• Journal of the Korean Institute of Intelligent Systems
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• v.27 no.2
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• pp.144-149
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• 2017

In this paper, we developed an intelligent and wideband RF-receiver module to represent a high dynamic range and good linearity characteristics up to 650MHz-2700MHz frequency band. and implemented an intelligent digital-RF- distorted signal measuring system for the RF distortion (intermodulation) signals. Broadband RF-receive module was designed to represent the optimized linear parameters of the receiver to meet the low noise and wide dynamic range. The designed intelligent digital-distortion(intermodulation) signal measument system measured by applying the 1MHz IF of third intermodulation signal of DUT and Measured data was recorded by program on the PC monitor with GUI interface. By variable up to 650MHz-2700MHz measured data showed up to -127.8dBc to -138dBc of the distortion (intermodulation) signal. And developed intelligent digital- distortion signal measurement system can be used to measure intermodulation distortion signal of wireless system widely.

• Journal of Advanced Marine Engineering and Technology
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• v.29 no.6
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• pp.618-627
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• 2005

In this paper, we have compared and analyzed the performance of high amplifier using Doherty technique to improve linearity and efficiency of base station and repeater Power amplifier for WCDMA. This Doherty amplifier implements with 3dB branch line coupler and $90^{\circ}C$ transmission line The phase offset line is designed to maintain the high linearity and efficiency at the low efficiency Period of the power amplifier CW 1-tone experimental results at the WCDMA frequency $2.11{\sim}2.17GHz$ shows that Doherty amplifier which achieves power add efficiency(PAE) of 50% at 6dB back off the point from maximum output power 52.3 dBm, obtains higher efficiency of 13.3% than class AB Finding optimum bias Point after adjusted gate voltage, Doherty amplifier shows that $IMD_3$ improves 4dB.

• The Journal of the Korea institute of electronic communication sciences
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• v.7 no.2
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• pp.221-226
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• 2012

In this paper, wideband two-stage amplification stage was designed, fabricated and evaluated. The proposed amplification stage with a novel gain control method have a high gain, low noise and high linearity performance. It is consisted of common emitter amplifier as the first stage, cascode gain control amplifier as second stage and power detector which sense the received signal strength. The proposed amplification stage shows a total gain of 29 dB~37 dB, noise fiugre of 1.5 dB at operating band and high linearity performance as the IMD (third intermodulation distortion) level is below the noise level of the measurement equipment at the control voltage 2.0 V generated from power detector under the strong electric field condition.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.71-71
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• 2012

As the critical dimensions of integrated circuits are scaled down, the line width and spacing between the metal interconnects are made smaller. The dielectric film used as insulation between the metal lines contributes to the resistance-capacitance (RC) time constant that governs the device speed. If the RC time delay, cross talk and lowering the power dissipation are to be reduced, the intermetal dielectric (IMD) films should have a low dielectric constant. The introduction of Cu and low-k dielectrics has incrementally improved the situation as compared to the conventional $Al/SiO_2$ technology by reducing both the resistivity and the capacitance between interconnects. Some of the potential candidate materials to be used as an ILD are organic and inorganic precursors such as hydrogensilsequioxane (HSQ), silsesquioxane (SSQ), methylsilsisequioxane (MSQ) and carbon doped silicon oxide (SiOCH), It has been shown that organic functional groups can dramatically decrease dielectric constant by increasing the free volume of films. Recently, various inorganic precursors have been used to prepare the SiOCH films. The k value of the material depends on the number of $CH_3$ groups built into the structure since they lower both polarity and density of the material by steric hindrance, which the replacement of Si-O bonds with Si-$CH_3$ (methyl group) bonds causes bulk porosity due to the formation of nano-sized voids within the silicon oxide matrix. In this talk, we will be introduce some properties of SiOC(-H) thin films deposited with the dimethyldimethoxysilane (DMDMS: $C_4H_{12}O_2Si$) and oxygen as precursors by using plasma-enhanced chemical vapor deposition with and without ultraviolet (UV) irradiation.

• Journal of Advanced Navigation Technology
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• v.8 no.2
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• pp.91-97
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• 2004

This paper presents the development of InGaAsP multiple quantum well asymmetric Fabry-Perot modulators(AFPM), which have a vertical structure and high performance and describes measurements of devices operating at 10GHz for next generation broadband wireless communication applications such as picocell systems. Advantages of the AFPM include low drive voltage, which is less than -2V, and -3dB coupling loss, good flatness of the frequency response and simple fiber alignment. A simple link demonstration has been introduced, resulting in 92dB/Hz spurious free dynamic range and 40dB inter-modulation distortion. This modulator could be use for broadband radio over fiber systems such as picocell and multiple RF links.

