• Korean Journal of Optics and Photonics
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• v.20 no.2
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• pp.71-75
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• 2009

A compact electric field probe sensor incorporating two different electro-optic materials of $LiNbO_3$ and GaAs was proposed and fabricated, and it was used to measure the strength of the horizontal and vertical fields generated by a microstrip ring-resonator filter. The sensitivities of the sensors in $LiNbO_3$ and GaAs were $9.315{\mu}V/\sqrt{Hz}$ and ${\sim}49.346{\mu}V/\sqrt{Hz}$ respectively, and their signal to noise ratios were approximately ${\sim}50\;dB$ and ${\sim}40\;dB$ respectively. And the operating frequency range was up to ${\sim}1.2\;GHz$. The electric field profile for the test circuit was scanned and found to be in good agreement with that obtained by using the HFSS simulation.

• Journal of the Korean Ceramic Society
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• v.51 no.3
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• pp.208-217
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• 2014

$La_{0.8}Sr_{0.2}Ga_{0.8}Mg_{0.2-x}Zn_xO_{2.8}$(LSGMZ, X=0-0.05) was prepared using a solid state reaction method. Two secondary phases ($LaSrGaO_4$ and $LaSrGa_3O_7$) of powders were identified by X-ray diffraction analysis. The relative amount of these secondary phases depended on the calcination conditions (temperature and time) and Zn content. The sintering density of LSGMZ was enhanced by increasing the Zn content and calcination temperature at the low sintering temperatures ($1250-1300^{\circ}C$). The relationship between the sintering density of LSGMZ and the synthesis conditions was discussed considering the phase analysis results.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.198-198
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• 2010

산화물 반도체는 넓은 밴드갭을 가지고 있어 가시광에서 투명하며 높은 이동도로 디스플레이 구동 회로 집적에 유리하다. 또한 가격 및 공정 측면에서도 기존의 Si 기판 소자에 비해 여러 장점을 가지고 있어 차세대 디스플레이의 핵심 기술로 산화물반도체에 대한 관심이 높아지고 있다. 본 연구는 RF 동시 스퍼터링법을 이용하여 Zn-Sn-O 박막을 제조하고, 그 전기적, 광학적, 구조적 특성에 대해 조사하였다. 일정한 증착 온도($100^{\circ}C$)에서 ZnO와 $SnO_2$ 타켓의 인가 파워를 조절하여 Sn/(Zn+Sn) 성분비가 약 40~85%인 Zn-Sn-O 박막을 제조하였다. Sn 함량이 증가할수록 박막의 비저항은 약 $2{\times}10^{-1}$ (Sn 45%)에서 약 $2\;{\times}\;10^{-2}\;{\Omega}{\cdot}cm$ (Sn 67%)까지 감소하다가 다시 증가하는 경향을 보였다. 이 때 캐리어 농도는 $3\;{\times}\;10^{18}$에서 $4\;{\times}\;10^{19}\;cm^{-3}$으로 증가하였으며, 이동도는 11에서 $8\;cm^2/V{\cdot}s$로 약간 감소하였다. XRD분석결과, 제조된 모든 Zn-Sn-O 박막은 비정질 구조를 가짐을 확인하였다. 투과율은 박막 내 Sn함량 증가에 따라 감소하나 모든 시편이 약 70%이상의 투과도를 나타내었다. Zn-Sn-O 박막의 Ga 도핑 영향을 확인하기 위해 ZnO 타켓 대신 갈륨이 5.7 wt.% 도핑된 GZO 타켓을 사용하여 동일한 공정조건에서 박막을 제조하였다. Ga이 첨가된 Zn-Sn-O 박막은 구조적 특성과 광학적 특성에서는 큰 차이를 보이지 않았으나, 전기적 특성의 뚜렷한 변화가 관찰되었다. Sn 함량이 45%인 Zn-Sn-O 박막의 경우, 캐리어 농도가 $3.1\;{\times}\;10^{18}$에서 Ga 도핑 효과로 인해 $1.7\;{\times}\;10^{17}\;cm^{-3}$으로 크게 감소하고 이동도는 11에서 $20\;cm^2/V{\cdot}s$로 증가하였다. 따라서 본 연구는 Zn-Sn-O 비정질 박막에 Ga을 도핑함으로써 산화물 반도체재료로서 요구되는 물성을 만족시킬 수 있다는 가능성을 제시하였다.

