• Journal of the Korean Ceramic Society
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• v.32 no.10
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• pp.1162-1168
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• 1995

Systematic studies of the effects of additives and processing variables on the sintered density and the effect of crystalline forms of starting powders on the microstructure of pressureless sintered silicon carbide are described. Oxide additives were effective for the densification of SiC up to 96% of theoretical density at temperature as low as 185$0^{\circ}C$. Use of embedding powder increased the sintered density, up to 98% of theoretical density, by decreasing the weight loss during sintering. Composite type duplex microstructure has been developed due to the $\beta$longrightarrow$\alpha$ phase transformation of SiC by sintering at 185$0^{\circ}C$ and heat treatment at 195$0^{\circ}C$ for 1h.

• Journal of Electrochemical Science and Technology
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• v.11 no.4
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• pp.392-398
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• 2020

Producing solar grade silicon using an inexpensive method is a key factor in lowering silicon solar cell costs; the direct electrochemical reduction of SiO₂ in molten salt is one of the more promising candidates for manufacturing this silicon. In this study, SiO₂ granules were electrochemically reduced in molten CaCl₂ (850℃) using Ag-Si eutectic droplets that catalyze electrochemical reduction and purify the Si product. When Ag is used as the working electrode, the Ag-Si eutectic mixture is formed naturally during SiO₂ reduction. However, since the Ag-Si eutectic droplets are liquid at 850℃, they are easily lost during the reduction process. To minimize the loss of liquid Ag-Si eutectic droplets, a cylindrical graphite container working electrode was introduced and Ag was added separately to the working electrode along with the SiO₂ granules. The graphite container working electrode successfully prevented the loss of the Ag-Si eutectic droplets during reduction. As a result, the Ag-Si eutectic droplets acted as stable catalysts for the electrochemical reduction of SiO₂, thereby producing one-dimensional Si rods through a mechanism similar to that of vapor-liquid-solid growth.

• Bulletin of the Korean Chemical Society
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• v.32 no.12
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• pp.4392-4396
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• 2011

Porous silicon with a complex network of nanopores is utilized for photoelectrochemical energy conversion. A novel electroless Pt deposition onto porous silicon is investigated in the context of photoelectrochemical hydrogen generation. The electroless Pt deposition is shown to improve the characteristics of the PS photoelectrode toward photoelectrochemical $H^+$ reduction, though excessive Pt deposition leads to decrease of photocurrent. Furthermore, it is found that a thin layer (< 10 ${\mu}m$) of porous silicon can serve as anti-reflection layer for the underlying Si substrate, improving photocurrent by reducing photon reflection at the Si/liquid interface. However, as the thickness of the porous silicon increases, the surface recombination on the dramatically increased interface area of the porous silicon begins to dominate, diminishing the photocurrent.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.11a
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• pp.167-167
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• 2015

SiC thin films made by vapor silicon infiltration into porous graphite can be obtained for shorter time than liquid silicon. Si diffusion coefficient is estimated by comparing experiment results with quadratic equation obtained by Fick's second law.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.939-942
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• 2004

In this study, we report simulation results of single-panel LCOS (liquid crystal on silicon). Reflective LCOS microdisplays are widely used in various projection and near-eye application. For one panel system, liquid crystal response time is an important variable. The panel must switch fast enough to support the display of Field color sequential with high field rates. In order to have fast response and good contrast, a vertical alignment (VA) cell was used in this study. With suitable selection on LC parameters like temperature, viscosity, elastic constant and birefringence, it is possible to get response time of around 2ms from a 2.0 um-thick vertical alignment cell. This result also indicates an ease of production control on 2.0 um cells than 1.0 um cells.

• Journal of the Korean Ceramic Society
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• v.42 no.8 s.279
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• pp.542-547
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• 2005

Keys to the attainment of tailored properties in SiC ceramics are microstructure control and judicious selection of the sintering additives. In this study, three different strategies for controlling microstructure of liquid-phase-sintered SiC ceramics (LPS-SiC) have been suggested: control of the initial $\alpha-SiC$ content in the starting powder, a seeding technique, and a post-sintering heat treatment. The strategies suggested offer substantial flexibility for producing toughened SiC ceramics whereby grain size, grain size distribution, and aspect ratio can be effectively controlled. The present results suggest that the proposed strategies are suitable for the manufacture of toughened SiC ceramics with improved toughness.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.440-440
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• 2009

Semiconductor nanowires offer exciting possibilities as components of solar cells and have already found applications as active elements in organic, dye-sensitized, quantum-dot sensitized, liquid-junction, and inorganic solid-state devices. Among many semiconductors, silicon is by far the dominant material used for worldwide photovoltaic energy conversion and solar cell manufacture. For silicon wire to be used for solar device, well aligned wire arrays need to be fabricated vertically or horizontally. Macroscopic silicon wire arrays suitable for photovoltaic applications have been commonly grown by the vapor-liquid-solid (VLS) process using metal catalysts such as Au, Ni, Pt, Cu. In the case, the impurity issues inside wire originated from metal catalyst are inevitable, leading to lowering the efficiency of solar cell. To escape from the problem, the wires of purity of wafer are the best for high efficiency of photovoltaic device. The fabrication of wire arrays by the electrochemical etching of silicon wafer with photolithography can solve the contamination of metal catalyst. In this presentation, we introduce silicon wire arrays by electrochemical etching method and then fabrication methods of radial p-n junction wire array solar cell and the various merits compared with conventional silicon solar cells.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.5 no.1
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• pp.37-43
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• 1995

The proper choice of the solvent is a prerequisite for solution growth of silicon. In the present work, the temperature to dissolve at least 1 atomic% silicon was calculated in various molten solvents.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.233-233
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• 2010

It is important to form the n+ emitter layer for generating electric potential collecting EHP(Electron-Hole Pair). In this paper the formation on the n+ emitter layer of silicon wafer has been made with respect to uniformity of shallow diffusion from a liquid source. The starting material was crystalline silicon wafers of resistivity $0.5{\sim}3\{Omega}{\cdot}cm$, p-type, thickness $200{\mu}m$, direction[100]. The formation of n+ emitter layer from the liquid $POCl_3$ source was carried out for $890^{\circ}C$ in an ambient of $N_2:O_2$::10:1 by volume. And than each conditions are pre-deposition and drive-in time. It has been made uniformity of at least. so, the average of sheet resistance was about 0.12%. In this study, sheet resistance was measured by 4-point prove.

• Journal of the Korean Ceramic Society
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• v.49 no.1
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• pp.95-99
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• 2012

Silicon carbide ceramics are used for oxidation resistive coating films due to their excellent properties like high strength, good oxidation resistance, and good abrasion resistance, but they have poor formability and are prepared by vapor process which is complicated, costly, and sometimes hazardous. In this study, preparation of silicon carbide coating film by liquid process using polymer precursor was attempted. Coating film was prepared by dip coating on substrate followed by heat treatment in argon at $1200^{\circ}C$. By changing the dipping speed, the thickness was controlled. The effects of plasticizer, binder, or fiber addition on suppression of crack generation in the polymer and ceramic films were examined. It was found that fiber additives was effective for suppressing crack generation.