• 제목/요약/키워드: Low energy ion beam

검색결과 121건 처리시간 0.022초

Design Study for Pulsed Proton Beam Generation

  • Kim, Han-Sung;Kwon, Hyeok-Jung;Seol, Kyung-Tae;Cho, Yong-Sub
    • Nuclear Engineering and Technology
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    • 제48권1호
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    • pp.189-199
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    • 2016
  • Fast neutrons with a broad energy spectrum, with which it is possible to evaluate nuclear data for various research fields such as medical applications and the development of fusion reactors, can be generated by irradiating proton beams on target materials such as beryllium. To generate short-pulse proton beam, we adopted a deflector and slit system. In a simple deflector with slit system, most of the proton beam is blocked by the slit, especially when the beam pulse width is short. Therefore, the available beam current is very low, which results in low neutron flux. In this study, we proposed beam modulation using a buncher cavity to increase the available beam current. The ideal field pattern for the buncher cavity is sawtooth. To make the field pattern similar to a sawtooth waveform, a multiharmonic buncher was adopted. The design process for the multiharmonic buncher includes a beam dynamics calculation and three-dimensional electromagnetic simulation. In addition to the system design for pulsed proton generation, a test bench with a microwave ion source is under preparation to test the performance of the system. The design study results concerning the pulsed proton beam generation and the test bench preparation with some preliminary test results are presented in this paper.

Charicteristics of HF 10-cm Type Grid Ion Source for Inert and Chemically Reactive Gases.

  • Chol, W.K;Koh, S.K;Jang, H.G;Jung, H.J;Kondranin, S.G.;Kralkina, E.A.;Bougrov, G.E.
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 1996년도 제10회 학술발표회 논문개요집
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    • pp.102-102
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    • 1996
  • This paper represents a new type low power High Frequency technological ion source (HF TIS) for ion - beam processing: the surface modification of materials, cleaning of surface, sputtering, coating of thin films, and polishing. The operational principle of HF TIS is based on the excitation of electrostatic waves in plasma located in the external magnetic field. Low power HF TIS with diameter 92 rom gives the opportunity to obtain beams of inert and chemically reactive gases with currents range from 5 to 150 mA (current density $0.015\;~\;3.5\;mA/\textrm{m}^2$) and ion beam energy 100 ~ 2500 eV at a HF power level 10 ~ 150 W. Three grid concave type ion optical system (IOS) is used for extraction and formation ofion beam.n beam.

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Ar-GCIB를 이용하여 ToF-SIMS에서 얻은 쥐의 뇌조직 이미지

  • 손현경;이태걸
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.378.1-378.1
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    • 2016
  • 나노바이오연구분야에서 ToF-SIMS를 이용하여 lipid와 metabolite같은 저 분자의 생체물질을 측정하는데 널리 이용되어 왔다. 최근에는 고 분자량의 생체물질을 측정하기 위해서 C60, water cluster, argon cluster등의 다양한 종류의 클러스터 이온빔들이 개발되어 왔다. [1,2] 하지만 tissue샘플을 클러스터 이온빔을 이용하여 분석한 결과에서도 m/z 1500이상의 고분자를 측정한 결과는 거의 없다. 바이오샘플의 charging을 상쇄하기위해 low energy electron beam (~20 eV)을 사용하는데, low energy electron beam이 샘플에 damage를 주기 때문이다. [3] 본 연구에서는 electron fluence (electrons/cm2)가 증가함에 따라 PC(16:0/18:1(9Z)와 Ganglioside GM1의 intensity가 감소함을 알았고, low energy electron beam에 의해 생체 물질이 damage를 받을 수 있음을 확인하였다. 따라서 tissue 샘플을 SUS기판에 샘플링하고 Ar-GCIB를 이용하면 charging없이 tissue imaging을 성공적으로 수행할 수 있고, m/z 2000이상의 고 분자량의 생체물질을 측정할 수 있음을 확인하였다.

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배향막 응용을 위한 이온 빔 조사된 ZnO 박막에 관한 연구 (Study on ZnO Thin Film Irradiated by Ion Beam as an Alignment Layer)

  • 강동훈;김병용;김종연;김영환;김종환;한정민;옥철호;이상극;서대식
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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    • pp.430-430
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    • 2007
  • In this study, the nematic liquid crystal (NLC) alignment effects treated on the ZnO thin film layers using ion beam irradiation were successfully studied for the first time. The ZnO thin films were deposited on indium-tin-oxide (ITO) coated glass substrates by rf-sputter and The ZnO thin films were deposited at the three kinds of rf power. The used DuoPIGatron type ion beam system, which can be advantageous in a large area with high density plasma generation. The ion beam parameters were as follows: energy of 1800 eV, exposure time of 1 min and ion beam current of $4\;mA/cm^2$ at exposure angles of $15^{\circ}$, $30^{\circ}$, $45^{\circ}$, and $60^{\circ}$. The homogeneous and homeotropic LC aligning capabilities treated on the ZnO thin film surface with ion beam exposure of $45^{\circ}$ for 1 min can be achieved. The low pretilt angle for a NLC treated on the ZnO thin film surface with ion beam irradiation for all incident angles was measured. The good LC alignment treated on the ZnO thin film with ion beam exposure at rf power of 150 W can be measure. For identifying surfaces topography of the ZnO thin films, atomic force microscopy (AFM) was introduced. After ion beam irradiation, test samples were fabricated in an anti-parallel configuration with a cell gap of $60{\mu}m$.

