• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.424-424
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• 2013

Ce3+, Sm3+, Eu3+, Tb3+ 등 희토류를 도핑한 여러 종류의 형광체는 백색 LED (white light-emitting diode), 전계방출표시소자(field emission display), 플라즈마디스플레이패널(plasma display panel), 약물 운송(drug delivery) 등 다양한 분야에서 응용되고 있다. 최근에는 졸-겔 방법(sol-gel method)을 이용하여Y2SiO5, Y3-XGdxAl5O12, SrAl2O4 등 여러 종류의 호스트 물질을 합성하여 형광체의 특성을 분석하는 연구가 활발히 진행되고 있다. 이러한 졸-겔 방법은 비교적 낮은 온도에서 간단한 공정으로 좋은 균질성과 높은 생산성을 갖도록 형광체를 제작할 수 있는 장점을 가지고 있다. 이에 본 연구에서는 졸-겔 방법을 이용하여 BaGd2TiO13구조를 제작하였고, 이러한 구조적, 광학적 특성을 분석하기 위하여 열분석기(thermal analyzer), 전계방출형주사전자현미경(field emission scanning electron microscopy), 투과전자현미경(field emission transmission electron microscopy)을 이용하였다. 이러한 졸-겔 방법을 이용하여 제작한 BaGd2TiO13 구조의 형광체 적용 연구를 통한 디스플레이 및 백색 LED 응용에 유용할 것으로 기대된다.

• Journal of the Semiconductor & Display Technology
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• v.22 no.1
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• pp.78-82
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• 2023

Metal oxide semiconductor (MOS) adapting spray-pyrolysis deposition technique has drawn large attention based on their high quality of intrinsic and electrical properties in addition to simple and low-cost processibility. To fully utilize the merits of MOS field-effect transistors (FETs) , transparency, it is important to understand the instability behaviors of FETs under illumination. Here, we studied the photo-induced properties of nc-ZnO/ZnO field-effect transistors (FETs) based on spray-pyrolysis under illumination which incorporating ZnO nanocrystalline nanoparticles into typical ZnO precursor. Our experiments reveal that nc-ZnO in active layer suppressed the light instabilities of FETs.

• Advanced Industrial SCIence
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• v.3 no.3
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• pp.14-19
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• 2024

Currently, micro LEDs (Light Emitting Diode) are attracting attention in the lighting field along with next-generation displays and have advantages such as high luminance, operating speed, energy efficiency, and long-term driving. It is predicted to bring new innovations in smartphones, televisions, and wearable electronic devices. These micro displays are self-luminous displays that emit light by themselves by being implemented as pixels composed of micrometer-sized LED devices. The main manufacturing processes can be divided into crystal growth, patterning and etching, chip separation and transfer, bonding and wiring, panel assembly and encapsulation, inspection, and quality management. Recently, this technology has developed at a rapid pace, and companies are expanding their investments in these fields. According to recent market research results, the micro LED display market is expected to continue to grow, and the main development direction of development can be summarized as manufacturing process improvement, material innovation, and driving technology development. It is believed that commercialization will accelerate through these studies and lead to innovation in the display industry with high performance and various application possibilities.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.342-345
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• 2009

Bright light-emitting single crystal organic field-effect transistors (FETs) based on highly luminescent oligo(p-phenylenevinylene) (OPV) derivatives are demonstrated. Although OPV single crystal FETs show both p - and n - type FET operation, we found that an increase in the conjugation length of the OPV derivatives from three phenylene rings to five phenylene rings results in an improvement in the electron mobility by an order of magnitude, while retaining the high hole mobility with intense electroluminescence.

• Proceedings of the KIPE Conference
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• 2001.07a
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• pp.305-307
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• 2001

In this paper, the basic characteristics of flat fluorescent lamp using ultraviolet generated from gas discharge and powder type electro luminescent display using a phenomenon of the light emission caused by the electrical field applied to phosphor are studied. The lamp is a simple structure with insulator layer, phosphor layer, and gas gap. Current(displacement current + discharge current) in flat fluorescent lamp using.

• Journal of Information Display
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• v.4 no.3
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• pp.6-11
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• 2003

We have fabricated a carbon nanotube field emission display (CNT-FED) panel with a 2-inch diagonal size by using a screen printing method and vacuum in-line sealing technology. The sealing temperature of the panel was around 390$^{\circ}C$ and the vacuum level was obtained with 1.4x$10^{-5}$torr at the sealing. When the field emission properties of a fabricated and sealed CNT-FED panel were characterized and compared with those of the unsealed panel which was located in a test chamber of vacuum level similar with the sealed panel. As a result, the sealed panel showed similar I-V characteristics with unsealed one and uniform light emission with very high brightness at a current density of 243 ${\mu}A/cm^2$, obtained at the electric field of 10 V/${\mu}m$.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.560-563
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• 2007

The light efficiency of fringe-field switching (FFS) mode was found to be dependent on the magnitude of dielectric anisotropy, indicating that the voltagedependent maximal effective cell retardation value in the on state is a function of magnitude of the dielectric anisotropy of the LC.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.8
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• pp.494-498
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• 2016

In this paper, we proposed the 3-dimenstional (3D) analysis for calculating the optical characteristics of an autostereoscopic display with electric field driven liquid crystal (ELC) lens. From 3D analysis considering the slanting of lens, we calculate the cross-talk of each images and the distortion of viewing zone. Using geometric opics and extended Jones matrix method (EJMM), phase retardation of ELC lens according to position is calcuated and then optical path difference in 3D space considering tilt and azimuth angle of incident light is gotten. Then, intensity distribution is presented in the space. Through camparing the intensity distribution using ideal lens with the ELC lens, we identify the noise and image distortion of ELC lens. As a result, this analysis is expected to provide optimum design conditions for realistic and rigorous 3D display with ELC lens.

• Korean Journal of Optics and Photonics
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• v.12 no.2
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• pp.103-108
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• 2001

In this paper, we designed and made the scanned point detecting system for 3-dimensional measurement of the light emitted from plasma display panel (PDP) , and we measured and analyzed 3-dimensional light emitted from a real PDP by using this scanned point detecting system. The scanned point detecting system has a point detector with a pinhole. The light emitted from the source at the in-focus position can pass through the pinhole and be collected by detector. The light from other sources at outof-focus positions is focused at points in front of or behind the pinhole, and thus it is intercepted by the pinhole. Therefore, we can detect light information from a particular point of a PDP cell of 3-dimensional structure. We know the electric field distribution inside the PDP cell from the 3-dimensionallight intensity distribution measured by using the scanned point detecting system. As the Z axial measurement increases, the intensity of light detected increases and intensity of light detected on the inside edge of the ITa electrode is larger than outside edge of the ITa eletrode and gap of the ITa electrodes. Also, as the measurement point moves from one barrier rib to another, the detected light is weaker near to the barrier ribs than at the center between the barrier ribs. The emitted light is concentrated at the center between barrier ribs. ribs.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.234-234
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• 2003

Indium tin oxide(ITO) is an advanced ceramic material with many electronic and optical applications due to its high electrical conductivity and transparency to light ITO thin films are used in transparent electrodes for display devices, transparent coatings for solar energy heat mirrors and windows films in n-p heterojunction solar cells, etc. Almost all display devices were fabricated on transparent ITO electrode substrates. There are several factors that cause decay in the efficiency and the failure of display devices. The degradation or damage of ITO is one of the main factors. Under normal operating conditions, the electric fold required for the operation of display devices is very high As a high electric field induces the joule heat, the degradation of the ITO thin film may be expected. Therefore, it is worthy to investigate the thermal and electrical effect on ITO thin films.