• 반도체디스플레이기술학회지
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• 제16권2호
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• pp.44-48
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• 2017

We explain optical and electrical properties of top and bottom-emission structured alternating-current powder electroluminescent devices (ACPELDs) with Ga-doped ZnO(GZO) transparent electrode. The top-emission ACPELDs were layered as the metal electrode/dielectric layer/emission layer/top transparent electrode and the bottom-emission ACPELDs were structured as the bottom transparent electrode/emission layer/dielectric layer/metal electrode. The yellow-emitting ZnS:Mn, Cu phosphor and the barium titanate dielectric layers were layered through the screen printing method. The GZO transparent electrode was deposited by the sputtering, its sheet resistivity is $275{\Omega}/{\Box}$. The transparency at the yellow EL peak was 98 % for GZO. Regardless of EL structures, EL spectra of ACPELDs were exponentially increased with increasing voltages and they were linearly increased with increasing frequencies. It suggests that the EL mechanism was attributed to the impact ionization by charges injected from the interface between emitting phosphor layer and the transparent electrode. The top-emission structure obtained higher EL intensity than the bottom-structure. In addition, charge densities for sinusoidal applied voltages were measured through Sawyer-Tower method.

• 한국결정성장학회지
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• 제26권2호
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• pp.58-61
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• 2016

Basic 암모노써멀 방법을 사용하여 벌크 GaN 단결정을 성장시켰다. 종자 결정은 Hydride vapor phase epitaxy법으로 성장한 c면의 GaN 템플릿을 사용하고 광화제는 sodium metal, amide, azide를 사용하였다. 결정 성장 온도는 $500{\sim}600^{\circ}C$, 성장 압력은 2~3 kabr에서 실시하였다. c 축의 결정 성장 속도는 운용 압력이 증가함에 따라 선형적으로 증가하였다. Cathodoluminescence로 측정한 평균 전위 밀도는 $1{\times}10^5/cm^2$였다. Double Crystals X-ray Diffraction로 측정한 (002)면의 반치폭은 Ga 면에 대해서는 약 270 arcsec, N 면에 대해서는 약 80 arcsec이었다.

• EDISON SW 활용 경진대회 논문집
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• 제2회(2013년)
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• pp.264-265
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• 2013

현재 반도체 산업에서는 고성능 저전력과 더불어 고 집적도가 가능한 재료 및 구조에 크게 주목하고 있고 여러 가지 이슈를 만족시키기 위해서 다양한 재료와 구조가 많이 연구 되고 있다. 특히 3-5족 화합물로 만들어진 나노선은 소자의 미세한 구조적 제어를 가능하게 하고 1차원 구조적 특성에 의해 전기적 특성이 우수하여 전계효과 트랜지스터(FET) 소자에 적용 시키기 적합하다고 알려져 있다.[1,2] 이번 연구에서는 최근 많이 연구되고 있는 GaAs 나노선을 기반으로 하는 전계효과 트랜지스터의 소자특성 및 전기적인 특성에 대해 EDISON 시뮬레이터를 이용해 알아보았다. 또한 채널 두께 및 길이와 게이트 산화막 층 두께에 따른 소자의 전기적 특성에 대해서도 연구하였다. 이를 통해 GaAs 나노선 기반 전계효과 트랜지스터의 최적화된 소자를 알아 보았다.

• Current Optics and Photonics
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• 제5권1호
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• pp.72-76
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• 2021

The polarized micro-photoluminescence spectrum was analyzed to investigate the anisotropic localized states in a single GaAs quantum ring. An energy difference of ~0.1 meV was observed from the perpendicularly polarized spectrum measured by a pair of linear analyzers. Spectral dependence of the polarized emission was also characterized in terms of rotation and ellipticity angles using four Stokes parameters. While the rotation angle indicates the symmetric axis of an anisotropic quantum ring with a small variation (± 2°), the ellipticity angle varies from 7.4° down to -2.5°. We conclude that optical anisotropy and birefringence are induced by the crescent-like lateral shape of localized states.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2005년도 제28회 학술발표회 초록집
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• pp.100-100
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• 2005

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제36회 동계학술대회 초록집
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• pp.157-157
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• 2009

• 대한방사선방어학회:학술대회논문집
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• 대한방사선방어학회 2011년도 추계 학술발표회 및 심포지엄
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• pp.246-247
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• 2011

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2013년도 자성 및 자성재료 국제학술대회
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• pp.126-127
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• 2013

• 한국방사성폐기물학회:학술대회논문집
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• 한국방사성폐기물학회 2016년도 추계학술논문요약집
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• pp.127-128
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• 2016

• Biomolecules & Therapeutics
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• 제30권2호
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• pp.151-161
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• 2022

This study elucidates the anti-cancer potential of gallic acid (GA) as a promising therapeutic agent that exerts its effect by regulating the PI3K/Akt pathway. To prove our research rationale, we used diverse experimental methods such as cell viability assay, colony formation assay, tumor spheroid formation assay, cell cycle analysis, TUNEL assay, Western blot analysis, xenograft mouse model and histological analysis. Treatment with GA inhibited cell proliferation in dose-dependent manner as measured by cell viability assay at 48 h. GA and cisplatin (CDDP) also inhibited colony formation and tumor spheroid formation. In addition, GA and CDDP induced apoptosis, as determined by the distribution of early and late apoptotic cells and DNA fragmentation. Western blot analysis revealed that inhibition of the PI3K/Akt pathway induced upregulation of p53 (tumor suppressor protein), which in turn regulated cell cycle related proteins such as p21, p27, Cyclin D1 and E1, and intrinsic apoptotic proteins such as Bax, Bcl-2 and cleaved caspase-3. The anti-cancer effect of GA was further confirmed in an in vivo mouse model. Intraperitoneal injection with GA for 4 weeks in an A549-derived tumor xenograft model reduced the size of tumor mass. Injection of them downregulated the expression of proliferating cell nuclear antigen and p-Akt, but upregulated the expression of cleaved caspase-3 in tumor tissues. Taken together, these results indicated that GA hindered lung cancer progression by inducing cell cycle arrest and apoptosis, suggesting that GA would be a potential therapeutic agent against non-small cell lung cancer.