• Journal of Navigation and Port Research
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• v.27 no.2
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• pp.209-215
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• 2003

In this paper. We tested and fabricated the error amplifier for the 15 Watt linear power amplifier for the IMT-2000 baseband station. The error amplifier was comprised of subtractor for detecting intermodulation distortion, variable attenuator for control amplitude, variable phase shifter for control phase, low power amplifier and high power amplifier. This component was designed on the RO4350 substrate and integrated the aluminum case with active biasing circuit. For suppression of spurious, the through capacitance was used. The characteristics of error amplifier measured up to 45 dB gain, $\pm$0.66 dB gain flatness and -15 dB input return loss. Results of application to the 15 Watt feedforward Linear Power Amplifier, the error amplifier improved with 27 dB cancellation from 34 dBc to 61 dBc IM$_3$.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.27 no.9C
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• pp.871-878
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• 2002

The cartesian loop chip which is one of key devices in narrow-band Walky-Talky transmitter using RZ-SSB modulation method was designed and implemented with 0.35 ㎛ CMOS technology. The reduced size and low cost of transmitter were available by the use of direct-conversion and cartesian loop chip, which improved the power efficiency and linearity of transmitter. In addition, low power operation was possible through CMOS technology. The performance test results of transmitter showed -23㏈c improvement of IMD and -30㏈c below suppression of SSB characteristic in the operation of cartesian loop chip (closed-loop). At that time, the transmitting power was about 37㏈m (5W). The main parameters to improve the transmitting characteristic and to compensate the distortion in feed back loop such as DC-offset, loop gain and phase value are interfaced with notebook PC to be controlled with S/W.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.117-117
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• 2009

최근 고집적화 구조는 저항(resistance)과 정전용량 (capacitance)에 의한 신호 지연 (RC delay) 증가로 인한 혼선 (cross-talk noise)과 전력소모 (power dissipation)등의 문제를 발생시킨다. 칩 성능에 영향을 미치는 제한인자를 최소화하기 위해서는 저저항 배선 금속과 저유전상수 (low-k)의 층간 절연막 (IMD, intermetal dielectric) 물질이 필요하다. 최근 PECVD (plasma enhanced chemical vapor deposition)를 이용하여 증착시킨 유기살리케이트 (OSG, organosilicate glass)는 가장 유망한 저유전상수 물질로 각광받고 있다. 본 연구에서는 제일원리 연구를 통하여 OSG의 전구체 중에 하나인 DEMS 문자를 모델링하고, 에너지적으로 가장 안정한 구조를 찾아서 각 원자 간의 결합에 따른 해리에너지 (dissociation energy)를 계산하고, DEMS가 H-terminated Si 표면과 반응하는 기구에 대해 고찰하였다. 최적화된 DEMS 분자의 구조를 찾았고 DEMS 분자가 결합이 깨져 조각 분자군으로 될 때의 에너지들을 계산하였다. 계산된 해리에너지로부터 DEMS 분자의 O 원자와 C분자의 결합이 깨져서 $C_2H_5$를 조각 분자군으로 생성할 확률이 총 8가지의 경우에서 가장 높다는 것을 알 수 있었다. 8 가지의 해리된 DEMS 조각 분자군들이 H-terminated Si 표면과 반응할 때의 반응에너지를 계산한 결과 표면의 Si 원자와 DEMS 분자에서 $C_2H_5$가 해리되어 생성된 조각 분자군의 O 원자가 결합을 하고 부산물로 $C_2H_6$를 생성하는 반응이 가장 선호된다는 것을 알 수 있었다. DEMS 분자로 증착시킨 OSG에 대하여 제일원리법을 이용하여 계산한 연구는 보고된 바 없기 때문에, DEMS 분자의 각 원자 간의 해리에너지와 Si 기판과의 반응에너지는 추후 연구개발의 중요한 기초 자료가 될 수 있다.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.9
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• pp.967-973
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• 2003

This paper presents a new predistortion method which injects the 2nd low-frequency intermodulation signal of RF signals into the input bias line of the amplifier. New 2nd intermodulation signal extraction circuit is also proposed. We have shown that this method can suppress the 3rd IM apparently and sometimes do the 5th IM, through mathematical analysis, then confirmed it with simulation and verified it on the desk test. When the input signal CDMA IS-95 lFA is applied, measured ACPR improvements are 25 dBc, 22.5 dBc, and 6 dBc at 0.885 MHz, l.25 MHz and 2.25 MHz offset respectively. Also, when applying the CDMA IS-95 3FA, the measured ACPR improvement is 20 dBc at 0.885 MHz offset.

• Journal of the Korean Ceramic Society
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• v.34 no.3
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• pp.314-322
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• 1997

The thin film processing and the applicability as a IMD material of SiO2 aerogels providing ultralow dielec-tric properties were studied. The SiO2 aerogel films with 0.5g/㎤ density (78% porosity) and 4000~21000$\AA$ thickness could be prepared at 25$0^{\circ}C$ and 1160 psig by supercritical drying of wet-gel films, which were spin-coated at the spin rate of 1000~7000 rpm on p-Si(111) wafer under the isopropanol atmosphere. The optimum viscosity of polymeric SiO2 sols for spin coating was in the range of 10~14 cP. The main fac-tors being able to control the film thickness and microstructures were found to be sol concentration, spin rpm, and aging time of wet-gel films. The dielectric constant of the SiO2 aerogel thin film was around 2.0 low enough to be applied to the next generation semiconductor device beyond the giga level.