $Al_2O_3$ coatings were similarly prepared and their residual stresses were compared to the calculated values. From nano-indentation measurement, the elastic modulus of the $Y_2O_3$ coating in the direction parallel to the coating surface was found to be lower than that in the normal direction. The lower modulus in the parallel direction was confirmed independently using the load-deflection curves of a micro-cantilever made of $Y_2O_3$ coating and from the average residual stress-temperature curve of the coated sample. The elastic modulus in these experiments was around 33 ~ 35 GPa, which is much lower than that of a sintered bulk sample. Thus, this low elastic modulus, which may come from the columnar feather-like structure of the coating, contributed to decreasing the average residual tensile stress. Finally, in terms of toughness and thermal cycling stability, the implications of the lowered elastic modulus are discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.50-50
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• 2008

ZnO has been extensively studied for optoelectronic applications such as blue and ultraviolet (UV) light emitters and detectors, because it has a wide band gap (3.37 eV) anda large exciton binding energy of ~60 meV over GaN (~26 meV). However, the fabrication of the light emitting devices using ZnO homojunctions is suffered from the lack of reproducibility of the p-type ZnO with high hall concentration and mobility. Thus, the ZnO-based p-n heterojunction light emitting diode (LED) using p-Si and p-GaN would be expected to exhibit stable device performance compared to the homojunction LED. The n-ZnO/p-GaN heterostructure is a good candidate for ZnO-based heterojunction LEDs because of their similar physical properties and the reproducibleavailability of p-type GaN. Especially, the reduced lattice mismatch (~1.8 %) and similar crystal structure result in the advantage of acquiring high performance LED devices with low defect density. However, the electroluminescence (EL) of the device using n-ZnO/p-GaN heterojunctions shows the blue and greenish emissions, which are attributed to the emission from the p-GaN and deep-level defects. In this work, the n-ZnO:Ga/p-GaN:Mg heterojunction light emitting diodes (LEDs) were fabricated at different growth temperatures and carrier concentrations in the n-type region. The effects of the growth temperature and carrier concentration on the electrical and emission properties were investigated. The I-V and the EL results showed that the device performance of the heterostructure LEDs, such as turn-on voltage and true ultraviolet emission, developed through the insertion of a thin intrinsic layer between n-ZnO:Ga and p-GaN:Mg. This observation was attributed to a lowering of the energy barriers for the supply of electrons and holes into intrinsic ZnO, and recombination in the intrinsic ZnO with the absence of deep level emission.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.48 no.6
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• pp.63-70
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• 2011

A bicycle is different from vehicles in the structure that a rider is fully exposed to the surrounding environment. Therefore, it needs to make use of prior information about local weather, air quality, trail road condition. Moreover, since it depends on human power for moving, it should acquire route property such as hill slope, winding, and road surface to improve its efficiency in everyday use. Recent mobile applications which are to be used during bicycle riding let us aware of the necessity of development of intelligent bicycles. This study aims to develop a riding state (up-hill, down-hill, accelerating, braking) recognition algorithm using a low-power wrist watch type embedded system which has 3-axis accelerometer and wireless communication capability. The developed algorithm was applied to 19 experimental riding data and showed more than 95% of correct recognition over 83.3% of the total dataset. The altitude and temperature sensor also in the embedded system mounted on the bicycle is being used to improve the accuracy of the algorithm. The developed riding state recognition algorithm is expected to be a platform technology for intelligent bicycle interface system.

• Fire Science and Engineering
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• v.29 no.6
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• pp.57-64
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• 2015

Carbon dioxide extinguishing systems are broadly used for onshore and offshore fire accidents because of excellent performance and low cost. However, there is risk with carbon dioxide systems, which have caused many injuries and deaths by suffocation associated with industrial and marine fire protection applications. In this study, a numerical analysis was performed to predict the fire suppression characteristics of a carbon dioxide system in the compressor room of ships. A double protection safety system is suggested to prevent suffocation accidents from carbon dioxide extinguishing systems. Four scenarios were selected to study the variation of the heat release rate, maximum temperature, a $CO_2$ and $O_2$ mole fraction, and fire suppression characteristics with the carbon dioxide system. The importance of proper design is suggested for a ventilation system in the compressor room of ships.

