• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.26 no.7
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• pp.1-8
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• 2012

In this paper, we improved the light extraction efficiency by structural change of LEDs on conventional LEDs. We simulated the LEDs light emission as functions of LED side wall angle, various refractive indices the geometrical structures and analyzed the condition improved the light efficiency. We present the results of experimerns and simulations for light output power from LEDs for various refractive indices and the geometrical structures of the LED encapsulants. When the side wall angle range was from 40[$^{\circ}$] to 30[$^{\circ}$], the LED emission increased. LED side wall angle onto LED using the simulation system with a fine tuning of the structure of the LEDs side wall angle is fabricated. Additionally, we changed the side wall angle of LED package with spherical structure and flat structure. The result of spherical structure ray tracting is higher compared with flat structure about 14[%].

• Journal of Power Electronics
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• v.18 no.4
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• pp.975-984
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• 2018

This work presents a high efficiency phase shifted full bridge (PSFB) DC-DC converter for use in the second stage of a battery charger for neighborhood electrical vehicle (EV) applications. In the design of the converter, Lithium-ion battery cells are preferred due to their high voltage and current rates, which provide a high power density. This requires wide range output voltage regulation for PSFB converter operation. In addition, the battery charger works with a light load when the battery charge voltage reaches its maximum value. The soft switching of the PSFB converter depends on the dead time optimization and load condition. As a result, the converter has to work with soft switching at a wide range output voltage and under light conditions to reach high efficiency. The operation principles of the PSFB converter for the continuous current mode (CCM) and the discontinuous current mode (DCM) are defined. The performance of the PSFB converter is analyzed in detail based on wide range output voltage and load conditions in terms of high efficiency. In order to validate performance analysis, a prototype is built with 42-54 V / 15 A output values at a 200 kHz switching frequency. The measured maximum efficiency values are obtained as 94.4% and 76.6% at full and at 2% load conditions, respectively.

• Bulletin of the Korean Chemical Society
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• v.35 no.3
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• pp.705-708
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• 2014

We demonstrate the blue InGaN/GaN multiple quantum wells light-emitting diodes (LEDs) with an embedded air-gap photonic crystal (PC) which was fabricated by the lateral epitaxial overgrowth of GaN layer on the tungsten (W) nano-masks. The periodic air-gap PC was formed by the chemical reaction of hydrogen with GaN on the W nano-mask. The optical output power of LEDs with an air-gap PC was increased by 26% compared to LEDs without an air-gap PC. The enhanced optical output power was attributed to the improvement in internal quantum efficiency and light extraction efficiency by the air-gap PC embedded in GaN layer.

• Journal of the Korean Solar Energy Society
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• v.29 no.6
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• pp.110-118
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• 2009

This research is an experimental study on BIPV Power performance of See-through a-si and Light-through applying external curtain wall. In case of See-through a-si Photovoltaic, appropriateness of facade applying standard($950\;{\times}\;980mm$) large($950\;{\times}\;1960mm$)area photovoltaic was examined. Transparent performance was also investigated through Power simulation according to angles and seasons of See-through a-si and Light-through Photovoltaic so that Power output was surveyed with using designed and manufactured Mock-up. When comparing See-through a-si to Light-through Photovoltaic for simulation Power output on angles based on full south aspect, which the result was that See-through a-si Power output according to Light-through Power output was the highest of 65.5% when applying a 90 degree angle. Monthly accumulated average Power output during winter seasons (December, January and February) applying a vertical plane on full south aspect was analyzed, which results in 66.37W/h of See-through a-si and 139.1 W/h of Light-through. See-through a-si Power output showed 47.7% in comparison with Light-through transparent. Also monthly, hourly average Power efficiency according to solar radiation during winter seasons (December, January and February) was that 4.7% of See-Through a-si and 9.8% of Light-through.

• Journal of the Optical Society of Korea
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• v.2 no.1
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• pp.13-21
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• 1998

Based on the escape cone concepts, high-brightness light-emitting diodes (LEDs) have been analyzed. In AlGaAs or InGaAlP LEDs, photon absorption in the ohmic region under the electrode is known to be significant. Thus, ins general, a thick window layer (WL) and a transparent substrate (TS) would minimize photon shielding by the electrodes and considerably improve photon output coupling efficiency. However, the schemes do not seem to be necessary in InGaN system. Photon absorption in ohmic contact to a wide bandgap semiconductor such as GaN may be negligible and, as a result, the significant photon shielding by the electrodes will not degrade the photon output coupling efficiency so much. The photon output coupling efficiency estimated in InGaN LEDs is about 2.5 - 2.8 times that of the conventional high-brightness LED structures based on both WL and TS schemes. As a result, the extenal quantum efficiency in InGaN LEDs is as high as 9% despite the presumably very low internal quantum efficiency.