• (The)Study of the Eastern Classic
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• no.57
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• pp.359-382
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• 2014

This paper is an essay on Chaekmun(Answer papers of official examination in Pre-modern period). Especially I tried to point out the possibility of practical use in the field of politics. For this purpose, I analyzed an examination paper written by Lee Ga-hwan, and the title is "a debate about construction of the Miang palace". Exquisite writing skill is also important in Chaekmun, but it is not everything. The subject of Chaekmun concerns various fields such like politics, economy, society, culture, and history. So that writers should have sufficient knowledge and opinion. The King, as an examiner, wants to test retainers' ability both in writing and politics. In this paper, I focused on using in field of politics between the King and the retainers. And as an good example, I analyzed a paper which dealt the event of building huge palace named Miang palace. That is because the King reflects his concerns by setting exam questions. And his concerns also could not be free of contemporary political conditions. Therefore we should be careful of reading those articles. Regarding this, Lee Ga-hwan's article had a distinctive characteristic. Unlike any other articles dealing with same event, he tried to access through creative point of view. And his thought were much close to the King's heart.

• Journal of Chest Surgery
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• v.41 no.2
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• pp.170-176
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• 2008

Background: Bioprosthetic devices for treating cardiovascular diseases and defects may provide alternatives to autologous and homograft tissue. We evaluated the mechanical and physical conditions of a porcine pericardial bioprosthesis treated with Glutaraldehyde (GA), Ethanol, or Sodium dodecylsulfate (SDS) before implantation. Material and Method: 1) Thirty square-shaped pieces of porcine pericardium were fixed in 0.625%, 1.5% or 3% GA solution. 2) The tensile strength and thickness of these and other bioprosthesis, including fresh porcine pericardium, fresh human pericardium, and commercially produced heterografts, were measured. 3) The tensile strength and thickness of the six treated groups (GA-Ethanol, Ethanol-GA, SDS only, SDS-GA, Ethanol-SDS-GA and SDS-Ethanol-GA) were measured. Result: 1) Porcine pericardium fixed in 0.625% GA the thinnest and had the lowest tensile strength, with thickness and tensile strength increasing with the concentration of GA solution. The relationship between tensile strength and thickness of porcine pericardium increased at thicknesses greater than 0.1mm (correlation-coefficient 0.514, 0<0.001). 2) There were no differences in tensile strength or thickness between commercially-produced heterografts. 3) Treatment of GA, ethanol, or SDS minimally influenced thickness and tensile strength of porcine pericardium, except for SDS alone. Conclusion: Porcine pericardial bioprosthesis greater than 0.1 mm thick provide better handling and advantageous tensile strength. GA fixation did not cause physical or mechanical damage during anticalcification or decellularization treatment, but combining SDS-ethanol pre-treatment and GA fixation provided the best tensile strength and thickness.

• Korean Journal of Microbiology
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• v.52 no.1
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• pp.32-39
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• 2016

Coastal plant species Tetragonia tetragonoides (Pall.) Kuntze native to the Dokdo islands was sampled and then 17 endophytic fungi were purely isolated based on morphological differences. The fungal isolates were characterized by their growth properties under NaCl concentration or pH gradient. Culture filtrates of the 17 fungal isolates were treated to Waito-c rice (WR) seedlings for verifying plant growth-promoting activity. As the results, YH103 strain showed the highest plant growth-promoting activity among them. Phylogenetic analysis of the isolates was done by the maximum likelihood method based on partial internal transcribed spacer region (ITS region: contaning ITS1, 5.8S, and ITS2), beta-tubulin (BenA), and calmodulin (CaM) gene sequences. Chromatographic analysis of the strain YH103 culture filtrate showed the existence of gibberellins ($GA_4$, $GA_7$, $GA_8$, and $GA_{19}$). Finally, the strain YH103 was identified as Aspergillus tubingensis by microscopic observation and molecular analysis and, to our knowledge, this is the first report of GAs producing A. tubingensis.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.313-313
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• 2014