• Membrane Journal
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• v.20 no.4
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• pp.278-289
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• 2010

A series of composite membranes based on sulfonated poly(arylene ether sulfone) (SPAES) were prepared via addition of tetraethyl orthosilicate (TEOS) and solution casting method. The morphological structure, water uptake, proton conductivity of the resulting composite membranes were extensively investigated as function of the content of TEOS. By the sol-gel reaction, TEOS molecules were not completely converted to $SiO_2$ particles, but formed only oligomer-type. Also, EDS confirms that the resulting silicon dioxide was homogeneously distributed in the composite membranes. As the content of TEOS increased, the prepared membranes increased water uptake and proton conductivity at high temperature and low relative humidity condition. In particular, considerably high proton conductivity (0.015 S/cm) at $120^{\circ}C$ and 48%RH was demonstrated in the composite membrane containing 200% TEOS, which is 10 times greater than that of unmodified SPAES membrane. Also, the composite membranes were found to have enhanced thermal stability compared to the unmodified membrane.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.03a
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• pp.16-16
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• 2010

GaN-based light-emitting diodes (LEDs) are attracting great interest as candidates for next-generation solid-state lighting, because of their long lifetime, small size, high efficacy, and low energy consumption. However, for general illumination applications, the external quantum efficiency of LEDs, determined by the internal quantum efficiency (IQE) and the light extraction efficiency, must be further increased. The IQE is determined by crystal quality and epitaxial layer structure and high value of IQE more than 70% for blue LEDs have been already reported. However, there is much room for improvement of light extraction efficiency because most of the generated photons from active layer remain inside LEDs by total internal reflection at the interface of semiconductor with air due to the high refractive index difference between LEDs epilayer (for GaN, n=2.5) and air (n=1). The light confining in LEDs will be reabsorbed by the metal electrode or active layer, reducing the efficacy of LEDs. Here, we present the first demonstration of enhanced light extraction by forming a MgO nano-pyramids structure on the surface of vertical-LEDs. The MgO nano-pyramids structure was successfully fabricated at room temperature using conventional electron-beam evaporation without any additional process. The nano-sized pyramids of MgO are formed on the surface during growth due to anisotropic characteristics between (111) and (200) plane of MgO. The ZnO layer with quarter-wavelength in thickness is inserted between GaN and MgO layers to increase the critical angle for total internal reflection, because the refractive index of ZnO (n=1.94) could be matched between GaN (n=2.5) and MgO (n=1.73). The MgO nano-pyramids structure and ZnO refractive-index modulation layer enhanced the light extraction efficiency ofV-LEDs with by 49%, comparing with the V-LEDs with a flat n-GaN surface. The angular-dependent emission intensity shows the enhanced light extraction through the side walls of V-LEDs as well as through the top surface of the n-GaN, because of the increase in critical angle for total internal reflection as well as light scattering at the MgO nano-pyramids surface.

• Journal of Microbiology and Biotechnology
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• v.24 no.4
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• pp.489-496
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• 2014

