• Title/Summary/Keyword: Line mask

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Boundary Depth Estimation Using Hough Transform and Focus Measure (허프 변환과 초점정보를 이용한 경계면 깊이 추정)

  • Kwon, Dae-Sun;Lee, Dae-Jong;Chun, Myung-Geun
    • Journal of the Korean Institute of Intelligent Systems
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    • v.25 no.1
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    • pp.78-84
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    • 2015
  • Depth estimation is often required for robot vision, 3D modeling, and motion control. Previous method is based on the focus measures which are calculated for a series of image by a single camera at different distance between and object. This method, however, has disadvantage of taking a long time for calculating the focus measure since the mask operation is performed for every pixel in the image. In this paper, we estimates the depth by using the focus measure of the boundary pixels located between the objects in order to minimize the depth estimate time. To detect the boundary of an object consisting of a straight line and a circle, we use the Hough transform and estimate the depth by using the focus measure. We performed various experiments for PCB images and obtained more effective depth estimation results than previous ones.

다채널 표면 플라즈몬 공명 영상장치를 이용한 자기조립 단분자막의 표면 분석

  • Pyo, Hyeon-Bong;Sin, Yong-Beom;Yun, Hyeon-Cheol
    • 한국생물공학회:학술대회논문집
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    • 2003.04a
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    • pp.74-78
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    • 2003
  • Multi-channel images of 11-MUA and 11-MUOH self-assembled monolayers were obtained by using two-dimensional surface plasmon resonance (SPR) absorption. Patterning process was simplified by exploiting direct photo-oxidation of thiol bonding (photolysis) instead of conventional photolithography. Sharper images were resolved by using a white light source in combination with a narrow bandpass filter in the visible region, minimizing the diffraction patterns on the images. The line profile calibration of the image contrast caused by different resonance conditions at each points on the sensor surface (at a fixed incident angle) enables us to discriminate the monolayer thickness in sub-nanometer scale. Furthermore, there is no signal degradation such as photo bleaching or quenching which are common in the detection methods based on the fluorescence.

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Effects of Process Conditions on Electrode Patterning by Screen Printing Method (스크린 인쇄법의 공정 조건이 전극 패턴 균일성에 미치는 영향)

  • Lee, Na-Young;Kim, Dong-Chul;Yeo, Dong-Hun;Lee, Joo-Sung;Yoon, Sang Ok;Shin, Hyo-Soon;Lee, Joon-Hyung
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.33 no.5
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    • pp.355-359
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    • 2020
  • In this study, image analysis and surface roughness measurements using an optical microscope are presented as a method to quantitatively evaluate the results of screen printing. Using this method, the squeegee speed, which is the printing process condition, and the printability of the electrode according to the screen mesh were evaluated. Increasing the squeegee speed in the printing process acts as a process element that increases the line width precision of the printed electrode and lowers the surface roughness of the printed surface. Furthermore, the edge roughness, which indicates the clarity of printing, was not significantly affected by the speed of the squeegee during printing. The print thickness increases in proportion to the squeegee speed, but is largely dependent on the screen thickness.

AWGN Removal using Edge Information of Local Mask (국부 마스크의 에지 정보를 이용한 AWGN 제거)

  • Kwon, Se-Ik;Kim, Nam-Ho
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.21 no.1
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    • pp.130-136
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    • 2017
  • Recently, as demand of video processor unit rapidly increases, excellent quality of the video has been required. However, generally, video data occurs the quick flame of video due to various external causes in process of acquisition, treatment, and transmission, and major cause of the quick flame of the video is known as the noise. There are various kinds of noise, which are added to the video, AWGN is a typical one. Thus, this thesis suggested algorithm that treats in three methods by scale of the edge through using edge information of local masks. In case that edge pixel is big, it applied spatial weighting according to equation of straight line about direction of edge pixel. In case that edge pixel is middle, it suggested algorithm with spatial weighting filter and average filter, and for the smooth territory, it suggested algorithm that treats with average filter.