GaN계 물질 기반의 광 반도체는 조명 및 디스플레이 관련 차세대 광원으로 많은 관심을 받고 있고, 효율 증대를 위한 에피, 소자 구조 및 패키지 등의 많은 연구가 진행되고 있다. 특히, 투명 전극을 이용한 광 추출 효율의 증가에 대한 연구는 전체 외부양자효율을 증가시키는 중요한 기술로 각광을 받고 있다. 이러한 투명전극은 가시광 영역의 빛을 투과하면서도 전기 전도성을 갖는 기능성 박막 전극으로 산화인듐주석이 널리 사용되고 있으나 인듐 가격의 상승과 산화인듐주석 전극 자체의 크랙 특성으로 인하여 많은 문제점이 지적되고 있다. 이러한 문제를 극복하기 위하여 GaN계 발광 다이오드에 있어서 산화인듐주석 투명 전극의 대체 물질들에 대한 많은 연구들이 활발하게 이루어 지고 있다. 특히, 투명전극 층으로 사용되는 산화인듐주석 대체 박막으로 산화아연에 대한 연구가 각광을 받고 있는 실정이다. 또한, 발광 다이오드의 효율 증가를 위해 발광소자에 표면 요철 구조 형성과 나노구조체 형성 등 박막 표면의 구조 변화를 통한 광추출효율 향상에 대한 많은 연구가 진행되고 있다. 본 연구에서는 산화아연 박막을 투명전극으로 사용하였으며 광추출효율 향상을 위해 산화아연 투명전극에 패터닝을 형성하고, 그 위에 산화아연 나노막대를 형성하여 기존에 사용하던 산화아연 투명전극보다 우수한 추출효율 및 전류 퍼짐 향상 구조를 제안하고 이에 따른 LED 소자의 광추출효율 향상을 연구하였다. 금속유기화학증착법을 이용하여 c-면 사파이어 기판에 n-GaN, 5주기의 InGaN/GaN 다중양자우물 구조 및 p-GaN의 간단한 LED구조를 성장한 후, p-GaN층 상부에 원자층 증착법을 이용하여 투명전극인 산화아연 박막을 60 nm 두께로 증착하였다. 산화아연 투명전극만 증착한 LED-A와 이후 0.1% HCl을 이용한 습식식각을 통하여 산화아연 투명전극에 육각형 모양의 패턴을 형성한 LED-B, 그리고 LED-B위에 전기화학증착법을 이용하여 $1.0{\mu}m$의 산화아연 나노 막대를 증착한 LED-C를 제작하였다. LED-A, -B 및 -C에 대한 표면 구조는 SEM이미지를 통하여 확인한 바 산화아연의 육각 패턴과 그 상부에 산화아연의 나노막대가 잘 형성된 것을 확인하였다. I-L 분석으로부터 패턴이 형성되지 않은 산화아연 투명전극으로만 구성된 LED-A에 비하여 산화아연 투명 전극에 육각 패턴을 형성한 LED-B의 전계 발광 세기가 더욱 큰 것을 확인하였다. 또한, 육각 패턴에 산화아연 나노막대를 성장시켜 융합구조를 형성한 LED-C에서는 LED-B와 -A보다 더 큰 전계 발광세기를 확인할 수 있었다. 특히, 인가 전류가 고전류로 갈수록 LED-C의 발광세기가 더욱 강해지는 것으로 효율저하현상 또한 나노융합구조의 LED-C에서 확인할 수 있었다. 이는 기존 산화아연 투명전극에 육각형의 패턴 및 나노막대융합구조를 형성할 경우 전류퍼짐현상을 극대화 할 뿐 아니라, 추가적인 광추출효율 향상 효과에 의해 질화갈륨 기반LED 소자의 광효율이 증가된 것으로 판단된다.

• ETRI Journal
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• v.38 no.4
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• pp.675-684
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• 2016

This paper demonstrates the effect of fluoride-based plasma treatment on the performance of $Al_2O_3/AlGaN/GaN$ metal-insulator-semiconductor heterostructure field effect transistors (MISHFETs) with a T-shaped gate length of $0.20{\mu}m$. For the fabrication of the MISHFET, an $Al_2O_3$ layer as a gate dielectric was deposited using atomic layer deposition, which greatly decreases the gate leakage current, followed by the deposition of the silicon nitride layer. The silicon nitride layer on the gate foot region was then selectively removed through a reactive ion etching technique using $CF_4$ plasma. The etching process was continued for a longer period of time even after the complete removal of the silicon nitride layer to expose the $Al_2O_3$ gate dielectric layer to the plasma environment. The thickness of the $Al_2O_3$ gate dielectric layer was slowly reduced during the plasma exposure. Through this plasma treatment, the device exhibited a threshold voltage shift of 3.1 V in the positive direction, an increase of 50 mS/mm in trans conductance, a degraded off-state performance and a larger gate leakage current compared with that of the reference device without a plasma treatment.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.106-107
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• 2009

In this study, We investigated the effects of substrate temperature on the electrical and optical properties of Ga-, B-codoped ZnO(GZOB) thin films. GZOB thin films were deposited on glass substrate with various substrate temperature in the range from R.T. to $500\;^{\circ}C$ by DC magnetron sputtering. In the reslt, GZOB films at $400\;^{\circ}C$ exhibited a low resistivity value of $8.67\;{\times}\;10^{-4}\;{\Omega}-cm$, and a visible transmission of 80% with a thickness of 300 nm. This result indicated that the addition of Ga and B in ZnO films leads to the improvement of conductivity and transparent. From the result, we can confirm the possibility of the application as transparent conductive electrodes.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.132-132
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• 2008

Boron doped ZnO:Ga(GZOB) thin films were prepared on glass substrates by DC magnetron sputtering. Influence of the annealing treatment on the electrical and optical properties of GZOB thin films were investigated. The west resistivity of $9.6\times10^{-4}\Omega$-cm was obtained at an annealing temperature of $400^{\circ}C$. The average transmittance of the films is over 80% in the visible range. It was also shown that by introducing boron impurity into GZO system improve the uniformity, the resistivity, and thermal stability of ZnO-based conducting thin films.