• Transactions on Electrical and Electronic Materials
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• v.15 no.2
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• pp.69-72
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• 2014

White LEDs, based on blue LED chips coated with a yellow emitting phosphor (YAG:Ce), have several disadvantages. In this paper, we report the improvement in CRI [Color Rendition Index] using $GdAl_5O_{12}:Ce$ (GdAG:Ce) and related phosphors for blue LEDs. A modified combustion synthesis route using mixed fuel was used for synthesis route. By using this procedure, we formed the desired compounds in a single step. LEDs were then fabricated by coating the blue LED chips (CREE 470 nm, 300 micron) with the GdAG:Ce phosphor dispersed in epoxy resin. The CRI typically between 65~70 for the YAG:Ce based LED was improved to 87 for LEDs fabricated from the Gd(Al,Ga)G phosphors.

• Clean Technology
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• v.20 no.2
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• pp.97-102
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• 2014

Currently various studies are underway for dispensing high-viscosity phosphor. These studies have reported limitations and challenges in the dispensing process. The discharged amount of phosphor was approximately the same each time which is important for the implementation of high-efficiency white LED technology. This paper present high-viscosity phosphor dispensing process for white LED implementation by using electrostatic printing technology. The voltage controlled DOD (Drop-On-Demand) discharge experiment was studied to determine angle of drop meniscus at nozzle and dot diameter. With increase in Discharge voltage, the discharge angle of meniscus increased while dot diameter decreased. Therefore it can be concluded that we can control the discharge rate by controling the discharge angle of meniscus.

• Korean Journal of Materials Research
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• v.27 no.6
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• pp.312-317
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• 2017

In the construction of a white LED, the region of the red emission is a very important factor. Red light emitting materials play an important role in improving the color rendering index of commercial lighting. These materials also increase the color gamut of display products. Therefore, the development of novel phosphors with red emission and the study of color tuning are actively underway to improve product quality. In the present study, heuristic algorithms were used to search for phosphors capable of increasing the color rendering index and color gamut. Using a heuristic algorithm, the phosphors that were identified were $SrGe_4O_9:Mn^{4+}$ and $BaGe_4O_9:Mn^{4+}$. Emission spectra study confirmed that these phosphors emit light in the deep red wavelength region, which can fulfill the requirement for the improvement in color rendering index and color gamut for a white LED.

• Journal of the Korean institute of surface engineering
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• v.47 no.4
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• pp.192-197
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• 2014

Red-emitting nitride phosphors recently attracted considerable attention because of their high thermal stability and high color rendering index properties. For excellent phosphor of white light-emitting-diode, ternary nitride phosphor of $Sr/SmSi_5N_8:Eu^{2+}$ with different $Eu^{2+}$ ion concentration were synthesized by solid state reaction method. In this work, red-emitting nitride $Sr/SmSi_5N_8:Eu^{2+}$ phosphor was successfully synthesized by using multi-step high frequency induction heat treatment. The effects of molar ratio of component and experimental conditions on luminescence property of prepared phosphors have been investigated. The structure and luminescence properties of prepared $Sr/SmSi_5N_8:Eu^{2+}$ phosphors were investigated by XRD and photoluminescence spectroscopy. The excitation spectra of $Sr/SmSi_5N_8:Eu^{2+}$ phosphors indicated broad excitation wavelength range of 300 - 550 nm, namely from UV to visible area with distinct enhanced emission peaks. With an increase of $Eu^{2+}$ ion concentration, the peak position of emission in spectra was red-shifted from 613 to 671 nm. After via multi-step heat treatment, prepared phosphor showed excellent luminescence properties, such as high emission intensity and low thermal quenching, better than commercial phosphor of $Y_3Al_5O_{12}:Ce^{3+}$. Using $Eu_2O_3$ as a raw material for $Eu^{2+}$ dopant with nitrogen gas flowing instead of using commercial EuN chemical for $Sr/SmSi_5N_8:Eu^{2+}$ synthesis is one of characteristic of this work.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.7
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• pp.567-574
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• 2013

An optical model is proposed in the white LED using phosphor and LED chip. In this paper a new model that describes the absorption rate and quantum efficiency with increasing the mixing ratio of phosphor in silicone, and the allotment of the phosphor absorption optical power in the several phosphor mixing in the silicone. Single phosphor in silicone from the optical measurement data before and after molding, the solution to get the blue optical power and the phosphor emission optical power is proposed. By these solution the absorption rate and the quantum efficiency was obtained. The model with single phosphor mixing in the silicone the validity was confirmed.

