• Transactions on Electrical and Electronic Materials
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• v.10 no.3
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• pp.80-84
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• 2009

The microstructure, voltage-current, capacitance-voltage, and dielectric characteristics of CCT doped Zn/Pr-based varistors were investigated at different sintering temperatures. As the sintering temperature increased, the average grain size increased from 4.3 to 5.1 ${\mu}m$ and the sintered density was saturated at 5.81 g $cm^{-3}$. As the sintering temperature increased, the breakdown field decreased from 7,532 to 5,882 V $cm^{-1}$ and the nonlinear coefficient decreased from 46 to 34. As the sintering temperature increased, the donor density, density of interface states, and barrier height decreased in the range of (9.06-7.24)${\times}10^{17}\;cm^{-3}$, (3.05-2.56)${\times}10^{12}\;cm^{-2}$, and 1.1-0.95 eV, respectively. The dielectric constant exhibited relatively low value in the range of 529.1-610.3, whereas the $tan{\delta}$ exhibited a high value in the range of 0.0910-0.1053.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.176-177
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• 2005

In this paper, in order to develop low temperature sintering $PbTiO_3$-system piezoelectric ceramics for thickness-vibration-mode piezoelectric transformer, $Pb_{0.76}Ca_{0.24}[(Mn_{1/3}Sb_{2/3})_{0.04}Ti_{0.96}]O_3$ ceramics using $0.25wt%CaCO_3$ and 0.2wt%$Li_2CO_3$ as sintering aids were manufactured according to the variation of poling field. Specimens could be sintered at the sintering temperature of $930^{\circ}C$. The piezoelectric properties increased according to the increase of poling field and showed the maximum values (kt=0.49, Qmt=1816, and $d_{33}$=81.4pC/N) under 6.5kV/mm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.212-213
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• 2005

In this study, in order to develop low temperature sintering piezoelectric actuator, $Pb_{0.985}Bi_{0.01}(Mg_{1/2}W_{1/2})_{0.03}(Ni_{1/3}Nb_{2/3})_{0.13}(Zr_{0.50},Ti_{0.50})_{0.84}$ (PMW-PNN-PZT) ceramic systems were fabricated using $CaCO_3-Li_2CO_3$, sintering aid through a post-annealing process. The sinterability of PMW-PNN-PZT ceranics was remarkably enhanced by liquid phase sintering of $CaCO_3$ and $Li_2CO_3$. But, it was confimed form the X-ray diffraction pattern that the secondary phase along grain boundaries, deteriorated the piezoelectric properties. The secondary phase along grain boundaries was significantly removed by annealing after sintering. The 0.2wt% $Li_2CO_3$-0.25wt% $CaCO_3$-added PMW-PNN-PZT ceramics post-annealed at 900$^{\circ}C$ for 90min exhibited the excellent electromechanical coupling factor($k_p$) of 63.3% and piezoelectric constant($d_{33}$) of 452pC/N, respectively, for multilayer piezoelectricactuatorapplication.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.11a
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• pp.8-12
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• 1994

Solid solutions $Sr_2$($Ta_{1-x}$$Nb_{x}$)$_2$$O_{7}$ (x = 0.0 - 1.0) composed of strontium-tantalate (low Curie temperature) and strontium-niobate (high Curie temperature) were prepared by the conventional mixed oxide method and the molten salt synthesis method (flux method). Phase relation, sintering temperature, grain-orientation and dielectric properties were investigated for sintered ceramic samples with different compositions. Both Curie temperature and dielectric constant at Curie temperature were increased, and sintering behavior and the degree of grain-orientation were improved with the increase of Nb content. Single phase $Sr_2$$Nb_2$$O_{7}$ powder was synthesized by using flux method at lower temperatures, and sintering temperature was also reduced by using flux method derived powder than using mixed-oxide derived powder. Sintering characteristics and dielectric properties of specimens prepared by flux method were better than those derived through the conventional method.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.326-329
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• 2002

In this study, to develop the low temperature sintering ceramics for multilayer piezoelectric transformer, $0.02Pb(Sb_{1/2}Nb_{1/2})O_{3}-0.13Pb(Ni_{1/3}Nb_{2/3}O_3-0.85Pb(Zr,Ti)O_{3}$ system ceramics were manufactured with the variations of sintering temperature between 1,090 and $1240^{\circ}C$ and its dielectric and piezoelectric characteristics were investigated. With increasing the sintering temperature, electromechanical coupling factor (kp) and mechanical quality factor(Qm) were decreased. At $1,180^{\circ}C$ sintered specimen showed maximum value of 0.535 electromechanical coupling factor (kp). On the other hand,. The specimen sintered at $1,180^{\circ}C$ showed the maximum value of ${\varepsilon}r$=1,571, Qm=1,181 respectively.

