• Title/Summary/Keyword: Low Temperature Adhesion

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PC/ASA blends having enhanced interfacial and mechanical properties

  • Kang, M.S.;Kim, C.K.;Lee, J.W.
    • Korea-Australia Rheology Journal
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    • v.18 no.1
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    • pp.1-8
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    • 2006
  • Blend of bisphenol-A polycarbonate (PC) and (acrylonitrile-styrene-acrylic rubber) terpolymer (ASA) having excellent balance in the interfacial properties and mechanical strength was developed for the automobile applications. Since interfacial adhesion between PC and styrne-acrylonitrile copolymer (SAN) matrix of ASA is not strong enough, two different types of compatibilizers, i.e, diblock copolymer composed of tetramethyl polycarbonate (TMPC) and SAN (TMPC-b-SAN) and poly(methyl methacrylate) (PMMA) were examined to improve interfacial adhesion between PC and SAN. TMPC-b-SAN was more effective than PMMA in increasing interfacial adhesion between PC and SAN matrix of ASA (or weld-line strength of PC/ASA blend). When blend composition was fixed, PC/ASA blends exhibited similar mechanical properties except impact strength and weld-line strength. Impact strength of PCI ASA blend at low temperature was influenced by rubber particle size and its morphology. PC/ASA blends containing commercially available PMMA as compatibilizer also exhibited excellent balance in mechanical properties and interfacial adhesion.

Effect of Surface Treatment of Polycarbonate Film on the Adhesion Characteristic of Deposited SiOx Barrier Layer (폴리카보네이트 필름 표면 처리가 증착 SiOx 베리어층 접착에 미치는 영향)

  • Kim, Gwan Hoon;Hwang, Hee Nam;Kim, Yang Kook;Kang, Ho-Jong
    • Polymer(Korea)
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    • v.37 no.3
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    • pp.373-378
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    • 2013
  • The interfacial adhesion strength is very important in $SiO_x$ deposited PC film for the barrier enhanced polycarbonate (PC) flexible substrate. In this study, PC films were treated by undercoating, UV/$O_3$ and low temperature plasma and then the effect of physical and chemical surface modifications on the interfacial adhesion strength between PC film and $SiO_x$ barrier layer were studied. It was found that untreated PC film shows significantly low interfacial adhesion strength due to the smooth surface and low surface free energy of PC. Low temperature plasma treatments resulted in the increase of both surface roughness and surface free energy due to etching and the appearance of polar molecules on the PC surface. However, UV/$O_3$ treatment only shows the increase of surface free energy by developed polar molecules on the surface. These surface modifications caused the enhancement of surface interfacial strength between PC film and $SiO_x$ barrier. In the case of undercoating, it was found that the increase of surface interfacial strength was achieved by adhesion between various acrylic acid on acrylate coated surface and $SiO_x$ without increase of polar surface energy. In addition, the barrier property is also improved by organic-inorganic hybrid multilayer structure.

The application of Nano-paste for high efficiency back contact Solar cell (고효율 후면 전극형 태양전지를 위한 나노 Paste의 적용에 대한 연구)

  • Nam, Donghun;Lee, Kyuil;Park, Yonghwan
    • 한국신재생에너지학회:학술대회논문집
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    • 2010.11a
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    • pp.53.2-53.2
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    • 2010
  • In this study, we focused on our specialized electrode process for Si back-contact crystalline solar cell. It is different from other well-known back-contact cell process for thermal aspect and specialized process. In general, aluminum makes ohmic contact to the Si wafer and acts as a back surface reflector. And, silver is used for low series resistance metal grid lines. Aluminum was sputtered onto back side of wafer. Next, silver is directly patterned on the wafer by screen printing. The sputtered aluminum was removed by wet etching process after rear silver electrode was formed. In this process, the silver paste must have good printability, electrical property and adhesion strength, before and after the aluminum etching process. Silver paste also needs low temperature firing characteristics to reduce the thermal budget. So it was seriously collected by the products of several company of regarding low temperature firing (below $250^{\circ}C$) and aluminum etching endurance. First of all, silver pastes for etching selectivity were selected to evaluate as low temperature firing condition, electrical properties and adhesive strength. Using the nano- and micron-sized silver paste, so called hybrid type, made low temperature firing. So we could minimize the thermal budget in metallization process. Also the adhesion property greatly depended on the composition of paste, especially added resin and inorganic additives. In this paper, we will show that the metallization process of back-contact solar cell was realized as optimized nano-paste characteristics.

