• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.44-44
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• 2009

Recently, transparent ZnO-based TFTs have attracted much attention for flexible displays because they can be fabricated on plastic substrates at low temperature. We report the fabrication and characteristics of ZnO channel layers(ZnO TFTs) having different channel thicknesses. The ZnO film were deposited as active channel layers on $Si_3N_4/Ti/SiO_2p$-Si substrates by rf magnetron sputtering at $100\;^{\circ}C$ without additional annealing. Also the Zno thin films deposited at oxygen partial pressures of 40%. ZnO TFTs using a bottom-gate configuration were investigated. The $Si_3N_4$ film were deposited as gate insulator by PE-CVD at $15\;^{\circ}C$. All Processes were processed below $150^{\circ}C$ which is optimal temperature for flexible display and were used dry etching method.

• 한국전기전자재료학회논문지
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• 제22권10호
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• pp.821-825
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• 2009

Recently, transparent ZnO-based TFTs have attracted much attention for flexible displays because they can be fabricated on plastic substrates at low temperature. We report the fabrication and characteristics of ZnO TFTs having different channel thicknesses deposited at low temperature. The ZnO films were deposited as active channel layer on $Si_3N_4/Ti/SiO_2/p-Si$ substrates by RF magnetron sputtering at $100^{\circ}C$ without additional annealing. Also, the ZnO thin films deposited at oxygen partial pressures of 40%. ZnO TFTs using a bottom-gate configuration were investigated. The $Si_3N_4$ film was deposited as gate insulator by PE-CVD at $150^{\circ}C$. All Processes were processed below $150^{\circ}C$ which is optimal temperature for flexible display and were used dry etching method. The fabricated devices have different threshold slop, field effect mobility and subthreshold slop according to channel thickness. This characteristics are related with ZnO crystal properties analyzed with XRD and SPM. Electrical characteristics of 60 nm ZnO TFT (W/L = $20\;{\mu}m/20\;{\mu}m$) exhibited a field-effect mobility of $0.26\;cm^2/Vs$, a threshold voltage of 8.3 V, a subthreshold slop of 2.2 V/decade, and a $I_{ON/OFF}$ ratio of $7.5\times10^2$.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2008년도 춘계학술대회
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• pp.23-29
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• 2008

- High Density Plasma Source-CCP-Dual/Triple, RF Frequency Control - Radical/Flux Analysis - Low Pressure Process - Chamber Design (Process gap/Wall gap) - Chamber Temp. Control. - ESC Dielectric Materials - Uniform Gas Injection

• 한국물환경학회지
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• 제26권1호
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• pp.96-103
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• 2010

In this work, the presence of nitrification biochemical oxygen demand (NBOD) frequently occurred in the sewer outflow in winter season was analysed by the COD fraction methods using the respirometry and process simulations with real operation data measurements and analysis. The activated sludge models applied in this process simulation were based on the ASM No.2d temp. models, published by International Association on Water Quality (IAWQ). The ASM No.2d model is an extension of the ASM No.2 model and takes into account of carbon removal, nitrification, denitrification and phosphorus removal. The denitrifying capacity of phosphorus accumulating organisms has been implemented in the ASM No.2d model because experimental evidence shows that some of the phosphorus accumulating organisms can denitrify. It was shown that the concentrations of autotrophs (X_AUT) in the secondary clarifier and the $NH_4-N$ of T-N increased in the presence of NBOD measurements. Because of the low temperature (average $8^{\circ}C$) and possible operational troubles, the outcoming autotrophs exhausted oxygen in the process of nitrifying $NH_4-N$.

• 대한환경공학회지
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• 제27권2호
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• pp.191-197
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• 2005

Ceriodaphnia dubia를 이용한 새로운 독성시험법인 온도증가 단기독성평가법(ToxTemp, ToxCity test based on TEMPerature control)을 이용하여 농약성분에 대한 민감도를 조사하였다. BPMC, Diazinon, Fenitrothion등 하수의 생물학적 처리에 독성을 나타낼 수 있는 물질들에 대하여 기존의 실험방법인 표준 48시간 독성시험법과 비교했을 때 온도증가법은 $1{\sim}1.5$시간의 짧은 접촉시간에도 농약의 독성을 잘 감지할 수 있음을 알 수 있었다. 또한 중금속, 독성 유기화합물 그리고 농약성분을 비교, 평가했을 때 온도증가법은 1.25시간의 짱은 접촉시간 내에 48시간독성법의 결과와 높은 상관관계를 유지하며 독성을 감지하였다. 염색공단 폐수와 하수 등 실폐수에서의 독성평가능을 검토하기 위하여 활성슬러지를 이용한 질산화율, 산소이용율(OUR)과 C. dubia를 이용한 표준 48시간 독성시험법, 온도증가법을 비교하였다. 그 결과 OUR을 이용한 평가에서는 비교적 높은 질산화율 저해도를 보인 원수에 대해서도 독성민감도가 낮아 현장적용에 한계를 나타낸 반면 C. dubia를 이용한 표준 48시간 독성시험법과 온도증가법은 각기 다른 수준의 독성에 대해 민감하게 차이를 보였으며, 이 두 방법은 질산화율 저해도와 좋은 상관관계를 보였다. 온도증가법은 표준 48시간 독성시험법에 비해 1.5% 정도 민감도가 떨어지지만 현장에서의 신속한 감지가 가능하다는 점에서 현장에서의 질산화 독성진단에 대한 적용가능성이 높음을 보여주었다.