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Tilted Homeotropic Alignment using Ion Beam Process; Development of Novel Inorganic thin films

  • Hwang, Byoung-Har;Kim, Kyung-Chan;Ahn, Han-Jin;Kim, Jong-Bok;Baik, Hong-Koo
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.I
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    • pp.450-452
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    • 2005
  • The ion beam alignment technique is one of the potential and fascinating methods. However, there are merely a few reports about aligning nematic liquid crystals (NLCs) horizontally for in-plane switching mode (IPS) by means of low energy ion beam exposure on inorganic materials such as DLC. In this study, we have investigated the tilted vertical alignment of NLC by the ion beam technique on the thin films of various amorphous silicon compounds as new inorganic alignment materials. Appropriate pretilt angles of NLC with preferred orientation on these thin films were achieved. And the electro-optic property of vertically aligned single domain cells has been investigated.

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THE NEW TYPE BROAD BEAM ION SOURCES AND APPLICATIONS

  • You, D.W.;Feng, Y.C.;Wang, Y.;Kuang, Y.Z.
    • 한국진공학회지
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    • 제4권S2호
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    • pp.131-138
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    • 1995
  • The broad beam ion sources of hot filament plasma type have widely used for modifications of materials and thin films, and the new type intensive current broad beam metal ion source including reactive gaseous ion beams is needed for preparing the hard coating films such as DLC, $\beta-C_3N_4$ Carbides, Nitrides, Borides etc. Now a electorn beam evaporation(EBE) broad beam metal ion source has been developed for this purpose in our lab. CN film has been formed by the EBE ion source. Study of the CN film shows that it has high hardness(HK=5800kgf/$\textrm {mm}^2$)and good adhesion. This method can widely changes the ratio of C/N atom's concentrations from 0.14 to 0.6 and has high coating rate. The low energy pocket ion source which was specially designed for surface texturing of medical silicon rubber was also developed. It has high efficiency and large uniform working zone. Both nature texturing and mesh masked texturing of silicon rubbers were performed. The biocompatibility was tested by culture of monocytes, and the results showed improved biocompatibility for the treated silicon rubbers. In addition, the TiB2 film synthesized by IBED is being studied recently in our lab. In this paper, the results which include the hardness, thickness of the films and the AES, XRD analysis as well as the tests of the oxidation of high temperature and erosion will be presented.

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SURFACE PROCESSING OF TOOLS AND COMPONENTS BY MEVVA SOURCE ION IMPLANTATION

  • Lin, W.L.;Sang, J.M.;Ding, X.J.;Yuan, X.M.;Xu, J.;Zhang, H.X.;Zhang, X.J.
    • 한국진공학회지
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    • 제4권S2호
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    • pp.106-114
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    • 1995
  • Direct implantation of metallic ion species has been employed in surface processing of industrial components and tools with very encouraging improvements in recent years. In spite of high technicla effectiveness, this new surface processing technique has not been extensively accepted by industries mainly because of high cost(capital and operating) compared with other competitive surface processing techniques. High current and large implantation area with eliminating the mass analyzer and the beam-scanning unit make metal vapor vacuum are(MEVVA)source ion implantation versatile, simple and cheap to operate and well suited to commercial surface processing. In this paper, the recent development of MEVVA source ion implantation technique ar Beijing Normal University has been reviewed and the results of production trials of several industrial components and tools implanted by MEVVA source ion implantation have been presented and discussed.

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Discharge characterization of two-region arc plasma (TRAP) ion source

  • Kihyun Lee;Seung Ho Jeong;Tae-Seong Kim;Dae-Sik Chang;Sung-Ryul Huh
    • Nuclear Engineering and Technology
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    • 제56권9호
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    • pp.3961-3968
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    • 2024
  • The Korea Atomic Energy Research Institute (KAERI) is developing a novel Two-Region Arc Plasma Ion Source (TRAP) as a negative hydrogen (deuterium) ion source for a Neutral Beam Injection (NBI) system in a fusion tokamak. The TRAP ion source is based on a two-region configuration, comprising a high energy electron region that creates highly vibrationally excited molecules and a low electron temperature region that generates negative ions by attaching electrons to molecules. This configuration can be achieved by optimizing the filament position and magnetic cusp field. In order to optimize the TRAP configuration, the plasma parameters are investigated under various operating conditions, such as filament position, gas pressure, and arc power. Electron density and temperature are determined using Langmuir probe measurements. In this paper, the detailed experimental results are described and discussed.

저에너지 대면적 전자빔 발생장치 개발에 관한 연구 (A Study on the Low-energy Large-aperture Electron Beam Generator)

  • 조주현;최영욱;이홍식;임근희;우성훈;이광식
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제48권12호
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    • pp.785-790
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    • 1999
  • This research has been carried out to develop a low-energy large-aperture pulsed electron beam generator (LELA), 200keV 1A, for industrial applications. One of the most important feature of this electron beam generator is large electron beam cross section of $190cm^2$. Low energy electron beam generators have been used for water cleaning, flue gas cleaning, and pasteurization, etc. In these applications the cross sectionof the e-beam is related to reaction efficiency. Another important feature of this LELA EB generator is easy maintenance because of its simple structure and relatively low vacuum operation compared to the conventional EB generators. The conventional EB generators need to be scanned because the small cross section thermal electron emitters are used in the conventional EB generators which have small EB cross section. In this research, we use the secondary electrons generated by ion bombardment on the HV cathode surface as a electron source. Therefore we can make any shape of EB cross section without scanning.

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