• Title/Summary/Keyword: Light-emitting polymer

Search Result 297, Processing Time 0.028 seconds

In-situ Thermally Curable Hyper-branched 10H-butylphenothiazine

  • Jo, Mi-Young;Lim, Youn-Hee;Ahn, Byung-Hyun;Lee, Gun-Dae;Kim, Joo-Hyun
    • Bulletin of the Korean Chemical Society
    • /
    • v.33 no.2
    • /
    • pp.492-498
    • /
    • 2012
  • A hyper branched 10-butylphenothiazine with in-situ thermally curable methacrylate (1,3,5-tris-[$\{$10-Butyl-3-(4-(2-methyl-acryloyloxy)-phenyl)-7-yl-10H-phenothiazine$\}$]-benzene, (tris-PTMA)) was synthesized successfully. From the TGA thermogram of tris-PTMA was thermally stable up to $336^{\circ}C$. In the first heating scan of DSC thermogram, tris-PTMA showed glass transition temperature (Tg) at $140^{\circ}C$ and broad endothermic process in the region of $144-179^{\circ}C$, which is thermally curing temperature. In the second heating process, $T_g$ exhibited at $158.7^{\circ}C$ and endothermic process was not observed. Thermally cured tris-PTMA showed no big change in the UV-visible spectrum after washing with organic solvent such as methylene chloride, chloroform, toluene, indicating that thermally cured film was very good solvent resistance. Thermally cured tris-PTMA was electrochemically stable and the HOMO energy level of tris-PTMA was -5.54 eV. The maximum luminance efficiency of double layer structured polymer light-emitting diode based on in-situ thermally cured tris-PTMA was 0.685 cd/A at 16.0 V, which was higher than that of the device without thermally cured tris-PTMA (0.348 cd/A at 15.0 V).

Fabrication of Polymer Composite with Enhanced Insulation and Mechanical Properties using Aluminum Borate Nanowhiskers (알루미늄 보레이트 나노휘스커를 이용한 향상된 절연성 및 기계적 특성을 가지는 고분자 복합체 제작)

  • Junhyeok Choi;Sangin Lee;Kiho Song;Taekyung Kim;Changui Ahn
    • Journal of Powder Materials
    • /
    • v.30 no.4
    • /
    • pp.356-362
    • /
    • 2023
  • Inorganic-organic composites find extensive application in various fields, including electronic devices and light-emitting diodes. Notably, encapsulation technologies are employed to shield electronic devices (such as printed circuit boards and batteries) from stress and moisture exposure while maintaining electrical insulation. Polymer composites can be used as encapsulation materials because of their controllable mechanical and electrical properties. In this study, we propose a polymer composite that provides good electrical insulation and enhanced mechanical properties. This is achieved by using aluminum borate nanowhiskers (ABOw), which are fabricated using a facile synthesis method. The ABOw fillers are created via a hydrothermal method using aluminum chloride and boric acid. We confirm that the synthesis occurs in various morphologies based on the molar ratio. Specifically, nanowhiskers are synthesized at a molar ratio of 1:3 and used as fillers in the composite. The fabricated ABOw/epoxy composites exhibit a 48.5% enhancement in mechanical properties, similar to those of pure epoxy, while maintaining good electrical insulation.

Synthesis and Characterization of Thermally Cross-linkable Hole Transporting Material Based on Poly(p-phenylenevinylene) Derivative (열경화가 가능한 poly(p-phenylenevinylene)계 정공전달 물질의 합성 및 특성)

