• Title/Summary/Keyword: Liquid Phase deposition

Search Result 90, Processing Time 0.027 seconds

Photodegradation of VOCs by Using TiO$_2$-Coated POF (광촉매가 코팅된 플라스틱 광섬유을 이용한 VOC 광분해반응)

  • Ha, Jin-Wook;Joo, Hyun-Ku
    • Journal of the Korea Academia-Industrial cooperation Society
    • /
    • v.4 no.3
    • /
    • pp.199-203
    • /
    • 2003
  • In this study plastic optical fibers (POFs) were considered as light-transmitting media and substrates for the potential use in photocatalytic environmental purification system. After the characteristics of POFs in terms of light transmittance and absorption were determined at the beginning, the further investigation was performed through the photocatalytic degradation of trichloroethylene (TCE), iso-propanol and etc. with TiO$_2$-coated optical fiber reactor systems (POFR). It is concluded that the use of POFs is preferred to quartz optical fibers (QOFs) since the advantages such as ease of handling, lower cost, relatively reasonable light attenuation at the wavelength of near 400nm can be obtained. Various geometrical reactor shapes have been constructed and applied for the last one and half years. For the use of POF in water phase treatment, however, more detailed scientific and engineering aspects should be envisaged. This case requires a suitable mixture to obtain more stable and innocuous immobilization of photocatalyst on POF. To overcome this disadvantage, metal-organic chemical vapor deposition (MOCVD) was conducted in a fluidized bed to deposit thin films of titania on glass and alumina beads. Those can be used as photocatalysis for the removal of pollutants especially in liquid phases.

  • PDF

Preparation of Carbon Nanofibers by Catalytic CVD and Their Purification

  • Lim, Jae-Seok;Lee, Seong-Young;Park, Sei-Min;Kim, Myung-Soo
    • Carbon letters
    • /
    • v.6 no.1
    • /
    • pp.31-40
    • /
    • 2005
  • The carbon nanofibers (CNFs) were synthesized through the catalytic decomposition of hydrocarbons in a quartz tube reactor. The CNFs prepared from $C_3H_8$ at $550^{\circ}C$ was selected as the purification sample due to the higher content of impurity than that prepared from other conditions. In this study, we carried out the purification of CNFs by oxidation in air or carbon dioxide after acid treatment, and investigated the influence of purification parameters such as kind of acid, concentration, oxidation time, and oxidation temperature on the structure of CNFs. The metal catalysts could be easily eliminated from the prepared CNFs by liquid phase purification with various acids and it was verified by ICP analysis, in which, for example, Ni content decreased from 2.51% to 0.18% with 8% nitric acid. However, the particulate carbon and heterogeneous fibers were not removed from the prepared CNFs by thermal oxidation in air and carbon dioxide. This result can be explained by that the direction of graphene sheet in CNFs is vertical to the fiber axis and the CNFs are oxidized at about the similar rate with the impurity carbon.

  • PDF

Fabrication of Nd-Substituted Bi4Ti3O12 Thin Films by Metal Organic Chemical Vapor Deposition and Their Ferroelectrical Characterization

  • Kim, Hyoeng-Ki;Kang, Dong-Kyun;Kim, Byong-Ho
    • Journal of the Korean Ceramic Society
    • /
    • v.42 no.4
    • /
    • pp.219-223
    • /
    • 2005
  • A promising capacitor, which has conformable step coverage and good uniformity of thickness and composition, is needed to manufacture high-density non-volatile FeRAM capacitors with a stacked cell structure. In this study, ferroelectric $Bi_{3.61}Nd_{0.39}Ti_3O_{12}$ (BNdT) thin films were prepared on $Pt(111)/TiO_2/SiO_2/Si$ substrates by the liquid delivery system MOCVD method. In these experiments, $Bi(ph)_{3}$, $Nd(TMHD)\_{3}$ and $Ti(O^iPr)_{2}(TMHD)_{2}$ were used as the precursors and were dissolved in n-butyl acetate. The BNdT thin films were deposited at a substrate temperature and reactor pressure of approximately $600^{\circ}C$ and 4.8 Torr, respectively. The microstructure of the layered perovskite phase was observed by XRD and SEM. The remanent polarization value (2Pr) of the BNdT thin film was $31.67\;{\mu}C/cm^{2}$ at an applied voltage of 5 V.

