• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.07a
• /
• pp.993-996
• /
• 2001

In the composition of 0.16BaO-0.15(Nd$\_$0.87/,Bi$\_$0.13/)$_2$O$_3$-0.69TiO$_2$$.$Glass [EG-2782] 3wt% addition sintered at 1080$^{\circ}C$, we could obtained microwave properties of dielectric constant $\varepsilon$$\_$r/= 80.1, quality factor Q ${\times}$ f = 810 (at 3.5 GHz]) and temperature coefficient of resonant frequency $\tau$$\_$f/ = -1.3 [ppm/$^{\circ}C$]

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.21 no.12
• /
• pp.1083-1089
• /
• 2008

We studied the dielectric characteristics of low-k SiOCH thin films by Ellipsometry. The SiOCH thin films were prepared by deposition of BTMSM precursors on p-Si wafer by CCP-PECVD method. The nano-porous structural organic/inorganic hybrid-type of SiOCH thin films correlated directly to the formation of low dielectrics close to pore(k=1). The structural groups including highly dense pores in SiOCH thin films originated the anisotropic geometry type of network structure directing to complex refractive characteristics of SiOCH single layer on the p-Si wafer. The linearly polarized beam of Xe-ramp in the range from 190 nm to 2100 nm introduced to the surface of SiOCH thin film, and the reflected beam was Elliptically polarized by complex refractive coefficients of SiOCH dipole groups. The amplitude variation $\Psi$ and phase variation $\Delta$ of the relative reflective coefficients between perpendicular and parallel components to the incident plane were measured by Ellipsometry. The complex optical constants n and k as well as the dielectric constant and thickness of SiOCH thin films were driven by the measured value of $\Psi$ and $\Delta$.

• Journal of the Korean Applied Science and Technology
• /
• v.35 no.3
• /
• pp.676-682
• /
• 2018

In order to study electrical properties of epoxy composites with various frequency. To measure of dielectric characteristics have been performed over a frequency range from 30[Hz] to 3[MHz] and a temperature range of $20[^{\circ}C]$, $100[^{\circ}C]$, $140[^{\circ}C]$. We observed values of dielectric constant and dissipation of the epoxy composites with various frequency. We were observed dielectric loss and dispersion in low frequency region. Also, we observed to decrease of the dielectric constant due to the effects of filler in high temperature region.

• Transactions on Electrical and Electronic Materials
• /
• v.9 no.3
• /
• pp.91-95
• /
• 2008

In this study, in order to develop the composition ceramics for low loss multilayer piezoelectric actuator application, $Pb(Zn_{1/2}W_{1/2})O_3-Pb(Mn_{1/3}Nb_{2/3})O_3-Pb(Zr,Ti)O_3$ (abbreviated as PZW-PMN-PZT)ceramics according to the amount of $MnO_2$ addition were fabricated using two-stage calcinations method. And also, their dielectric and piezoelectric properties were investigated. At the 0.2 wt% $MnO_2$ added PZW-PMN-PZT ceramics sintered at $930^{\circ}C$, density, electromechanical coupling factor $k_p$, dielectric constant ${\varepsilon}_r$, piezoelectric $d_{33}$ constant and mechanical quality factor $Q_m$ showed the optimum value of $7.84g/cm^3$, 0.543, 1,392, 318.7 pC/N, 1,536, respectively for low loss multilayer ceramics actuator application.