• Journal of Information Display
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• v.13 no.1
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• pp.37-42
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• 2012

An empirical functional form was suggested for the analysis of the emission spectrum of high-power light-emitting diode (LED) consisting of a sharp blue peak from the LED chips and a broad yellow peak from the phosphor layer. The peak positions, half widths, shape parameters, and amplitudes of these two peaks were reliably obtained as a function of the temperature, and the results were discussed qualitatively in relation with the junction temperature. The adoption of an inert liquid was found to have significantly reduced the LED temperature and the color shift of the emitted light. The phenomenological approach used in this study may be helpful in the simulation of the LED spectrum under various thermal conditions, and may thus be helpful in the improvement of the device performance.

• Journal of the Korean Ceramic Society
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• v.43 no.3 s.286
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• pp.169-172
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• 2006

We have synthesized a $Eu^{2+}-activated\;{(Sr,Ba)}_2SiO_4$ yellow phosphor and investigated the development of blue LEDs by combining the phosphor with a InGaN blue LED chip (${\lambda}_{em}$=405 nm). The InGaN-based ${(Sr,Ba)}_2SiO_{4}:Eu$ LED lamp shows two bands at 405 nm and 550 nm. The 405 nm emission band is due to a radiative recombination from a InGaN active layer. This 405 nm emission was used as an optical transition of the ${(Sr,Ba)}_2SiO_{4}:Eu$ phosphor. The 550 nm emission band is ascribed to a radiative recombination of $Eu^{2+}$ impurity ions in the ${(Sr,Ba)}_2SiO_4$ host matrix. In the preparation of UV Yellow LED Lamp with ${(Sr,Ba)}_2SiO_{4}:Eu$ yellow phosphor, the highest luminescence efficiency was obtained at the epoxy-to-yellow phosphor ratio of 1:0.45. At this ratio, the CIE chromaticity was x=0.4097 and y=0.5488.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.520-524
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• 1999

Light-emitting diode(LEDs), diode arrays, and phosphor display panels are finding increased use in a variety of commercial applications. Present and anticipated application of these devices include solid state indicator and display systems. In this work, Phosphor based on ZnS:Cu are used. Relation by luminance with the thickness of insulating layer and phosphor layer are discussed. Increased thickness of insulating layer are stable on voltage to 300V. By considering thickness and voltage, optimal structure and thickness are investigated. In order to maximize even surface emission, various sieving processes are introduced. 150cd/m$^2$ luminance by various wave intensity are investigated in stable voltage and frequency.

• Korean Journal of Materials Research
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• v.16 no.12
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• pp.761-765
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• 2006

[ $II-III_2-(S,Se)_4$ ] structured of phosphor has been used at various field because those have high luminescent efficiency and broad emission band. Among these phosphors, the europium doped $BaGa_2S_4$ was prepared by solid-state method and had high potential application due to an emissive property of UV region. Also, the common sulfide phosphors were synthesized by using injurious $H_2S\;or\;CS_2$ gas. However, in this study $BaGa_2S_4:Eu^{2+}$ phosphor in addition to excess sulfur was prepared under at 5% $H_2/95%\;N_2$ reduction atmosphere. Thus, this process could be considered as large scale synthesis because of non-harmfulness and simplification. The photoluminescence efficiency of the prepared $BaGa_2S_4:Eu^{2+}$ phosphor increased 20% than that of commercial $SrGa_2S_4:Eu^{2+}$ phosphor. The prepared $BaGa_2S_4:Eu^{2+}$ could be applied to green phosphor for white LED of three wavelengths.

• Korean Journal of Materials Research
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• v.21 no.6
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• pp.295-298
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• 2011

ZnS:Mn, Dy yellow phosphors for White Light Emitting Diode were synthesized by a solid state reaction method using ZnS, $MnSO_4{\cdot}5H_2O$, S and $DyCl_3{\cdot}6H_2O$ powders as starting materials. The mixed powder was sintered at $1000^{\circ}C$ for 4 h in an air atmosphere. The photoluminescence of the ZnS:Mn, Dy phosphors showed spectra extending from 480 to 700 nm, peaking at 580 nm. The photoluminescence of 580 nm in the ZnS:Mn, Dy phosphors was associated with $^4T_1{\rightarrow}^6A_1$ transition of $Mn^{2+}$ ions. The highest photoluminescence intensity of the ZnS:Mn, Dy phosphors under 450 nm excitation was observed at 4 mol% Dy doping. The enhanced photoluminescence intensity of the ZnS:Mn, Dy phosphors was explained by energy transfer from $Dy^{3+}$ to $Mn^{2+}$. The CIE coordinate of the 4 mol% Dy doped ZnS:Mn, Dy was X = 0.5221, Y = 0.4763. The optimum mixing conditions for White Light Emitting Diode was obtained at the ratio of epoxy : yellow phosphor = 1:2 form CIE coordinate.