A Study on the Genesis of Eonyang Amethyst Deposits (언양(彦陽) 자수정 광상(鑛床)의 성인(成因)에 관한 연구(硏究))

  • Youn, Seok-Tai;Park, Hee-In
    • Economic and Environmental Geology
    • /
    • v.27 no.4
    • /
    • pp.335-343
    • /
    • 1994
  • The Eonyang amethyst deposits are composed of vug quartz emplaced in the Eonyang granites of Mesozoic Cretaceous age. The Eonyang granites are composed of biotite granite, porphyritic biotite granite, aplite and miarolitic granite. The petrochemical data of the Eonyang granites show the trend of subalkaline magma, calc-alkaline magma, I-type granitoid and magnetite series. The vug quartz show the characteristic growth zoning (white quartz-smoky quartz-amethyst) from wall side. Generally fluid inclusions in the vug quartz can be divided into four main types based on compositions (I-type: gas inclusion, II-type: liquid inclusion, III-type: polyphase inclusion, IV-type: liquid $CO_2$-bearing inclusion). Solid phase of polyphase inclusions are halite(NaCl), sylvite(KCl), hematite ($Fe_2O_3$) and unknown anisotropic solid. Homogenization temperatures inferred from the fluid inclusion study ranges from $440^{\circ}C$ to $485^{\circ}C$ in white quartz, from $227^{\circ}C$ to $384^{\circ}C$ in smoky quartz, from $133^{\circ}C$ to $186^{\circ}C$ in amethyst, respectively. Salinities of fluid inclusions in each mineralization stages ranges from 40 wt.% to 58 wt.% in white and smoky quartz, from 1.0 wt.% to 8.7 wt.% in amethyst respectively. A consideration of the pressure regime during vug quartz deposition based on the boiling evidence suggests lithostatic pressure of less than 72 bars. This range of pressure indicate that vug quartz lay at depth of 750 m below the surface at the during mineralization.

  • PDF

Electrochemical Behavior of Li-B Alloy Anode - Liquid Cadmium Cathode (LCC) System for Electrodeposition of Nd in LiCl-KCl

  • Kim, Gha-Young;Shin, Jiseon;Kim, Tack-Jin;Shin, Jung-Sik;Paek, Seungwoo
    • Journal of the Korean Electrochemical Society
    • /
    • v.18 no.3
    • /
    • pp.102-106
    • /
    • 2015
  • The performance of Li-B alloy as anode for molten salt electrolysis was firstly investigated. The crystalline phase of the prepared Li-B alloy was identified as $Li_7B_6$. The potential profile of Li-B alloy anode was monitored during the electrodeposition of $Nd^{3+}$ onto an LCC (liquid cadmium cathode) in molten LiCl-KCl salt at $500^{\circ}C$. The potential of Li-B alloy was increased from -2.0 V to -1.4 V vs. Ag/AgCl by increasing the applied current from 10 to $50mA{\cdot}cm^{-2}$. It was found that not only the anodic dissolution of Li to $Li^+$ but also the dissolution of the atomic lithium ($Li^0$) into the LiCl-KCl eutectic salt was observed, following the concomitant reduction of $Nd^{3+}$ by the $Li^0$ in Li-B alloy. It was expected that the direct reduction could be restrained by maintaining the anode potential higher that the deposition potential of neodymium.