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Fabrication and Characterization of High Temperature Electrostatic Chucks

  • Bang, Jae-Cheol
    • The Korean Journal of Ceramics
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    • v.5 no.1
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    • pp.87-90
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    • 1999
  • It was suggested that tape casting method can be used to fabricate high-temperature electrostatic chucks(HTESC) based on a metal substrate coated with a glass-ceramic insulating layer. The adhesion of the coating was excellent such that it was able to withstand temperature cycling to over $300^{\circ}C$ without spalling. The electrostatic clamping pressure reached a very high value of about 9 torr at 600V and generally followed the theoretical voltage-squared curve. Based on these results, we believe that we successfully developed a viable technique for manufacturing low cost HTESC.

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Adhesion improvement between metal and ceramic substrate by using ISG process (ISG법에 의한 금속과 세라믹기판과의 밀착력 향상)

  • 김동규;이홍로;추현식
    • Journal of the Korean institute of surface engineering
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    • v.32 no.6
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    • pp.709-716
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    • 1999
  • Ceramic is select for an alternative substrate material for high-speed circuits due to its low-thermal expansion. As, in this study, ceramic was prepared by ISG (interlayer sol-gel) process using metal salts and a metal alkoxide as the starting materials. Generally ceramic substrate is used electroless copper plating for the metallization. But it has been indicate weakely the adhesion strength between the substrate and copper layer. Therefore, this research, using the ISG process on the preparation of homogeneous and possible preparation at law temperature fabricated sol solution. Using of the dip coating method was coated for the purpose of giving the anchoring effect on the coating layer and enhancing the adhesion strength between the $Al_2$O$_3$ substrate and copper layer. This study examined primary the characteristic of the sol making condition and differential thermal analysis (DTA) X-ray diffraction (XRD) were mearsured to identify the crystal phase of heat treatment specimens. The morphology of the coated films were studied by scanning electron microscopy(SEM). As a resurt, XRD analysis was obtained patterns of $\alpha$-cordierite after heat-treatment about 2 hours at $1000^{\circ}C$. SEM analysis could have seen a large number of voids on coated film. The more contants of$ Al_2$$O_3$ Wt% was increased the more voids was advanced. Peel adhesion strength has a maximum in the contants of the TEOS:ANE of 1:0.7 mole%. In this case, adhesion strength has been measured 1150gf, peel adhesion strength were about 10 times more than uncoated of the ceramics film.

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Solid Lubrication Characteristics of DLC Coated Alumina Seals in High Temperature

  • Ok, Chul-Ho
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.356-356
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    • 2007
  • Plasma immersion ion beam deposition (PIIBD) technique is a cost-effective process for the deposition of diamond like carbon thin film, the possible solid lubricant on large surface and a complex shape. We used PIIB process for the preparation of DLC thin film on $Al_2O_3$ with deposition conditions of deposition temperature range $200^{\circ}C$, working gas pressure of 1.310-1Pa. DLC thin films were coated by $C_2H_2$ ion beam deposition on $Al_2O_3$ after the ion bombardment of SiH4 as the bonding layer. Energetic bombardment of $C_2H_2$ ions during the DLC deposition to ceramic materials generated mixed layers at the DLC-Si interface which enhanced the interface to be highly bonded. Wear test showed that the low coefficient of friction of around 0.05 with normal load 2.9N and proved the advantage of the low energy ion bombardment in PIIBD process which improved the tribological properties of DLC thin film coated alumina ceramic. Furthermore, PIIBD was recognized as a useful surface modification technique for the deposition of DLC thin film on the irregular shape components, such as molds, and for the improvement of wear and adhesion problems of the DLC thin film, high temperature solid lubricant.

