• Journal of the Microelectronics and Packaging Society
• /
• v.27 no.4
• /
• pp.67-75
• /
• 2020

In this paper, by applying LCP substrate, the capacitor and inductor are implemented with a variety of value that can be used in 35 GHz circuits. Depending on how to apply it to the circuit, it is required high value by designing the basic structures such as electrode capacitor and spiral inductor. However they are not available in high-frequency domain, because their SRF(Self-Resonant Frequency) is lower than the frequency of 35-GHz. By finding the limit, this paper devised classifying passive devices for the DC and the high-frequency domain. The basic structure is suitable for DC and microstrip λ/8 length stub structure can be used for high-frequency. The open and short stub structure operate as a capacitor and inductor respectively in the frequency of 35 GHz. If their impedance is known, it is possible to extract the value through the impedance-related equation. By producing with the permittivity 2.9 LCP substrate, the basic structure which are available in the DC constituted a library of capacitance of 1.12 to 13.9 pF and inductance of 0.96 to 4.69 nH, measured respectively. The stub structure available in the high-frequency domain were built libraries of capacitance of 0.07 to 2.88 pF and inductance of 0.34 to 1.27 nH, calculated respectively. The measurements have proven how to diversify value, so libraries can be built more variously. It is possible to integrate with the operation circuit of TRM(Transmit-Receive Module) for the frequency 35-GHz, it will be an alternative to the passive devices that can be properly utilized in the circuit.

• Analytical Science and Technology
• /
• v.19 no.6
• /
• pp.535-543
• /
• 2006

Being used widely in semiconductor and display manufacturing, $NF_3$ is internationally considered as one of the regulated compounds in emission. Numerous companies have been continuously trying to reduce the emissions of $NF_3$ to comply with the global environmental regulation. This work is made to report the destruction and removal efficiency (DRE) of electrically heated scrubbers and the use rate in process chambers installed in three main LCD manufacturing companies in Korea. As the measurement techniques for $NF_3$ emission, mass flow controlled helium gas was continuously supplied into the equipment by which scrubber efficiency is being measured. The partial pressures of $NF_3$ and helium were accurately measured for each sample using a mass spectrometer, as it is emitted from inlet and outlet of the scrubber system. The results show that the DRE value for electrically heated scrubbers installed before 2004 is less than 52 %, while that for the new scrubbers modified based on measurement by scrubber manufacturer has been sigificentely improved upto more than 95 %. In additon, we have confirmed the efficiency depends on such variables as the inlet gas flow rate, water content, heater temperature, and preventative management period. The use rates of $NF_3$ in process chambers were also affected by the process type. The use rate of radio frequency source chambers, built in the $1^{st}$ and $2^{nd}$ generation process lines, was determined to be less than 75 %. In addition, that of remote plasma source chambers for the $3^{rd}$ generation was measured to be aboove 95 %. Therefore, the combined application of improved scrubber and the RPSC process chamber to the semiconductor and display process can reduce $NF_3$ emmision by 99.95 %. It is optimistic that the mission for the reduction of greenhouse gas emission can be realized in these LCD manufacturing companies in Korea.