• 한국화재소방학회논문지
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• 제34권3호
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• pp.43-48
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• 2020

본 연구에서는 누전경보 기능이 내장된 누전경보차단기(JER-E2S, ETECKOREA Co., Korea)를 개발하고, 그 특성을 분석하였다. 개발된 누전경보차단기는 단상 220 V 전용으로 정격전류는 32 A, 20 A, 20 A(화장실용), 16 A 등이다. JER-E2S는 기존 누전차단기(ELB)의 특성을 모두 만족하고 있으며, 13 ± 2 mA의 저항성누설전류(Igr)인 화재전류가 전선로에 흐르면 실시간 검출하여 LED 램프로 위험 상태를 점멸할 수 있는 제품이다. 개발된 누전경보차단기는 LED 램프 및 통신기기 등에서 필연적으로 발생되는 용량성누설전류(Igc)에 대한 내성이 있어서 안정적인 전기 공급이 가능하다. 또한, 누전경보차단기는 순간지락 정전보호 기능이 있어서 작은 물방울 및 나뭇잎 등의 순간지락에 따른 차단기의 오동작 없이 전원 공급이 가능하다. 그리고 개발된 누전경보차단기의 대기전력은 0.1 W 이하로 기존 ELB에 비해 절전 성능이 3~8배 우수한 특성을 나타냈으며, 일반 120 ㎡의 아파트 1 세대에 10개 정도의 누전경보차단기가 설치되었을 때 1 개월에 2~5 kWh의 전기를 절감할 수 있다. 개발된 누전경보차단기는 기존 누전차단기의 특성을 만족할 뿐만 아니라 전기화재 예방기능 및 오동작 방지기능이 있어서 전원 품질이 우수하고, 전기화재 예방에 혁신적으로 기여할 수 있는 제품이다.

• 산업기술연구
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• 제19권
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• pp.101-105
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• 1999

Ultra thin $Ta_2O_5$ gate dielectrics were prepared by RTMOCVD (rapid thermal metal organic chemical vapor deposition) using Ta source $TaC_{12}H_{30}O_5N$ and $O_2$ gaseous mixtures. As a result, $Ta_2O_5$ thin films showed significantly low leakage current compared to $SiO_2$ of identical thickness, which was due to the stabilization of the interfacial layer by NO ($SiO_xN_y$) passivation layer. The conduction of leakage current in $Ta_2O_5$ thin films was described by the hopping mechanism of Poole-Frenkel (PF) type.

• 마이크로전자및패키징학회지
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• 제13권1호통권38호
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• pp.17-22
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• 2006

2단계 스퍼터링으로 강유전 PZT 박막을 형성시켜 유전특성과 전도기구를 조사하였다. 또한 PZT 박막 내의 carrier를 보상해주기위해 도너 불순물을 도핑하였다. 2단계 스퍼터링으로 상온층 두에를 조절하여 누설전류를 $10^{-7}A/cm^2$ order까지 줄일 수 있었다. 전도기구가 bulk-limited의 하나임을 확인하였고 따라서 적정한 도너 불순물을 채택하였다. 도너 불순물을 도핑한 경우 2단계 스퍼터링한 PZT 박막의 누설전류 특성은 $10^{-8}A/cm^2$ order까지 개선되었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제37회 하계학술대회 초록집
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• pp.230-230
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• 2009

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.190-193
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• 2001

ZnO varistors have been widely used to protect power system and electronic system against overvoltages based on their excellent nonlinearity. In order to increase their protection capability, the fracture and protection technologies of arresters have to study according to their applications, namely ImA DC voltage, leakage currents, impulse residual voltages, withstanding capability to impulse surge, and energy absorption capability. ZnO varistors which have nonlinear current-voltage characteristic name a number of failure mechanism when ZnO elements absorb surge energies. Failure mode by thermal stress and Pin hole are among the most common failure mechanism at the high current surge current. In this study, the fracture mechaism of power arresters are introduced and protection technologies are researched. In particular the effect of thermal stress by surge currents to ZnO elements and methods against arc surge energy through withstand structure design of arrester are discussed.

• JSTS:Journal of Semiconductor Technology and Science
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• 제1권1호
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• pp.15-19
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• 2001

Current leakage is the major failure mode of semiconductor device characteristic failures. Conventionally, failures such as short circuit breaks and gate breakdowns have been analyzed and the detected causes have been reflected in the fabrication process. By using a wafer-level emission-leakage failure analysis method (in-line QC), we analyzed leakage mode failure, which is the major failure detected during the probe inspection process for LSIs, typically DRAMs and CMOS logic LSIs. We have thus developed a new technique that copes with the critical structural failures and random failures that directly affect probe yields.

