• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.4
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• pp.454-461
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• 2015

Light enhancement of GaN based light emitting diodes (LEDs) have been investigated by texturing the top p-GaN surface. Nano-textured LEDs have been fabricated using self-assembled Ni nano mask during dry etching process. Experimental results were further compared with simulation data. Three types of LEDs were fabricated: Conventional (planar LED), Surface nano-porous (porous LED) and Surface nano-cluster (cluster LED). Compared to planar LED there were about 100% and 54% enhancement of light output power for porous and cluster LED respectively at an injection current of 20 mA. Moreover, simulation result showed consistency with experimental result. The increased probability of light scattering at the nano-textured GaN-air interface is the major reason for increasing the light extraction efficiency.

• Current Optics and Photonics
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• v.6 no.3
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• pp.227-235
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• 2022

To investigate the aging-related physiological functions of organic light-emitting diodes (OLEDs), we examined mRNA expression changes in aging-related genes due to oxidative stress inhibition by 630-nm red light OLEDs. As a result of irradiating 630-nm OLED with an intensity of 5 mW/cm² for 15 min, the viability of dermal fibroblasts significantly increased by 1.3-fold. In addition, reactive oxygen species generated by H₂O₂ were significantly reduced about 4.9-fold by irradiation with 630-nm OLED. Quantitative reverse-transcription polymerase chain reaction results showed that 630-nm OLEDs altered aging-related gene mRNA expression levels through antioxidant activity. The mRNA expression levels of matrix metalloproteinase1 (MMP1) and MMP9 decreased significantly, by about 2.2- and 2.5-fold, compared to the control group, whereas those of collagen, type I, and alpha 1 increased significantly, by 4.9-fold. The mRNA expression levels of cancer suppression genes p16 and p53 in dermal fibroblasts were also significantly reduced by 630-nm OLED irradiation, by about 1.4- and three-fold, respectively, compared to the control. Overall, it was confirmed that 630-nm OLED irradiation lowered the level of ROS formation induced by H₂O₂ in dermal fibroblasts, and that this antioxidant effect could regulate the mRNA expression levels of aging- and tumor suppression-related genes. This study shows a link between 630-nm OLED irradiation and anti-aging physiological functions such as antioxidant function, and suggests the potential of OLEDs as a useful light source for skin care.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.11
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• pp.896-900
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• 2010

Electrical properties of organic light-emitting diodes were studied in a device with 7,7,8,8-tetracyano-quinodimethane (TCNQ) to see how the TCNQ affects on the device performance. Since the TCNQ has a high electron affinity, it is used for a charge-transport and injection layer. We have made a reference device in a structure of ITO(170 nm)/TPD(40 nm)/$Alq_3$(60 nm)/LiF(0.5 nm)/Al(100 nm). And two types of devices were manufactured. One type of device is the one made by doping 5 and 10 vol% of TCNQ to N,N'-diphenyl-N,N'-di(m-tolyl)-benzidine (TPD) layer. And the other type is the one made with TCNQ layer inserted in between the ITO anode and TPD organic layer. Organic layers were formed by thermal evaporation at a pressure of $10^{-6}$ torr. It was found that for the TCNQ doped devices, turn-on voltage of the device was reduced by about 20 % and the current efficiency was improved by about three times near 6 V. And for devices with TCNQ layer inserted in between the ITO anode and TPD layer, it was found that the current efficiency was improved by more than three times even though there was not much change in turn-on voltage.

• Journal of the Korean Applied Science and Technology
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• v.19 no.1
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• pp.68-72
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• 2002

We have seen the effects of buffer layer in organic light-emitting diodes(OLEDs) using poly(N-vinylcarbazole)(PVK) depending on a concentration of PVK. Polymer PVK buffer layer was made using spin casting technique. Two device structures were fabricated; one is ITO/TPD/$Alq_{3}$/Al as a reference, and the other is ITO/PVK/TPD/$Alq_{3}$/Al to see the effects of buffer layer in organic light-emitting diodes. Current-voltage-luminance characteristics and an external quantum efficiency were measured with a variation of spin-casting rpm speeds and PVK concentration. We have obtained an improvement of external quantum efficiency by a factor of four when the PVK concentration is 0.1wt% is used. The improvement of efficiency is expected due to a function of hole-blocking of PVK in OLEDs.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1470-1473
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• 2007

We have demonstrated the optimization of white organic light-emitting diodes with two separated emissive layers using a blue fluorescent and a red phosphorescent dopant. The maximum luminous efficiency of the devices showed 7.93, 9.70, 11.8, and 14.3 cd/A. The $CIE_{xy}$ coordinates also showed (x = 0.33, y = 0.36), (x = 0.33, y = 0.35), (x =0.31, y = 0.35), and (x = 0.29, y = 0.36) at 6V, respectively.

