• Journal of the Korean Institute of Telematics and Electronics
• /
• v.22 no.5
• /
• pp.87-92
• /
• 1985

A simple method to derive EID function which is necessary to compensate for the pro-ximity effect in electron-beam lithography is presented. Using optimization techniques, parameters of EID function is derived and well agreed with experimental valuta.

• Proceedings of the IEEK Conference
• /
• 2004.06b
• /
• pp.359-362
• /
• 2004

Electron beam on high energy acceleration, which travels deeply and sharply through photoresist, became to be used in e-beam lithography apparatus for nano-patterning in due to its high resolution. An advanced electron beam lithography simulation tool is currently undergoing development for nano-patterning. This paper will demonstrate such simulation efforts with experiments at 200 keV e-beam lithography processes on PMMA, ZEP520 of which photoresist parameters and characteristics will be explained with simulation results. Neureuther parameters was extracted from the contrast curve of the resist

• Carbon letters
• /
• v.24
• /
• pp.55-61
• /
• 2017

Carbon micropatterns (CMs) were fabricated from a negative-type SU-8 photoresist by proton ion beam lithography and pyrolysis. Well-defined negative-type SU-8 micropatterns were formed by proton ion beam lithography at the optimized fluence of $1{\times}10^{15}ions\;cm^{-2}$ and then pyrolyzed to form CMs. The crosslinked network structures formed by proton irradiation were converted to pseudo-graphitic structures by pyrolysis. The fabricated CMs showed a good electrical conductivity of $1.58{\times}10^2S\;cm^{-1}$ and a very low surface roughness.

• Proceedings of the KSME Conference
• /
• 2004.11a
• /
• pp.410-415
• /
• 2004

Molecular dynamics simulations of nanoimprint lithography in which a stamp with patterns is pressed onto amorphous poly-(methylmethacrylate) (PMMA) surface are performed to study the deformation of polymer. Force fields including bond, angle, torsion, inversion, van der Waals and electrostatic potential are used to describe the intermolecular and intramolecular force of PMMA molecules and stamp. Periodic boundary condition is used in horizontal direction and $Nos\acute{e}$-Hoover thermostat is used to control the system temperature. As the simulation results, the adhesion forces between stamp and polymer are calculated and the mechanism of deformation are investigated. The effects of the adhesion force and friction force on the polymer deformation are also studied to analyze the pattern transfer in nanoimprint lithography. The mechanism of polymer deformation is investigated by means of inspecting the indentation process, molecular configurational properties, and molecular configurational energies.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 1993.10a
• /
• pp.687-692
• /
• 1993

This paper deals with the generation of laser scan path for manufacturing 3-dimensional body using StereoLithography. The purpose of this study is to develop one module of the StersoLithography system(SLA) for Rapid Protyping and Manufacturing. AutoCAD system is used to supply CAD information from model. The X-Y controller which was made for a special purpose is used to test this system. The system software developed is composed of 3 main modules, the first module is calculating the boundary point os laser scan path. The scound module is generating final output file which is used to down load on the controller. The result of this study shows a good algorithm to generate laser scan path on the basis of simple mathematical background.

• 한국신재생에너지학회:학술대회논문집
• /
• 2009.06a
• /
• pp.156-158
• /
• 2009

우리 연구팀은 $SiO_2$ nanospheres를 이용한 natural lithography를 통해 2가지 방법으로 GaAs 기판의 반사율을 감소시켰다. 먼저 GaAs 기판 위에 benzocyclobutene(BCB) 고분자를 코팅한 후, 그 위에 $SiO_2$ nanospheres를 코팅한다. 그리고 고분자의 유리전이 온도이상으로 가열하면 $SiO_2$ nanospheres가 고분자 속으로 가라앉게 되어 렌즈 형태의 표면이 형성된다. 또한, 이 상태에서 BOE 용액을 통해 $SiO_2$ nanospheres를 제거하여 오목한 형태의 표면을 형성할 수 있다. 이러한 2가지 방법의 surface texturing을 통해 우리는 GaAs 표면의 반사도를 각각 400~800nm의 파장에서 평균 13.6%~16.52%의 반사율을 얻을 수 있었다.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
• /
• 2004.11a
• /
• pp.83-89
• /
• 2004

In this paper, molecular dynamics simulations are performed to analyze the adhesion between a diamond mould and a copper substrate in diamond nanoimprint lithography. The diamond nanoimprint lithography process is simplified as punch-type nanoindentation. The copper substrates are assumed to monocrystalline and defect free and consist of $22500\~80000$ atoms depending on their dimension. The diamond moulds consist of 916 or 2414 atoms, which is assumed to be rigid. The consistent results lot the maximum normal force and the adhesion force are obtained regardless of the size of substrates and the adhesion hysteresis is shown in all cases. It is found that the friction acting on the sidewalls of the mould affects the adhesion significantly when the mould is released from the substrate.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.14 no.1
• /
• pp.6-11
• /
• 2001

We studied the feasibility of optical lithography for the critical layers of 0.12${\mu}{\textrm}{m}$ DRAM assuming ArF excimer laser as a light source. To enhance the fidelity of aerial image and process margin, Phase shift mask (PSM) patterns as well as binary mask patterns are corrected with in-house developed Optical Proximity Correction (OPC) software. As the result, w found that the aerial image of critical layers of DRAM cell with 0.12${\mu}{\textrm}{m}$ design rule could not be reproduced with binary masks. But if we use PSM or optical proximity corrected PSM, the fidelity of aerial image ,resolution and process margin are so much enhanced that they could be processed with optical lithography.

• Transactions on Electrical and Electronic Materials
• /
• v.5 no.3
• /
• pp.104-108
• /
• 2004

Problems of overlap errors and side-lobe printing by the design rule reduction in the lithography process using attenuated phase-shifting masks(attPSM) have been serious. Overlap errors and side-lobes can be simultaneously solved by the rule-based correction using scattering bars with the rules extracted from test patterns. Process parameters affecting the attPSM lithography simulation have been determined by the fitting method to the process data. Overlap errors have been solved applying the correction rules to the metal patterns overlapped with contact/via. Moreover, the optimal insertion rule of the scattering bars has made it possible to suppress the side-lobes and to get additional pattern fidelity at the same time.

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.33A no.7
• /
• pp.198-204
• /
• 1996

Electron beam lithography is one of the importnat technologies which can delineate deep submicron patterns. REcently, electron beam lithography is being applied in delineating the critical layers of semiconductor device fabrication. In this paper, we present a development simulation program for electron beam lithography and study the development profiles of resist when resist is exposed by the electron beam. Experimentally, the development parameter of positive and negative resists are measured and the data is applied to input parameter of the simulation program. Also simulation results are compared of the process results in the view of resist profiles. As a result, for PMMA and SAL 601 resist, the trend of simulation to the values of process parameters agree with real process results very well, so that the process results can be predicted by the simulation.