• Journal of the Semiconductor & Display Technology
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• v.20 no.3
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• pp.11-17
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• 2021

I performed a semi-analytical numerical analysis of the effects of core size and electric field intensity on the light emission wavelength of CdSe/ZnS quantum dots (QDs). The analysis used a quantum mechanical approach; I solved the Schrödinger equation describing the electron-hole pairs of QDs. The numerical solutions are described using a basis set composed of the eigenstates of the Schrödinger equation; they are thus equivalent to analytical solutions. This semi-analytical numerical method made it simple and reliable to evaluate the dependency of QD characteristics on the QD core size and electric field intensity. As the QD core diameter changed from 9.9 to 2.5 nm, the light emission wavelength of CdSe core-only QDs varied from 262.9 to 643.8 nm, and that of CdSe/ZnS core/shell QDs from 279.9 to 697.2 nm. On application of an electric field of 8 × 10⁵ V/cm, the emission wavelengths of green-emitting CdSe and CdSe/ZnS QDs increased by 7.7 and 3.8 nm, respectively. This semi-analytical numerical analysis will aid the choice of QD size and material, and promote the development of improved QD light-emitting devices.

• Journal of the Institute of Electronics Engineers of Korea TE
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• v.39 no.1
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• pp.9-15
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• 2002

In this thesis, blue emission organic light emitting devices were fabricated by using vacuum deposition method. Two types of device were employed to realize blue emission. Type I had an emitting layer containing TPB-doped $Alq_3$ and type II had an emitting layer containing DPA-doped $Alq_3$. The variable dopant concentration was 0.5 ~2 wt%. The electrical and optical characteristics of these devices have been investigated. The more dopant concentration increased, the nearer the blue coordinate. Type I than type II had a lower turn on voltage and driving voltage. The emission luminescence of type II was brighter than that of type I. When we applied 15V to type II with DPA(2wt%)-doped $Alq_3$, we have achived the emission luminescence of 1282cd/$m^2$, the emission wavelength of 476nm and the blue emission CIE coordination of (0.1273, 0.0672)

• Animal Bioscience
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• v.34 no.11
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• pp.1870-1878
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• 2021

Objective: The objective of this experiment was to investigate the effects of different colors produced by light emitting diode (LED) on Brown Tsaiya ducks. Methods: A total of 144 female Brown Tsaiya ducks were randomly allocated into three individual cage rearing chambers with different LED illumination colors as treatments. Three different treatments were: i) white color, ii) blue color, and iii) red color. The experiment periods were from ducks 21 to 49 weeks of age, determined traits included i) egg laying performance, ii) feed intake, iii) egg shell breaking strength, iv) egg shell thickness, v) egg Haugh unit, vi) egg weight, vii) serum Estradiol and Progesterone concentration, and viii) behavior pattern. Results: The results indicated that when compared with white and blue color, red color could stimulate ducks sexual maturation and raised the egg laying performance. The red light group was also observed to have the highest feed intake among three treatments. The blue treatment had the lowest egg shell breaking strength and the highest egg weight among three treatments, nevertheless, no significant difference was observed among three treatments on egg shell thickness and egg Haugh unit. The red light group had higher serum estradiol concentration than the white and blue groups, but no significant difference among treatments on the serum Progesterone concentration was found. The results of behavior pattern indicated that red light group showed more feeding and less resting behavior compared to the blue light group. Conclusion: We found a potential of applying red light illumination in the indoor laying duck raising system with positive results on egg laying performance and acceptable egg weight, equivalent egg qualities compared to white and blue light.

• Journal of Astronomy and Space Sciences
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• v.19 no.1
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• pp.47-56
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• 2002

Observations of times of minimum lights of the eclipsing binary V65l Cas were carried out on the three nights from November 21-23, 2000. From our observations a total of seven new times of minimum lights was obtained. Through the analysis of photoelectric and CCD times of minima of V65l Cas including ours, the light time orbit due to a third body, which was propose by Kim ＆ Lee (2000), was confirmed and improved. The resultant values for the period, semi-amplitude, and eccentricity of the light-time orbit were $6.^{y}3,\;0.^{d}0013$, and 0.78, respectively. The deduced marts range of the third body is . If the third body is $0.09M_{\odot}\;{\leq}\;M_3\;{\leq}\;0.20M_{\odot}\;for\;i_3\;{\geq}\;30^{\circ}$. If the third body suggested in V65l Cas system exists really and is a main-sequence star, it is located at the end of the main-sequence.