  • Choi, Jiyoung;Lee, Bong;Kim, Joo Hyun
    • Applied Chemistry for Engineering
    • /
    • v.19 no.3
    • /
    • pp.299-303
    • /
    • 2008
  • A thermally cross-linkable polymer, poly[(2,5-dimethoxy-1,4-phenylenevinylene)-alt-(1,4-phenylenevinylene)] (Cross-PPV), was synthesized by the Heck coupling reaction. In order for the polymer to be cross-linkable, 20 mol% excess divinylbenzene was added. The chemical structure of Cross-PPV and thermally crosslinked Cross-PPV were confirmed by FT-IR spectroscopy. From the FT-IR, UV-Vis, and PL spectral data, thermally crosslinked Cross-PPV was insoluble in common organic solvents. The HOMO and LUMO energy level of thermally cross-linked Cross-PPV were estimated -5.11 and -2.56 eV, respectively, which were determined by the cyclic voltammetry and UV-Vis spectroscopy. From the energy level data, one can easily notice that thermally crosslinked Cross-PPV can be used for hole injection layer effectively. Bilayer structured device (ITO/crosslinked Cross-PPV/PM-PPV/Al) was fabricated using poly(1,4-phenylenevinylene-(4-dicyanomethylene-4H-pyran)-2,6-vinylene-1,4-phenylenevinylene-2,5-bis(dodecyloxy)-1,4-phenylenevinylene (PM-PPV) as the emitting layer, which have HOMO and LUMO energy levels of -5.44 eV and -3.48 eV, respectively. The bilayered device had much enhanced the maximum efficiency (0.024 cd/A) and luminescence ($45cd/m^2$) than those of a single layer device (ITO/PM-PPV/Al, 0.003 cd/A, $3cd/m^2$). The enhanced performance originated from that fact that cross-linked Cross-PPV facilitatse the hole injection to the emissive layer and the injected hole and electron from ITO and Al are recombined in emitting layer (PM-PPV) effectively.

Low-Temperature Processed Thin Film Barrier Films for Applications in Organic Electronics (유기전자소자 적용을 위한 저온 공정용 배리어 박막 연구)

  • Kim, Junmo;An, Myungchan;Jang, Youngchan;Bae, Hyeong Woo;Lee, Wonho;Lee, Donggu
    • Journal of Sensor Science and Technology
    • /
    • v.28 no.6
    • /
    • pp.402-406
    • /
    • 2019
  • Recently, semiconducting organic materials have been spotlighted as next-generation electronic materials based on their tunable electrical and optical properties, low-cost process, and flexibility. However, typical organic semiconductor materials are vulnerable to moisture and oxygen. Therefore, an encapsulation layer is essential for application of electronic devices. In this study, SiNx thin films deposited at process temperatures below 150 ℃ by plasma-enhanced chemical vapor deposition (PECVD) were characterized for application as an encapsulation layer on organic devices. A single structured SiNx thin film was optimized as an organic light-emitting diode (OLED) encapsulation layer at process temperature of 80 ℃. The optimized SiNx film exhibited excellent water vapor transmission rate (WVTR) of less than 5 × 10-5 g/㎡·day and transmittance of over 87.3% on the visible region with thickness of 1 ㎛. Application of the SiNx thin film on the top-emitting OLED showed that the PECVD process did not degrade the electrical properties of the device, and the OLED with SiNx exhibited improved operating lifetime

High Efficiency Green Phosphorescent Organic Light Emitting Devices using the Emission Layer of (TCTA/TCTA1/3TAZ2/3/TAZ) : Ir(ppy)3 ((TCTA/TCTA1/3TAZ2/3/TAZ) : Ir(ppy)3 발광층을 이용한 고효율 녹색 인광소자)

