• 한국전자파학회논문지
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• 제23권7호
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• pp.791-796
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• 2012

RF 리미터(limiter)는 원하지 않는 신호로부터 수신단을 보호하기 위해 사용되는 소자로서, 임계값 이상의 모든 입력신호에 대해 일정한 출력을 제공한다. 다이오드를 사용하는 RF 리미터는 작은 신호는 통과시키는 반면, 어떤 임계값 이상의 신호는 감쇄시켜서 전달한다. 현대의 레이더 시스템에서 수신기를 보호하기 위해 사용되는 RF 리미터는 새로운 간섭 위협이나 복잡한 전자파 환경의 도전으로부터 극복할 수 있는 절대 필요한 역할을 수행한다. 본 논문은 고출력 RF 리미터를 구현하기 위해 PIN 다이오드와 Limit 다이오드의 조합으로 구성된 회로를 제안한다. PIN 다이오드는 스위치의 격리도(isolation) 특성을 이용하는 것과 같이 다이오드의 격리도 특성을 이용하는 개념을 적용한다. S-대역에서 200 us 펄스폭을 갖는 2 kW RF 리미터를 개발하였다. 그 측정 결과는 예측한 값과 잘 일치함을 알 수 있다.

• 한국안전학회지
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• 제19권1호
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• pp.66-71
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• 2004

This paper describes that the improved effects on the ignition limit are studied by parallel safety components for propane-air 5.25vol.% mixture gas in low voltage inductive circuits. The experimental devices are used in the IEC type spark ignition test apparatus. The improved effects on the ignition limit are respectively obtained as the maximum rising rate of 650%, 1,080% by composing parallel circuits between inductance and safety components (condenser and diode) as compared with disconnecting inductance with the safety components. The more values of inductance the higher improved effects of ignition limit rise. This improving method for the ignition limit is not concerned with the safety components. Diode appears to effect greatly better than condenser. It is considered that the result can be used for not only data for researches and development of intrinsically safe explosion-proof machines which are applied equipment and detectors used in hazardous areas but also for data for its equipment tests.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 추계학술대회 논문집 전력기술부문
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• pp.277-279
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• 2005

Generally, It was used to use a unit of a Large regularity in developing Large Capacity Converter System of the electric power. Lager a capacity of a unit of regularity, more expensive cost of it. So, normally, We overcome the limit of a proper form of an electricity semiconductor which be used in application field of Large capacity electricity conversion system through the Composition of Multi-level Circuit or Dual-Mode or parallel switch. but some problem is discussed. Using parallel RC-diode circuit instead of Large Capacity diode, We implemented a circuit that it overcome the limit of a regularity with dealing current distributed by parallel RC-diode circuit.

• Journal of the Optical Society of Korea
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• 제17권1호
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• pp.22-26
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• 2013

The author analyzes the luminous efficiency of the phosphor-conversion white light-emitting diode (LED) that consists of a blue LED chip and a yellow phosphor. A theoretical model is derived to find the relation between luminous efficiency (LE) of a white LED, wall-plug efficiency (WPE) of a blue LED chip, and the phosphor absorption ratio of blue light. The presented model enables to obtain the theoretical limit of LE and the lower bound of WPE. When the efficiency model is applied to the measured results of a phosphor-conversion white LED, the limit theoretical value of LE is obtained to be 261 lm/W. In addition, for LE of 88 lm/W at 350 mA, the lower bound of WPE in the blue LED chip is found to be ~34%. The phosphor absorption ratio of blue light was found to have an important role in optimizing the luminous efficiency and colorimetric properties of phosphor-conversion white LEDs.

