• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.2169-2171
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• 2005

A new structure is proposed to achieve a low sustaining voltage and high luminous efficacy. By measuring minimum sustaining voltage(Vs) discharge current(Ion), discharge(Ioff), and brightness of the light from a 4-inch ac-PDP, performances of the conventional structure and proposed structure are compared. When compared with the conventional structure, proposed structure showed 6.5% Vsm improvement, 22% luminance improvement and 20% light dispersion improvement at the Ne-Xe(8%) gas mixture of 400 torr.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.2018-2019
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• 2007

Organic light emitting diodes (OLEDs) show a lot of advantages for display purposes. Because OLEDs provide white light emission with a high efficiency and stability, it is desirable to apply OLEDs as an illumination light source and back light in LCD displays. We synthesized new emissive materials, namely $Zn(HPB)_2$ and Zn(HPB)q, which have a low molecular compound and thermal stability. We studied white OLEDs using $Zn(HPB)_2$ and Zn(HPB)q. The fundamental structures of the white OLEDs were ITO / NPB (40 nm) / $Zn(HPB)_2$ (40 nm) / Zn(HPB)q (20 nm) / LiAl (120nm). As a result, we obtained a maximum luminance of $15325cd/m^2$ at a current density of $997\;mA/cm^2$. The CIE (Commission International de l'Eclairage) coordinates are (0.28, 0.35) at an applied voltage of 9.75 V.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.491-492
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• 2006

We report on the fabrication of organic-based flexible display using an amorphous IZO anode grown at room temperature. The IZO anode films were grown by a conventional DC reactive sputtering on polycarbonate (PC) substrate at room temperature using a synthesized IZO target in a Ar/$O_2$ ambient. X-ray diffraction examination results show that the IZO anode film grown at room temperature is complete amorphous structure due to low substrate temperature. It is shown that the $Ir(ppy)_3$ doped flexible organic light emitting diode (OLED) fabricated on the IZO anode exhibit comparable current-voltage-luminance characteristics to OLED fabricated on conventional ITO/glass substrate. These findings indicate that the IZO anode film grown on PC substrate is a promising anode materials for the fabrication of organic based flexible displays.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.416-417
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• 2006

Organic light emitting diodes (OLEDs) show a lot of advantages for display purposes. Because OLEDs provide white light emission with a high efficiency and stability, it is desirable to apply OLEDs as an illumination light source and back light in LCD displays. We synthesized new emissive materials, namely [2-(2-hydroxyphenyl)benzoxazole] ($Zn(HPB)_2$) and [(2-(2-hydroxyphenyl)benzoxazole)(8-hydoxyquinoline)] (Zn(HPB)q), which have a low molecular compound and thermal stability. We studied white OLEDs using $Zn(HPB)_2$ and Zn(HPB)q. The fundamental structures of the white OLEDs were ITO/PEDOT:PSS (23 nm)/NPB (40 nm)/$Zn(HPB)_2$ (40 nm)/Zn(HPB)q (20 nm)/$Alq_3$ (10 nm)/LiAl (120 nm). As a result, we obtained a maximum luminance of $15325\;cd/m^2$ at a current density of $997\;mA/cm^2$. The CIE(Commission International de l'Eclairage) coordinates are (0.28, 0.35) at an applied voltage of 9.75 V.

• Journal of the Semiconductor & Display Technology
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• v.16 no.3
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• pp.82-86
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• 2017

High dynamic range (HDR) imaging offers a radically approach of representing colors in digital images. Instead of using the range of colors produced by given devices, HDR imaging method manipulates and stores all colors and brightness levels visible to the human eye. To faithfully represent, store and then reproduce all these effects, the original scene must be stored and treated using high fidelity HDR techniques. Then, tone mapping is required to accommodate HDR image to low dynamic range (LDR) devices, and tone mapping operation of HDR image for realistic display is commonly researched. However, color visualization for analyzing scene luminance in HDR imaging has less attention from researches. This paper presents and implements a method for reproduction and visualization of the false color in HDR images. We produce a color visualization framework with several mapping functions, and evaluate their effectiveness by using RMAE and SNR with commonly used HDR image data. Experiment reveals that the sigmodal mapping function shows better performance in the false color visualization, compared to other methods.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.5
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• pp.344-349
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• 2015