  • Jang, Ji-Geun;Shin, Sang-Baie;Shin, Hyun-Kwan;Kim, Won-Ki;Ryu, Sang-Ouk;Chang, Ho-Jung;Gong, Myoung-Seon;Lee, Jun-Yeob
    • Korean Journal of Materials Research
    • /
    • v.18 no.7
    • /
    • pp.347-351
    • /
    • 2008
  • We have fabricated and evaluated newNew high high-efficiency green green-light light-emitting phosphorescent devices with an emission layer of [$TCTA/TCTA_{1/3}TAZ_{2/3}/TAZ$] : $Ir(ppy)_3$ were fabricated and evaluated, and compared the electroluminescence characteristics of these devices were compared with the conventional phosphorescent devices with emission layers of ($TCTA_{1/3}TAZ_{2/3}$) : $Ir(ppy)_3$ and (TCTA/TAZ) : $Ir(ppy)_3$. The current density, luminance, and current efficiency of the a device with an emission layer of ($80{\AA}-TCTA/90^{\circ}{\AA}-TCTA_{1/3}TAZ_{2/3}/130{\AA}-TAZ$) : 10%-$Ir(ppy)_3$ were $95\;mA/cm^2$, $25000\;cd/m^2$, and 27 cd/A at an applied voltage of 10 V, respectively. The maximum current efficiency was 52 cd/A under the a luminance value of $400\;cd/m^2$. The peak wavelength and FWHM (FWHM (full width at half maximum) in the electroluminescence spectral were 513 nm and 65 nm, respectively. The color coordinate was (0.30, 0.62) on the CIE (Commission Internationale de I'Eclairage) chart. Under the a luminance of $15000\;cd/m^2$, the current efficiency of the a device with an emission layer of ($80{\AA}-TCTA/90{\AA}-TCTA_{1/3}TAZ_{2/3}/130{\AA}-TAZ$) : 10%-$Ir(ppy)_3$ was 34 cd/A, which has beenshowed an improvement of improved 1.7 and 1.4 times compared to those of the devices with emission layers of ($300{\AA}-TCTA_{1/3}TAZ_{2/3}$) : 10%-$Ir(ppy)_3$ and ($100{\AA}-TCTA/200{\AA}$-TAZ) : 10%-$Ir(ppy)_3$, respectively.

Preparation of Polymer Light Emitting Diodes with PVK:Ir(ppy)$_3$ Emission Layer (PVK:Ir(ppy)$_3$ 발광층을 가지는 고분자 발광다이오드의 제작)

  • Lee, Hak-Min;Gong, Su-Cheol;Choi, Jin-Eun;Chang, Ho-Jung
    • Proceedings of the KAIS Fall Conference
    • /
    • 2008.11a
    • /
    • pp.201-203
    • /
    • 2008
  • ITO 투명전극을 양극으로 사용하고 PEDOT:PSS 고분자 물질위에 PVK와 Ir(ppy)3를 각각 host와 dopant로 사용하여 고분자 발광다이오드를 제작하였다. 전자 수송층의 역할로 TPBI, 음극으로 Al을 증착하여 최종적으로 ITO/PEDOT:PSS/PVK:Ir(ppy)3/TPBI/LiF/Al 구조를 갖는 녹색 인광 고분자 유기발광소자(PhPLED)를 제작하였다. 제작 된 소자의 발광부 dopant인 Ir(ppy)3도핑 농도에 따른 전기적 광학적 특성을 평가하였다. PVK:Ir(ppy)3를 host와 dopant system으로 dopant Ir(ppy)3의 도핑 양을 0.5 wt%에서2.5 wt%까지 씩 변화시키면서 최적의 농도를 찾고자 하였다. TPBI를 전자 수송층으로 사용 하였을 경우 최대 휘도는 약 8600 cd/$m^2$ (at 8V)이고, 전류밀도는 337mA/$cm^2$ 를 나타내었다.

  • PDF

Characterization of the Polymer-based Organic Light Emitting Diode having Inorganic Thin Film Passivation Layer (무기 박막형 보호층을 이용한 고분자 유기발광 다이오드의 특성 평가)

  • Kim, Hoon;Kim, Kwang-Ho;Kim, Jae-Kyung;Lee, Yun-Hi;Han, Jeong-In;Do, Lee-Mi;Ju, Byeong-Kwon
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.16 no.1
    • /
    • pp.60-64
    • /
    • 2003
  • In this study, the inorganic thin-film passivation layer was newly adopted to protect the organic layer from moisture and oxygen. Using the electron beam evaporation system, the various kinds of inorganic thin-films were deposited onto the organic layer and their interface properties between organic and inorganic layer were investigated. In this investigation, the MgO layer showed the most suitable properties, and based on this result, the time dependent emission properties were estimated for the OLED with and without passivation layer. In this experiment, we can see that the time-dependent emission properties of MgO passivated OLED had longer life-time compared to non-passivated OLED. Therefore, we can consider that the MgO thin film is one of the most suitable candidates for the thin-film passivation layer of OLED.

