• Journal of the Korean Ceramic Society
• /
• v.34 no.6
• /
• pp.601-610
• /
• 1997

In cofiring of multilayered alumina with tungsten, the change of camber with lamination condition was experimented and the effect of sintering shrinkage of alumina and tungsten was investigated. From the exact measurement of sintering shrinkage of tungsten thick film, as lamination pressure increased, the sintering shrinkage of alumina decreased but that of tungsten thick film was not changed. So it was though that the main factor which induced the sintering shrinkage difference between ceramics and metal with lamination condition was the change of sintering shrinkage of ceramics. In case of high lamination pressure, high green sheet density, the cofired specimen showed low camber due to low shrinkage difference between alumina and tungsten and there was a linear relation between camber and shrinkage difference. It was found that this shrinkage difference could change the thickness of tungsten film and the microstructure within via hole during cofiring.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.19 no.1
• /
• pp.29-34
• /
• 2006

The effects of $B_2O_3$ addition on the low-temperature sintering behavior and microwave dielectric properties of $(Zn_{0.8}Mg_{0.2})TiO_3$ ceramic system were investigated. Highly dense samples were obtained at the sintering temperatures below $900^{\circ}C$. The $Q{\times}f_o$ values were determined by the microstructures and sintering shrinkages which are affected by the amount of $B_2O_3$ and sintering temperature. Temperature coefficient of resonance frequency($T_f$) changes to a positive value with increasing the amount of $B_2O_3$ due to the increased amount of rutile phase which is one of the reaction products between $(Zn_{0.8}Mg_{0.2})TiO_3$ and $B_2O_3$. For $6.19 moi.{\%}B_2O_3$-added $(Zn_{0.8}Mg_{0.2})TiO_3$ system, it exhibits ${\epsilon}_r$ = 23.5, $Q{\times}f_o$ = 53,000 GHz, and $T_f$ = 0 ppm/$^{\circ}C$ when sintered at $900^{\circ}C$ for 5 h.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.07b
• /
• pp.821-825
• /
• 2004

In this paper, in order to develop the low temperature sintering ceramics for multilayer piezoelectric transformer, PMN-PZT ceramcis using $Li_2CO_3$ and $Bi_2O_3$ as sintering aids were manufactured, and their microstructural, dielectric and piezoelectric properties were investigated. The sintering aids were proved to lower the sintering temperature of piezoelectric ceramics due to the effect of $LiBiO_2$ liquid phase. At 0.1wt% $Li_2CO_3$ added specimen sintered at $970[^{\circ}C]$, electromechanical coupling factor(Kp), mechanical quality factor(Qm) and dielectric constant showed the optimum values of 0.50, 2,413 and 1,245, respectively, for multilayer piezoelectric transformer application.

• Journal of the Korean Ceramic Society
• /
• v.50 no.3
• /
• pp.226-230
• /
• 2013

We performed high pressure high temperature (HPHT) sintering for the 20 nm MgO powders at the temperatures from $600^{\circ}C$ to $1200^{\circ}C$ for only 5 min under 7 GPa pressure condition. To investigate the microstructure evolution and physical property change of the HPHT sintered MgO samples, we employed a scanning electron microscopy (SEM), density and Vickers hardness measurements. The SEM results showed that the grain size of the sintered MgO increased from 200 nm to $1.9{\mu}m$ as the sintering temperature increased. The density results showed that the sintered MgO achieved a more than 95% of the theoretical density in overall sintering temperature range. Based on Vickers hardness test, we confirmed that hardness increased as temperature increased. Our results implied that we might obtain the dense sintered MgO samples with an extremely short time and low temperature HPHT process compared to conventional electrical furnace sintering process.

• Journal of Powder Materials
• /
• v.31 no.2
• /
• pp.146-151
• /
• 2024

Pure SnO₂ has proven very difficult to densify. This poor densification can be useful for the fabrication of SnO₂ with a porous microstructure, which is used in electronic devices such as gas sensors. Most electronic devices based on SnO₂ have a porous microstructure, with a porosity of > 40%. In pure SnO₂, a high sintering temperature of approximately 1300℃ is required to obtain > 40% porosity. In an attempt to reduce the required sintering temperature, the present study investigated the low-temperature sinterability of a current system. With the addition of TiO₂, the compositions of the samples were Sn_1-xTi_xO₂-CoO(0.3wt%)-CuO(2wt%) in the range of x ≤ 0.04. Compared to the samples without added TiO₂, densification was shown to be improved when the samples were sintered at 950℃. The dominant mass transport mechanism appears to be grain-boundary diffusion during heat treatment at 950℃.