• Proceedings of the KIEE Conference
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• 2004.11a
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• pp.82-85
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• 2004

In this study, in order to increase piezoelectric properties of the low temperature sintering ceramics for multilayer piezoelectric transformer, PCW-PMN-PZT ceramics added with $Li_2CO_3$, $Bi_2O_3$ and CuO as sintering aids were manufactured according to the amount of $MnO_2$ addition, and their microstructural, dielectric and piezoelectric properties were investigated. When the sintering aids was added, specimens could be sintered at $950^{\circ}C$. However, sintering aids added specimens showed lower piezoelectric properties than those of non-added specimens. $0.1wt%MnO_2$ added specimen at $950^{\circ}C$ showed ${\varepsilon}_r$, of 1503, $k_p$ of 0.57 and $Q_m$ of 1502 were shown, respectively, and showed optimum properties for multilayer piezoelectric transformer.

• Journal of Ceramic Processing Research
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• v.22 no.5
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• pp.568-575
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• 2021

Glass-ceramic glazes were prepared using a CaO-MgO-Al2O3-SiO2 system and were used to fabricate low-temperature firing,high-hardness glazes in ceramic tiles. Additives (B2O3) and a nucleating agent (TiO2) were added to the glaze, and crystallineglazes were obtained by sintering at 1000 ~ 1100 oC for 30 or 60 min. X-ray diffraction analysis of the glazes suggested thatcordierite (Mg2Al4Si5O18) and anorthite (CaAl2Si2O8) crystal phases were present, and the peak intensity of the cordieritecrystal phase increased with increasing sintering temperature. All samples showed high crystallinities of 70% or more,irrespective of sintering temperature or time. The glaze density increased with increasing sintering temperature and decreasedat 1100 oC. The Vickers hardness test results of the glazes indicated high hardness values of 6.79 and 6.77 GPa after 30 minheat treatment at 1000 oC and 60 min at 1050 oC, respectively. Glass-ceramic glaze with high hardness at low temperature wasfabricated through crystallization of glaze for tiles.

• Journal of the Korean Ceramic Society
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• v.34 no.3
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• pp.289-295
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• 1997

Effect of ceramic processing was investigated on the microstructure and electronic properties of low loss Mn-Zn ferrite. Addition of CaO and SiO2 to calcined powder rather than to raw materials mixtured resulted in finer-grained microstructure. Higher oxygen pressure during sintering caused microstructural inhomogeneity and the increase in power loss and disaccommodation factor. Relatively low power loss was found for sintering up to 130$0^{\circ}C$ from powders calcined at high temperature and milled shortly. It was caused by slow densification rate and normal grain growth up to 130$0^{\circ}C$. Calcination at low temperature and prolonged milling enhanced den-sification, which gave a fine grained microstructure and low powder loss at sintering temperture below 120$0^{\circ}C$. Sintering temperature above 125$0^{\circ}C$, however, showed abnormal grain growth.

• Resources Recycling
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• v.12 no.6
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• pp.8-12
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• 2003

According to the recent trend to raise the horizontal scan frequency to increase the image refinement of the High Definition TV and High Resolution Display, material with low core loss is required for the ferrite core for deflection yoke, which is secured even in the high frequency range. liking notice of the influence on the fine structure of Mg-Zn ferrite by the chemical com position and process, low temperature sintering was proceeded. Cu was added to the low loss Mg-Zn system ferrite. After select-ing MgO, ZnO, $Fe_2$$O_3$, CuO, MgO was substituted for CuO while varying the composition ratio. Then the sample was sintered for 3 hours between $980～1350^{\circ}C$ Magnetic permeability, power consumption, shrinkage rate, core loss were measured. The start-ing temperature to test the shrinkage of the sample was nearby $900^{\circ}C$, it increased according to the substitution process of Cu, and the firing temperature was lowered about $-50～-75^{\circ}C$ alongside of the process.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.88.1-88.1
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• 2015

In recent printed electronics technology, Photo-Sintering, a technique for sintering materials using a light source, has attracted attention as an alternative to time-consuming high-temperature thermal processes. The key principle of this technique is the selective heating of a strongly absorbent thin film, while preventing the heating of the transparent substrate by the light source. Many recent studies have used a flash lamp as the light source, and investigated the material-dependent effect of the width or intensity of the pulsed light. However, the flash lamp for sintering is not suitable for industry yet, because of needing too high power to sinter for a large scale. In energy-saving and large-scale sintering, LED technologies would be very useful in the near future. In this work, we investigated a sintering process for silver nanoparticles using UV-LED array. Silver nanoparticles in ink were inkjet-printed on a $1{\times}1cm$ area of a PET film and photo-sintered by 365 nm UV-LED module. A sheet resistance value as low as $72.6m{\Omega}/sq$ (2.3 - 4.5 times that of bulk silver) was obtained from the UV-LED sintering at 300 mW/cm2 for 50 min.