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Improvement of the adhesion and resistivity of low-pressure chemical vapor deposited tungsten films by controlling deposition parameters (LPCVD로 증착한 텅스텐 박막의 증착 조건 제어에 의한 접착성 및 저항 특성 향상)

  • 노관종;윤선필;윤영수;노용한
    • Journal of the Korean Vacuum Society
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    • v.9 no.4
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    • pp.321-327
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    • 2000
  • Tungsten(W) thin films with good adhesion property and low resistivity (~10 $\mu$\Omega$$.cm) were deposited directly on $SiO_2$ by LPCVD. The adhesion property of W thin films on $SiO_2$ improves as the temperature and/or $SiH_4/WF_6$ gas ratio increase. Specifically tungsten thin films could be deposited on $SiO_2$ even at $350^{\circ}C$ if the gas ratio of 2 was employed. The resistivity of tungsten thin films deposited at $350^{\circ}C$ was high due to the presence of $\beta$-W. However, the resistivity can be minimized by increasing the amount of $H_2$ gas flow. Therefore, it is shown in this work that the adhesion of tungsten thin films on $SiO_2$ can be improved simply by controlling the process parameters (e.g., temperature, gas ratio and $H_2$ flow rate) without employing complex deposition methods or additional glue layers.

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Recent Trends in Low-Temperature Solution-Based Flexible Organic Synaptic Transistors Fabrication Processing (저온 용액 기반 유연 유기 시냅스 트랜지스터 제작 공정의 최근 연구 동향)

  • Kwanghoon Kim;Eunho Lee;Daesuk Bang
    • Journal of Adhesion and Interface
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    • v.25 no.2
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    • pp.43-49
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    • 2024
  • In recent years, the flexible organic synaptic transistor (FOST) has garnered attention for its flexibility, biocompatibility, ease of processability, and reduced complexity, which arise from using organic semiconductors as channel layers. These transistors can emulate the plasticity of the human brain with a simpler structure and lower fabrication costs compared to conventional inorganic synaptic devices. This makes them suitable for applications in next-generation wearable devices and soft robotics technologies. In FOST, the organic substrate is sensitive to the device preparation temperature; high-temperature treatment processes can cause thermal deformation of the organic substrate. Therefore, low-temperature solution-based processing techniques are essential for fabricating high-performance devices. This review summarizes the current research status of low-temperature solution-based FOST devices and presents the problems and challenges that need to be addressed.

Joint Characteristics of the Nylon/Metal Sliding Machine Elements (나일론/금속 접합 마찰기계요소의 접합특성)

  • 장윤상
    • Journal of the Korean Society for Precision Engineering
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    • v.20 no.3
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    • pp.125-132
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    • 2003
  • The joint method and characteristics of MC nylon and metal are analyzed. Considering the productivity and economics, two materials are joined with the process of turning, knurling, and induction heating. The joint strength is determined by adhesion of the melted nylon, the size of knurl, and the interference from the difference of the diameters. The adhesion strength of the melted nylon is measured. The effects of the knurl size and diameter difference are analyzed with the statistical methods. Finally the joint strength is analyzed in the environments of low, room, and high temperature. Based on this study, the nylon/metal material is expected to be widely used as the sliding machine elements with good lubrication and strength properties.

The Low Temperature Deposition of CrN Films by the AIP Method (아크 이온플레이팅법에 의한 저온 CrN 합성)

  • Cho, Yong K.;Kim, Sang K.;Lee, Won B.;Kim, Sung W.
    • Journal of the Korean Society for Heat Treatment
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    • v.20 no.2
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    • pp.78-83
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    • 2007
  • CrN coatings were deposited by cathodic arc ion plating method on the SKD11 steel substrates. Atmosphere temperature of $350^{\circ}C$, arc current of 90 A, nitrogen partial pressure of 1.0-5.3 Pa, and negative bias voltage of 30-135 V were selected. The characteristics of microstructure were investigated with XRD. Hardness, adhesion and friction coefficient measured by microhardness tester, scratch tester, and ball on disk tribometer. Microstructures depended on nitrogen partial pressure and bias voltage. The preferred orientation of the films was changed from (200) to (111) with decreasing pressure and increasing bias voltage. Adhesion properties related with microstructure, but microstructure changes slightly influenced on hardness and friction properties. The critical load.($Lc_1$) and hardness of CrN films deposited at 5.3 Pa, -30 V condition were 55 N(HF1), $2157{\pm}47\;Hk_{0.025}$. The friction coefficient were about 0.5 under dry condition.