• Transactions on Electrical and Electronic Materials
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• v.6 no.5
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• pp.221-224
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• 2005

To overcome of poor electron injection in organic light-emitting diodes (OLEDs) with Al cathode, a thin layer of inorganic insulating materials, like as LiF, is inserted between an Al cathode and an organic electron transport layer. Though the device, mentioned above, improves both turn on voltage and luminescent properties, it has some problems like as thickness restriction, less than 2 nm, and difficulty of deposition control. On the other hand, Li organic complex, Liq, is less thickness restrictive and easy to deposit and it also enhances the performance of devices. This paper reports the improved electron injection on OLEDs with another I A group metal complex, Potassium quinolate (Kq), as an electron injection material. OLEDs with organic complexes showed improved turn-on voltage and luminous efficiency which are remarkably improved compared to OLEDs with Al cathode. Especially, OLEDs with Kq have longer life time than OLEDs with Liq.

• Korean Journal of Materials Research
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• v.21 no.1
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• pp.46-49
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• 2011

Bi co-doped ZnS:Mn,Bi yellow phosphors for white light emitting diodes were prepared by the conventional solidstate reaction method. The optical and structural properties of ZnS:Mn,Bi phosphors were investigated by x-ray diffraction, scanning electro microscopy and photoluminescence. ZnS:Mn,Bi phosphors showed XRD patterns of hexagonal structure. The photoluminescence of ZnS:Mn,Bi phosphors showed spectra extending from 480 to 700 nm, peaking at 580 nm. The photoluminescence of 580 nm in the ZnS:Mn,Bi phosphors was associated with the 4T1 ${\rightarrow}$ 6A1 transition of the Mn2+ ions. The highest photoluminescent intensity of the phosphors under 405 nm and 450 nm excitation was obtained at Bi concentration of 7mol%. The optimum mixing conditions with epoxy and yellow phosphor for white light emitting diodes were observed in a ratio of epoxy:yellow phosphor of 1:3.5. The CIE chromaticity of the white LED at the 1:3.5 ratio was X = 0.3454 and Y = 0.2449.

• Korean Journal of Materials Research
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• v.14 no.10
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• pp.749-753
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• 2004

In this study, we attempt to synthesize the $Sr_{3}SiO_{5}:Eu$ yellow phosphor by sol-gel technique. Based on the blue emitting diodes as primary light source, white light emitting diodes have been manufactured using the $Sr_{3}SiO_{5}:Eu$ yellow phosphor as the luminescent material. Luminescent efficiency of yellow phosphor as well as that of blue LED is very important factor to enhance the luminescent efficiency of white LED. In order to improve the luminescent efficiency, we have synthesized the $Sr_{3}SiO_{5}:Eu$ phosphor by sol-gel technique. To research optimum condition of gelation reaction, the ratio of $H_{2}O$ to TEOS was fixed as 60:1. When the drying temperature was at $100^{\circ}C$, emission intensity was better than at $70^{\circ}C$. The critical $Eu^{2+}$ concentration was estimated to be about 0.05 mol and sintering temperature at $1300^{\circ}C$ was indicated best emission intensity.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.1003-1006
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• 2003

We have investigated the effect of hole-injection buffer layer and cathodes in organic light-emitting diodes u sing poly (3,4-ethylenedioxythiophene) : poly (stylenesulfonate) (PEDOT: PSS) in a device structure of $ITO/PEDOT:PSS/TPD/Alq_3/Cathode$. Polymer PEDOT:PSS buffer layer was made using spin casting method. Current-voltage, luminance-voltage characteristics and efficiency of device were measured at room temperature with a variation of cathode materials. The device with LiF/Al cathode shows an improvement of external quantum efficiency approximately by a factor of ten compared to that of Al cathode only device. Our observation shows that the energy barrier-height in cathode side is important in improving the efficiency of the organic light-emitting diodes.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.298-299
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• 2008

Images of deposited layers of organic light-emitting diodes were observed by scanning-electron microscope (SEM). We were able to see a clear cross-sectional view of deposited layers. The SEM is a type of electron microscope that images the sample surface by scanning it with a high-energy beam of electrons in a raster scan pattern. A thickness of deposited layer measured by thickness monitor is close to a real value measured by a-step surface profiler within 5%. We were able to see a formation of domains of size about 50-100nm from a surface morphology of Al, and pin holes of size about 50nm.