• Electrical & Electronic Materials
• /
• v.16 no.9
• /
• pp.61.1-61
• /
• 2003

Stoichiometric, uniform, amorphous ZrO$_2$ films with an equivalent oxide thickness of ∼1.5nm and a dielectric constant of ∼18 were deposited by an atomic layer controlled deposition process on silicon for potential application in meta-oxide-semiconductor(MOS) devices. The conduction mechanism is identified as Schottky emission at low electric fields and as Poole-Frenkel emission at high electric fields. the MOS devices showed low leakage current, small hysteresis(〈50mV), and low interface state density(∼2*10e11/cm2eV). Microdiffraction and high-resolution transmission electron microscopy showed a localized monoclinic phase of ${\alpha}$-ZrO$_2$ and an amorphous interfacial ZrSi$\_$x/O$\_$y/ layer which has a correspondign dielectric constant of 11

• Proceedings of the Materials Research Society of Korea Conference
• /
• 1996.11a
• /
• pp.45-45
• /
• 1996

• Korean Journal of Materials Research
• /
• v.2 no.4
• /
• pp.263-269
• /
• 1992

Low-firing dielectric materials with negative small temperature coefficients were investigated. The newly developed materials are based on Ti$O_2$(100-x)/ CuOx(X=1~5wt%) with small amount of Mn$O_2$ additive. The sample without CuO was not sintered at 90$0^{\circ}C$. As CuO content was increased the sample could be sintered at low temperature. However, the dielectric constant was decreased and the dielectric loss was increased. In the case of adding 3wt% CuO and 0.6wt% Mn$O_2$, the dielectric constant and the Q values appeared very high.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.12 no.6
• /
• pp.292-298
• /
• 2002

Densified cordierite matrixes added alumina platelets were studied as a ceramic substrate material having a low thermal expansion coefficient, low dielectric constant and proper strength. Amorphous-type cordierite powders were filled with four kinds of alumina platelet powders in various compositions. All samples were sintered at $1300^{\circ}C$ for 2 h in an air atmosphere. Improved flexural strength of about 80 MPa, low dielectric constant of 5.0 at 1 MHz and low thermal expansion coefficient of $3.5 \times 10^{-6}/^{\circ}C$ were obtained by the control of the microstructure. Isolated micropores were formed in the matrix and the porosity was dependent on the platelet content and size. In the 10 vol% of alumina platelet content, the isolated micropores were 3~8 $\mu \textrm{m}$ in size, and an increase in dielectric constant by adding alumina platelet filler was inhibited by the micropores.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1999.05a
• /
• pp.625-629
• /
• 1999

In this study, in order to develop high sensitivity and low noise acoustic emission sensor, we manufactured the Pb(Zr, Ti)O$_3$ ceramics with the addition of WO$_3$ wt% to search for its required characteristics. Dielectric constant was increased as a function of the increase of WO$_3$ wt%. The Pb(Zr, Ti)O$_3$ (EC-65) ceramics added with 0.1lwt% WO$_3$ showed excellent dielectric constant and piezoelectric constants of 1931 and 199.55$\times$10$^{-12}$ (C/N), respectively. Accordingly It was shown as the composition ceramics suitable for AE sensor.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.07a
• /
• pp.127-130
• /
• 2002

In this study, development of a new LTCC material using a non-glassy system was attempted with respect to reducing the fabrication process steps and cost down. Lowering the sintering temperature can be achieved by liquid phase sintering. For LTCC application, the starting material must have quality factor as high as possible in microwave frequency range. And also, the material should have a low dielectric constant for enhancing the signal propagation speed. Regarding these factors, dielectric constants of various materials were estimated by the Clausius-Mosotti equation. Among them, CaWO$_4$ was tamed out the suitable LTCC material. CaWO$_4$ can be sintered up to 98% of full density at 1200$^{\circ}C$ for 3 hours. It's measured dielectric constant, quality factor, and temperature coefficient of resonant frequency were 10.15, 62880GHz, and -27.8ppm/$^{\circ}C$, respectively. In order to modify the dielectric properties and densification temperature, 0.5∼1.5 wt% LiF were added to CaWO$_4$. LiF addition reduced the sintering temperature/time down to 800$^{\circ}C$/10∼30min due to the reactive liquid phase sintering. Dielectric constant lowered from 10.15 to 9.38 and Q x fo increased up to 92000GHz with increasing LiF content.