• Title/Summary/Keyword: Light-emitting diode light quality

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Comparison with Growth Characteristics of Korean Melon (Cucumis melo var. makuwa) Grafted Seedlings in a Container Type Farm with LED Light and a Greenhouse under High Temperature Conditions (인공광 기반 컨테이너 육묘 시스템과 고온 조건의 플라스틱 온실 육묘에서 참외 접목묘 생육 특성 비교)

  • Wook Jin Song;Hee Woong Goo;Gyu Won Lee;Hyun Mun Kim;Kyoung Sub Park
    • Journal of Bio-Environment Control
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    • v.33 no.1
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    • pp.22-29
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    • 2024
  • This study was carried out to analyze the growth of grafted seedlings produced in a container-type farm system and a greenhouse to stably produce high-quality seedlings. For 14 days after graft-taking, the characteristics of korean melon grafted seedlings were compared by container farm and greenhouse. The container seedling system maintained a stable day/night temperature (25/20℃), relative humidity (70%), and light environment (PPFD 200µmol·m-2·s-1, photoperiod (16/8h). The difference between day and night temperature (DIF) was relatively large, with a mean temperature of 28.1/15.4℃ in the high-temperature greenhouse. Plant height of the korean melon seedling was longer in the greenhouse than in the closed seedling system, and the average SPAD value was 30.5 and 41.1 in the greenhouse and closed seedling system, respectively. To calculate the compactness of the graft seedlings, the shoot dry weight was divided by the plant height, and the value was 44.9±2.64 mg/cm and 24.4±1.56 mg/cm in the closed seedling system and the greenhouse treatment, respectively, 7 days after graft-taking. To produce high-quality seedlings during high-temperature or low-photo periods, it will be necessary to analyze the key factors that affect growth characteristics and transplanting growth and to verify the effects of the closed seedling system based on post-transplanting growth and yield.

Optical Characteristic on the Growth of Centric Diatom, Skeletonema costatum (Grev.) Cleve Isolated from Jinhae Bay in Korea (진해만에서 분리한 중심목 규조류 Skeletonema costatum(Grev.) Cleve의 성장에 미치는 광학적 특성)

  • Oh, Seok-Jin;Kang, In-Seok;Yoon, Yang-Ho;Yang, Han-Soeb
    • Korean Journal of Environmental Biology
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    • v.26 no.2
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    • pp.57-65
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    • 2008
  • The effects of light quality and irradiance on the growth of centric diatom, Skeletonema costatum (Jinhae Bay strain) were investigated in the laboratory. At 20$^{\circ}C$ and 30 psu, the irradiance-growth curve showed the maximum growth rate of 1.17 day$^{-1}$ with half-saturation photon flux density (PFD) (K$_s$) of 92.4 $\mu$mol photons $m^{-2}s^{-1}$, $\mu$=1.17 (I-5.28)/(I+81.8), (r=0.98), and a compensation PFD (I$_0$) was 5.28 $\mu$mol photons $m^{-2}s^{-1}$. The 10 equated to a depth of 3$\sim$5 m from March to May, 11 m in June and 4 m from July to September in Jinhae Bay. These responses suggested that irradiance at the depth near the surface layer in Jinhae Bay would provide favorable conditions for S. costatum. To assess the effects of light (i.e. wavelengths) on the growth, nine wave-lengths were used ranging from near ultraviolet to near-infrared supplied by light emitting diode. At an irradiance level of 25 $\mu$mol photons $m^{-2}s^{-1}$, S. costatum grew under wavelengths of 405, 470, 505, 525, 568 and 644 nm, but did not grow at 590 and 623 nm; whereas S. costatum grew at all wavelengths at 100 $\mu$mol photons $m^{-2}s^{-1}$. This implies that S. costatum is likely to grow well in enclosed water bodies where suspended particles absorbs most of the blue wavelengths, and dominated by yellow-orange wavelengths.

Study of Localized Surface Plasmon Polariton Effect on Radiative Decay Rate of InGaN/GaN Pyramid Structures