Influence of Wet Chemistry Damage on the Electrical and Structural Properties in the Wet Chemistry-Assisted Nanopatterned Ohmic Electrode (Wet chemistry damage가 Nanopatterned p-ohmic electrode의 전기적/구조적 특성에 미치는 영향)

  • Lee, Young-Min;Nam, Hyo-Duk;Jang, Ja-Soon;Kim, Sang-Mook;Baek, Jong-Hyub
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.150-150
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    • 2008
  • 본 연구에서는 Wet chemistry damage가 Nanopatterned p-ohmic electrode에 미치는 영향을 연구하였다. Nanopattern은 Metal clustering을 이용하여, P-GaN와 Ohmic형성에 유리한 Pd을 50$\AA$ 적층한 후 Rapid Thermal Annealing방법으로 $850^{\circ}C$, $N_2$분위기에서 3min열처리를 하여 Pd Clustering mask 를 제작하였다. Wet etching은 $85^{\circ}C$, $H_3PO_4$조건에서 시간에 따라 Sample을 Dipping하는 방법으로 시행하였다 Ohmic test를 위해서 Circular - Transmission line Model 방법을 이용하였으며, Atomic Force Microscopy과 Parameter Analyzer로 Nanopatterned GaN surface위에 형성된 Ni/ Au Contact에서의 전기적 분석과, 표면구조분석을 시행하였다. AFM결과 Wet처리시간에 따라서 Etching형상 및 Etch rate이 영향을 받는 것이 확인되었고, Ohmic test에서 Wet chemistry처리에 의한 Tunneling parameter와 Schottky Barrier Height가 크게 증/감함을 관찰하였다. 이러한 결과들은 Wet처리에 의해서 발생된 Defect가 GaN의 표면과 하부에서 발생되며, Deep acceptor trap 및 transfer거동과 밀접한 관련이 있음을 확인 할 수 있었다. 보다 자세한 Transport 및 Wet chemical처리영향에 관한 형성 Mechanism은 후에 I-V-T, I-V, C-V, AFM결과 들을 활용하여 발표할 예정이다.

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Skew correction of face image using eye components extraction (눈 영역 추출에 의한 얼굴 기울기 교정)

  • Yoon, Ho-Sub;Wang, Min;Min, Byung-Woo
    • Journal of the Korean Institute of Telematics and Electronics B
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    • v.33B no.12
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    • pp.71-83
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    • 1996
  • This paper describes facial component detection and skew correction algorithm for face recognition. We use a priori knowledge and models about isolated regions to detect eye location from the face image captured in natural office environments. The relations between human face components are represented by several rules. We adopt an edge detection algorithm using sobel mask and 8-connected labelling algorith using array pointers. A labeled image has many isolated components. initially, the eye size rules are used. Eye size rules are not affected much by irregular input image conditions. Eye size rules size, and limited in the ratio between gorizontal and vertical sizes. By the eye size rule, 2 ~ 16 candidate eye components can be detected. Next, candidate eye parirs are verified by the information of location and shape, and one eye pair location is decided using face models about eye and eyebrow. Once we extract eye regions, we connect the center points of the two eyes and calculate the angle between them. Then we rotate the face to compensate for the angle so that the two eyes on a horizontal line. We tested 120 input images form 40 people, and achieved 91.7% success rate using eye size rules and face model. The main reasons of the 8.3% failure are due to components adjacent to eyes such as eyebrows. To detect facial components from the failed images, we are developing a mouth region processing module.

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A Single Field Deinterlacing Algorithm Using Edge Map in the Image Block (영상 블록에서의 에지 맵을 이용한 단일 필드 디인터레이싱 알고리듬)

  • Kang, Kun-Hwa;Jeon, Gwang-Gil;Jeong, Je-Chang
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.34 no.4C
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    • pp.355-362
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    • 2009
  • A new intra field deinterlacing algorithm with edge map in the image block is introduced. Conventional deinterlacing methods usually employ edge-based line average algorithm within pixel-by-pixel approach. However, it is sensitive to variation of intensity. To reduce this shortcoming, we proposed edge direction vector computed by edge map, and also its interpolation technique. We first introduce an edge direction vector, which is computed by Sobel mask, so that finer resolution of the edge direction can be acquired. The proposed edge direction vector oriented deinterlacer operates by identifying small pixel variations in five orientations, while weighted averaging to estimate missing pixel. According to the edge direction of the direction vector, we calculate weights on each edge direction. These weight values multiplied by the candidate deinterlaced pixels in order to successively build approximations of the deinterlaced sequence.