A new information society of late has arrived by the rapid development of various information & communications technologies. Accordingly, mobile devices which are light and thin, easy and convenient to carry on the market. Also, the requirements for the larger television sets such as fast response speed, low-cost electric power, wider visual angle display are sufficiently satisfied. The currently most widely studied display material, the Organic Light-emitting Diodes(OLEDs) overwhelms the Liquid Crystal Display(LCD), the main occupier of the market. This new material features a response speed of more than a thousand times faster, no need of backlight, a low driving voltage, and no limit of view angle. And the OLEDs has high luminance efficiency and excellent durability and environment resistance, quite different from the inorganic LED light source. The OLEDs with simple device structure and easy produce can be manufactured in various shapes such as a point light source, a linear light source, a surface light source. This will surely dominate the market for the next generation lighting and display device. The new display utilizes not the glass substrate but the plastic one, resulting in the thin and flexible substrate that can be curved and flattened out as needed. In this paper, OLEDs device was produced by changing thickness of Teflon-AF of hole injection material layer. And as for the electrical properties, the four layer device of ITO/TPD/$Alq_3$/BCP/LiF/Al and the five layer device of ITO/Teflon AF/TPD/$Alq_3$/BCP/Lif/Al were studied experimentally.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.11
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• pp.48-55
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• 2016

Ambient-light sensor system, which changes the brightness of a display as ambient light change, was studied to reduce the power consumption of the mobile applications such as note PC, tablet PC and smart phone. The ambient-light sensor system should be integrated on a display panel to improve the complexity and cost of mobile applications, so the ambient-light sensor and readout circuit was integrated on a display panel using low-temperature poly-silicon thin film transistors (LTPS-TFT). We proposed the new compensation method to correct the panel-to-panel variation of the ambient-light sensors, without additional equipment. We designed and investigated the new readout circuit with the proposed compensation method and the analog-to-digital converter for the final digital output of ambient light. The readout circuit has very simple structure and control timing to be integrated with LTPS-TFT, and the input luminance ranges from 10 to 10,000 lux. The readout rate is 100 Hz, and maximum differential non-uniformity with 20 levels of the final output below 0.5 LSB.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.148-148
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• 2015

Over the past several years, Colloidal core/shell type quantum dots lighting-emitting diodes (QDLEDs) have been developed for the future of optoelectronic applications. An inverted-type quantum-dot light-emitting-diode (QDLED), employing low work function organic material polyethylenimine ethoxylated(PEIE) (<10 nm)[1] modified ZnO nanoparticles (NPs) as electron injection and transport layer, was fabricated by all solution processing method, instead of electrode in the device. The PEIE surface modifier incorporated on the top of the ZnO NPs film, facilitates the enhancement of both electorn injection into the CdSe-ZnS QD emissive layer by lowering the workfunction of ZnO from 3.58eV to 2.87eV and charge balance on the QD emitter. In this inverted QDLEDs, blend of poly (9,9-di-n-octyl-fluorene-alt-benzothiadiazolo) and poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine] are used as hole transporting layer (HTL) to improve hole transporting property. At the operating voltage of 7.5 V, the QDLED device emitted spectrally orange color lights with high luminance up to 11110 cd/m2, and showed current efficiency of 2.27 cd/A.[2]

• Journal of the Korea Society of Computer and Information
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• v.16 no.10
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• pp.175-183
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• 2011

Performance of digital video watermarking is an assessment that hides a lot of information in digital videos. Therefore, it is required to find a way that enables to store lots of bits of data into a high quality video of the frequency area of digital contents. Hence, this paper designs a watermarking system improving security with an enhancing watermarking based on invisible watermarking and embedding an watermarking on LH and HL subband and its subband by transforming wavelet after the extraction of luminance component from the frames of video by compromising robustness and invisible of watermarking elements. The performance analysis of security of watermarking is carried out with a statistic method, and makes an assessment of robustness against variety of attacks to invisible watermarking. We can verify the security of watermarking against variety of attacks by testing robustness and invisible through carrying out general signal processing like noise addition, lossy compression, and Low-Pass filtering.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.246.1-246.1
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• 2014

Over the past several years, colloidal core/shell type quantum dots lighting-emitting diodes (QDLEDs) have been extensively studied and developed for the future of optoelectronic applications. In the work, we fabricate an inverted CdSe/ZnS quantum dot (QD) based light-emitting diodes (QDLED). In order to reduce work function of indium tin oxide (ITO) electrode for inverted structure, a very thin (<10 nm) polyethylenimine ethoxylated (PEIE) is used as surface modifier[1] instead of conventional metal oxide electron injection layer. The PEIE layer substantially reduces the work function of ITO electrodes which is estimated to be 3.08 eV by ultraviolet photoemission spectroscopy (UPS). From transmission electron microscopy (TEM) study, CdSe/ZnS QDs are uniformly distributed and formed by a monolayer on PEIE layer. In this inverted QDLEDs, blend of poly (9,9-di-n-octyl-fluorene-alt-benzothiadiazolo) and poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine] are used as hole transporting layer (HTL) to improve hole transporting property. At the operating voltage of 8 V, the QDLED device emitted spectrally orange color lights with high luminance up to 2450 cd/m2, and showed current efficacy of 0.6 cd/A, respectively.