  • Gong, Su-Hyun;Ko, Young-Ho;Kim, Je-Hyung;Jin, Li-Hua;Kim, Joo-Sung;Kim, Taek;Cho, Yong-Hoon
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.184-184
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    • 2012
  • Recently, InGaN/GaN multi-quantum well grown on GaN pyramid structures have attracted much attention due to their hybrid characteristics of quantum well, quantum wire, and quantum dot. This gives us broad band emission which will be useful for phosphor-free white light emitting diode. On the other hand, by using quantum dot emission on top of the pyramid, site selective single photon source could be realized. However, these structures still have several limitations for the single photon source. For instance, the quantum efficiency of quantum dot emission should be improved further. As detection systems have limited numerical aperture, collection efficiency is also important issue. It has been known that micro-cavities can be utilized to modify the radiative decay rate and to control the radiation pattern of quantum dot. Researchers have also been interested in nano-cavities using localized surface plasmon. Although the plasmonic cavities have small quality factor due to high loss of metal, it could have small mode volume because plasmonic wavelength is much smaller than the wavelength in the dielectric cavities. In this work, we used localized surface plasmon to improve efficiency of InGaN qunatum dot as a single photon emitter. We could easily get the localized surface plasmon mode after deposit the metal thin film because lnGaN/GaN multi quantum well has the pyramidal geometry. With numerical simulation (i.e., Finite Difference Time Domain method), we observed highly enhanced decay rate and modified radiation pattern. To confirm these localized surface plasmon effect experimentally, we deposited metal thin films on InGaN/GaN pyramid structures using e-beam deposition. Then, photoluminescence and time-resolved photoluminescence were carried out to measure the improvement of radiative decay rate (Purcell factor). By carrying out cathodoluminescence (CL) experiments, spatial-resolved CL images could also be obtained. As we mentioned before, collection efficiency is also important issue to make an efficient single photon emitter. To confirm the radiation pattern of quantum dot, Fourier optics system was used to capture the angular property of emission. We believe that highly focused localized surface plasmon around site-selective InGaN quantum dot could be a feasible single photon emitter.

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Synthesis of Hexagonal β-Ni(OH)2 Nanosheet as a Template for the Growth of ZnO Nanorod and Microstructural Analysis (ZnO 나노 막대 성장을 위한 기판층으로서 hexagonal β상 Ni(OH)2 나노 시트 합성 및 미세구조 분석)

  • Hwang, Sung-Hwan;Lee, Tae-Il;Choi, Ji-Hyuk;Myoung, Jae-Min
    • Korean Journal of Materials Research
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    • v.21 no.2
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    • pp.111-114
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    • 2011
  • As a growth-template of ZnO nanorods (NR), a hexagonal $\beta-Ni(OH)_2$ nanosheet (NS) was synthesized with the low temperature hydrothermal process and its microstructure was investigated using a high resolution scanning electron microscope and transmission electron microscope. Zinc nitrate hexahydrate was hydrolyzed by hexamethylenetetramine with the same mole ratio and various temperatures, growth times and total concentrations. The optimum hydrothermal processing condition for the best crystallinity of hexagonal $\beta-Ni(OH)_2$ NS was determined to be with 3.5 mM at $95^{\circ}C$ for 2 h. The prepared $Ni(OH)_2$ NSs were two dimensionally arrayed on a substrate using an air-water interface tapping method, and the quality of the array was evaluated using an X-ray diffractometer. Because of the similarity of the lattice parameter of the (0001) plane between ZnO (wurzite a = 0.325 nm, c = 0.521 nm) and hexagonal $\beta-Ni(OH)_2$ (brucite a = 0.313 nm, c = 0.461 nm) on the synthesized hexagonal $\beta-Ni(OH)_2$ NS, ZnO NRs were successfully grown without seeds. At 35 mM of divalent Zn ion, the entire hexagonal $\beta-Ni(OH)_2$ NSs were covered with ZnO NRs, and this result implies the possibility that ZnO NR can be grown epitaxially on hexagonal $\beta-Ni(OH)_2$ NS by a soluble process. After the thermal annealing process, $\beta-Ni(OH)_2$ changed into NiO, which has the property of a p-type semiconductor, and then ZnO and NiO formed a p-n junction for a large area light emitting diode.

The properties of AlGaN epi layer grown by HVPE (HVPE에 의해 성장된 AlGaN epi layer의 특성)

  • Jung, Se-Gyo;Jeon, Hun-Soo;Lee, Gang-Seok;Bae, Seon-Min;Yun, Wi-Il;Kim, Kyoung-Hwa;Yi, Sam-Nyung;Yang, Min;Ahn, Hyung-Soo;Kim, Suck-Whan;Yu, Young-Moon;Cheon, Seong-Hak;Ha, Hong-Ju
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.22 no.1
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    • pp.11-14
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    • 2012
  • The AlGaN layer has direct wide bandgaps ranging from 3.4 to 6.2 eV. Nowadays, it is becoming more important to fabricate optical devices in an UV region for the many applications. The high quality AlGaN layer is necessary to establish the UV optical devices. However, the growth of AlGaN layer on GaN layer is difficult due to the lattice mismatch and difference thermal expansion coefficient between GaN layer and AlGaN layer. In this paper, we attempted to grow the LED structure on GaN template by mixed-source HVPE method with multi-sliding boat system. We tried to find the optical and lattice transition of active layer by control the Al content in mixed-source. For the growth of epi layer, the HCl and $NH_3$ gas were flowed over the mixed-source and the carrier gas was $N_2$. The temperature of source zone and growth zone was stabled at 900 and $1090^{\circ}C$, respectively. After the growth, we performed the x-ray diffraction (XRD) and electro luminescence (EL) measurement.