• Proceedings of the KIEE Conference
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• 2001.11a
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• pp.255-258
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• 2001

This paper proposes a new structure of a fiber-optic illuminator using high Lux RGB LEDs. A simulation program, LightTools, is used for the verification of the model. An LED mounting holder containing 74 RGB LEDs is used as a basic part of its light collector. Since the light output level of current LED lamps is still far below that of conventional lamps, it is required to double the right output in order to replace a conventional illuminator with a halogen lamp. An additional cone-type reflector is installed hemispherically and the resulting structure comprises a basic collector unit. To further increase the output two collector units are connected together in series. As the result, the light output increases nearly 70% with compared to a collector with a basic structure. The system efficiency can be increased more than 8 times with compared to conventional one.

• Journal of Information Display
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• v.2 no.4
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• pp.46-51
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• 2001

Using ray-optics code incorporated with three-dimensional PDP cell simulation, we have analysed the energy flow in the PDP cell from the electric power input to the visible light output. Also, the visible light output profile and viewing angle distribution were obtained. We applied our code to the analysis of the barrier rib height effect on the visible light luminance and efficiency of the sustaining discharge. Although cells with higher barrier rib generate more VUV photons, less ratio of visible photons are emitted toward front panel due to the shadow effect. Thus, there exists optimal barrier rib height giving the highest visible luminance and efficiency. This kind of code can be a powerful tool in designing cell geometry.

• Korean Journal of Optics and Photonics
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• v.15 no.2
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• pp.171-176
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• 2004

A light deflector integrated laser diode(LD) was fabricated and the characteristics of LD and ourput beam deflection as a function of deflector injection current were measured. To integrate the deflector with LD, a passive waveguide was integrated with the LD and a triangular-type light deflector was fabricated on the upper clad of the passive waveguide section. Light deflection from the fabricated light deflector is controlled by the effective refractive index variation induced by carrier injection. To characterize the effect of the deflector injection current, threshold current, slope efficiency, and output beam spectrum were measured as a function of deflector injection current. From these measured data, the increment in the threshold current and the decrement of the slope efficiency were observed. However, the output beam spectrum was not affected by the deflector. The Beam Propagation Method(BPM) was used to simulate the proposed device and the light deflection was measured by the far-field pattern of the output beam as a function of the deflector injection current. In the fabricated deflector integrated LD, the deflection angle of 1.9$^{\circ}$ at the injection current of 15 ㎃ was obtained.

• Korean Journal of Optics and Photonics
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• v.19 no.5
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• pp.381-385
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• 2008

We have analyzed the effect of the substrate removal and packaging schemes on light output characteristics in InGaN/Sapphire LEDs. The removal of the sapphire substrate helps to dissipate the heat generated in the junction, but the advantage comes only with the detrimental effect of degrading the photon extraction efficiency. If the substrate-removed chip is attached to a metallic mount with good thermal conductivity, the maximum driving current is increased drastically, producing significantly increased light output and therefore compensating the photon extraction efficiency degradation. On a dielectric mount with a relatively poor thermal conductivity, however, it produces smaller light output, over most input current range, than the regular type of chips with the sapphire substrate remaining. Thus, for low power applications, the regular chips may be preferred over the substrate-removed chips, regardless of the chip mounts employed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.3
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• pp.175-179
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• 2017

In this study, we investigate the $SiO_2$ current blocking layer (CBL) to improve light output power efficiency in nonpolar a-plane (11-20) GaN LEDs on a r-plane sapphire substrate. The $SiO_2$ CBL was produced under the p-pad layer using plasma enhanced chemical vapor deposition (PECVD). The results show that nonpolar GaN LED light output power with the $SiO_2$ CBL is considerably enhanced compared without the $SiO_2$ CBL. This can be attributed to reduced light absorption at the p-pad due to current blocking to the active layer by the $SiO_2$ CBL.