Algorithm Development of a Visibility Monitoring Technique Using Digital Image Analysis

  • Pokhrel, Rajib;Lee, Hee-Kwan
    • Asian Journal of Atmospheric Environment
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    • v.5 no.1
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    • pp.8-20
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    • 2011
  • Atmospheric visibility is one of the indicators used to evaluate the status of air quality. Based on a conceptual definition of visibility as the maximum distance at which the outline of the selected target can be recognized, an image analysis technique is introduced here and an algorithm is developed for visibility monitoring. Although there are various measurement techniques, ranging from bulk and precise instruments to naked eye observation techniques, each has their own limitations. In this study, a series of image analysis techniques were introduced and examined for in-situ application. An imaging system was built up using a digital camera and was installed on the study sites in Incheon and Seoul separately. Visual range was also monitored by using a dual technology visibility sensor in Incheon and transmissometer in Seoul simultaneously. The Sobel mask filter was applied to detect the edge lines of objects by extracting the high frequency from the digital image. The root mean square (RMS) index of variation among the pixels in the image was substantially correlated with the visual ranges in Incheon and Seoul with correlations of $R^2$=0.88 and $R^2$=0.71, respectively. The regression line equations between the visual range and the RMS index in Incheon and Seoul were VR=$2.36e^{0.46{\times}(RMS)}$ and VR=$3.18e^{0.15{\times}(RMS)}$, respectively. It was also confirmed that the fine particles ($PM_{2.5}$) have more impacts to the impairment of visibility than coarse particles.

Real-Time Spacer Etch-End Point Detection (SE-EPD) for Self-aligned Double Patterning (SADP) Process

  • Han, Ah-Reum;Lee, Ho-Jae;Lee, Jun-Yong;Hong, Sang-Jeen
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.436-437
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    • 2012
  • Double patterning technology (DPT) has been suggested as a promising candidates of the next generation lithography technology in FLASH and DRAM manufacturing in sub-40nm technology node. DPT enables to overcome the physical limitation of optical lithography, and it is expected to be continued as long as e-beam lithography takes place in manufacturing. Several different processes for DPT are currently available in practice, and they are litho-litho-etch (LLE), litho-etch-litho-etch (LELE), litho-freeze-litho-etch (LFLE), and self-aligned double patterning (SADP) [1]. The self-aligned approach is regarded as more suitable for mass production, but it requires precise control of sidewall space etch profile for the exact definition of hard mask layer. In this paper, we propose etch end point detection (EPD) in spacer etching to precisely control sidewall profile in SADP. Conventional etch EPD notify the end point after or on-set of a layer being etched is removed, but the EPD in spacer etch should land-off exactly after surface removal while the spacer is still remained. Precise control of real-time in-situ EPD may help to control the size of spacer to realize desired pattern geometry. To demonstrate the capability of spacer-etch EPD, we fabricated metal line structure on silicon dioxide layer and spacer deposition layer with silicon nitride. While blanket etch of the spacer layer takes place in inductively coupled plasma-reactive ion etching (ICP-RIE), in-situ monitoring of plasma chemistry is performed using optical emission spectroscopy (OES), and the acquired data is stored in a local computer. Through offline analysis of the acquired OES data with respect to etch gas and by-product chemistry, a representative EPD time traces signal is derived. We found that the SE-EPD is useful for precise control of spacer etching in DPT, and we are continuously developing real-time SE-EPD methodology employing cumulative sum (CUSUM) control chart [2].

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Metal-Semiconductor Contact Behavior of Solution-Processed ZnSnO Thin Film Transistors (용액법으로 제작된 ZnSnO 박막트랜지스터의 전극 물질에 따른 계면 접촉특성 연구)

  • Jeong, Young-Min;Song, Keun-Kyu;Woo, Kyoo-Hee;Jun, Tae-Hwan;Jung, Yang-Ho;Moon, Joo-Ho
    • Korean Journal of Materials Research
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    • v.20 no.8
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    • pp.401-407
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    • 2010
  • We studied the influence of different types of metal electrodes on the performance of solution-processed zinc tin oxide (ZTO) thin-film transistors. The ZTO thin-film was obtained by spin-coating the sol-gel solution made from zinc acetate and tin acetate dissolved in 2-methoxyethanol. Various metals, Al, Au, Ag and Cu, were used to make contacts with the solution-deposited ZTO layers by selective deposition through a metal shadow mask. Contact resistance between the metal electrode and the semiconductor was obtained by a transmission line method (TLM). The device based on an Al electrode exhibited superior performance as compared to those based on other metals. Kelvin probe force microscopy (KPFM) allowed us to measure the work function of the oxide semiconductor to understand the variation of the device performance as a function of the types metal electrode. The solution-processed ZTO contained nanopores that resulted from the burnout of the organic species during the annealing. This different surface structure associated with the solution-processed ZTO gave a rise to a different work function value as compared to the vacuum-deposited counterpart. More oxygen could be adsorbed on the nanoporous solution-processed ZTO with large accessible surface areas, which increased its work function. This observation explained why the solution-processed ZTO makes an ohmic contact with the Al electrode.