Effect of RED and FAR-RED LEDs on the Fruit Quality of 'Hongro'/M.26 Apple (적색과 초적색 LEDs 보광이 '홍로'/M.26 사과의 과실품질에 미치는 영향)

  • Kang, Seok-Beom;Song, Yang-Yik;Park, Moo-Yong;Kweon, Hun-Joong
    • Korean Journal of Environmental Agriculture
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    • v.32 no.1
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    • pp.42-47
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    • 2013
  • BACKGROUND: As improved LEDs (Light Emitting Diode) industry and decreased the price of LEDs in Korea, some farmers try to using the RED LEDs in green house and open field to increase the production of crop under bad weather condition. The aim of this study is to find out the effect of RED and FAR-RED LEDs lighting on the fruit quality of twelve-year old 'Hongro'/M.26 apple during night after sunset. METHODS AND RESULTS: FAR-RED (730nm, 2 and 4 hour) and RED (620nm, 2 and 4 hour) with 20 LED/PCB were treated in orchard for 16 weeks from June 10 to October 10 in 2009 and 2010 with control as an comparison. In our experiments, leaf weight was significantly higher in RED LEDs than control, tended to be decreased as times of FAR-RED lighting increased. Fruit weight was increased more in RED LEDs than control in 2009 and 2010, but decreased in FAR-RED lighting compared to control in 2010. Firmness and Hunter's a value of fruit were increased in FAR-RED lighting with 2 and 4 h than control. Soluble solid contents were higher in 2 h RED and 2, 4 h FAR-RED LEDs compared to control in 2009, there was no significant difference in 2010. Acid contents were no difference among the treatments. CONCLUSION(S): In our results, we found that RED LEDs was more helpful to increase the fruit weight and FAR-RED LEDs promote to be higher hunter a value of fruit skin. So, we thought that it is necessary to more study if mixed of RED and FAR-RED lighting is more helpful to promote fruit quality of 'Hongro' apple than single lighting of RED or FAR-RED LEDs respectively.

Effects of Optical Characteristics on the Growth of Benthic Microalga, Nitzschia sp. and Its Growth Kinetics of Phosphate for Bioremediation (생물적 환경정화를 위한 부착미세조류 Nitzschia sp.의 생장에 미치는 광학적 특성과 그에 따른 인산염 성장 동력학)

  • Oh, Seok-Jin;Kang, In-Seok;Yoon, Yang-Ho;Yang, Han-Soeb;Park, Jong-Sick
    • The Sea:JOURNAL OF THE KOREAN SOCIETY OF OCEANOGRAPHY
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    • v.14 no.4
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    • pp.205-212
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    • 2009
  • To suggest possible to bioremediation by benthic microalgae Nitzschia sp. isolated from the Jinhae Bay, the studies investigated the effects o flight quality and quantity on the growth of Nitzschia sp. and its growth kinetics for phosphate investigated. The Nitzschia sp. was cultured under blue (450 nm), yellow (590 nm) and red wavelength (650 nm) using light emitting diode (LED) and mixed wavelengths using a fluorescent lamp. The maximum specific growth rate showed the Nitzschia sp. under blue wavelength, although photoinhibition was observed above $100\;{\mu}mol\;m^{-2}\;s^{-1}$. Mixed wavelengths were also observed by decreasing the maximum cell density from high irradiances (>$100\;{\mu}mol$ photons $m^{-2}\;s^{-1}$). The compensation photon flux density ($I_0$) calculated from the mixed wavelengths equated to a depth of 4-10 m in Jinhae Bay, and was lower in the summer season than the depth due to suspended matter (ca. 4 m). Thus, the suitable depth for maximum growth of Nitzschia sp. might be extremely limited. In the growth kinetics for phosphate, half-saturation constant ($K_s$) was similar among different wavelengths, although the maximum growth rate was varied among different wavelengths. Because the $K_s$ was high than that of the phytoplankton, Nitzschia sp. might have adapted to the high nutrient concentrations, and have effective nutrient storage in the cell quota. Thus, Nitzschia sp. may be a useful species for bioremediation of the benthic layer in polluted inner bays by means of irradiated specific wavelength as blue.