High levels of extracellular xylanase activity (211.79 IU/mg) produced by Paenibacillus sp. NF1 were detected when it was submerged-cultured. After three consecutive purification steps using Octyl-Sepharose, Sephadex G75, and Q-Sepharose columns, a thermostable xylanase (XynNF) was purified to homogeneity and showed a molecular mass of 37 kDa according to SDS-PAGE. The specific activity of the purified XynNF was up to 3,081.05 IU/mg with a 14.55-fold purification. The activity of XynNF was stimulated by $Ca^{2+}$, $Ba^{2+}$, DTT, and ${\beta}$-mercaptoethanol, but was inhibited by $Fe^{2+}$, $Zn^{2+}$, $Fe^{2+}$, $Cu^{2+}$, SDS, and EDTA. The purified XynNF displayed a greater affinity for oat spelt xylan with the maximal enzymatic activity at $60^{\circ}C$ and pH 6.0. XynNF, which was shown to be cellulose-free, with high stability at high temperature ($70^{\circ}C-80^{\circ}C$) and low pH range (pH 4.0-7.0), is potentially valuable for various industrial applications. The enzyme hydrolyzed oat spelt xylan to yield mainly xylooligosaccharides (95.8%) of 2-4 degree of polymerization (DP2-4). Moreover, the majority of the xylooligosacharides (DP2-4) products was xylobiose (61.5%). The thermostable xylanase (XynNF) thus seems potentially usefull in the production of xylooligosaccharides.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.236-236
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• 2008

(Bi,La)$Ti_3O_{12}$(BLT) thin film is one of the most attractive materials for ferroelectric random access memory (FRAM) applications due to its some excellent properties such as high fatigue endurance, low processing temperature, and large remanent polarization [1-2]. The authors firstly investigated and reported the damascene process of chemical mechanical polishing (CMP) for BLT thin film capacitor on behalf of plasma etching process for fabrication of FRAM [3]. CMP process could prepare the BLT capacitors with the superior process efficiency to the plasma etching process without the well-known problems such as plasma damages and sloped sidewall, which was enough to apply to the fabrication of FRAM [2]. BLT-CMP characteristics showed the typical oxide-CMP characteristics which were related in both pressure and velocity according to Preston's equation and Hernandez's power law [2-4]. Good surface roughness was also obtained for the densification of multilevel memory structure by CMP process [3]. The well prepared BLT capacitors fabricated by CMP process should have the sufficient ferroelectric properties for FRAM; therefore, in this study the electrical properties of the BLT capacitor fabricated by CMP process were analyzed with the process parameters. Especially, the effects of CMP pressure, which had mainly affected the removal rate of BLT thin films [2], on the electrical properties were investigated. In order to check the influences of the pressure in eMP process on the ferroelectric properties of BLT thin films, the electrical test of the BLT capacitors was performed. The polarization-voltage (P-V) characteristics show a decreased the remanent polarization (Pr) value when CMP process was performed with the high pressure. The shape of the hysteresis loop is close to typical loop of BLT thin films in case of the specimen after CMP process with the pressures of 4.9 kPa; however, the shape of the hysteresis loop is not saturated due to high leakage current caused by structural and/or chemical damages in case of the specimen after CMP process with the pressures of 29.4 kPa. The leakage current density obtained with positive bias is one order lower than that with negative bias in case of 29.4 kPa, which was one or two order higher than in case of 4.9 kPa. The high pressure condition was not suitable for the damascene process of BLT thin films due to the defects in electrical properties although the better efficiency of process. by higher removal rate of BLT thin films was obtained with the high pressure of 29.4 kPa in the previous study [2].

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.2
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• pp.14-19
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• 2011

We have fabricated GaN Schottky barrier diode (SBD) for high-voltage applications on Si substrate. The leakage current and the electrical characteristics of GaN SBD are investigated by annealing metal-semiconductor junctions. Ohmic junctions of Ti/Al/Mo/Au and Schottky junctions of Ni/Au are used in the fabrication. A test structure is proposed to measured buffer leakage current through a mesa structure. When annealing temperature is increased from $700^{\circ}C$ to $800^{\circ}C$, measured buffer leakage current is also increased from 87 nA to 780 nA at the width of 100 ${\mu}m$. The diffusion of Au, Ti, Mo, O into GaN buffer layer increases the leakage current and that is verified by Auger electron spectroscopy. Experimental results show that the low leakage current and the high breakdown voltage of GaN SBD are achieved by annealing metal-semiconductor junctions.