• Proceedings of the Korean Vacuum Society Conference
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• 2006.02a
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• pp.165-165
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• 2006

• Proceedings of the Korean Vacuum Society Conference
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• 2002.06a
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• pp.126-126
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• 2002

• The Journal of the Korean dental association
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• v.37 no.4 s.359
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• pp.239-241
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• 1999

• Proceedings of the Korean Vacuum Society Conference
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• 2004.02a
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• pp.155-155
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• 2004

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.309.1-309.1
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• 2014

III-N계 기반의 광 반도체는 직접 천이형 넓은 밴드갭 구조를 갖고 있기 때문에 자외선에서 가시광을 포함한 적외선까지 포함한 폭 넓은 발광이 가능하여 조명 및 디스플레이 관련 차세대 광원으로 많은 관심을 받고 있다. 하지만 p형 GaN의 경우, 상온에서 도펀트로 사용되는 마그네슘(Mg)이 수소(H)와 결합하여 보상 효과를 나타내기 때문에 높은 정공농도를 갖기에 어려움이 있다고 알려져 있다. 따라서, 대부분의 연구 그룹에서는 GaN계 LED 소자를 성장 후 rapid thermal annealing 공정이 요구되고 있고, 최근에는 박막 성장 후 반응로 내에서 자체적으로 열처리를 진행하고 있는 실정이다. 하지만, 열처리 조건은 LED 소자의 발광특성에 큰 영향을 주기 때문에 본 연구에서는 반응로에서 열처리가 된 LED 샘플에 대해 추가적인 열처리 공정의 유무에 따른 GaN계 LED소자의 광학적 및 전기적 특성에 대해 알아보고자 하였다. 금속유기화학증착법을 이용하여 c-면 사파이어 기판에 저온 GaN 완충층 및 $2.0{\mu}m$두께의 GaN 박막을 성장한 후, $3.0{\mu}m$두께의 n-형 GaN에피층과 InGaN/GaN 5주기의 양자우물구조를 형성하고 $0.1{\mu}m$두께의 p형 GaN층을 성장하였다. P-형 GaN층 성장 후 온도를 내리면서 $750^{\circ}C$, N2 분위기에서 5분간 Mg 활성화를 위한 열처리를 반응로에서 in-situ로 진행하였다. 그 후 급속열처리 장비에 장입하여 $650^{\circ}C$, N2 분위기에서 5분간 추가적인 열처리를 진행하여 추가 열처리 유무에 따른 LED소자의 특성을 분석하였다. 추가적인 열처리 유무에 따른 LED소자의 레이저 여기에 의한 포토루미네선스 스펙트럼과 전계발광 스펙트럼을 조사한 바, 포토루미네선스 스펙트럼의 경우 추가적인 열처리를 진행하였을 경우, 이전보다 발광 세기가 감소함을 나타내었다. 이는 추가적인 열처리에 의해 InGaN/GaN 활성층이 손상되었기 때문이라고 추측된다. 그러나 전계발광 스펙트럼에서는 활성층이 손상되었음에도 불구하고 전계 발광세기가 3배 가량 증가한 것을 확인할 수 있었다. 또한, 20 mA 인가 시 4.2 V 에서 3.7 V로 전압이 감소하였다. 상기 결과로 미루어 볼 때 열처리에 의한 InGaN/GaN 활성층 손상에도 불구하고 광 세기가 크게 증가한 것은 금속유기화학증착장치의 in-situ 열처리에 의한 Mg가 충분히 활성화되지 못하였고, 추가적인 열처리에 의하여 p형 GaN에서 Mg-H 복합체의 분리로 인한 Mg 활성화가 더욱더 효과적으로 이루어졌기 때문이라고 추측된다.

• Horticultural Science & Technology
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• v.28 no.5
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• pp.750-756
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• 2010

This study was performed to investigate the role of phytohormones in the bulbing of garlic in order to assess the yield and quality. The effect on endogenous plant hormones such as gibberellin (GA) content was also examined during growth stage i.e. clove differentiation to bulbing in garlic. More than 18 gibberellins in garlic were identified with extensive gas chromatograph-mass spectrometry-selected ion monitoring (GC-MS-SIM) quantitative analysis. The results showed that GAs were biosynthesized by both non C-13 hydroxylation pathway (NCH) and early C-13 hydroxylation pathway (ECH) in garlic plant. It was also revealed that NCH pathway leading to synthesis of bioactive $GA_4$ was the more prominent GA biosynthesis pathway than ECH pathway in which bioactive $GA_1$ was synthesized. Total GAs level was gradually increased from clove differentiation to bulbing and later decreased, which portrays the active role of GA in differentiation. The biosynthesis ratio of bioactive $GA_4$ and $GA_1$ concentration was similar to that of total GAs content, which was closely related with bulb development in garlic.

