• Journal of the Korean Vacuum Society
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• v.6 no.S1
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• pp.43-46
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• 1997

High resolution x-ray diffraction and two dimensional triple axis mapping were used to characterize a group of GaN layers of about 1.1$\mu$m grown by direct current plasma molecular beam epitaxy technique on 6H-SiC(0001). A FWHM of 11.9 arcmins for an $\omega$ scan and 1.2 arcmins for an $\omega$/2$\theta$ scan were observed. A careful study of the rocking curves showed there were some large mosaics in the GaN layer and a tilt of $0.029^{\circ}$ between the GaN layer and the SIC substrate was detected. The two dimensional triple axis mapping showed that the GaN mosaica were disoriented in the (0001) plane but rather uniformed in direction perpendicular to the plane. A mosaics were disoriented in the (0001) plane but rather uniformed in direction perpendicular to the plane. A mosaic model was deduced to explain the phenomenon and the dislocation density was estimated to be about~$10^9\;\textrm{cm}^{-2}$ acc ding to the model.

• Nuclear Engineering and Technology
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• v.52 no.7
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• pp.1537-1544
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• 2020

Molecular dynamics (MD) simulations were conducted to investigate the temperature effects on the primary damage in gallium nitride (GaN) material. Five temperatures ranging from 300 K to 900 K were studied for 10 keV Ga primary knock-on atom (PKA) with inject direction of [0001]. The results of MD simulations showed that threshold displacement energy (E_d) was affected by temperatures and at higher temperature, it was larger. The evolutions of defects under various temperatures were similar. However, the higher temperature was found to increase the peak number, peak time, final time and recombination efficiency while decreasing the final number. With regard to clusters, isolated point defects and little clusters were common clusters and the fraction of point defects increased with temperature for vacancy clusters, whereas it did not appear in the interstitial clusters. Finally, at each temperature, the number of Ga interstitial atoms was larger than that of N and besides that, there were other different results of specific types of split interstitial atoms.

• Asian Pacific Journal of Cancer Prevention
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• v.13 no.12
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• pp.6463-6468
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• 2012

Purpose: To evaluated the effect of the gambogic acid (GA), one of the effective components of Garcinia, in combination with a new multi-targeted oral medication, sunitinib (SU) on renal cancer cell proliferation in vitro and on tumor growth in vivo. Methods: After treatment with GA or SU, either alone or in combination, MTT and FACS analysis were used to examine cell viability and cycle distribution of the renal carcinoma cell lines 786-0 and Caki-1. Western blotting was employed to examine the expression of proteins related to the cell cycle and vascular formation. Furthermore, a xenograft model was applied to study the antitumor efficacy of SU or GA alone or in combination, with immunohistochemistry to detect expression of proteins related to xenograft growth and angiogenesis. Western blotting was used to examine NF-${\kappa}B$ signaling pathway elements in xenografts. Results: Treatment of 786-0 and Caki-1 cells with GA or SU resulted in decreased tumor cell proliferation, especially with joint use. Cells accumulated more strongly in the sub-G1 phase after joint treatment with GA and SU than treatment of GA and SU alone. Western blotting arrays showed 1 protein significantly upregulated, 2 proteins downregulated, and 2 proteins unchanged. Moreover, combined use of GA and SU inhibited the growth and angiogenesis of xenografts generated from Caki-1 significantly. Immunohistochemistry arrays showed downregulation of the expression of proteins promoting xenograft growth and angiogenesis, and Western blotting showed inhibition of the NF-${\kappa}B$ signaling pathway after treatment by GA alone and in combination with SU in xenografts. Conclusions: Our results show that the joint use of GA and SU can provide greater antitumor efficacy compared to either drug alone and thus may offer a new treatment strategy for renal cell carcinoma.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1564-1567
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• 2009

Cu(In,Ga)$Se_2$ (CIGS) thin films were formed using CIGS bulk by electron-beam evaporation method with an evaporation current from 20 mA to 90 mA. The experimental results showed that the chemical compositions and the properties of CIGS films varied with the different evaporation current. The Cu-rich CIGS film was deposited successfully with a band gap of 1.20 eV when the evaporation current was 90 mA.

• Journal of the Korean Vacuum Society
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• v.4 no.S2
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• pp.75-78
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• 1995

Gas source molecular beam epitaxy have been used in the growth of InAlAsAnGaAs MSM-PD structure, in which InAlAs ultra thin layer was used as Schottky barrier enhancement material. High performance MSM-PDs have been constructed on the grown wafer. High breakdown voltage of >30V, low dark current density of $3pA/\mu \textrm{cm}^2$ at 10V bias and fast transient response of <20ps rise time / <40ps FWHM have been measured, which confirm the results that GSMBE is a superior method for the growth of materials with high layer and interfacial quality, especially for InP based InAIAdInGaAs system.

• Journal of Information Processing Systems
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• v.20 no.2
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• pp.263-272
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• 2024

A model based on genetic algorithm optimization, GA-SVM, is proposed to warn university students of their status. This model improves the predictive effect of support vector machines. The genetic optimization algorithm is used to train the hyperparameters and adjust the kernel parameters, kernel penalty factor C, and gamma to optimize the support vector machine model, which can rapidly achieve convergence to obtain the optimal solution. The experimental model was trained on open-source datasets and validated through comparisons with random forest, backpropagation neural network, and GA-SVM models. The test results show that the genetic algorithm-optimized radial basis kernel support vector machine model GA-SVM can obtain higher accuracy rates when used for early warning in university learning.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2008.11a
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• pp.447-448
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• 2008

• Proceedings of the Korean Vacuum Society Conference
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• 2008.08a
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• pp.126-126
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• 2008

• Proceedings of the Korean Radioactive Waste Society Conference
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• 2015.10a
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• pp.89-90
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• 2015

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1997.06a
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• pp.145-145
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• 1997

Recent progress of electric technology requires new piezoelectric crystals having superior properties such as zero temperature coefficients and large electromechanical coupling factors. We have developed a series of new leading chandidates, La$_3$Ga5SiO14(langasite, LGS), La3Nb0.5Ga5.5O14(LNG), La3Ta0.5O14(LTG), to satisfy those requirements. High quality LGS, LNG and LTG single crystals, with dimensions of 2 inches in diameter, were successfully grown by the Czochralski method at a pulling rate of 1mm/h. Since no variation of chemical composition was observed when whole melt in a crucible was crystallized, congruency of these compositions was confirmed. Physical constants such as elastic constants, dielectric constants and piezoelectric constants were measured. Filters and oscillators made of grown LGS, LNG and LTG single crystals showed superior properties such as three times wider passband than that of quartz, low insertion loss and easy processing, Langasite family crystals were shown to be superior materials to other known materials such as quartz, LiTaO$_3$, $\alpha$-AlPO$_4$ and Li$_2$B$_4$O7.