• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.07b
• /
• pp.1062-1065
• /
• 2004

The importance of display is becoming increasingly important due to the development of information and industry where it leads to diverse and abundant information in today's society. The demand and application range for FPD(Flat Panel Display), specifically represented by LCD(Liquid Crystal Display) and PDP(Plasma Display Panel), have been rapidly growing for its outstanding performance and convenience amongst many other forms of display. The current focus has been on OLED(Organic Light Emitting Diode) in the mobile form, which has just entered into mass production amid the different types of FPD. Many studies are being conducted in regards to device, vacuum evaporation, encapsulation, and drive circuits with the development of device as a matter of the utmost concern. This study develops a new type of light-emitting materials by synthesizing medical polymer organic chitosan and phosphor material CuS. Chitosan itself satisfies the Pool-Frenkel Effect, an I-V specific curve, with a thin film under $20{mu}m$, and demonstrates production possibility for a living body sensors solely with the thin film. Furthermore, it enables production possibility for EML of organic EL device(Emitting Layer) with liquid Green light emitting and Blue light emitting as a result of synthesis with phosphor material.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.17 no.11
• /
• pp.1212-1217
• /
• 2004

Red organic electroluminescent (EL) devices based on tris(8-hydroxyquinorine aluminum) (Alq$_3$) doped with red emissive materials, 4-(dicyanomethylene)-2-t-butyl -6-(l,1,7,7-tetramethyljulolidyl-9-enyl)4H-pyran (DCJTB). poly(3-hexylthiophene) (P3HT). rubrene and 4-dicyanomethylene-2-methyl-6[2-(2,3.6.7-tetrahydro-lH,5H-benzo-[i,j]quinolizin-8yl)vinyl]-4H-pyran (DCM2) were fabricated for applying to the red light source, The photoluminescence (pL) intensities of red emissive materials doped in Alq$_3$ are limited by the concentration quenching with increasing the doping ratio and the doping concentration of DCJTB, DCM2, P3HT and rubrene measured at the maximum intensity showed 5, 1, 0.5 and 2 wt%, respectively. Time-resolved PL dynamic results showed that the PL lifetime of red emissive materials doped in Alq$_3$ were increased more than the value of material itself. It means that the efficient energy transfer occurred in the mixed state and Alq$_3$ is a suitable host materials for red emissive materials, The device which was used DCJTB as a dopant achieved the best result of the maximum luminance of 594 cd/$m^2$ at 15 V and showed the chromaticity coordinates of x=0,624, y=0,371.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.08a
• /
• pp.356-356
• /
• 2012

InGaN/GaN LEDs는 1993년에 처음 소개 된 이래로, 성장, 제품 면에서 끊임없는 발전을 이루어 왔다. 따라서 GaN 기반의 LED는 조명, 디스플레이 그리고 후광 발광판 등 다양한 분야에서 사용되고 있다. 현재 GaN 기반의 LED는 낮은 작동전류에서 높은 내부, 외부 효율을 보인다고 알려져 있다. 그러나 LED는 보통 높은 작동 전류에서 사용하고 있는데 이 전류 값에서 'Efficiency Droop'이라 하는 효율 저하가 나타난다. 이 현상의 원인으로는 결함, Auger 영향, 캐리어 누설, 격자 불일치로 인한 내부 장 효과, 그리고 온도의 영향 등이 이 효율저하를 일으키는 주된 원인으로 생각되고 있다. 하지만 최근 효율저하의 원인에 대하여 결함, 그리고 온도 변화의 실험 등을 통하여 실험적으로 Auger 영향은 효율 저하의 원인으로 가능성이 매우 낮고 누설 전류가 효율저하의 주된 원인의 가능성이 높다고 많은 그룹에서 문제제기를 하고 있는 추세이다. 이 연구에서, 효율저하의 특성을 분석하기 위하여 GaN 기반의 EBL이 있는 LED와 없는 LED를 이용하였다. I-V 곡선, 주입 전류에 따른 반치폭의 변화와 스펙트럼의 변화, 그리고 외부 효율 등의 비교 분석을 통하여 효율 저하의 원인이 누설 전류에 의함이라고 분석을 할 수 있었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1998.11a
• /
• pp.315-318
• /
• 1998

Organic light-emitting diodes(OLEDs) or electroluminescent devices have attracted much attention because of their possible application as large-area light-emitting displays. Their structure was based on employing a multilayer device structure containing an emitting layer and a carrier transporting layer of suitable organic materials. In this study, several Tb complexes such as Tb(ACAC)$_3$(Phen), Tb(ACAC)$_3$(Phen-Cl) and Tb(TPB)$_3$(Phen) were synthesized and the photoluminescence(PL) and electroluminescence (EL) characteristics of their thin films were investigated by fabricating the devices having a structure of anode/HTL/terbium-oomplex/ETL/cathode, where TPD was used as an hole transporting and Alq$_3$ and TAZ-Si were used as an electron transporting materials. It was found that the photoluminescence(PL) and electroluminescence(EL) characteristics of these terbium complexes were dependent upon the ligands coordinated to terbium metal. Details on the explanation of electrical transport phenomena of the structure with I-V characteristics of the OLEDs using the trapped-charge-limited current(TCLC) model will be discussed.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.57 no.5
• /
• pp.803-807
• /
• 2008