Effective problem mitigation strategy of lithium secondary battery silicon anode utilized liquid precursor (에틸벤젠을 이용한 실리콘 산화물 음극재의 효과적인 카본 코팅 전략)

  • Sangryeol Lee;Seongsu Park;Sujong Chae
    • Journal of the Korean institute of surface engineering
    • /
    • v.56 no.1
    • /
    • pp.62-68
    • /
    • 2023
  • Silicon (Si) is considered as a promising substitute for the conventional graphite due to its high theoretical specific capacity (3579 mAh/g, Li15Si4) and proper working voltage (~0.3V vs Li+/Li). However, the large volume change of Si during (de)lithiation brings about severe degradation of battery performances, rendering it difficult to be applied in the practical battery directly. As a one feasible candidate of industrial Si anode, silicon monoxide (SiOx) demonstrates great electrochemical stability with its specialized strategy, downsized Si nanocrystallites surrounded by Li+ inactive buffer phase (Li2O and Li4SiO4). Nevertheless, SiOx inherently has the initial irreversible capacity and poor electrical conductivity. To overcome those issues, conformal carbon coating has been performed on SiOx utilizing ethylbenzene as the carbon precursor of chemical vapor deposition (CVD). Through various characterizations, it is confirmed that the carbon is homogeneously coated on the surface of SiOx. Accordingly, the carbon-coated SiOx from CVD using ethylbenzene demonstrates 73% of the first cycle efficiency and great cycle life (88.1% capacity retention at 50th cycle). This work provides a promising synthetic route of the uniform and scalable carbon coating on Si anode for high-energy density.

One step facile synthesis of Au nanoparticle-cyclized polyacrylonitrile composite films and their use in organic nano-floating gate memory applications

  • Jang, Seok-Jae;Jo, Se-Bin;Jo, Hae-Na;Lee, Sang-A;Bae, Su-Gang;Lee, Sang-Hyeon;Hwang, Jun-Yeon;Jo, Han-Ik;Wang, Geon-Uk;Kim, Tae-Uk
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2016.02a
    • /
    • pp.307.2-307.2
    • /
    • 2016
  • In this study, we synthesized Au nanoparticles (AuNPs) in polyacrylonitrile (PAN) thin films using a simple annealing process in the solid phase. The synthetic conditions were systematically controlled and optimized by varying the concentration of the Au salt solution and the annealing temperature. X-ray photoelectron spectroscopy (XPS) confirmed their chemical state, and transmission electron microscopy (TEM) verified the successful synthesis, size, and density of AuNPs. Au nanoparticles were generated from the thermal decomposition of the Au salt and stabilized during the cyclization of the PAN matrix. For actual device applications, previous synthetic techniques have required the synthesis of AuNPs in a liquid phase and an additional process to form the thin film layer, such as spin-coating, dip-coating, Langmuir-Blodgett, or high vacuum deposition. In contrast, our one-step synthesis could produce gold nanoparticles from the Au salt contained in a solid matrix with an easy heat treatment. The PAN:AuNPs composite was used as the charge trap layer of an organic nano-floating gate memory (ONFGM). The memory devices exhibited a high on/off ratio (over $10^6$), large hysteresis windows (76.7 V), and a stable endurance performance (>3000 cycles), indicating that our stabilized PAN:AuNPs composite film is a potential charge trap medium for next generation organic nano-floating gate memory transistors.

  • PDF

Fabrication and Its Characteristics of HgCdTe Infrared Detector (HgCdTe를 이용한 Infrared Detector의 제조와 특성)

  • 김재묵;서상희;이희철;한석룡
    • Journal of the Korea Institute of Military Science and Technology
    • /
    • v.1 no.1
    • /
    • pp.227-237
    • /
    • 1998
  • HgCdTe Is the most versatile material for the developing infrared devices. Not like III-V compound semiconductors or silicon-based photo-detecting materials, HgCdTe has unique characteristics such as adjustable bandgap, very high electron mobility, and large difference between electron and hole mobilities. Many research groups have been interested in this material since early 70's, but mainly due to its thermodynamic difficulties for preparing materials, no single growth technique is appreciated as a standard growth technique in this research field. Solid state recrystallization(SSR), travelling heater method(THM), and Bridgman growth are major techniques used to grow bulk HgCdTe material. Materials with high quality and purity can be grown using these bulk growth techniques, however, due to the large separation between solidus and liquidus line on the phase diagram, it is very difficult to grow large materials with minimun defects. Various epitaxial growth techniques were adopted to get large area HgCdTe and among them liquid phase epitaxy(LPE), metal organic chemical vapor deposition(MOCVD), and molecular beam epitaxy(MBE) are most frequently used techniques. There are also various types of photo-detectors utilizing HgCdTe materials, and photovoltaic and photoconductive devices are most interested types of detectors up to these days. For the larger may detectors, photovoltaic devices have some advantages over power-requiring photoconductive devices. In this paper we reported the main results on the HgCdTe growing and characterization including LPE and MOCVD, device fabrication and its characteristics such as single element and linear array($8{\times}1$ PC, $128{\times}1$ PV and 4120{\times}1$ PC). Also we included the results of the dewar manufacturing, assembling, and optical and environmental test of the detectors.

