• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.23 no.7
• /
• pp.791-796
• /
• 2012

A RF limiter is a component to protect the receiver front end from undesired signal. A RF limiter is a key component whose output is constant level for all inputs above a critical value. A RF limiter use a diode to pass signals of low power while attenuating those above some threshold. A RF limiter for receiver protection in modern radar systems is playing a vital role in order to meet challenges of new interference threats and complicated electromagnetic environments. This paper proposed a new circuit for high power RF limiter whose structure is the combination of the PIN diode and Limit diode. PIN diode take a use of its isolation characteristics which act as a switch does. A 2 kW RF limiter with 200 us pulse width at S-band was developed. It shows good agreements between estimated value and measured results.

• Journal of the Korean Society of Safety
• /
• v.19 no.1
• /
• pp.66-71
• /
• 2004

This paper describes that the improved effects on the ignition limit are studied by parallel safety components for propane-air 5.25vol.% mixture gas in low voltage inductive circuits. The experimental devices are used in the IEC type spark ignition test apparatus. The improved effects on the ignition limit are respectively obtained as the maximum rising rate of 650%, 1,080% by composing parallel circuits between inductance and safety components (condenser and diode) as compared with disconnecting inductance with the safety components. The more values of inductance the higher improved effects of ignition limit rise. This improving method for the ignition limit is not concerned with the safety components. Diode appears to effect greatly better than condenser. It is considered that the result can be used for not only data for researches and development of intrinsically safe explosion-proof machines which are applied equipment and detectors used in hazardous areas but also for data for its equipment tests.

• Proceedings of the KIEE Conference
• /
• 2005.11b
• /
• pp.277-279
• /
• 2005

Generally, It was used to use a unit of a Large regularity in developing Large Capacity Converter System of the electric power. Lager a capacity of a unit of regularity, more expensive cost of it. So, normally, We overcome the limit of a proper form of an electricity semiconductor which be used in application field of Large capacity electricity conversion system through the Composition of Multi-level Circuit or Dual-Mode or parallel switch. but some problem is discussed. Using parallel RC-diode circuit instead of Large Capacity diode, We implemented a circuit that it overcome the limit of a regularity with dealing current distributed by parallel RC-diode circuit.

• Journal of the Optical Society of Korea
• /
• v.17 no.1
• /
• pp.22-26
• /
• 2013

The author analyzes the luminous efficiency of the phosphor-conversion white light-emitting diode (LED) that consists of a blue LED chip and a yellow phosphor. A theoretical model is derived to find the relation between luminous efficiency (LE) of a white LED, wall-plug efficiency (WPE) of a blue LED chip, and the phosphor absorption ratio of blue light. The presented model enables to obtain the theoretical limit of LE and the lower bound of WPE. When the efficiency model is applied to the measured results of a phosphor-conversion white LED, the limit theoretical value of LE is obtained to be 261 lm/W. In addition, for LE of 88 lm/W at 350 mA, the lower bound of WPE in the blue LED chip is found to be ~34%. The phosphor absorption ratio of blue light was found to have an important role in optimizing the luminous efficiency and colorimetric properties of phosphor-conversion white LEDs.

• Transactions of the Korean Society of Machine Tool Engineers
• /
• v.13 no.4
• /
• pp.30-36
• /
• 2004

The development of LD(Laser Diode) tester and its control system based on the graphical programming language(LabVIEW) is addressed. The ill tester is used to check the optic power and the optic spectrum of the LD Chip. The emitter size of LD chip and the diameter of the Detector(optic fiber and photo diode) are very small, therefore the test device needs high accuracy. But each motion part of the test device could not accomplish high accuracy due to the limit of the mechanical performance. So, an image processing with machine vision is proposed to compensate for the error. By adopting our method we can reduce the error of position within $\pm$5$\mu\textrm{m}$.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2003.06a
• /
• pp.1663-1667
• /
• 2003

This thesis is on tile development of LD(Laser Diode) chip tester and the control system based on graphical programming language(LabVIEW) to control the equipment. The LD chip tester is used to test the optic power and the optic spectrum of the LD Chip. The emitter size of LD chip and the diameter of the receiver(optic fiber) are very small. Therefore, in order to test each chip precisely, this tester needs high accuracy. However each motion part of the tester could not accomplish hish accuracy due to the limit of the mechanical performance. Hence. an image processing with machine vision was carried out in order to compensate for the error. and also a load test was carried out so as to reduce tile impact of load on chip while the probing motion device is working. The obtained results were within ${\pm}$5$\mu\textrm{m}$ error.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.05c
• /
• pp.208-212
• /
• 2003

Silicon transient voltage suppressors (TVSs) are clamping devices that limit voltage spikes by low impedance avalanche breakdown of a rugged silicon PN junction. They are used to protect sensitive components from electrical overstress such as that caused by induces lightning, inductive load switching and electrostatic discharge. In this paper, we present static and dynamic characteristics of TVS diode using thermal analysis simulation software. And also, it is presented that the thermal dissipation characteristics of TVS diode in the transient state.

• Electronics and Telecommunications Trends
• /
• v.36 no.3
• /
• pp.23-33
• /
• 2021

Two main technologies of III-V/Si laser diode for optical communication, direct epitaxial growth, and wafer bonding were studied. Until now, the wafer bonding has been vigorously studied and seems promising for the ideal III-V/Si laser. However, the wafer bonding process is still complicated and has a limit of mass production. The development of a concise and innovative integration method for silicon photonics is urgent. In the future, the demand for high-speed data processing and energy saving, as well as ultra-high density integration, will increase. Therefore, the study for the hetero-junction, which is that the III-V compound semiconductor is directly grown on Si semiconductor can overcome the current limitations and may be the goal for the ideal III-V/Si laser diode.

• Journal of the Korean Institute of Telematics and Electronics
• /
• v.10 no.6
• /
• pp.45-55
• /
• 1973

This paper discusses the nonlinear time-invarient circuit composed of a tunnel diode. Prior to determine the solution of the nonlinear network which has negative resistance elements, the static characteristics of the nonlinear resistance elements need to be represented by function. Polynomial curve fitting is discussed to represent the static characteristies by least squares approximation. In order to solve the nonlinear network, the state equations for the networks are set up and solved by prediction corrector method. Finally, the limit cycle is plotted to discuss the stability of the nonlinear network and the oscillation condition.

• The Transactions of the Korean Institute of Electrical Engineers B
• /
• v.48 no.10
• /
• pp.544-554
• /
• 1999

Multi-level inverters are now receiving widespread interest form the industrial drives for high power variable speed applications. Especially, for the high power variable speed applications, a diode clamped multi-level inverter has been widely used. However, it has the inherent problem that the voltage of the link capacitors fluctuates. This paper describes a voltage control scheme effectively to suppress the DC-link potential fluctuation for a diode clamped four-level inverter. The current to flow from/into the each link capacitor is analyzed and the operation limit is obtained when a conventional SVPWM is used. To overcome the operation limit, a modified carrier-based SVPWM is proposed. Various simulation and experiment results are presented to verify the proposed voltage control scheme for DC-link voltage balancing.