• Title/Summary/Keyword: Light Emission

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메이서와 레이서 I

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    • 전기의세계
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    • v.18 no.6
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    • pp.58-63
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    • 1969
  • 필자는 메이서와 레이서에 대하여 되돌고이면 평이하게 정성적으로 기술하려고 한다. "Maser"란 말은 Microwave Amplification by Stimulated Emission of Radiation. 또 "Laser"란 Light Amplification by Stimulated Emission of Radiation의 약자이다. 이 메이서나 레이서는 진공관 원리에서 사용되는 자유전자대신 원자의 구속전자를 사용하여 에너지를 발생하든가 증폭작용을 하고 있다. 자극방사 (Stimulated emission)란 말은 원자에서 에너지 방사가 있기 위해서는 구속전자에 자극을 줘야하기 때문에 생긴 것이다. microwave란 말을 붙인 것은 전자에너지중 이 주파수범위내에 해당되는것에만 이용된다는 것이고 이와 마찬가지로 광(light)은 전자복사중 이 빛의 파장범위에서 작용된다는 것을 말한다. 따라서 이 메이서나 레이서는 매우 높은 주파수 범위에서 사용되는 에너지 발생장치 또는 증폭기라고 생각할 수 있다. 이 메이서나 레이서의 동작원리는 진공관증폭기의 동작원리와 다르므로 따라서 그 동작원리를 이해하려면 새로운 개념이 필요하게된다. 과학기술의 발달과 함께 과거의 전자기긱의 성능은 그 한계에 도달하게 되었고 통신, 천문학, 의학, 산업, 과학연구분야등에서 이 메이서와 레이서는 새로운 기회와 가능성을 제시해주고 있다.운 기회와 가능성을 제시해주고 있다.

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The properties of ZnO/MgO films prepared by ultrasonic spray pyrolysis (초음파분무법으로 제조한 ZnO/MgO막의 특성)

  • Choi, Mu-Hee;Ma, Tae-Young
    • Journal of Sensor Science and Technology
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    • v.14 no.5
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    • pp.362-367
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    • 2005
  • ZnO films were deposited on MgO substrates (ZnO/MgO) by ultrasonic spray pyrolysis. Substrate temperature varied from $250^{\circ}C$ to $350^{\circ}C$. The crystallographic properties and surface morphologies of the ZnO/MgO films were studied by X-ray diffraction and scanning electron microscopy. The properties of photoluminescence (PL) for the films were investigated by dependence of PL spectra on the substrate temperature and the annealing temperature. The ZnO/MgO films prepared at $350^{\circ}C$ showed the strongest Ultraviolet light emission peak at 18 K and 300 K among the films in this study. The annealing process increases the visible light emission, which is due to the increased oxygen vacancies.

Intramolecular Energy Transfer in Heteroleptic Red Phosphorescent Organic Light Emitting Diodes

  • Lee, Jun-Yeob;Kim, Sung-Hyun;Jang, Jyong-Sik
    • Proceedings of the Polymer Society of Korea Conference
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    • 2006.10a
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    • pp.232-232
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    • 2006
  • Intramolecular energy transfer in heteroleptic red phosphorescent dopant materials with mixed ligand units in one molecule was studied. 1-phenylisoquinoline(piq) and phenylpyridine(ppy) moieties were introduced as ligands for Ir based phosphorescent dopants and light emission mechanism was investigated. Intramolecular energy transfer from ppy ligand to piq ligand resulted in pure red emission without any green emission from ppy. Current efficiency of red devices was improved from 4 cd/A to 4.8 cd/A by using mixed ligand structures and deposition temperature of red dopant could be lowered by introducing ppy ligand.

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Flexible top emission organic light emitting diode on paper substrate

  • Lee, Chan-Jae;Moon, Dae-Gyu;Han, Jeong-In;Choi, Sung-Hoon;Oh, Myung-Hwan
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07b
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    • pp.1390-1393
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    • 2005
  • We fabricated an efficient top emission organic light emitting diode (FTEOLED) on paper substrates. For water proof and surface planarization, parylene of 5mm thick has been coated on copy paper substrate by vapor polymerization. As use this coating layer, fabrication of device was possible by photolithography and wet etching. Because paper is not transparent, we adapted top emission structure with transparent cathode and reflective anode. The FTOLED on paper showed the excellent electrical characteristic, $109cd/m^2$, 2.3cd/A at 10V.

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Effects of indium tin oxide top electrode formation conditions on the characteristics of the top emission inverted organic light emitting diodes

  • Kho, Sam-Il;Cho, Dae-Yong;Jung, Dong-Geun
    • 한국정보디스플레이학회:학술대회논문집
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    • 2002.08a
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    • pp.714-716
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    • 2002
  • Indium tin oxide (ITO) was used as the top anode of top emission inverted organic light emitting diodes (TEIOLEDs). TEIOLEDs were fabricated by deposition of an aluminum bottom cathode, an N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1, 1'-diphenyl-4, 4 1'-diamine (TPD) hole transport layer, a tris-8-hydroxyquinoline aluminum ($Alq_3$) emission layer, and an ITO top anode sequentially. ITO was deposited by r.f. magnetron sputtering without $O_2$ flow during the deposition. After the deposition, the deposited ITO layer was kept under oxygen atmosphere for the oxidation. The characteristics of the TEOILED were affected significantly by the post-deposition oxidation condition.

