• 조명전기설비학회논문지
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• 제20권7호
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• pp.38-45
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• 2006

초전도전류제한기(SFCL)는 전력계통내 적용시 계통보호를 보다 향상시킬 수 있는 방안으로써 수초이내에 신속하게 사고전류를 제한한다. 이러한 SFCL중 자속구속형 전류제한기의 설계구조는 자속구속리액터인 하나의 철심에 1차측과 2차측 코일이 병렬로 결선되어 있다. 또한 전류제한소자인 YBCO박막과 2차측 코일을 직렬로 결선하여 설치장소의 조건에 따라 인덕턴스와 2차측 코일의 극성방향으로 과도전류 크기를 조절할 수 있다. 이러한 동작특성은 철심을 자속매개체로 적용되기 때문에 철심조건에 따른 성능평가실험은 필수적이다. 가극결선에서 전원전압을 200[Vrms] 인가시 피크전류는 폐루프가 30.71[A], 개루프가 32.01[A]까지 상승됨에 따라 초기과도 응답특성은 폐루프가 유리하였다. 하지만, 소자에 발생되는 전압이 폐루프가 220.14[V], 개루프가 142.73[V]까지 상승함에 따라, 폐루프 철심구조시 전류제한소자의 부담이 가중됨을 알 수 있었다. 결과적으로 자속구속형 SFCL의 전력계통내 적용 시 각각의 철심구조에 따른 다양한 운전특성을 적절히 설계시 장점을 극대화 할 수 있을 것이다.

• 대한의용생체공학회:학술대회논문집
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• 대한의용생체공학회 1996년도 춘계학술대회
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• pp.84-87
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• 1996

We have been developed electrohydraulic left ventricular assist device and done various in vivo evaluation on the device. Through the in vivo experiment conducted from Jan. 23, 1996 to Feb. 8, we could have experience of long-term evaluation fur the first time. The sheep used in this experiment had survived for 16 days. We used new actuator with reduced size and linear motion guide replacing oil box and ball bearings. Also, we used improved blood chamber with reduced size, reduced weight facilitating fixing the chamber to animal's body, and polymer sac having improved folding pattern. Against suction problem, we used absolute pressure limiter only. Motor current for driving this new actuator was not much higher than older one. Effective stroke volume was about 48 cc. Thrombosis was found around top area and peripheral boundary of the sac and valves. There was no sign of damage from suction problem in the atrium observed at autopsy. Main cause of death was presumed to be progressive formation of thrombosis in the cannulae. In this paper, the results of this experiment are documented.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.100-101
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• 2012

The plasma damage free and room temperature processedthin film deposition technology is essential for realization of various next generation organic microelectronic devices such as flexible AMOLED display, flexible OLED lighting, and organic photovoltaic cells because characteristics of fragile organic materials in the plasma process and low glass transition temperatures (Tg) of polymer substrate. In case of directly deposition of metal oxide thin films (including transparent conductive oxide (TCO) and amorphous oxide semiconductor (AOS)) on the organic layers, plasma damages against to the organic materials is fatal. This damage is believed to be originated mainly from high energy energetic particles during the sputtering process such as negative oxygen ions, reflected neutrals by reflection of plasma background gas at the target surface, sputtered atoms, bulk plasma ions, and secondary electrons. To solve this problem, we developed the NBAS (Neutral Beam Assisted Sputtering) process as a plasma damage free and room temperature processed sputtering technology. As a result, electro-optical properties of NBAS processed ITO thin film showed resistivity of $4.0{\times}10^{-4}{\Omega}{\cdot}m$ and high transmittance (>90% at 550 nm) with nano- crystalline structure at room temperature process. Furthermore, in the experiment result of directly deposition of TCO top anode on the inverted structure OLED cell, it is verified that NBAS TCO deposition process does not damages to the underlying organic layers. In case of deposition of transparent conductive oxide (TCO) thin film on the plastic polymer substrate, the room temperature processed sputtering coating of high quality TCO thin film is required. During the sputtering process with higher density plasma, the energetic particles contribute self supplying of activation & crystallization energy without any additional heating and post-annealing and forminga high quality TCO thin film. However, negative oxygen ions which generated from sputteringtarget surface by electron attachment are accelerated to high energy by induced cathode self-bias. Thus the high energy negative oxygen ions can lead to critical physical bombardment damages to forming oxide thin film and this effect does not recover in room temperature process without post thermal annealing. To salve the inherent limitation of plasma sputtering, we have been developed the Magnetic Field Shielded Sputtering (MFSS) process as the high quality oxide thin film deposition process at room temperature. The MFSS process is effectively eliminate or suppress the negative oxygen ions bombardment damage by the plasma limiter which composed permanent magnet array. As a result, electro-optical properties of MFSS processed ITO thin film (resistivity $3.9{\times}10^{-4}{\Omega}{\cdot}cm$, transmittance 95% at 550 nm) have approachedthose of a high temperature DC magnetron sputtering (DMS) ITO thin film were. Also, AOS (a-IGZO) TFTs fabricated by MFSS process without higher temperature post annealing showed very comparable electrical performance with those by DMS process with $400^{\circ}C$ post annealing. They are important to note that the bombardment of a negative oxygen ion which is accelerated by dc self-bias during rf sputtering could degrade the electrical performance of ITO electrodes and a-IGZO TFTs. Finally, we found that reduction of damage from the high energy negative oxygen ions bombardment drives improvement of crystalline structure in the ITO thin film and suppression of the sub-gab states in a-IGZO semiconductor thin film. For realization of organic flexible electronic devices based on plastic substrates, gas barrier coatings are required to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency flexible AMOLEDs needs an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}gm^{-2}day^{-1}$. The key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required (under ${\sim}10^{-6}gm^{-2}day^{-1}$) is the suppression of nano-sized defect sites and gas diffusion pathways among the grain boundaries. For formation of high quality single inorganic gas barrier layer, we developed high density nano-structured Al2O3 single gas barrier layer usinga NBAS process. The NBAS process can continuously change crystalline structures from an amorphous phase to a nano- crystalline phase with various grain sizes in a single inorganic thin film. As a result, the water vapor transmission rates (WVTR) of the NBAS processed $Al_2O_3$ gas barrier film have improved order of magnitude compared with that of conventional $Al_2O_3$ layers made by the RF magnetron sputteringprocess under the same sputtering conditions; the WVTR of the NBAS processed $Al_2O_3$ gas barrier film was about $5{\times}10^{-6}g/m^2/day$ by just single layer.