• 한국전기전자재료학회논문지
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• 제13권9호
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• pp.745-750
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• 2000

The (S $r_{0.85}$C $a_{0.15}$) Ti $O_3$(SCT) thin films are deposited on Pt-coated electrode (Pt/TiN/ $SiO_2$/Si) using RF sputtering method at various deposition temperature. The crystallinity of SCT thin films were increased with increase of deposition temperature in the temperature range of 200~500[$^{\circ}C$]. Also, the composition of SCT thin films were closed to stoichiometry (1.080~1.111 in A/B ratio). V-I characteristics of SCT thin films show the increasing leakage current with the increases of deposition temperature. The conduction mechanism of the SCT thin films observed in the temperature range of 25~100[$^{\circ}C$] can be divided into four regions with different mechanism by the increasing current. The region I below 0.8[MV/cm]shows the ohmic conduction. The region II between 0.9~2[MV/cm] is in proportion to J∝ $E^{1.5}$ , the region III between 2~4[MV/cm] can be explained by the Child’s law, and the region IV above 4[MV/cm]is dominated by the tunneling effect.ect.

• 한국진공학회지
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• 제9권3호
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• pp.242-248
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• 2000

고주파 스퍼터링 방법으로 증착조건을 변화시키면서 BST 박막을 제작하였다. 증착온도가 높을수록, Ar/O$_2$비가 적을수록 우수한 전기적 특성을 보였다. 누설전류 전도기구를 분석하기 위해 Schottky모델과 modified-Schottky모델을 도입하였다. BST 박막의 누설전류 전도기구는 기존의 Schottky모델이 아니라 modified-Schottky 모델을 따른다는 것을 알았다. Modified-Schottky 모델을 사용하여 광학유전상수 $\varepsilon$=4.9, 이동도 $\mu$=0.019 $\textrm{cm}^2$/V-s, 그리고 장벽높이 $\phi_b$ =0.79 eV를 구하였다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권5호
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• pp.319-325
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• 1999

Direct current(d.c.)leakage current voltage characteristics of radio-frequencymagnetron sputtered BaTa\sub 2\O\sub 6\ film capacitors with aluminum(A1) top and indium tin oxide (ITO) bottom electrodes have been investigatedas a function of applied field and temperature. In order to study surfacetreatment effect on the electrical characteristics of as-deposited film weperformed exposure of oxygen plasma on $BaTa_2O_6$ surface. d. c.current-voltage (I-V), bipolar pulse charge-voltage (Q-V), d. c. current-time (I-t) andcapacitance-frequency (C-f) analysis were performed on films. All ofthe films exhibita low leakage current, a high breakdown field strength (3MV/cm-4.5MV/cm), and high dielectric constant (20-30). From the temperature dependence of leakage current,we can conclude that the dominant conduction mechanism is ascribed toSchottky emission at high electric field (>1MV/cm) and hopping conduction at lowelectric field (<1MV/cm). According to our results, the oxide plasma surfacetreatmenton as-deposited $BaTa_2O_6$ resulted in lowering interfacebarrier height and thus, leakage current when a negative voltage applied to the A1 electrode. This can be explained by reduction of surface contamination via etching surface and filling defects such as oxygen vacancies.

• Transactions on Electrical and Electronic Materials
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• 제1권4호
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• pp.30-39
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• 2000

The variation of electrical properties of (Ba, Sr)TiO$_3$[BST] thin films deposited of RuO$_2$electrode with (Ba+Sr)/Tr ration was investigated. BST thin films with various (Ba+Sr)/Tr ration were deposited on RuO$_2$/Si substrates using in-situ RF magnetron sputtering. It was found that the electrical properties of BST films depends on the composition in the film. The dielectric constant of the BST films is about 190 at the (Ba+Sr)/Tr ration of 1.0, 1,025 and does not change markedly. But , the dielectric constant degraded to 145 as the (Ba+Sr)/Tr ratio increase to 1.0. In particular, the leakage current mechanism of the films shows the strong dependence on the (Ba+Sr)/Tr ration in the films. At the ration (Ba+Sr)/Tr=1,025, the Al/BST/RuO$_2$ capacitor show the most asymmetric behavior in the leakage current density, vs, electric field plot. It is considered that the leakage current of the (Ba+Sr)/Tr=1,025 thin films is controlled by the battier-Iimited process, i,e, Schottky emission.