• Journal of Astronomy and Space Sciences
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• v.5 no.1
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• pp.53-56
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• 1988

UBV photometric monitoring of Eps Aurigae has been made at Yonsei University Observatory since the 1982-1984 eclipse. Among observatios made in four seasons(1984-5, 1985-6, 1986-7, 1987-8) after the 1982-84 eclips ended the observations of the latest season are presented. Standardized UBV light curves of Eps Aur exhibit a light variation in a semi-regular fashion with the amplitudes of 0.12, 0.19, and 0.29 for V, B, and U, respectively. Duratiohs of this light variation may show a color dependency with the mean value of about 78 days whose minimum light on near JD2447118.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.1082-1085
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• 2003

본 연구에서는 고분자를 사용하여 만든 유기EL소자인 PLED (Polymer Light Emitting Diode)의 제조공정 변화에 따른 소자성능을 연구하였다. PLED의 제작은 크게 ITO 기판 제작, 발광층 및 전극 증착 등의 공정으로 나누어진다. ITO 기판은 사진식각공정으로, 발광층의 증착은 스핀코팅법으로, 전극은 진공증착법으로 각각 제작하였다. 코팅 시 스핀속도 및 점도 조절을 통하여 발광층의 두께를 조절하였고, 스핀코팅 후 건조방법에 따라서 표면의 uniformity와 발광특성을 비교해 보았다. 실험결과 특정 두께에서 발광특성이 우수하게 나타나는 것을 확인할 수 있었다. 그리고 건조방법에 따라 발광층의 표면 uniformity에 차이가 있었으며, 표면 uniformity에 따라 diode의 I-V 특성 경향이 달리 나타났다.

• Publications of The Korean Astronomical Society
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• v.30 no.2
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• pp.241-245
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• 2015

In this work we present the results of light curve analysis for two cataclysmic variables detected recently in the SDSS project: SDSS J090350.73+330036.1 and J150240.98+333423.9. Photometric observations of the first were obtained during a superoutburst in May 2010. Our observations clearly indicate the presence of superhumps in the light curves, suggesting SDSS J090350.73+330036.1 is an SU UMa dwarf nova. We determined the period of the superhumps. We also carried out fitting using a spiral-arm model in order to determine parameters of the accretion disk, hot line, and other components of this system. Photometric observations of the second, J150240.98+333423.9, were obtained during the post-maximum decline, during April-June 2012. Photometric variability of this system has been studied in an inactive state. We obtained its parameters via a combined model fitted to the observed light curves by ${\chi}^2$ minimization.

• JSTS:Journal of Semiconductor Technology and Science
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• v.5 no.2
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• pp.131-135
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• 2005

The effect of different surface passivation films on blue or green (465-505 nm) InGaN/GaN multi-quantum well light-emitting diodes (LEDs) die were examined. $SiO_2$ or $SiN_x$ deposited by plasma enhanced chemical vapor deposition, or $Sc_2O_3$ or MgO deposited by rf plasma enhanced molecular beam epitaxy all show excellent passivation qualities. The forward current-voltage (I-V) characteristics were all independent of the passivation film used, even though the MBE-deposited films have lower interface state densities ($3-5{\times}10^{12}\;eV^{-1}\;cm^{-2}$) compared to the PECVD films (${\sim}10^{12}\;eV^{-1}\;cm^{-2}$), The reverse I-V characteristics showed more variation, hut there was no systematic difference for any of the passivation films, The results suggest that simple PECVD processes are effective for providing robust surface protection for InGaN/GaN LEDs.

• Journal of the Korean Chemical Society
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• v.11 no.1
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• pp.12-16
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• 1967

Fading of Chlorantine Fast Red 5B (C.I. Direct Red 81) on cotton fabric exposed to carbon are light was examined. It was observed that the dye had anomaly in CF curve slope, while normal in CFG one. Auther considered that the reason for discrepancy of the one with the other curve slope might be appeared from Weber-Fechner law, and derived following equation $F_v=[logC_0-log(C_0-C_0F_t/100)]{\times}100/(logC_0+b)$ where $F_t$; the proportion of dye faded after t hour exposure. $F_v$; the proportion of dye faded after t hour exposure, when a pattern is judged by visual method $C_0$; initial dye concentration. b; constant. also, the reason for increasing lightfastness with dye concentration was discussed on view of the above equation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.3
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• pp.246-251
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• 2013

Screen printing is commonly used to form the front/back electrodes in silicon solar cell. But it has caused high resistance and low aspect ratio, resulting in decreased conversion efficiency in solar cell. Recently the plating method has been combined with screen-printed c-Si solar cell to reduce the resistance and improve the aspect ratio. In this paper, we investigated the effect of light induced silver plating with screen-printed c-Si solar cells and compared their electrical properties. All wafers were textured, doped, and coated with anti-reflection layer. The metallization process was carried out with screen-printing, followed by co-fired. Then we performed light induced Ag plating by changing the plating time in the range of 20 sec~5min with/without external light. For comparison, we measured the light I-V characteristics and electrode width by optical microscope. During plating, silver ions fill the porous structure established in rapid silver particle sintering during co-firing step, which results in resistance decrease and efficiency improvement. The plating rate was increased in presence of light lamp, resulting in widening the electrode with and reducing the short-circuit current by shadowing loss. With the optimized plating condition, the conversion efficiency of solar cells was increased by 0.4% due to decreased series resistance. Finally we obtained the short-circuit current of 8.66 A, open-circuit voltage of 0.632 V, fill factor of 78.2%, and efficiency of 17.8% on a silicon solar cell.