• 한국공작기계학회논문집
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• 제13권4호
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• pp.30-36
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• 2004

The development of LD(Laser Diode) tester and its control system based on the graphical programming language(LabVIEW) is addressed. The ill tester is used to check the optic power and the optic spectrum of the LD Chip. The emitter size of LD chip and the diameter of the Detector(optic fiber and photo diode) are very small, therefore the test device needs high accuracy. But each motion part of the test device could not accomplish high accuracy due to the limit of the mechanical performance. So, an image processing with machine vision is proposed to compensate for the error. By adopting our method we can reduce the error of position within $\pm$5$\mu\textrm{m}$.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2003년도 춘계학술대회 논문집
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• pp.1663-1667
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• 2003

This thesis is on tile development of LD(Laser Diode) chip tester and the control system based on graphical programming language(LabVIEW) to control the equipment. The LD chip tester is used to test the optic power and the optic spectrum of the LD Chip. The emitter size of LD chip and the diameter of the receiver(optic fiber) are very small. Therefore, in order to test each chip precisely, this tester needs high accuracy. However each motion part of the tester could not accomplish hish accuracy due to the limit of the mechanical performance. Hence. an image processing with machine vision was carried out in order to compensate for the error. and also a load test was carried out so as to reduce tile impact of load on chip while the probing motion device is working. The obtained results were within ${\pm}$5$\mu\textrm{m}$ error.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 센서 박막재료 반도체 세라믹
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• pp.208-212
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• 2003

Silicon transient voltage suppressors (TVSs) are clamping devices that limit voltage spikes by low impedance avalanche breakdown of a rugged silicon PN junction. They are used to protect sensitive components from electrical overstress such as that caused by induces lightning, inductive load switching and electrostatic discharge. In this paper, we present static and dynamic characteristics of TVS diode using thermal analysis simulation software. And also, it is presented that the thermal dissipation characteristics of TVS diode in the transient state.

• 전자통신동향분석
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• 제36권3호
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• pp.23-33
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• 2021

Two main technologies of III-V/Si laser diode for optical communication, direct epitaxial growth, and wafer bonding were studied. Until now, the wafer bonding has been vigorously studied and seems promising for the ideal III-V/Si laser. However, the wafer bonding process is still complicated and has a limit of mass production. The development of a concise and innovative integration method for silicon photonics is urgent. In the future, the demand for high-speed data processing and energy saving, as well as ultra-high density integration, will increase. Therefore, the study for the hetero-junction, which is that the III-V compound semiconductor is directly grown on Si semiconductor can overcome the current limitations and may be the goal for the ideal III-V/Si laser diode.

• 대한전자공학회논문지
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• 제10권6호
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• pp.45-55
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• 1973

본 논문은 한개의 터널다이오드로 구성된 시간에 무관한 비선형 회로를 논한다 부저항 소자로 구성된 비선형 회로의 해를 구하기 전에 비선형 소자의 정특성을 어떤 함수로 표시할 필요가 있다. 최소 자승법에 의해서 정특성을 표현하는 근사 다항식 커브를 구했다. 비선형 회로를 해석하기 위해서는 우선 그 회로에 관한 상태방정식이 설정되면 프레딕터·코렉터 방법에 의해서 해를 구할수 있다. 최종적으로, 비선형 회로의 안정도와 발진 조건을 논하기 위해서 limit cycle을 점철했다.

• 대한전기학회논문지:전기기기및에너지변환시스템부문B
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• 제48권10호
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• pp.544-554
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• 1999

Multi-level inverters are now receiving widespread interest form the industrial drives for high power variable speed applications. Especially, for the high power variable speed applications, a diode clamped multi-level inverter has been widely used. However, it has the inherent problem that the voltage of the link capacitors fluctuates. This paper describes a voltage control scheme effectively to suppress the DC-link potential fluctuation for a diode clamped four-level inverter. The current to flow from/into the each link capacitor is analyzed and the operation limit is obtained when a conventional SVPWM is used. To overcome the operation limit, a modified carrier-based SVPWM is proposed. Various simulation and experiment results are presented to verify the proposed voltage control scheme for DC-link voltage balancing.