• 한국정보통신설비학회:학술대회논문집
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• 2005.08a
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• pp.115-119
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• 2005

In this paper, we propose a method that search the sweet spot of array antenna beam, and keep it for fast speed transmission in millimeter wave on single array antenna link. We use TDD(Time Division Duplex) as transfer method, and it transfers the control data of antenna. The proposed method is the modified genetic algorithm which selects a superior initial group through slave-processing in order to resolve the local solution of genetic algorithm. The efficiency of the proposed method is verified by means of simulations with white Gaussian noise and not on single array antenna link.

• Journal of Microbiology and Biotechnology
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• v.15 no.4
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• pp.800-808
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• 2005

Leuconostoc mesenteroides SY1, an isolate from kimchi, was able to ferment $\alpha$-galactosides, such as melibiose and raffinose. $\alpha$-Galactosidase ($\alpha$-Gal) activity was higher in cells grown on melibiose and raffinose than cells grown on galactose, sucrose, and fructose. $\alpha$-Gal activity was not detected in cells grown on glucose, indicating the operation of carbon catabolite repression (CCR). A 6 kb DNA fragment was PCR amplified using a primer set based on the nucleotide sequence of a putative $\alpha$-galactosidase gene (aga) from L. mesenteroides ATCC 8293. Nucleotide sequencing of the 6 kb fragment confirmed the presence of aga and other genes involved in the galactosides utilization, and the gene order was galR (transcriptional regulator)-aga-gaIK (galactokinase)-gaIT (galactose-1-phosphate uridylyltransferase). Northern blotting experiment showed that aga, gaIK, and gaIT constituted the same operon, that the transcription was induced by galactosides, such as melibiose and raffinose, whereas gaIR was independently transcribed as a monocistronic gene, and that the level of transcription was fairly constant. The aga was overexpressed in E. coli BL21 (DE3) using pET26b(+) vector, and $\alpha$-Gal was accumulated in E. coli as an inclusion body.

• Korean Journal of Materials Research
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• v.22 no.4
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• pp.185-189
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• 2012

We report plasma-assisted molecular beam epitaxy of $In_XGa_{1-X}N$ films on c-plane sapphire substrates. Prior to the growth of $In_XGa_{1-X}N$ films, GaN film was grown on the nitride c-plane sapphire substrate by two-dimensional (2D) growth mode. For the growth of GaN, Ga flux of $3.7{\times}10^{-8}$ torr as a beam equivalent pressure (BEP) and a plasma power of 150 W with a nitrogen flow rate of 0.76 sccm were fixed. The growth of 2D GaN growth was confirmed by $in-situ$ reflection high-energy electron diffraction (RHEED) by observing a streaky RHEED pattern with a strong specular spot. InN films showed lower growth rates even with the same growth conditions (same growth temperature, same plasma condition, and same BEP value of III element) than those of GaN films. It was observed that the growth rate of GaN is 1.7 times higher than that of InN, which is probably caused by the higher vapor pressure of In. For the growth of $In_xGa_{1-x}N$ films with different In compositions, total III-element flux (Ga plus In BEPs) was set to $3.7{\times}10^{-8}$ torr, which was the BEP value for the 2D growth of GaN. The In compositions of the $In_xGa_{1-x}N$ films were determined to be 28, 41, 45, and 53% based on the peak position of (0002) reflection in x-ray ${\theta}-2{\theta}$ measurements. The growth of $In_xGa_{1-x}N$ films did not show a streaky RHEED pattern but showed spotty patterns with weak streaky lines. This means that the net sticking coefficients of In and Ga, considered based on the growth rates of GaN and InN, are not the only factor governing the growth mode; another factor such as migration velocity should be considered. The sample with an In composition of 41% showed the lowest full width at half maximum value of 0.20 degree from the x-ray (0002) omega rocking curve measurements and the lowest root mean square roughness value of 0.71 nm.

• Journal of IKEEE
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• v.27 no.3
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• pp.288-295
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• 2023

In this work, we investigated the role of oxygen annealing on the performance of Metal-Semiconductor-Metal (MSM) UV photodetector (PD) fabricated by radio frequency (RF)-sputtered Ga₂O₃ films on SiC substrates. Oxygen-nnealed Ga₂O₃ films displayed a notable increase in photocurrent and a faster decay time, indicating a decrease in persistent photoconductivity. This improvement is attributed to the reduction of oxygen vacancies and variation of defects by oxygen post-annealing. Our findings provide valuable insights into enhancing PD performance through oxygen annealing.