• Korean Chemical Engineering Research
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• 제59권4호
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• pp.611-625
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• 2021

국내에서 채광한 백운석(Ca·Mg(CO₃)₂) (20~30 mm)을 활용하여 Mg crown을 제조하였다. 백운석을 사용하여 경소 백운석(CaO·MgO)을 제조하기 위하여, (a) 전기로(950 ℃, 480분)와 (b) 마이크로웨이브 가열로(950 ℃, 60분)를 사용하는 공정을 적용한 결과를 서로 비교하였다. 전기로 공정의 경우에는 CaO 56.9 wt%, MgO 43.1 wt%, 마이크로웨이브 가열로 공정의 경우에는 CaO 55 wt%, MgO 45 wt%가 얻어졌다. 마이크로웨이브 가열로를 사용한 공정에서는 백운석의 탈탄산 반응 시간을 1/8로 단축하여도 경소백운석을 제조할 수 있었다. 수화 시험(hydration reaction, ASTM C110)은 경소백운석의 수화 반응성의 기준이 되는데, 전기로 공정의 경우에는 고 반응성(최고 온도 79.8 ℃/1.5 분)을 나타내었다. 이러한 수화 반응은 CaO의 수화 반응에 의해 일어나는 것을 XRD 분석 결과에서 확인할 수 있었으며, 마이크로 가열로 공정의 경우에는 저 반응성(최고 온도 81.7 ℃/19.5 분)을 나타내었다. 이러한 낮은 수화 반응성은 CaO의 수화 반응이 일어난 후에 MgO의 수화 반응이 일어나서 CaO와 MgO가 모두 수화물 형태로 되는 것을 XRD 분석 결과에서 확인하였다. 전기로와 마이크로웨이브 가열로를 사용하여 1,230 ℃, 60분, 5 × 10^-2 torr의 조건에서 규소열환원 공정으로 제조한 Mg crown은 전기로 공정의 경우에 58.8 g 그리고 마이크로웨이브 가열로 공정의 경우에 74.6 g을 얻을 수 있었다.

• 한국복합재료학회:학술대회논문집
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• 한국복합재료학회 2002년도 추계학술발표대회 논문집
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• pp.193-197
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• 2002

Polyurethane casting wing fairings included in F-5E/F 15% spar kit are to be installed on aircraft wing surfaces and used for compensating the changes of the aerodynamic configuration by the leading edge extension fairings. These fairing are mandatory items in repairing wing areas and was imported from foreign supplier with long term delivery and high cost. Accordingly, local manufacturing is necessary to get rid of above disadvantages such as long term delivery and high cost. Basic properties test of specimen to be developed and part's requirements after localization was taken and its values were similar or higher when comparing with the original's even in low temp test at -55C. Casting mold process was used to manufacture the polyurethane fairings and its demensional stability ＆ physical condition was proper and met to the related specification and drawing's requirements

• 한국군사과학기술학회지
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• 제23권5호
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• pp.523-531
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• 2020

Extraction and anti-solvent crystallization were proposed to recover octahydro-1,3,5,7-tetranitro-1,3,5,7-tetrazocine (HMX) from pressed polymer bonded explosives(PBXs). DXC-57 and DXC-59, whose polymeric binders are Estane and HyTemp with dioctyl adipate plasticizer, respectively, were used as pressed PBX models. Estane of DXC-57 was removed by washing with tetrahydrofuran prior to extraction, which enabled the crystallization of HMX at a low degree of supersaturation, sufficient to obtain β-form HMX. Using dimethyl sulfoxide and ethanol as the extraction solvent and the anti-solvent for crystallization, respectively, HyTemp and dioctyl adipate in DXC-59 were separated from HMX. The purity of recovered β-form HMX was higher than 99 %.

• 한국컴퓨터정보학회논문지
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• 제24권11호
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• pp.21-27
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• 2019

임베디드 시스템에서는 서비스 특성에 따라 정해진 시간 내에 처리해야하는 하드 실시간 시스템과 처리 시간이 더 유연한 유연한 실시간 시스템을 분리해야합니다. 실시간을 동시에 수행하기 위해 운영 체제를 8BIT MCU와 같은 저 성능 임베디드 장치로 이식하는 것은 어렵습니다. RTOS (실시간 OS)를 사양이 낮은 MCU에 포팅하고 여러 작업을 수행 할 때 실시간 및 일반 처리 성능이 크게 저하되어 8BIT MCU와 같은 저 성능 MCU로 포팅 된 운영체제에 하드 실시간 시스템이 필요한 경우 성능 저하로 인해 하드웨어 및 소프트웨어를 다시 설계하는 문제가 발생되고 있습니다. 저성능 MCU에 이식 된 RTOS (저 성능 MCU로 포팅)에서 실시간 처리 시스템 요구 사항을 처리에 대하여 연구하고 프로세스 스케줄링에 대하여 연구가 진행되었습니다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 추계학술대회 논문집 학회본부
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• pp.279-281
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• 1997

The properties of Platinum dry etching were investigated in MICP(Magnetized Inductively Coupled Plasma). The problem with Platinum etching is the redeposition of sputtered Platinum on the sidewall. Because of the redeposits on the sidewall, the etching of patterned Platinum structure produce feature sizes that exceed the original dimension of the PR size and the etch profile has needle-like shape.[1] Generally, $Cl_2$ plasma is used for the fence-free etching.[1][2][3] The main object of this study was to investigate a new process technology for the fence-free Pt etching. Platinum was etched with Ar plasma at the cryogenic temperature and with Ar/$SF_6$ plasma at room temperature. In cryogenic etching, the height of fence was reduced to 20% at $-190^{\circ}C$ compared with that of room temp., but the etch profile was not fence-free. In Ar/$SF_6$ Plasma, chemical reaction took part in etching process. The trend of properties of Ar/$SF_6$ Plasma etching is similar to that of $Cl_2$ Plasma etching. Fence-free etching was possible, but PR selectivity was very low. A new gas chemistry for fence-free Platinum etching was proposed in this study.