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Emission zone in organic light-emitting diodes(OLEDs)

  • Noh, Sok-Won;Lim, Sung-Taek;Shin, Dong-Myung
    • 한국정보디스플레이학회:학술대회논문집
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    • 2000.01a
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    • pp.127-128
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    • 2000
  • Organic light-emitting diodes(OLEDs) are constructed using multilayer organic thin films. The hole-transport layer is PVK and the emitting material is rubrene and $Alq_3$. The emitting layer is doped with rubrene partially. As the partially-doped layer migrate from the interface PVK/emitting layer, the emission peak of rubrene decrease and diminish. By comparing with the previous reports, we propose the zero-field hole injection barrier at ITO/PVK interface and hole-trapping effect of rubrene in host materials as predominant factor to determine the emission zone.

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Emission Properties of ZnO Grown by PLD (PLD로 증착한 ZnO 박막의 발광 특성 분석)

  • Bae, Sang-Hyuck;Lee, Sang-Yeol
    • Proceedings of the KIEE Conference
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    • 2000.11c
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    • pp.422-424
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    • 2000
  • ZnO thin films for light emission device have been deposited on sapphire and silicon substrates by pulsed laser deposition technique(PLD). A Nd:YAG laser was used with the wavelength of 355 nm. In order to investigate the emission properties of ZnO thin films, PL measurements with an Ar ion laser as a light source using an excitation wavelength of 351 nm and a power of 100 mW are used. All spectra were taken at room temperature by using a grating spectrometer and a photomultiplier detector. ZnO exhibited PL bands centered around 390, 510 and 640 nm, labeled near ultra-violet (UV), green and orange bands. Structural properties of ZnO thin films are analized with X-ray diffraction (XRD).

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An Inverted Bottom Emission Organic Light Emitting Device with a New Electron Injection Layer.

  • Lee, You-Jong;Kim, Joo-Hyung;Kwon, Soon-Nam;Hong, Mun-Pyo
    • 한국정보디스플레이학회:학술대회논문집
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    • 2007.08a
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    • pp.1023-1026
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    • 2007
  • Highly efficient inverted bottom emission organic light emitting device (IBOLED) with a structure of ITO/EIL/Alq3/NPB/WO3/Al was investigated. To enhance electron injection from ITO cathode to Alq3 EML layer, we introduced ultra thin Al layer and Liq layer between ITO and Alq3. The device characteristics showed tune on voltage of 4.5V, the maximum luminance of 21100 Cd/m2 and current efficiencies of 3.56 Cd/A.

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Electrical and Optical Properties of Top Emission OLEDs with CsCl Passivation Layer (CsCl 보호막을 이용한 전면발광 OLED의 전기 및 광학적 특성)

  • Kim, So-Youn;Moon, Dae-Gyu;Han, Jeong-In
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.2
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    • pp.173-177
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    • 2008
  • We have developed the transparent passivation layer for top emission organic light emitting diodes using CsCl thin film by the thermal evaporation method. The CsCl film was deposited on the Ca/Ag semitransparent cathode. The optical transmittance of Ca/ Ag/CsCl triple layer is higher than that of Ca/Ag double layer in the visible range. The device with a structure of glass/Ni/2-TNATA/a-NPD/Alq3:C545T/BCP/Alq3/Ca/Ag/CsCl results in higher efficiency than the device without CsCl passivation layer. The device without CsCl thin film shows a current efficiency of 7 cd/A, whereas the device passivated with CsCl layer shows an efficiency of 10 cd/A. This increase of efficiency isresulted from the increased optical extraction by the CsCl passivation layer.

Measurement of Multimode Fiber Bandwidth by the Fourth-Order Spectra of Amplified Spontaneous Emission

  • Moon, Sucbei;Kim, Dug Young
    • Journal of the Optical Society of Korea
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    • v.18 no.1
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    • pp.15-22
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    • 2014
  • We present a novel bandwidth measurement scheme for multimode optical fibers. Amplified spontaneous emission (ASE) radiation was utilized for a source of intrinsically modulated light with a wide modulation bandwidth. In our measurement scheme, the continuous-wave (CW) ASE light that passed through a multimode fiber (MMF) under test was analyzed by the fourth-order power with a high-speed photodetector and an electric spectrum analyzer. The modulation transfer function of the multimode fiber could be directly measured with the photoelectric spectra in the modulation frequency domain. The measurement result of our method was experimentally compared to that of the conventional measurement scheme based on the impulse response measurement. It has been found that our scheme provides a stable measurement means of MMF characterization that is suitable for the field testing due to the simplicity of the system.