A making process of DSC(dye sensitized solar cell) was presented. In general, Photo electrodes of DSC was made by using colloid paste of nano $TiO_2$ and processing of Doctor-blade printing and high temperature sintering for porous structure. These methods lead to cracks on $TiO_2$ surface and ununiform of $TiO_2$ thickness. This phenomenon is one factor that makes low efficiency to cells. After $TiO_2$ printing on TCO glass, a physical vibration was adapted for reducing ununiform of $TiO_2$ thickness. And a thermal treatment at low temperature(under $75^{\circ}C$) was adapted for reducing cracks on $TiO_2$ surface. In this paper, we have designed and manufactured an ultrasonic circuit (100W, frequency and duty variable) and a thermal equipment. Then, we have optimized forcing time, frequency and duty of ultrasonic irradiation and thermal heating for surface treatment of photo-electrode of DSC. In I-V characteristic test of DSC, ultrasonic and thermal treated DSC shows 19% improved its efficiency against monolithic DSC. And it shows stability of light-harvesting from drastically change of light irradiation test.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.18 no.6
• /
• pp.576-581
• /
• 2005

We fabricated red organic light emitting diodes(OLEDs) utilizing tis(8-hydroxyquinoline) aluminum $(Alq_3)$ doped with $5\%$ of (4-(dicyanomethylene)-2-i-propyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran) (DCJTI) and investigated the driving and modulation characteristics for applying to the electro-optical conversion device. To improve the driving characteristics of red OLEDs, 3 V of offset voltage, which is equal to the turn on voltage, Is applied to the device. Offset voltage enhanced the optical EL output and reduced the rise time of EL waveforms of red OLEDs, and hence the cutoff frequency is increased with increasing applied voltage. The optical pulse of 100 MHz has been obtained from red OLEDs. Therefore, we confirmed that the red OLEDs can be applied to the fields of optical communication as an electro-optical conversion device.

• Journal of the Korean Solar Energy Society
• /
• v.29 no.2
• /
• pp.70-75
• /
• 2009

In this experiment, we did sampling 6 kinds of photovoltaic modules and analyzed the discrepancy of measurement results between l laboratory and 4 PV makers to have performance repeatability at Standard Test Condition(STC) condition. From the KIER's results, Korea's standard test laboratory, other laboratory showed -10% measurement variation. The causes came from correction of reference cell, test condition and the state of skill. Form the comparison test, we analyzed the problems. But three PV maker reduced measurement variation, other one PV maker and one test laboratory didn't improve the problems of correction of reference cell, test condition and the state of skill. Also, High Efficiency Module had a big discrepancy of -10.0$\sim$-6.2% among 3 laboratories which have a less than 10msec light pulse duration time. This made low spectrum response speed so the Fill Factor decreased maximum output power under 10msec light pulse duration time

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.06a
• /
• pp.84-84
• /
• 2008

A multidimensional ZnO light-emitting diode LEDstructure comprising film/nanorods/substrate was fabricated on a p-type Si substrate using metal organic chemical vapor deposition at relatively low growth temperature. The filmlike top layer used for the metal contact was continuously formed on the ZnO nanorods by varying the growth conditions and the resulting structure allowed us to utilize the nanorods with intense emission as an active layer. We investigated the performance of the resulting multidimensional LED. An extremely high breakdown voltage and low reverse leakage current as well as typical rectification behavior were observed in the I-V characteristics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1999.05a
• /
• pp.601-604
• /
• 1999

Electroluminescence(EL) devices based on organic thin films have attracted lots of interests in large-area light-emitting display. Recently, many EL researcher have interested a new emissive organic material. In this study, light-emitting organic electroluminescent devices were fabricated using Langmuir-Blodgett(LB) technique with new emissive organic material. This new emissive organic material were synthesis by our teams and we called PECCP [poly(3,6-N-2ethylhexyl carbazoly cyanoterephthalidene)] which has strong electron donor group and electron acceptor group in main chain repeat unit. This material has good solubility in common organic solvent such as chloroform. THF, etc. and has a good stability in air. In here, the new emissive material is applied to Langmuir-Blodgett(LB) method because our new material has a good stability in air. Optimum conditions of film deposition were examined by a surface pressure-area( $\pi$ -A) isotherms with various factors. The LB film were deposited on a indium Tin Oxide(ITO) glass. We were investigated by measuring current-voltage(I-V) characteristics. Also we were measured the UV/visible absorption at about 410nm and PL spectrum at about 530nm. We are attempt to the electroluminescence device properties of the new emissive material by Langmuir-Blodgett(LB) technique.

• Journal of the Korean Ceramic Society
• /
• v.56 no.3
• /
• pp.308-316
• /
• 2019

CdS_xSe_1-x ternary alloy nanowires (x = 0, 0.5, 1.0) were fabricated by in-situ synthesis on interdigitated electrode. Morphology analysis of the alloy nanowires according to the synthesis zone and composition analysis of the nanowires were carried out by SEM and EDX. The crystal structures of the alloy nanowires were studied by XRD analysis. The I-V characteristics of the nanowire photosensors were analyzed according to the intensity of incident light. The influence of zonal synthesis position on the photosensor response to the wavelength of incident light was also analyzed, and was found to be related to the bandgap of alloy nanowires. The analysis results indicate that photosensors with a specific photoresponse could be selected based on the composition of the source materials of nanowires as well as by controlling the in-situ synthesis zone.