• 조명전기설비학회논문지
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• 제26권7호
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• pp.1-8
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• 2012

In this paper, we improved the light extraction efficiency by structural change of LEDs on conventional LEDs. We simulated the LEDs light emission as functions of LED side wall angle, various refractive indices the geometrical structures and analyzed the condition improved the light efficiency. We present the results of experimerns and simulations for light output power from LEDs for various refractive indices and the geometrical structures of the LED encapsulants. When the side wall angle range was from 40[$^{\circ}$] to 30[$^{\circ}$], the LED emission increased. LED side wall angle onto LED using the simulation system with a fine tuning of the structure of the LEDs side wall angle is fabricated. Additionally, we changed the side wall angle of LED package with spherical structure and flat structure. The result of spherical structure ray tracting is higher compared with flat structure about 14[%].

• Journal of Power Electronics
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• 제18권4호
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• pp.975-984
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• 2018

This work presents a high efficiency phase shifted full bridge (PSFB) DC-DC converter for use in the second stage of a battery charger for neighborhood electrical vehicle (EV) applications. In the design of the converter, Lithium-ion battery cells are preferred due to their high voltage and current rates, which provide a high power density. This requires wide range output voltage regulation for PSFB converter operation. In addition, the battery charger works with a light load when the battery charge voltage reaches its maximum value. The soft switching of the PSFB converter depends on the dead time optimization and load condition. As a result, the converter has to work with soft switching at a wide range output voltage and under light conditions to reach high efficiency. The operation principles of the PSFB converter for the continuous current mode (CCM) and the discontinuous current mode (DCM) are defined. The performance of the PSFB converter is analyzed in detail based on wide range output voltage and load conditions in terms of high efficiency. In order to validate performance analysis, a prototype is built with 42-54 V / 15 A output values at a 200 kHz switching frequency. The measured maximum efficiency values are obtained as 94.4% and 76.6% at full and at 2% load conditions, respectively.

• Bulletin of the Korean Chemical Society
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• 제35권3호
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• pp.705-708
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• 2014

We demonstrate the blue InGaN/GaN multiple quantum wells light-emitting diodes (LEDs) with an embedded air-gap photonic crystal (PC) which was fabricated by the lateral epitaxial overgrowth of GaN layer on the tungsten (W) nano-masks. The periodic air-gap PC was formed by the chemical reaction of hydrogen with GaN on the W nano-mask. The optical output power of LEDs with an air-gap PC was increased by 26% compared to LEDs without an air-gap PC. The enhanced optical output power was attributed to the improvement in internal quantum efficiency and light extraction efficiency by the air-gap PC embedded in GaN layer.

• 한국태양에너지학회 논문집
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• 제29권6호
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• pp.110-118
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• 2009

This research is an experimental study on BIPV Power performance of See-through a-si and Light-through applying external curtain wall. In case of See-through a-si Photovoltaic, appropriateness of facade applying standard($950\;{\times}\;980mm$) large($950\;{\times}\;1960mm$)area photovoltaic was examined. Transparent performance was also investigated through Power simulation according to angles and seasons of See-through a-si and Light-through Photovoltaic so that Power output was surveyed with using designed and manufactured Mock-up. When comparing See-through a-si to Light-through Photovoltaic for simulation Power output on angles based on full south aspect, which the result was that See-through a-si Power output according to Light-through Power output was the highest of 65.5% when applying a 90 degree angle. Monthly accumulated average Power output during winter seasons (December, January and February) applying a vertical plane on full south aspect was analyzed, which results in 66.37W/h of See-through a-si and 139.1 W/h of Light-through. See-through a-si Power output showed 47.7% in comparison with Light-through transparent. Also monthly, hourly average Power efficiency according to solar radiation during winter seasons (December, January and February) was that 4.7% of See-Through a-si and 9.8% of Light-through.

• Journal of the Optical Society of Korea
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• 제2권1호
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• pp.13-21
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• 1998

Based on the escape cone concepts, high-brightness light-emitting diodes (LEDs) have been analyzed. In AlGaAs or InGaAlP LEDs, photon absorption in the ohmic region under the electrode is known to be significant. Thus, ins general, a thick window layer (WL) and a transparent substrate (TS) would minimize photon shielding by the electrodes and considerably improve photon output coupling efficiency. However, the schemes do not seem to be necessary in InGaN system. Photon absorption in ohmic contact to a wide bandgap semiconductor such as GaN may be negligible and, as a result, the significant photon shielding by the electrodes will not degrade the photon output coupling efficiency so much. The photon output coupling efficiency estimated in InGaN LEDs is about 2.5 - 2.8 times that of the conventional high-brightness LED structures based on both WL and TS schemes. As a result, the extenal quantum efficiency in InGaN LEDs is as high as 9% despite the presumably very low internal quantum efficiency.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 추계학술대회 논문집 전기물성,응용부문
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• pp.255-258
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• 2001