  • PDF

Fluorescence Behavior of Benzo[f]Quinoline Doped In Lpd Silica Thin Films

  • Mabuchi, Toshiaki;Suzuki, Satoshi;Nakajima, Tsuyoshi;Ino, Juichi;Takemura, Kazuo;Shimizu, Etsuro
    • Journal of Photoscience
    • /
    • v.5 no.3
    • /
    • pp.105-109
    • /
    • 1998
  • By using the liquid -phase-deposition (LPD) process, which has a potetnial of preparing organic inorganic composite materials, samples doped with benzo[f]quinoline (BfQ)into silica thia films wre prepared. We observed the fluorescene and fluorescene excitation spectra of the samples, as well as the fluorescence lifetimes and time-resoluved fluorescence spectra. The comparison of thefluorescence spectra in pH-controlled buffer solutions yields the results that the dominant species of BfQ in the LPD silica films is a protonated one. The fluorescence band assigned to a hydrogen-bonded species was observed on the samples prepared from the dipping solutions of 3 and 2 M hexafluorosilicic acid. The band assignment was confirmed by the fluorescence lifetime measurement. The FT-IR M hexaflurosilicic acid. The band assignment was confirmed by the flurescence lifetime meausurement. The FT-IR data proved the existence of included water in silica films prepared from the LPD process. The appearance of the band corresponding to the hydrogen-bonded species within LPD silica phases was explained by the proesence of included water. Depending on the preparation conditions of LPD silica films, the band assigned to protonated species shows bad shifts in a wavenumber region between the peak of hydrogen-bonded and typical protonated species. This implies that there is some distribution of steric conformation of protonated species of BfQ interacting with adsorbing sites of LPD silica. The time -resolved fluorescence spectra suggest that some relaxation process is involved in the conformation of BfQ doped into the solid phase of LPD silica.

  • PDF

Refinement of Gd2O3 inclusions in the GdBa2Cu3O7-δ films fabricated by the RCE-DR process

  • Park, I.;Oh, W.J.;Lee, J.H.;Moon, S.H.;Yoo, S.I.
    • Progress in Superconductivity and Cryogenics
    • /
    • v.20 no.4
    • /
    • pp.46-49
    • /
    • 2018
  • To improve in-field critical current densities ($J_c$) of $GdBa_2Cu_3O_{7-{\delta}}$ (GdBCO) coated conductors(CCs) fabricated by the reactive co-evaporation by deposition and reaction (RCE-DR) process, employing the nominal composition of Gd:Ba:Cu=1:1:2.5, we tried to refine the $Gd_2O_3$ particles trapped in the GdBCO superconducting matrix. For this purpose, we carefully selected the processing conditions on the stability phase diagram of GdBCO for this composition. By lowering the growth temperature of $Gd_2O_3$ in the liquid, we could refine the average particle size of $Gd_2O_3$ particles trapped in the GdBCO matrix and also achieve the zero-resistive transition temperatures ($T_{c,zero}$) of 92.3~94.2 K. Unfortunately, however, it was unsuccessful to achieve enhanced in-field $J_c$ values from these samples because of an air-contamination of the amorphous precursor film before its conversion into crystalline GdBCO film, suggesting that any exposure of the amorphous precursor film to air is fatal in obtaining high performance GdBCO CCs via the RCE-DR process.