• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1153-1156
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• 2005

A backlight for large-area LCD (Liquid Crystal Display)-TVs has been developed using Light Emitting Diodes (LEDs). Performances of the backlight and the methods driving the LEDs are introduced in this research. A spectral relationship between the LEDs and the color filters of a panel were investigated as well. In order to realize a CRT like dynamic effect, the area-focused luminance control (AFLC) technology was adopted in developing the backlight. Thus, a possibility of applying the LEDs to the backlight for large-area LCD-TVs was systematically proved.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1408-1409
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• 2005

Organic light-emitting diodes (OLEDs) of metalsemiconductor-metal (MSM) structure have been fabricated by using m-MTDATA [4,4',4"-tris (3-methylphenylphenylamino) triphenylamine] as a hole-injection layer (HIL). The m-MTDATA is shown to be an effective hole-injecting material for the OLED, in that the insertion of m-MTDATA greatly reduces the roughness of anode surface and improves the device performance.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1487-1490
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• 2005

This study proposes a controller with the techniqu e of voltage -compensated driver for producing grayscaled pictures on passive matrix organic light emitting diodes (PMOLEDs) panels; especially, the controller overcomes the problem of luminance nonuniformity on displaying pictures. Because the controller is a voltage type driver, the output impedance of the driver is much less than that of the current-type driver. Hence, the controller provides a better electron-optical response than those of traditional current drivers. An area compensated look-up table (ACLUT) is designed in data feeding paths for removing luminance non-uniformity; thus, the proposed controller provides nearly 95% luminance uniformity.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.901-902
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• 2003

Three-color organic light-emitting diodes (OLEDs) of metal-semiconductor-metal (MSM) structure have been favricated by using m-MTDATA [4,4',4"-tris (3-methylphenylphenylamino) triphenylamine] as hole injection layer(HIL). The mMTDATA is shown to be an effective hole injecting material, in that the insertion of mMTDATA greatly reduces the roughness of anode surface and improves the device performance. Red, green and blue OLEDs were fabricated, and their color coordinates in CIE chromaticity were found to be (0.600, 0.389), (0.240, 0.525), and (0.171, 0.171), respectively. The luminous efficiencies of the fabricated OLEDs were 1.4 lm/W at 106 $cd/m^{2}$ for red, 1.4 lm/W at 100 $cd/m^{2}$ for green, and 2.0 lm/W at 104 $cd/m^{2}$ for blue.

• Journal of Information Display
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• v.12 no.4
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• pp.219-222
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• 2011

Iridium-(III)-bis[(4,6-di-fluorophenyl)-pyridinate-N,$C^2$' ]picolinate-based blue phosphorescent organic light-emitting diodes with different electron transport materials were fabricated. Each electron transport material had different electron mobilities and triplet energies. The device with 1,3,5-tri(m-pyrid-3-yl-phenyl)benzene had the highest external quantum efficiency (20.1%) and luminous current efficiency (33.1 cd/A) due to its high electron mobility and triplet energy. The operational stability of each device was also compared with that of the others. The device with 2,2',2"(1,3,5-benzenetriyl)tris-(1-phenyl-1H-benzimidazole) was found to have a longer lifetime than the other devices.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.12
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• pp.1143-1147
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• 2005

In this study, we report an improved efficiency of Organic light emitting diodes(OLEDs), using $UV/O_3$ treated anode and different cathode. We investigated the efficiency of OLEDs by $UV/O_3$ treatment of ITO surface. We Performed $UV/O_3$ treatment and found that $UV/O_3$ treatment enhanced the performance of OLEDs. The fundamental structure of the OLEDs was ITO $anode/{\alpha}-NPD/Alq_3/Al$ or Li:Al cathode. The Li:Al can improve the OLEDs efficiency dramatically in cathode because it has lower work function than Al. Current-voltage, Luminance-voltage characteristics and luminance efficiency were measured at room temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.543-546
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• 2004

Bias and frequency-dependent impedance is a technique for the investigation of complex conductivity. At low frequency, complex impedance is dominated by resistive component, and at high frequency by capacitive component. We are going to present the results of the bias and frequency-dependent complex impedance in the device structure of $ITO/Alq_3/Al$ in the temperature range between 10K and 300k. And we will show to change radius of Cole-Cole plot. It will be decrease resistance by temperature. Also equivalent electrical circuit and dielectric relaxation can be accomplished by using the complex impedance analysis.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.1098-1101
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• 2003

Complex impedances with frequency and voltage variation were analyzed in ITO/$Alq_3$/Al device structure at thickness 100 nm and 200 nm of $Alq_3$, respectively. At low frequency, complex impedance is mostly expressed by resistive component, and at the high frequency by capacitive component. Also, we have evaluated resistance, capacitance and permittivity.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.141-141
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• 2010

ZnS:Mn yellow phosphors doped with Cu for white light emitting diodes were synthesized by solid state reaction method. Photoluminescence excitation spectra originated from $Mn^{2+}$ were ranged from 450 nm to 500 nm. The yellow emission at around 580 nm was associated with $^4T_1{\rightarrow}^6A_1$ transition of $Mn^{2+}$ ions in ZnS:Mn,Cu phosphors. The highest photoluminescence intensity of the phosphors under 405 nm excitation was obtained at Cu concentration of 0.02 mol%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.52-54
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• 2008

The authors investigated the InGaN/GaN multi-quantum well blue light emitting diodes with the implements of the photonic crystals fabricated at the top surface of p-GaN layer or the bottom interface of n-GaN layer. The top photonic crystals result in the lattice-dependent photoluminescence spectra for the blue light emitting diodes, which have a wavelength of 450nm. However, the bottom photonic crystal shows a big shift of the photoluminescence peak from 444 nm to 504 nm and played as a role of quality enhancement for the crystal growth of GaN thin film. The micro-Raman spectroscopy shows the improved epitaxial quality of GaN thin film.