• Journal of the Korean Ceramic Society
• /
• v.48 no.6
• /
• pp.604-609
• /
• 2011

Additives for low temperature sintering of mullite ceramics were investigated for matching Mo-Cu conducting paste with that ceramics at 1,400$^{\circ}C$. $SiO_2$, MgO and $Y_2O_3$ were chosen as the additives for low temperature sintering, and the amounts of those additives were varied with sintering temperature of 1,400$^{\circ}C$ to 1,500$^{\circ}C$. With additives of 1.0 wt% of $SiO_2$, 1.0 wt% of MgO, and 1.5 wt% of $Y_2O_3$, the densest sintered body of 3.12 g/$cm^3$ was obtained at 1,400$^{\circ}C$ in reducing atmosphere. The flexural strength of that was 325 MPa and the CTE (Coefficient of thermal expansion) was 4.33 ppm/$^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.26 no.8
• /
• pp.608-613
• /
• 2013

In this paper, the low-temperature sintering of $TiO_2$ is approached to solve the problem of high temperature sintering which decreases the interconnection between particles or between substrate and particle. $TiO_2$ paste is prepared with Titanium (IV) isopropoxide as the precursor material and calcinate at different conditions (low temperature). In the results, since the changing of temperature and time of sintering, crystalline phase do not change and the intensities of anatase, rutile phase are higher. At $110^{\circ}C$, 7 h sintering condition, crystalline size of anatase and rutile phase are the smallest which are 13.07 and 17.47 nm, respectively. In addition, the highest zeta potential is about 32.77 mV and the repulsive force increases thus leading to the best of the dispersion characteristics between $TiO_2$ particles. Futhermore, DSSCs at that condition exhibits the highest efficiency with the values of $V_{oc}$, $J_{sc}$, FF and ${\eta}$ are 0.69 V, $8.60mA\;cm^{-2}$, 67.93% and 4.06%, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.21 no.2
• /
• pp.144-150
• /
• 2008

Recently, there has been growing interest in low loss and low dielectric constant material for LTCC application, as the frequency range for electronic devices increases. This study was designed to evaluate the effect of cordierite filler for low dielectric constant LTCC material. From the previous experiments, two glass compositions of B-Si-Al-Zn-Ba-Ca-O and B-Si-Al-Sr-Ca-O system, were chosen. Each powder of two glass compositions was sintered respectively with commercial cordierite powder in temperature range from $800^{\circ}C\;to\;900^{\circ}C$. Crystalline cordierite and glass peaks were affected only with two factors of composition and sintering temperature among various factors. With the optimized condition of two cordierite/glass compositions, obtained dielectric constant was below 5.5 and quality factor was above 1,000. Closed pore of sintered body was controled by sintering temperature and sintering time. When cordierite/glass composite with ratio of 5.5:4.5 was sintered at $900^{\circ}C$, densification was sufficient with good dielectric characteristics of ${\epsilon}_r<5.1,\;Q{\ge}1,000$. Residual fine closed pores could be reduced with control of sintering temperature and time. 3 point bending strength and chemical durability were evaluated to obtain feasibility for substrate material.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.20 no.12
• /
• pp.1039-1043
• /
• 2007

In this paper, in order to develop low temperature sintering ceramics for multilayer piezoelectric actuator application, PMN-PZN-PZT ceramics were fabricated using $LiCO_3,\;Bi_2O_3$ and CuO as sintering aids. And also, their piezoelectric and dielectric properties were investigated according to the milling time. All the specimens sintered at $930\;^{\circ}C$ showed tetragonal phases without secondary phases. With increasing milling time, piezoelectric and dielectric characteristic of specimens increased up to 60 hours milling time and then decreased due to the agglomeration of fine particle. Accordingly, it seems that 60 hour is optimum milling condition. At the sintering temperature of $930\;^{\circ}C$ and milling time of 60 hour, density, dielectric constant(${\varepsilon}_r$), electromechanical coupling factor (kp), mechanical quality factor (Qm), piezoelectric d constant showed the optimum value of $7.95\;g/m^3$, 1382, 0.546, 1749, 330 pC/N, respectively for multilayer piezoelectric actuator application.

• Electrical & Electronic Materials
• /
• v.7 no.4
• /
• pp.306-311
• /
• 1994

In this study, the influence of the powder sintering, the 2nd sinteiing and the grinding time on the Superconducting properties in the Bi(Pb)SiCaCuO Superconductor has been studied. From the analysis of SEM and XRD patterns, it was known that the sample prepared by the process of powder sintering has a porous microstructure with the critical temperature(Tc) below 77K, while the sample prepared by the 2nd sintering has a highly oriented microstructure with the Tc above 100K. The Critical Current Density(Jc) of the sample prepared by the 2nd sintering was better than the sample prepared by the process of powder sinteiing, but it's Jc, was low in practical use. Also, the effect of grinding time from 0[min] to 120[min] was investigated. As the grinding time is increased, the samples degraded from high-Tc phase to low-Tc phase and nonsuperconducting phases.