This paper proposes a new structure of a fiber-optic illuminator using high Lux RGB LEDs. A simulation program, LightTools, is used for the verification of the model. An LED mounting holder containing 74 RGB LEDs is used as a basic part of its light collector. Since the light output level of current LED lamps is still far below that of conventional lamps, it is required to double the right output in order to replace a conventional illuminator with a halogen lamp. An additional cone-type reflector is installed hemispherically and the resulting structure comprises a basic collector unit. To further increase the output two collector units are connected together in series. As the result, the light output increases nearly 70% with compared to a collector with a basic structure. The system efficiency can be increased more than 8 times with compared to conventional one.

• Journal of Information Display
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• 제2권4호
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• pp.46-51
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• 2001

Using ray-optics code incorporated with three-dimensional PDP cell simulation, we have analysed the energy flow in the PDP cell from the electric power input to the visible light output. Also, the visible light output profile and viewing angle distribution were obtained. We applied our code to the analysis of the barrier rib height effect on the visible light luminance and efficiency of the sustaining discharge. Although cells with higher barrier rib generate more VUV photons, less ratio of visible photons are emitted toward front panel due to the shadow effect. Thus, there exists optimal barrier rib height giving the highest visible luminance and efficiency. This kind of code can be a powerful tool in designing cell geometry.

• 한국광학회지
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• 제15권2호
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• pp.171-176
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• 2004

광 편향기가 집적된 레이저 다이오드를 제작하고 편향기 주입전류에 따른 레이저 다이오드의 특성 변화 및 출력광의 편향을 조사하였다. 레이저 다이오드와 집적된 수동 도파로의 상부 클래드 층의 일부분에 광 편향기를 집적하고, 편향기의 전류 주입에 따른 굴절률 변화를 유도하여 출력광의 편향이 발생하도록 하였다. 편향기의 전류 주입에 따른 출력광의 특성변화를 조사하기 위하여 편향기 주입 전류에 따른 레이저 다이오드의 문턱 전류(threshold current), 발진 효율(slope efficiency) 및 출력광 스펙트럼을 측정하였다. 측정 결과, 편향기 전류의 증가에 따라 출력광의 문턱 전류는 증가하고, 발진 효율은 감소하는 경향을 나타내었으나 출력광의 스펙트럼에는 영향을 주지 않는 특성을 나타내었다. 또한, 이론적 계산을 통해 광 편향기를 지나는 광이 편향됨을 확인하고, 편향기 집적 레이저 다이오드에서 출력되는 광의 far-field pattern을 측정하여 편향기 주입 전류에 따른 출력광의 편향을 실험적으로 확인하였다. 제작된 광 편향기 집적 레이저 다이오드에서 15 ㎃의 광 편향기 주입 전류 변화에 대해서 1.9$^{\circ}$의 편향각 변화를 측정 할 수 있었다.

• 한국광학회지
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• 제19권5호
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• pp.381-385
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• 2008

InGaN/Sapphire LED에서 기판 제거와 패키지 방식이 광출력 특성에 미치는 영향을 분석하였다. Sapphire 기판의 제거는 반도체 접합에서 발생된 열의 방출에 도움이 되지만, 반대로 광추출효율이 손상되는 문제점이 수반된다. Sapphire 기판이 제거된 칩을 열전도율이 좋은 금속의 마운트 위에 부착하면, 최대 구동전류는 현저히 증가하고 광출력도 상당히 증가됨으로써, 광추출효율이 손상되는 문제점이 어느 정도 보상된다. 하지만, sapphire 기판이 제거된 칩을 상대적으로 열전도율이 낮은 유전체의 마운트 위에 부착하는 경우에는, 거의 모든 입력전류 범위에서 sapphire 기판이 남아 있는 일반형 칩보다 낮은 광출력을 나타낸다. 따라서, 작은 광출력이 요구되는 응용분야에서는 사용된 칩 마운트의 종류에 무관하게, 일반형 칩이 sapphire 기판이 제거된 칩 보다 유리한 것으로 분석된다.

• 한국전기전자재료학회논문지
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• 제30권3호
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• pp.175-179
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• 2017

In this study, we investigate the $SiO_2$ current blocking layer (CBL) to improve light output power efficiency in nonpolar a-plane (11-20) GaN LEDs on a r-plane sapphire substrate. The $SiO_2$ CBL was produced under the p-pad layer using plasma enhanced chemical vapor deposition (PECVD). The results show that nonpolar GaN LED light output power with the $SiO_2$ CBL is considerably enhanced compared without the $SiO_2$ CBL. This can be attributed to reduced light absorption at the p-pad due to current blocking to the active layer by the $SiO_2$ CBL.