Optical Properties of Poly(N-arylcarbazole-alt-aniline) Copolymers For Polymer Light Emitting Devices

  • Wang, Hui;Ryu, Jeong-Tak;Kim, Yeon-Bo;Kwon, Young-Hwan
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2006.05a
    • /
    • pp.55-60
    • /
    • 2006
  • Thermally stable and solution-processable poly(N-arylcarbazole-alt-aniline) copolymers with high structural integrity were synthesized in good yields via palladium-catalyzed polycondensation of aniline with corresponding N-arylcarbazole monomers such as N-(2-ethylhexyloxyphenyl)-3,6-dibromocarbazole,bis[6-bromo-N-(2-ethylhexyloxyphenyl)carbazole-3-yl] and N-(4-(2-ethylhexyl)-3,5-dibromomethylene-phenyl) carbazole, respectively. The optical and electrochemical properties of these copolymers were measured and compared with those of poly(N-alkylcarbazole-alt-aniline) copolymer. All synthesized poly(N-arylcarbazole-alt-aniline) copolymers showed maximum UV-Vis absorption peaks at around 300 nm in THF solution, and exhibited maximum photoluminescence peaks in the blue emission range from 430 to 460 nm. It was also found that poly(N-arylcarbazole-alt-aniline) copolymers had wider band gap energy than poly(N-alkylcarbazole-alt-aniline) copolymer.

  • PDF

A Study on pricess characteristics of $ZrO_2$ films prepared on poly-ethlene naphthalate by using Facing tagets sputtering system (대향타겟식 스퍼터링 방법에 의해 PEN 기판위에 성막된 $ZrO_2$ 박막의 공정 특성에 관한 연구)

  • Cho, Do-Hyun;Kwon, Oh-Jung;Wang, Tae-Hyun;Kim, Ji-Hwan;Park, Sung-Hwan;Hong, Woo-Pyo;Kim, Hwa-Min;Kim, Jong-Jae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2008.06a
    • /
    • pp.423-424
    • /
    • 2008
  • A facing target sputtering (FTS) equiment is fabricated and its process characteristics are investigated to search for the possibility of applications to film passivation system for organic light emitting diodes (OLEDs). We report that the FTS system can prepare a high quality $ZrO_2$ films with a dense micro structure and an excellent uniformity less than 5% and a high transmittance over an average 80% in the visible range. We suggest that the FTS is one of the suitable deposition techniques for the thin film passivation layer of OLEDs and the gas barrier layer of polymer substrate.

  • PDF

Synthesis and Luminescent Properties of Tetrafluorophenyl Containing Poly(p-phenylenevinylene) Derivatives

  • Ahn, Taek
    • Transactions on Electrical and Electronic Materials
    • /
    • v.16 no.3
    • /
    • pp.162-167
    • /
    • 2015
  • To investigate the effect of fluoro groups substitution on poly(p-phenylenevinylene) derivatives, poly(2,3,5,6- tetrafluoro-p-phenylenevinylene-alt-N-ethylhexyl-3,6-carbazolevinylene), PCTF-PPV, and poly[2,3,5,6-tetrafluoro-p-phenylenevinylene-alt-2-methoxy-5-(2-ethylhexyloxy)-p-phenylenevinylene], PMTF-PPV, were synthesized by the well-known Wittig condensation polymerization process. To compare the influences of fluoro groups, no fluoro groups containing model polymers, poly(p-phenylenevinylene-alt-N-ethylhexyl-3,6-carbazolevinylene), PCPPPV and poly[p-phenylenevinylene-alt-2-methoxy-5-(2-ethylhexyloxy)-p-phenylenevinylene], p-PMEH-PPV, were also synthesized. The resulting polymers were completely soluble in common organic solvents and exhibited good thermal stability up to 300℃. The polymers showed UV-visible absorbance and photoluminescence (PL) in the ranges of 259~452 nm and 500~580 nm, respectively. The tetrafluorophenyl containing PCTF-PPV and PMTF-PPV showed relatively red-shifted PL peaks at 521 nm and 580 nm, respectively, compared to that of non-fluoro groups containing polymers (PCP-PPV: 500 nm and p-PMEH-PPV: 539 nm). The single-layer light-emitting diode was fabricated in a configuration of ITO/polymer/Al. Electroluminescene (EL) emissions of PCP-PPV, PCTF-PPV, p-PMEH-PPV and PMTF-PPV were shown at 507, 524, 556, and 616 nm, respectively.