• The Transactions of the Korean Institute of Power Electronics
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• v.8 no.6
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• pp.504-511
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• 2003

In this paper, inverter type neon power supply using a piezoelectric transformer is fabricated and its characteristic is investigated. Developed neon power supply is composed of basic circuit and blocks, such as rectifier part, frequency oscillation part and piezoelectric transformer and resonant half bridge inverters. In this paper for complement the low power limitation, piezoelectric transformer at parallel connected driving by inverter is studied for noon tubes system of high power. When piezoelectric transformer is connected with parallel, LC filter connection method with parallel and selection of inductance L and capacitor C of primary side is suggested for reduce unbalanced current at the terminal of each transformer. Piezoelectric transformers use piezoelectric ceramic devices. Thus it is wireless therefore it has high power density, high Isolation level, low loss, more light, and miniaturization. In addition, high voltage transfer ratio is expected because there is no leakage inductance. Also, it has economic merit that the electrical loss Is low because structure is simple, small and tighter weight.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.485-486
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• 2005

Fringe-field switching mode which has a horizontal and vertical electric field exhibits high transmittance and wide viewing angle characteristics. In the FFS mode, a passivation layer between common and pixel electrodes exists, which functions as preventing current leakage of fringe-field. In this paper, we have studied LC behavior, transmittance and operating voltage characteristics with applied voltage as a function of the passivation layer thickness and defined optimal value of the layer to be about $0.5{\mu}m$.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.10
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• pp.59-66
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• 1993

PZT thin film deposited by rf magnetron sputtering was annealed by rapid thermal process(RTP) in PbO ambient to prevent vaporing of Pb and interface reactions. Si and TiN/Ti/Si substrates were prepared to survey application of TiN/Ti layer which can prevent interface interaction with Si and crack of PZT thin films. As temperature increased. PZT thin films surface on Si substrate appeared more severe cracks which should affect electrical properties deadly. TiN/Ti(40-150${\mu}{\Omega}{\cdot}cm$) layer applied for buffer layer suppressed interface interaction and film cracking. The measured leakage current(LC) and breakdown voltage(BV) of PZT thin film on TiN/Ti/Si substrate annealed at 650$^{\circ}$C for 15 sec (thickness of 2500$\AA$) were 38 nA/cm2 and 3.5 MV/cm and dielectric constant was 310 at 1 MHz, and remanent polarization (Pr) and coercive field (Ec) were 6.4${\mu}C/cm^{2}$ and 0.2MV/cm at 60 Hz, respectively.

• Journal of electromagnetic engineering and science
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• v.15 no.4
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• pp.219-223
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• 2015

In this paper, a miniaturized radio frequency choke (RFC) using modified stubs is proposed to improve isolation characteristics in a multiple-input-multiple-output (MIMO) antenna system. The proposed RFC, based on the LC resonance, is designed to suppress the leakage current that leads to the degradation of antenna diversity performances in the MIMO antenna configuration. The proposed RFC is composed of two open stubs that are implemented on the top of the ground plane and miniaturized by adding a slit structure on the ground plane. The MIMO antennas are also designed to verify isolation performance in the LTE 2300 band (2,300-2,400 MHz). The MIMO antennas perform well with low reflection coefficient characteristics and high isolation characteristics in the whole LTE 2300 band. To evaluate the isolation in the MIMO system, the envelope correlation coefficient (ECC) is calculated, and the value is less than 0.08. The achieved ECC is regarded as a reasonable result for improving isolation performance in the frequency range of 2,300-2,400 MHz; also, radiation patterns of antenna elements are maintained regardless of the presence of RFC.

• Macromolecular Research
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• v.17 no.12
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• pp.963-968
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• 2009

Liquid crystal (LC; E7 and/or ML-0249)-embedded, poly(vinylidenefluoride-co-hexafluoropropylene) (PVdF-co-HFP)-based, polymer electrolytes were prepared for use in dye-sensitized solar cells (DSSCs). The electrolytes contained 1-methyl-3-propylimidazolium iodide (PMII), tetrabutylammonium iodide (TBAI), and iodine ($I_2$), which participate in the $I_3^-/I^-$ redox couple. The incorporation of photochemically stable PVdF-co-HFP in the DSSCs created a stable polymer electrolyte that resisted leakage and volatilization. DSSCs, with liquid crystal(LC)-embedded PVdF-co-HFP-based polymer electrolytes between the amphiphilic ruthenium dye N719 absorbed to the nanocrystalline $TiO_2$ photoanode and the Pt counter electrode, were fabricated. These DSSCs displayed enhanced redox couple reduction and reduced charge recombination in comparison to that fabricated from the conventional PVdF-co-HFP-based polymer electrolyte. The behavior of the polymer electrolyte was improved by the addition of optimized amounts of plasticizers, such as ethylene carbonate (EC) and propylene carbonate (PC). The significantly increased short-circuit current density ($J_{sc}$, $14.60\;mA/cm^2$) and open-circuit voltage ($V_{oc}$, 0.68 V) of these DSSCs led to a high power conversion efficiency (PCE) of 6.42% and a fill factor of 0.65 under a standard light intensity of $100\;mW/cm^2$ irradiation of AM 1.5 sunlight. A DSSC fabricated by using E7-embedded PVdF-co-HFP-based polymer electrolyte exhibited a maximum incident photon-to-current conversion efficiency (IPCE) of 50%.

• Journal of the Korean Vacuum Society
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• v.18 no.2
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• pp.141-146
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• 2009

PLZT ferroelectric thin films were deposited on Pt/Ti/$SiO_2$/Si substrate with $TiO_2$ buffer layer in between by rf magnetron sputtering method. In order to investigate the effect of Ar/$O_2$ partial pressure ratio on the ferroelectric properties of PLZT thin films, PLZT thin films were deposited at various Ar/$O_2$ partial pressure ratio ; 27/1.5 seem, 23/5.5 seem, 21/7.5 seem and 19/9.5 seem. The crystallinities of PLZT thin films were analyzed by XRD. The surface morphology was observed using FE-SEM. The P-E hysteresis loops, the remanent polarization characteristics and the leakage current characteristics were obtained using a Precision LC. The crystallinity and elaborateness of PLZT thin films were decreased as increasing the oxygen partial pressure ratio. And preferred orientation of PLZT thin films changed from (110) plane to (111) plane. The oxygen partial pressure ratio affects the thin film surface morphology and the ferroelectric properties.